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1. 发明专利

JPH06236741A FLUORESCENT CHARACTER DISPLAY DEVICE 失效
公开(公告)号：JPH06236741A
公开(公告)日：1994-08-23
申请号：JP29989892
申请日：1992-11-10
申请人： NIPPON DENSO CO , NORITAKE CO LTD , KYUSHU NORITAKE KK
发明人： NUMAZAKI KOJI , FUJII TETSUO , KOBAYASHI MASAAKI , KANI YASUYUKI , MATSUMOTO SHUNICHI , ENDO NOBORU , MORI JUN
IPC分类号： H01J29/96 , H01J31/15
摘要： PURPOSE:To integrate also a quartz oscillator into the envelop of a fluorescent display display device. CONSTITUTION:A phosphor display part 26 is formed on a glass base 22 constituting the lower surface of an envelop 21 through an anode 25, and a circuit element mounting part 28 is also formed. An IC chip 29 is mounted on the circuit element mounting part 28, and a bare quartz oscillator 30 is directly mounted thereon. These IC chip 29 and quartz oscillator 30 are covered with a shield cover 40 to protect them from the thermions emitted from a filament 39. The periodic pulse signal generated in the quartz oscillator 30 is inputted to the IC chip 29, and used as the clock signal for conducting time display, or as the clock signal for synchronizing the operation of a CUP formed on the IC chip 29. When the phosphor display part 26 is dynamically driven, a one obtained by dividing the clock signal is used as the timing pulse of switching of a lighting segment.

2. 发明专利

JPH06162970A FLUORESCENT CHARACTER DISPLAY DEVICE 失效
公开(公告)号：JPH06162970A
公开(公告)日：1994-06-10
申请号：JP30677192
申请日：1992-11-17
申请人： NORITAKE CO LTD , KYUSHU NORITAKE KK , NIPPON DENSO CO
发明人： KOBAYASHI MASAAKI , KANI YASUYUKI , ENDO NOBORU , MORI JUN , MATSUMOTO SHUNICHI , FUJII TETSUO , TAKEI HIROSHI , NUMAZAKI KOJI
IPC分类号： H01J29/96 , H01J31/15
摘要： PURPOSE:To provide an inexpensive fluorescent character display device free from the occurrence of a crack on a semiconductor chip mounted on a glass substrate, or the glass substrate itself. CONSTITUTION:Regarding a fluorescent character display device having a structure where a display section and a semiconductor chip 6 for driving the display section are mounted on the same glass substrate 1 in an identical vacuum envelope, the first and second thin metal sheets 14a and 14b are laid between the chip 6 and the substrate 1. Both of the sheets 14a and 14b are formed out of a material having a thermal expansion coefficient nearly equal to the thermal expansion coefficients of the chip 6 and substrate 1. The chip 6 is bonded to the sheet 14a using an inorganic adhesive 13a, and the other sheet 14b is pasted to the sheet 14a at the opposite side of the bonded chip 6. The assembled body of the first and second thin meal sheets 14a and 14b is fastened to the upper surface of the glass substrate 1 by bonding the sheet 14b thereto using another inorganic adhesive 13b.

3. 发明专利

JPH0574949B2 失效
公开(公告)号：JPH0574949B2
公开(公告)日：1993-10-19
申请号：JP21575885
申请日：1985-09-28
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792

4. 发明专利

JPH0571147B2 失效
公开(公告)号：JPH0571147B2
公开(公告)日：1993-10-06
申请号：JP23970085
申请日：1985-10-25
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI , IWASAKI YUTAKA
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792

5. 发明专利

JPH04332175A SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH04332175A
公开(公告)日：1992-11-19
申请号：JP13197691
申请日：1991-05-07
申请人： NIPPON DENSO CO
发明人： GOTO YOSHITAKA , FUJII TETSUO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PURPOSE:To provide a semiconductor pressure sensor stabilizing mechanical properties and having output characteristics satisfactory in reproducibility by thinning a gauge layer, which is formed on a diaphragm to constitute a strain gauge bridge, as much as possible for bringing the structure of said diaphragm close to an insulating single-layer film. CONSTITUTION:A strain gauge bridge is constituted on the diaphragm 21 of a semiconductor pressure sensor 10 by a gauge polysilicon layer 23. Also, a substrate polysilicon layer 22 is formed between the gauge polysilicon layer 23 of a contact part 28 and the diaphragm 21. Thus, the thickness of the contact part 28 composed of the thin gauge polysilicon layer 23 and the substrate polysilicon layer 22 can be ensured sufficiently. Therefore, the punch-through of the contact part 28 is prevented at the time of etching of a silicon nitride layer 26 being a protective coat on the gauge polysilicon layer 23 and an electrode 29 and the gauge polysilicon layer 23 are surely connected electrically.

6. 发明专利

JPH04154147A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04154147A
公开(公告)日：1992-05-27
申请号：JP28050790
申请日：1990-10-17
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO
IPC分类号： H01L21/762 , H01L21/76 , H01L21/763 , H01L21/8249 , H01L27/06 , H01L29/786
摘要： PURPOSE:To enable thermal expansion of an insulation film to be relaxed and electrical characteristics of a semiconductor element to be stabilized by providing a thermal expansion relaxation film between an electrical shield layer surrounding the insulation film and the insulation film which is formed at a lower layer of a region where a semiconductor element is formed which is surrounded by the insulation film. CONSTITUTION:An SiO2 film 7 is formed on an Si substrate 6 and a poly-Si film 5 is formed on it. A poly-Si layer 10 is formed in a specified part of the film 5 and an Si3N4 film 4 as a thermal expansion relaxation film is formed in other parts. An SiO2 film 3 is formed on the film 4 and an N epitaxial layer 2 as an element-forming layer and an N type Si substrate 1 are deposited on it in sequence. A bipolar transistor 14 is formed in each 501 region. Since the film 5 and the layer 10 cover a side surface part and a lower surface part of each SOI region. potential can be given to the layer 10 through an Al$ electrode 13, and thus the film 5 and the layer 10 are enabled to function as an electrical shield layer.

7. 发明专利

JPH03215970A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03215970A
公开(公告)日：1991-09-20
申请号：JP1158490
申请日：1990-01-19
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO
IPC分类号： H01L29/73 , H01L21/02 , H01L21/331 , H01L21/76 , H01L21/762 , H01L21/8249 , H01L27/06 , H01L27/12 , H01L29/732
摘要： PURPOSE:To enable various elements to be accurately integrated in various thicknesses by a method wherein semiconductor elements correspondent to the thickness of a first and a second semiconductor element are provided onto the first and the second semiconductor layers isolated from each other by an insulating film and different in thickness, the surfaces of the first and the second semiconductor layer are made smooth, and they are arranged on the same plane. CONSTITUTION:First semiconductor layers 12 and 14 which serve as a P channel MOS transistor forming region and an NPN bipolar transistor forming region respectively and a second semiconductor layer 13 which serves as an N channel MOS transistor forming region are insulated and isolated from each other silicon oxide films 3 and 9 on a silicon substrate 11, and the surfaces of the layers 12, 13, and 14 are made smooth and level with each other to constitute the same plane. As mentioned above, semiconductor elements correspondent to the thicknesses t1 and t2 of the semiconductor layers 12-14 are formed on the semiconductor layers 12-14 different from each other in thickness and isolated and isolated from each other through the silicon oxide films 3 and 9. By this setup, various elements can accurately be integrated in various thicknesses.

8. 发明专利

JPH03101275A LIGHT AMPLIFYING INTEGRATED CIRCUIT 失效
公开(公告)号：JPH03101275A
公开(公告)日：1991-04-26
申请号：JP23882989
申请日：1989-09-14
申请人： NIPPON DENSO CO
发明人： GOTO YOSHITAKA , FUJII TETSUO
IPC分类号： H01L31/14
摘要： PURPOSE:To enhance conversion efficiency and enable production to be performed easily by forming a light-emitting element and a photodetector on a semiconductor substrate and by forming a semiconductor by direct junction. CONSTITUTION:An insulating film 2 is formed on a silicon substrate 1, the insulating film 2 and a semiconductor substrate 3 are joined by direct junction, an insulating film 36 is further formed on the semiconductor substrate 3, the insulation film 36 and a semiconductor substrate 4 are directly joined by direct junction, a photodetector element is formed on the semiconductor substrate 3, a light-emitting element is formed on the semiconductor substrate 4, or inversely a light-emitting element is formed on the semiconductor substrate 3, a photodetector is formed on the semiconductor substrate 4, and a transistor 6 which amplifies electrical signal converted by the photodetector and a transistor 6 which drives the light-emitting element are formed on the silicon substrate 1, the semiconductor substrate 3, or the semiconductor substrate 4. Thus, use of the semiconductor substrate achieves an improved crystallinity of semiconductor and enhances light/electron conversion efficiency of light-emitting element or photodetector which are formed on that semiconductor.

9. 发明专利

JPH0328833B2 失效
公开(公告)号：JPH0328833B2
公开(公告)日：1991-04-22
申请号：JP16907081
申请日：1981-10-22
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO
IPC分类号： G11C17/00 , G11C17/08 , H01L21/82 , H01L21/8246 , H01L27/112 , H01L29/78

10. 发明专利

JPH0349267A SEMICONDUCTOR TYPE ACCELERATION SENSOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH0349267A
公开(公告)日：1991-03-04
申请号：JP18433189
申请日：1989-07-17
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , AZEYANAGI SUSUMU , GOTO YOSHITAKA
IPC分类号： G01P15/12 , G01P15/02 , G01P15/08 , H01L29/84
摘要： PURPOSE:To stop displacement of a beam section securely when an excessive acceleration is applied by arranging a stopper pratically on a movement line of a center of gravity to allow the stopper to stop displacement acting on movement of the center of gravity of a beam weight section. CONSTITUTION:An accelerating sector has a cantilever shape and a beam weight section 2 performs displacement upward or downward the figure when acceleration is applied thereto. However, a piezo resistance element 6 which is formed at a base of a beam thin section receives a stress correspponding to the displacement and a resistance value varies due to the stress. That is, acceleration which the beam weight section 2 has received can be detected by variation of resistance values of the piezo resistance element 6. An upper stopper 1 and a lower stopper 4 are arranged on an extension line of displacement of a center-of- gravity C of the beam weight section 2. When an excessive acceleration is applied, the beam weight section 2 can stops displacement caused by the acceleration at an area near the enter of gravity. Accordingly, it is possible to prevent development of rupture at the thin section of the beam.

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