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    • 4. 发明专利
    • MEASURING METHOD OF DIFFUSION CHARACTERISTIC OF FACE
    • JPH07208961A
    • 1995-08-11
    • JP629994
    • 1994-01-25
    • NIPPON KOKAN KK
    • NOMURA SHUICHIROMIYAZAKI TAKAO
    • G01B11/30G01N21/47
    • PURPOSE:To find the light diffusion characteristic of a face to be measured, which has been averaged over a definite area in all directions. CONSTITUTION:A ring-shaped light source 3 is arranged in parallel with a face 1 to be measured, a photodetector 2 at a field angle theta is arranged coaxially with the light source 3 so as to be directed to the face 1 to be measured, and the diffusion characteristic of the face 1 to be measured is measured on the basis of the ratio of the radius of the light source 3 to the height from the face 1 to be measured of the light source 3 or to the height from the face 1 to be measured of the phtodetector 2 or on the basis of a light-receiving intensity measured by changing the visual field angle theta. In addition, when the measuring method is used to continuously measure a change in the roughness of a face, a prescribed angle constant alpha is used, and the light-receiving intensity is found on the basis of the radius of the light source 3, the height from the face 1 to be measured of the light source 3, the height from the face 1 to be measured of the photodetector 2 and a magnitude relationship between the value of an expression decided by the theta and the alpha.
    • 7. 发明专利
    • FILM THICKNESS MEASURING INSTRUMENT
    • JPS6336105A
    • 1988-02-16
    • JP17914586
    • 1986-07-30
    • NIPPON KOKAN KK
    • SANO KAZUOMIYAZAKI TAKAOYAMADA YOSHIRO
    • G01B11/06
    • PURPOSE:To measure accurate film thickness even when the refractive index and property of a base material change by calculating the thickness of a thin film from the phase angle cosine relation among reflected light beams from thin films classified by wavelengths and the base material. CONSTITUTION:Light beams emitted by homogeneous light sources 20 and 21 which differ in wavelength are passed through a half-mirror body 22 and a polarizer 23 alternately through shutters 26 and 27 to illuminate the surface of a sample 24 which has thin films on the base at an angle phi0. Light beams reflected by the thin films and base of the sample 24, on the other hand, are branched into three light beams by optical flats 29a-29c, transmitted through respective analyzers 31a-31c which have fixed transmission azimuth angles, and sent to respective photoelectric converters (not shown in figure). The outputs of the respective photoelectric converters are inputted by the wavelengths, the phase angle cosines of the respective reflected light beams from the thin films and base are found by the wavelengths from the inputted output signals, and the thicknesses of the films are calculated from the relation among the phase angle cosines.
    • 8. 发明专利
    • MEASURING METHOD OF GAS FLOW RATE
    • JPS60260859A
    • 1985-12-24
    • JP11662184
    • 1984-06-08
    • NIPPON KOKAN KK
    • MAKABE HIDEKAZUMIYAZAKI TAKAO
    • G01P5/12G01F1/68G01F1/69G01F1/696
    • PURPOSE:To decrease the transmission quantity of radiation heat and to measure exactly the flow rate of gas by controlling the quantity of electricity to be applied to each heating element in such a manner that the temp. of an outside radiation shielding body is made equal to the temp. of an inside heating element probe. CONSTITUTION:A heater 11 and the 1st temp. measuring sensor 12 are contained in the heating element probe 1. The outside radiation shielding body 2 is so installed as to provide the double construction to enclose partially the probe 1. The heater 21 and the 2nd temp. measuring sensor 22 are contained therein. The electric energy to be applied to each heating element is so controlled by using a controller 3 that the temp. T2 of the body 2 is made equal to the temp. T1 of the probe 1. The transmission quantity of radiation heat is decreased by the above-mentioned method. The exact measurement of the flow rate of the gas to be measured is made possible even if the temp. of said gas is as high as >=400 deg.C.