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    • 1. 发明专利
    • TUNNEL TRANSISTOR AND ITS MANUFACTURE
    • JP2000174256A
    • 2000-06-23
    • JP34132198
    • 1998-12-01
    • NEC CORP
    • ZEN YOSHINBABA TOSHIO
    • H01L29/66H01L29/78
    • PROBLEM TO BE SOLVED: To provide a tunnel transistor having less gate leakage or gate capacity by eliminating a joint area between a gate layer and a source area as well as a joint area between the gate layer and a drain area. SOLUTION: In this tunnel transistor, a channel layer 2 is formed between a source area 5 and a drain area 6, and a gate layer 4 is formed on the channel layer 2 with an insulation layer 3 in between. The tunnel transistor is provided with the first conductivity type channel layer 2 formed on a substrate 1, the insulation layer 3 formed thereon, the gate layer 4 which has second conductivity type different from the first conductivity type and is made of a degenerated semiconductor and is formed on the insulation layer 3, the drain area 6 which is formed on the substrate 1 while being in contact with one side 2a of the channel layer 2 and is made of second conductivity type degenerated semiconductor, the source area 5 which is formed on the substrate 1 while being in contact with the other side 2b of the channel layer 2 and is made of second conductivity type degenerated semiconductor, and a source electrode 7, a gate electrode 8 and a drain electrode 9 which are formed respectively in the source area 5, gate layer 4 and drain area 6.