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1. 发明专利

JPH07325880A WATTHOUR METER CHARACTER RECOGNITION DEVICE 失效
公开(公告)号：JPH07325880A
公开(公告)日：1995-12-12
申请号：JP22495394
申请日：1994-09-20
申请人： NIPPON DENKI KEIKI KENTEISHO , TOSHIBA CORP
发明人： ABE TAKAYUKI , TAKAHASHI MASAKI , SETOMOTO TATSUMI , SEKIGUCHI SHINGO
IPC分类号： G01R11/00 , G06K9/00 , G06K9/46 , G06T1/00
摘要： PURPOSE:To improve the recognition rate of lacking rotation characters of a watthour meter and to accurately recognize division characters by providing a character segmentation means, a reference measure segmentation means, a measurement recognition means and a judgement means. CONSTITUTION:In a measure and character segmentation part 6, the position address, height and width of the character are detected and also the position address and height of a reference measure are detected. Character information is supplied to a character recognition part 7, a prescribed dictionary is referred to and the character is recognized. The recognized result of the character, the degree of similarity, a segmentation information address and a reference measure information address are supplied through a result output part 8 to the result input part 9 of a personal computer 4. The supplied information is supplied to a measure value calculation part 10 further and a minimum measure value is calculated in the part 10. Then, the character is judged in a similarity degree calculation part 11 and a high-order digit is judged in a high-order digit judgement part 12 further. Thus, even when a part of the character of a recognition object lacks, by recognizing the next object character, the character is accurately recognized.

2. 发明专利

JP2006337857A Method for manufacturing semiconductor device, and correction program of chip pattern in semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件中芯片图案的校正程序
公开(公告)号：JP2006337857A
公开(公告)日：2006-12-14
申请号：JP2005164541
申请日：2005-06-03
申请人： Nuflare Technology Inc , Toshiba Corp , Toshiba Microelectronics Corp , 東芝マイクロエレクトロニクス株式会社 , 株式会社ニューフレアテクノロジー , 株式会社東芝
发明人： HONDA NORIYUKI , TSUNAKAWA KIYOSHI , WATANABE SUSUMU , YASHIMA JUN , ABE TAKAYUKI , SUZUKI JUNICHI
IPC分类号： G03F1/68 , G03F1/70 , G06F17/50 , H01L21/027 , H01L21/3205 , H01L21/768 , H01L21/82 , H01L23/52 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which appropriate correction or transformation can be performed for a divided chip pattern. SOLUTION: The method includes steps of: determining a plurality of computation areas A11, A12 adjacent to each other in a region where chip patterns P29, P30 of a semiconductor device are present on a design plane; forming a computation margin area 59 for each computation area A11 outside and adjacent to the computation area so as to expand the computation area A11 to the computation margin area 59; selecting chip patterns P29, P30 disposed even in a portion in the computation area A11 by each computation area A11, A12; correcting the chip patterns P29, P30 selected in the respective computation areas A11, A12; and fabricating a real pattern on a wafer based on the corrected chip patterns P29b, P30b. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以对分割的芯片图案进行适当的校正或变换的半导体器件的制造方法。解决方案：该方法包括以下步骤：在设计平面上存在半导体器件的芯片图案P29，P30的区域中，确定彼此相邻的多个运算区域A11，A12; 形成计算区域A11的计算边界区域59，将计算区域A11扩展到运算区域59; 选择由计算区域A11，A12设置在计算区域A11的一部分中的芯片图案P29，P30; 校正在各个计算区域A11，A12中选择的芯片图案P29，P30; 以及基于校正的芯片图案P29b，P30b在晶片上制造实际图案。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2000077296A Electron beam writing method 有权
标题翻译：电子束写法
公开(公告)号：JP2000077296A
公开(公告)日：2000-03-14
申请号：JP24336698
申请日：1998-08-28
申请人： Toshiba Corp , Toshiba Mach Co Ltd , 東芝機械株式会社 , 株式会社東芝
发明人： OGASAWARA MUNEHIRO , KAMIKUBO TAKASHI , SHIMIZU MITSUKO , OKI SUSUMU , YASUSE HIROTO , HIGURE HITOSHI , ABE TAKAYUKI , TAKAMATSU JUN , SUNAOSHI HITOSHI , SHIMOMURA NAOHARU , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , SAITO TAKASHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a highly accurate pattern. SOLUTION: This method comprises a step of obtaining an irradiation quantity density distribution ρ (X,Y) per unit irradiation quantity, due to the long distance photosensitive action at a point in a wiring region of a sample, when an electron beam of a unit radiation quantity is irradiated on a point Y in the writing region, a step of dividing the writing region of the sample coated with a resist to which a pattern is written into n (>=2) small regions i (1
摘要翻译：要解决的问题：获得高精度图案。解决方案：该方法包括在单位电子束中由于在样品的布线区域中的点处的长距离感光作用而获得每单位照射量的照射量密度分布ρ（X，Y）的步骤辐射量照射在写入区域中的点Y上，将涂布有图案的抗蚀剂的样品的写入区域划分成n（> = 2）小区域i（1 <= i < n），基于要写入的图案获得每个小区域i上的照射量Di的步骤，基于照射量由于长距离光敏作用而获得每个小区域i上的照射量密度Fi的步骤密度分布ρ（X，Y）和照射量Di，在各个区域获得基于每个照射量密度Fi的长距离感光作用的影响的对应区域的照射量密度Ci的步骤小区域i以及用电子束照射的相应的小区域以提供被照射的照射量密度Ci的步骤。对于每个小区域我

4. 发明专利

JPH11238671A ELECTRON BEAM LITHOGRAPHY EQUIPMENT 失效
公开(公告)号：JPH11238671A
公开(公告)日：1999-08-31
申请号：JP3897798
申请日：1998-02-20
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD
发明人： KAMIKUBO TAKASHI , ABE TAKAYUKI , YASUSE HIROTO , FUKUTOME YUJI , SHIMIZU MITSUKO , OKI SUSUMU , HATTORI YOSHIAKI , IIJIMA TOMOHIRO
IPC分类号： G03F7/20 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To control the electron beam dose and time of electron beam lithography equipment in fine control units by constituting the delay circuit section of a blanking control circuit of a plurality of delay circuits, having equal minimum delay time pitches with respect to control data and different delay time with respect to the same control data. SOLUTION: A blanking control circuit which controls a blanking deflector is constituted of two delay circuits 51 and 52, having the equal minimum delay time pitch against inputted electron beam dose data and choosable delay time which are shifted from each other by half a phase. A selection circuit 50 with table sends the electron beam dose data to each delay circuits 51 and 52 as delay time data based on its table and selects closet values for obtaining target electron beam doses. As a result, the blanking time and electron beam dose of electron beam lithography equipment can be changed at 1/2 the unit control time.

5. 发明专利

JPH1131658A METHOD AND DEVICE FOR CORRECTING PROXIMITY EFFECT 失效
公开(公告)号：JPH1131658A
公开(公告)日：1999-02-02
申请号：JP34935697
申请日：1997-12-18
申请人： TOSHIBA CORP
发明人： SHIMIZU MITSUKO , ABE TAKAYUKI , HATTORI YOSHIAKI , IIJIMA TOMOHIRO , OKI SUSUMU , KAMIKUBO TAKASHI , YASUSE HIROTO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To calculate the effects of the rear scattering in a short time by calculating in advance a contribution exerted on a correction calculation by a typical pattern and blocking it by the area of the pattern and preparing a table for each block, in which the amount of effect is described at each position of the contour of the pattern and correcting the amount of irradiation at each position with reference to the table. SOLUTION: The amount of rear scattering exerted on each amount of irradiation by a typical pattern per a given area is calculated and is arranged according to the area of the typical pattern for making a table. When a typical pattern A is taken, if a table value is taken out based on the area and is applied to the mesh of the amount of irradiation with the center of the typical pattern A shaped like a mesh aligned with the center of the coordinates of the table value, the values Ua1 -Ua9 for the amounts of back scattering per a given area exerted on each mesh of the amount of irradiation by a typical pattern A are arranged. Similarly, the amounts of back scattering of the typical patterns A, B are arranged by taking out and summing the effects Ub1 -Ub7 of areas of the typical pattern B. The amounts of correction of irradiation per each irradiation mesh are calculated from the obtained amounts of back scattering to write the pattern.

6. 发明专利

JPH1117025A THREE TRANSISTOR TYPE DYNAMIC RAM MEMORY CELL 失效
公开(公告)号：JPH1117025A
公开(公告)日：1999-01-22
申请号：JP16889597
申请日：1997-06-25
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： KIMURA MASAHIRO , TANAKA YUTAKA , ABE TAKAYUKI , OGAWA KYOSUKE , KOBAYASHI TOSHIHIRO
IPC分类号： H01L27/108 , H01L21/8242
摘要： PROBLEM TO BE SOLVED: To reduce the area of memory cells by regulating a cell pattern in such a manner that a channel length of a MOS transistor for storing charges and driving read data lines is made smaller than the width across which a gate overlaps a transistor region. SOLUTION: A gate polysilicon 3 is arranged on a transistor region 1 through an insulating film such as an oxide film, the region 1 being formed on a silicon substrate. Then, the shape of the polysilicon 3 is regulated in such a manner that a gate region that is an overlap 9 between the polysilicon 3 and the region 1 is formed of a dimensionally narrow portion A and a wide portion excluding the narrow portion from the gate region 9. When a predetermined high voltage is applied to the thus regulated polysilicon 3, a channel is formed, and electrons are caused to flow from a source region 5 to a drain region 7 via such channel to establish continuity.

7. 发明专利

JPH10321494A CHARGED PARTICLE BEAM LITHOGRAPHIC METHOD 失效
公开(公告)号：JPH10321494A
公开(公告)日：1998-12-04
申请号：JP12416397
申请日：1997-05-14
申请人： TOSHIBA MACHINE CO LTD , TOSHIBA CORP
发明人： IIJIMA TOMOHIRO , HATTORI YOSHIAKI , ABE TAKAYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain solutions with the accuracy corresponding to that when the calculation for correcting proximity effects by the expansion method is performed to higher order without increasing the calculation time and calculation resource. SOLUTION: In an electron beam lithographic method in which a pattern to be plotted is plotted with the optimum irradiating quantity by finding the optimum irradiating quantity at every position in the pattern, an approximate optimum irradiating quantity d0 of a sample is first found (S1). Then, a corrected irradiating quantity di is found by multiplying the exposure error which occurs when the sample is exposed with the irradiating quantity obtained in the preceding step, by the approximate optimum irradiating quantity d0 and a proportional constant, and this procedure is repeated (n) times (S2). Thereafter, a new n-th corrected irradiating quantity dn, is found by multiplying the final corrected irradiating quantity dn obtained in the step S2 by a correction factor which contains the approximate optimum irradiating quantity d0 and varies depending upon the location, and the optimum irradiating quantity (d) is obtained by adding the quantity d0 obtained in the step S1 and d1-dn-1 obtained in the step S2 to the n-th corrected irradiating quantity dn (S3).

8. 发明专利

JPH09312246A DETECTING NOISE IN PATTERN FORMING APPARATUS, NOISE DETECTING MARK, AND METHOD AND APPARATUS FOR FORMING PATTERN HAVING THEM 失效
公开(公告)号：JPH09312246A
公开(公告)日：1997-12-02
申请号：JP10801496
申请日：1996-04-26
申请人： TOSHIBA CORP
发明人： SAKURAI HIDEAKI , ABE TAKAYUKI , UMAGOE TOSHIYUKI , SUNAOSHI HITOSHI , MUROOKA KENICHI , OGASAWARA MUNEHIRO , NISHIMURA CHIKASUKE , FUKUTOME YUJI , NAKAYAMADA KENSHO , TOKAWA IWAO
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a high-reliability noise detecting method, a noise detecting mark, and pattern forming apparatus having them which efficiently and accurately specifies for a short time the frequency of the noise, variation of the beam size, positional deviation of the beam in the pattern forming apparatus. SOLUTION: The noise detecting process used in the noise detecting method comprises irradiating a beam at specified frequency on a noise detecting mark prepared for the apparatus, monitoring and storing signals of a reflected beam thereof, and repeating the detecting step several times at changed beam frequencies. The analysis results with a beam at frequency 0 (blanking off) and high frequency beam shown in Figs. a and b are compared to judge whether peaks are due to beat of the high frequency noise with the beam or only low frequency noise. The beat frequency is low and hence it can be caught. The latent high frequency noise can be obtained from the shift width and direction of the peak from the high frequency value.

9. 发明专利

JPH09186070A VARIABLE SHAPED BEAM ESTIMATION METHOD 失效
公开(公告)号：JPH09186070A
公开(公告)日：1997-07-15
申请号：JP98496
申请日：1996-01-08
申请人： TOSHIBA CORP
发明人： NAKAYAMADA KENSHO , SAKURAI HIDEAKI , ABE TAKAYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enable accurate estimation of practical deviation amount of gain and offset, and contribute to the improvement of dimensional precision of a drawing equipment. SOLUTION: In this method, the dimension of a variable shaped beam used for pattern exposure to photosensitive material formed on a substrate is estimated. In this case, a plurality of rectangular patterns 1 having the same dimension are prepared. As to at least one out of them, a rectangular pattern is drawn by a single shot. As to the others, a pattern is divided by a line parallel with one side of the rectangular pattern, and drawing is performed by two shots 2, 3. To the actual patterns obtained by development, the pattern dimension in the vertical direction to the division line is measured by using SEM. By investigating the relation between the measured pattern dimension and whether division exists or division position, the dimensional precision of the variable shaped beam is estimated.

10. 发明专利

JPH0863941A INFORMATION PROCESSOR 失效
公开(公告)号：JPH0863941A
公开(公告)日：1996-03-08
申请号：JP20101794
申请日：1994-08-25
申请人： TOSHIBA CORP
发明人： ABE TAKAYUKI
IPC分类号： G11B21/02 , G11B7/12 , G11B19/20 , G11B25/04 , G11B33/12
摘要： PURPOSE: To easily secure the accuracy of the relative positional dimension between both reference surfaces by making base reference surfaces to which an optical disk driving source and an optical system are fitted the same side faces thereby workings the reference surfaces in the same direction. CONSTITUTION: The positioning of a fitting part 51 is performed by fitting stoppers 55 to a base 46 to which an optical disk driving part 50 is fitted and by abutting the positioning member 52 of a spindle motor 49 on a stopper surface 55a being flushed with the reference surface of a driving part 50. Moreover, an objective lens 43 is positioned by supporting the guide rail 48 of an optical system 40 with a reference surface 54 and then the fitting part 51 of the driving part 50 and the objective lens 43 are reletively positioned by respective reference surfaces 53, 54. Thus, since reference surfaces 53, 54 are formed in same upper planes of the base 46 and the working accuracies of reference surfaces are improved, the relative positioning accuracy between the disk driving part and the optical system objective lens is easily secured.

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