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1. 发明专利

JP2011124328A Spintronics element using carbon magnetic material 审中-公开
标题翻译：使用碳磁材料的纺丝元件
公开(公告)号：JP2011124328A
公开(公告)日：2011-06-23
申请号：JP2009279487
申请日：2009-12-09
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI , LEE HOSIK
IPC分类号： H01L29/82 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To provide a spintronics element structure contributing to weight reduction and an environmental harmonizing property by using a transition-metal-free light element in a magnetic material. SOLUTION: The spintronics element structure contains a material which is made ferromagnetic by eliminating only a magnetic moment on one end of a material made of a carbon material. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过在磁性材料中使用无过渡金属的光元件来提供减轻重量和环境协调性的自旋电子元件结构。解决方案：自旋电子元件结构包含通过仅消除由碳材料制成的材料的一端上的磁矩而制成铁磁性的材料。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009214195A Method and device for forming thin film 审中-公开
标题翻译：用于形成薄膜的方法和装置
公开(公告)号：JP2009214195A
公开(公告)日：2009-09-24
申请号：JP2008057670
申请日：2008-03-07
申请人： Nec Corp , 日本電気株式会社
发明人： KAWAI TAKASUMI , MIYAMOTO YOSHIYUKI
IPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , C01B31/04 , G01Q80/00
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a thin film, by which a crystal thin film is formed with high accuracy.
SOLUTION: The method for forming a thin film includes steps of: coupling a top end of a probe 15 that physically interacts with atoms constituting a crystal body SP to a coupling point on the surface of the crystal body SP; and tearing a single layer or a plurality of layers of the crystal body SP to form a crystal thin film by moving the probe 15 coupled to the surface of the crystal body SP to allow the coupling point to follow the probe 15.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成薄膜的方法，通过该方法以高精度形成晶体薄膜。解决方案：用于形成薄膜的方法包括以下步骤：将与构成晶体SP的原子物理相互作用的探针15的顶端耦合到晶体SP的表面上的耦合点; 并且通过移动耦合到晶体SP的表面的探针15以使耦合点跟随探针15来撕裂晶体SP的单层或多层以形成晶体薄膜。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009188092A Memory device and its manufacturing method 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：JP2009188092A
公开(公告)日：2009-08-20
申请号：JP2008024990
申请日：2008-02-05
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To stably hold electrons for a loner period of time by using a memory device having a charge accumulation part formed of a silicon nitride.
SOLUTION: A memory device includes an interlayer insulating layer 102 formed on a substrate 101, a gate electrode 103 formed on the interlayer insulating layer 102, a lower insulating layer 104 formed so as to cover the gate electrode 103, a charge accumulation part 105 formed of a silicon nitride and formed on the lower insulating layer 104, an upper insulating layer 106 formed on the charge accumulation part 105 so as to cover it, a channel layer 107 formed on the upper insulating layer 106, and a source 108 and a drain 109 that are arranged so as to sandwich a region where channels of the channel layer 107 are formed therebetween. The silicon nitride constituting the charge accumulation part 105 is made to contain hydrogen atoms introduced in a state of not being bonded with atoms constituting the silicon nitride.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过使用具有由氮化硅形成的电荷累积部分的存储器件来稳定地保持电子在一段时间内。解决方案：存储器件包括形成在衬底101上的层间绝缘层102，形成在层间绝缘层102上的栅电极103，形成为覆盖栅电极103的下绝缘层104，电荷累积由氮化硅形成并形成在下绝缘层104上的部分105，形成在电荷累积部105上以覆盖它的上绝缘层106，形成在上绝缘层106上的沟道层107和源108 以及布置成夹着形成沟道层107的沟道的区域的漏极109。构成电荷累积部105的氮化硅使含有以与构成氮化硅的原子不结合的状态引入的氢原子。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008203396A Optical switch and manufacturing method thereof 有权
标题翻译：光开关及其制造方法
公开(公告)号：JP2008203396A
公开(公告)日：2008-09-04
申请号：JP2007037473
申请日：2007-02-19
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： G02F1/355 , G02F1/01
摘要： PROBLEM TO BE SOLVED: To provide an optical control switch which uses a semiconductor or nonlinear optical material, the switch being chemically stable, high in quantum efficiency, and capable of performing high-frequency operation to contribute to high-speed/large-capacity communication.
SOLUTION: An optical switching material of nanosize is used and supported in a gap of a porous high-dielectric-constant material. For example, GaAs microcrystal 1 being an optical switching material is supported on a surface of a carbon nanohorn 2. Since the optical switching material is of nanosize, generation efficiency of optically excited electron/hole pairs is improved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供使用半导体或非线性光学材料的光学控制开关，该开关化学稳定，量子效率高，并且能够执行高频操作以有助于高速/大能力沟通。解决方案：使用纳米尺寸的光学开关材料并将其支撑在多孔高介电常数材料的间隙中。例如，作为光开关材料的GaAs微晶体1被支撑在碳纳米角2的表面上。由于光学开关材料为纳米尺寸，所以提高了光学激发的电子/空穴对的产生效率。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007230847A Method and apparatus for refining carbon nanotube 有权
标题翻译：用于精制碳纳米管的方法和装置
公开(公告)号：JP2007230847A
公开(公告)日：2007-09-13
申请号：JP2006057538
申请日：2006-03-03
申请人： Nec Corp , 日本電気株式会社
发明人： KAWAI TAKASUMI , MIYAMOTO YOSHIYUKI
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for refining single wall carbon nanotubes, by which the single wall carbon nanotubes can be purified easily with good precision by removing single wall carbon nanotubes having a specific chirality from a mixture of a plurality of single wall carbon nanotubes having different chiralities.
SOLUTION: The method for refining the single wall carbon nanotubes comprises removing single wall carbon nanotubes having a specific chirality from a mixture of a plurality of single wall carbon nanotubes having different chiralities by using singlet oxygen. The apparatus for refining the single wall carbon nanotubes is equipped with a chamber 1 which has, at its inside, a mounting part for mounting the mixture 6 of the plurality of single wall carbon nanotubes having different chiralities, an oxygen supply device 3 for supplying oxygen into the chamber 1, a singlet oxygen generation device (4,5) for generating singlet oxygen in the chamber 1, and a discharge device 7 for discharging the reaction gas formed after generating singlet oxygen in the chamber 1.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于精制单壁碳纳米管的方法和装置，通过该方法和装置，通过从单一壁碳纳米管的混合物中除去具有特定手性的单壁碳纳米管，可以以高精度容易地纯化单壁碳纳米管多个具有不同手性的单壁碳纳米管。解决方案：用于精制单壁碳纳米管的方法包括通过使用单线态氧从具有不同手性的多个单壁碳纳米管的混合物中除去具有特定手性的单壁碳纳米管。用于精制单壁碳纳米管的装置配备有室1，其内部具有用于安装具有不同手性的多个单壁碳纳米管的混合物6的安装部分，用于供应氧气的供氧装置3 进入室1中，用于在室1中产生单线态氧的单线态氧产生装置（4,5）和用于排出在室1中产生单线态氧之后形成的反应气体的放电装置7.版权所有（ C）2007，JPO＆INPIT

6. 发明专利

JP2003031792A Two-dimensional crystallized semiconductor and its producing method 审中-公开
标题翻译：二维结晶半导体及其生产方法
公开(公告)号：JP2003031792A
公开(公告)日：2003-01-31
申请号：JP2001220521
申请日：2001-07-19
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： H01L29/06 , H01L29/16
摘要： PROBLEM TO BE SOLVED: To solve a problem that a graphite laminar substance and a nanotube substance can be synthesized using only a light element and a technology combining a carbon nanotube and an ordinary semiconductor is not yet realized. SOLUTION: A graphite laminar substance is generated on the surface of a semiconductor by applying an electric field and injecting a large quantity of holes and then stripped from the surface. A nanotube substance is also synthesized by that process.
摘要翻译：要解决的问题：为了解决仅使用轻元素可以合成石墨层状物质和纳米管物质的问题，并没有实现组合碳纳米管和普通半导体的技术。解决方案：通过施加电场并注入大量的孔，然后从表面剥离，在半导体的表面上产生石墨层状物质。还通过该方法合成纳米管物质。

7. 发明专利

JPH10158093A FORMATION OF DIAMOND N-TYPE DOPED LAYER 失效
公开(公告)号：JPH10158093A
公开(公告)日：1998-06-16
申请号：JP31762896
申请日：1996-11-28
申请人： NEC CORP
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： C30B29/04 , H01L21/205 , H01L29/16
摘要： PROBLEM TO BE SOLVED: To obtain a diamond n-doped layer capable of being applied for a micro device element, being formed extremely thin and forming an n- semiconductor region selectively by forming a diamond layer and injecting a donor only near the surface layer. SOLUTION: This diamond layer is, for example, formed by CVD method on a Si substrate, and a donor preferably nitrogen atom is injected only near the surface layer. Alternatively, the diamond layer is grown, and in the final stage of growing, a gas preferably containing N atom (such as carbon nitride gas C3 H3 N and C2 H8 N2 ) is used to inject a donor preferably N into near the surface layer. It is enough to form the diamond layer to

8. 发明专利

JP2012104411A Life extended solar cell and manufacturing method thereof 审中-公开
标题翻译：生命延长的太阳能电池及其制造方法
公开(公告)号：JP2012104411A
公开(公告)日：2012-05-31
申请号：JP2010252919
申请日：2010-11-11
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a dye-sensitized solar cell which can be used for long hours under direct sunlight and a manufacturing method thereof.SOLUTION: The solar cell includes an anode containing organic molecules, an electrolyte layer, and a cathode, the organic molecules being a mixture of organic pigment molecules and transparent molecules which are transparent to visible rays. Also, the organic molecules may be one which has such a structure that the molecules transparent to visible rays are inserted into the skeleton of the organic pigment molecules. The manufacturing method involves applying organic molecules to the anode of the solar cell.
摘要翻译：要解决的问题：提供一种可以在阳光直射下长时间使用的染料敏化太阳能电池及其制造方法。解决方案：太阳能电池包括含有有机分子的阳极，电解质层和阴极，有机分子是对可见光透明的有机颜料分子和透明分子的混合物。此外，有机分子可以是具有将可见光透明的分子插入有机颜料分子的骨架的结构的有机分子。制造方法包括将有机分子施加到太阳能电池的阳极。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012012243A Apparatus for producing gaseous hydrogen and method for producing the same 审中-公开
标题翻译：用于生产气态氢的装置及其生产方法
公开(公告)号：JP2012012243A
公开(公告)日：2012-01-19
申请号：JP2010149216
申请日：2010-06-30
申请人： Nec Corp , 日本電気株式会社
发明人： MIYAMOTO YOSHIYUKI
IPC分类号： C01B3/00 , F17C11/00
CPC分类号： Y02E60/321 , Y02E60/324
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a large amount of hydrogen molecule (hydrogen gas), and to provide an apparatus for producing the same.SOLUTION: There is provided an apparatus for producing gaseous hydrogen, including a high vacuum vessel 1 in which gaseous state molecule adsorptive material 2 catches a molecule containing a hydrogen atom and a femtosecond laser beam irradiating device 4 which is disposed enabling to irradiate the gaseous state molecule adsorptive material 2 with a femtosecond laser beam.

10. 发明专利

JP2011159820A Transistor and manufacturing method thereof 审中-公开
标题翻译：晶体管及其制造方法
公开(公告)号：JP2011159820A
公开(公告)日：2011-08-18
申请号：JP2010020564
申请日：2010-02-01
申请人： Nec Corp , 日本電気株式会社
发明人： HIROSE KENJI , MIYAMOTO YOSHIYUKI
IPC分类号： H01L29/786 , B82B1/00 , C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a transistor with a low off-current while increasing a carrier mobility and reducing an applied voltage for an operation.
SOLUTION: The transistor includes a source electrode and a drain electrode mutually separated on a substrate and a channel between the source electrode and the drain electrode on the substrate. The transistor further includes a gate electrode at a prescribed interval on the channel. The channel consists of a carbon nanotube or a graphene or a metallic nanowire. The substrate includes a conductor pattern periodically patterning a plurality of conductor lines overpassing or underpassing the channel on a surface.
COPYRIGHT: (C)2011,JPO&INPIT

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