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1. 发明专利

JP2014191963A Precursor solution for lithium cobalt oxide film formation, and method for forming lithium cobalt oxide film by use thereof 审中-公开
标题翻译：用于锂钴氧化物膜形成的前驱体溶液及其使用的形成锂钴氧化物膜的方法
公开(公告)号：JP2014191963A
公开(公告)日：2014-10-06
申请号：JP2013065839
申请日：2013-03-27
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NOGUCHI TAKESHI , WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI
IPC分类号： H01M4/1391 , C01G51/00 , H01M4/525
CPC分类号： C01D15/02 , C01G51/42 , C23C18/1216 , C23C18/1225 , C23C18/1279 , H01M4/0404 , H01M4/1391 , H01M4/366 , H01M4/525 , H01M4/667 , H01M10/052 , H01M10/0525 , H01M10/058
摘要： PROBLEM TO BE SOLVED: To provide a precursor solution for LiCoOfilm formation which is superior in storage stability.SOLUTION: A precursor solution is arranged for forming a LiCoOfilm 12 which is used as a positive electrode material 11 of a thin film-type lithium secondary battery. The precursor solution for LiCoOfilm formation comprises an organic lithium compound, and an organic cobalt compound which are dissolved in an organic solvent. The organic lithium compound is a lithium salt of a carboxylic acid expressed by the general formula, CHCOOH(where 2≤n≤8).
摘要翻译：要解决的问题：提供一种存储稳定性优异的LiCoO膜形成前体溶液。溶液：将前体溶液布置成形成用作薄膜型锂二次电池的正极材料11的LiCoO膜12 。用于LiCoO膜形成的前体溶液包括溶解在有机溶剂中的有机锂化合物和有机钴化合物。有机锂化合物是由通式CHCOOH（其中2≤n≤8）表示的羧酸的锂盐。

2. 发明专利

JP2013211306A Pzt ferroelectric thin film manufacturing method 有权
标题翻译： PZT FERROELECTRIC THIN FILM MANUFACTURING方法
公开(公告)号：JP2013211306A
公开(公告)日：2013-10-10
申请号：JP2012078916
申请日：2012-03-30
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： DOI TOSHIHIRO , SAKURAI HIDEAKI , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01L21/316 , C01G25/00 , H01G4/12 , H01G4/33 , H01L21/336 , H01L21/8246 , H01L27/105 , H01L29/788 , H01L29/792 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/39
CPC分类号： H01B13/06 , C23C18/1216 , C23C18/1283 , H01G4/1245 , H01G4/33 , H01G7/06 , H01L28/55 , H01L29/78391 , H01L37/025 , H01L41/1876 , H01L41/318 , H03H9/02574 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To manufacture a PZT ferroelectric thin film which does not cause cracks and deterioration in film density and which is precise and excellent in crystal orientation even when a thick film of 100 nm or more per one layer is coated, calcined and burned by using a CSD method.SOLUTION: In manufacturing of a PZT ferroelectric thin film on a lower electrode of a substrate having the lower electrode with a crystal plane oriented in a (111) axial direction by coating the lower electrode with a composition for PZT ferroelectric thin film formation and performing calcination and subsequent burning for causing crystallization to manufacture the PZT ferroelectric thin film, the calcination is moderately performed by a temperature pattern including: a first keeping stage of raising a predetermined temperature such as ambient temperature and keeping the temperature within a range of 200-350°C by using infrared rays on a sol film which is formed by coating the composition for PZT ferroelectric film formation on a surface of the lower electrode by a CSD method; and a second keeping stage of raising the temperature kept in the first keeping stage to a temperature within a range of 350-500°C which is higher than the temperature kept in the first keeping stage.
摘要翻译：要解决的问题：为了制造不会引起裂纹和膜密度劣化的PZT铁电薄膜，即使在每层涂覆100nm以上的厚膜时，也能够精确且优异的结晶取向，煅烧和烧制通过使用CSD方法。在通过用PZT铁电体的组合物涂覆下电极的基板的下电极上制造具有以（111）轴向取向晶面的下电极的PZT铁电薄膜薄膜形成并进行煅烧和随后的烧结以引起结晶以制造PZT铁电薄膜，通过温度模式适度地进行煅烧，包括：提高诸如环境温度的预定温度并将温度保持在通过在通过涂布P组合物形成的溶胶膜上使用红外线来测量范围为200-350℃ 通过CSD法在下电极的表面上形成ZT铁电薄膜; 以及将保持在第一保持阶段的温度提高到高于保持在第一保持阶段的温度的350-500℃的温度的第二保持阶段。

3. 发明专利

JP2012256851A Ferroelectric thin film manufacturing method 有权
标题翻译：电磁薄膜制造方法
公开(公告)号：JP2012256851A
公开(公告)日：2012-12-27
申请号：JP2012073404
申请日：2012-03-28
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI , DOI TOSHIHIRO
IPC分类号： H01L21/8246 , H01B3/00 , H01B3/12 , H01L21/316 , H01L27/105 , H01L41/18 , H01L41/187 , H01L41/24
CPC分类号： H01L41/1876 , C30B1/023 , C30B29/16 , H01L21/02186 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02304 , H01L21/28291 , H01L28/55 , H01L28/56 , H01L28/65 , H01L28/75 , H01L29/516 , H01L35/22 , H01L35/34 , H01L41/0815 , H01L41/318 , H01L41/319 , Y10T428/249921 , Y10T428/25 , Y10T428/26 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric thin film manufacturing method capable of simply obtaining a ferroelectric thin film whose crystal orientation is preferentially controlled on a (110) face without a seed layer or a buffer layer.SOLUTION: In this improved method, a composition for forming a ferroelectric thin film is applied on a lower electrode of a substrate having the lower electrode whose crystalline plane is oriented in a (111) axial direction, heated and crystallized to manufacture a ferroelectric thin film. The ferroelectric thin film is constituted by an orientation control layer whose crystal orientation is preferentially controlled on a (110) face. Thickness of the orientation control layer after crystallization is in a range of 5 nm-30 nm.
摘要翻译：要解决的问题：提供一种铁电薄膜制造方法，其能够简单地获得其结晶取向优选地控制在（110）面上而没有种子层或缓冲层的铁电薄膜。解决方案：在这种改进的方法中，用于形成铁电薄膜的组合物被施加到具有下部电极的基底的下部电极上，该下部电极的晶体面在（111）轴向取向，加热并结晶以制造铁电薄膜。铁电薄膜由在（110）面优先控制晶体取向的取向控制层构成。结晶后的取向控制层的厚度为5nm〜30nm的范围。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012256850A Ferroelectric thin film manufacturing method 有权
标题翻译：电磁薄膜制造方法
公开(公告)号：JP2012256850A
公开(公告)日：2012-12-27
申请号：JP2012073402
申请日：2012-03-28
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI , DOI TOSHIHIRO
IPC分类号： H01L21/316 , H01G4/12 , H01G4/30 , H01G4/33 , H01L21/8246 , H01L27/105
CPC分类号： H01L21/02197 , B05D3/0254 , B05D5/00 , H01L21/022 , H01L21/02282 , H01L21/28291 , H01L28/55 , H01L28/65 , H01L28/75 , H01L41/0815 , H01L41/319 , Y10T428/249921 , Y10T428/25 , Y10T428/26 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric thin film manufacturing method capable of simply obtaining a ferroelectric thin film whose crystal orientation is preferentially controlled on a (100) face without a seed layer or a buffer layer.SOLUTION: In this improved method, a composition for forming a ferroelectric thin film is applied on a lower electrode of a substrate having the lower electrode whose crystalline plane is oriented in a (111) axial direction, heated and crystallized to manufacture a ferroelectric thin film. The ferroelectric thin film is constituted by an orientation control layer whose crystal orientation is preferentially controlled on a (100) face. Thickness of the orientation control layer after crystallization is in a range of 35 nm-150 nm.
摘要翻译：要解决的问题：提供一种铁电薄膜制造方法，其能够简单地获得其结晶取向优先被控制在（100）面上而没有种子层或缓冲层的铁电薄膜。解决方案：在这种改进的方法中，用于形成铁电薄膜的组合物被施加到具有下部电极的基底的下部电极上，该下部电极的晶体面在（111）轴向取向，加热并结晶以制造铁电薄膜。铁电薄膜由在（100）面优先控制晶体取向的取向控制层构成。结晶后的取向控制层的厚度在35nm〜150nm的范围内。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012054538A Composition for forming dielectric thin film, method for forming dielectric thin film and dielectric thin film formed by the method 有权
标题翻译：用于形成介电薄膜的组合物，用于形成介电薄膜的方法和由该方法形成的介电薄膜
公开(公告)号：JP2012054538A
公开(公告)日：2012-03-15
申请号：JP2011158537
申请日：2011-07-20
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI , GUEGAIN GUILLAUME
IPC分类号： H01L21/316 , C04B35/468 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L37/02 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/24
CPC分类号： H01G7/06 , C04B35/4682 , C04B35/47 , C04B35/62218 , C04B2235/3213 , C04B2235/3215 , C04B2235/3232 , H01L28/55
摘要： PROBLEM TO BE SOLVED: To provide a composition for forming a dielectric thin film, which can enhance tunability, leakage current characteristics and a dielectric constant in a thin film capacitor and the like; a method for forming the dielectric thin film; and the dielectric thin film.SOLUTION: The composition for forming the dielectric thin film is a liquid composition for forming a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide A represented by general formula BaSrTiO(where 0.2
摘要翻译：要解决的问题：提供一种用于形成电介质薄膜的组合物，其可以提高薄膜电容器等中的可调谐性，漏电流特性和介电常数; 一种形成电介质薄膜的方法; 和电介质薄膜。解决方案：用于形成电介质薄膜的组合物是用于形成由通式Ba （其中0.2

6. 发明专利

JP2014168072A Method for producing pzt ferroelectric thin film 有权
标题翻译：生产PZT微波薄膜的方法
公开(公告)号：JP2014168072A
公开(公告)日：2014-09-11
申请号：JP2014071589
申请日：2014-03-31
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI , DOI TOSHIHIRO
IPC分类号： H01L41/319 , H01L21/316 , H01L41/317 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a ferroelectric thin film with an orientation control layer that has preferred crystal orientation on a plane with a fine-grained crystal texture, by suppressing anomalous grain growth of crystals in the orientation control layer.SOLUTION: A composition for forming a ferroelectric thin film is coated on a lower electrode 11 of a substrate 10 having crystal faces oriented in the 111 axis direction, calcined, and subsequently fired to be crystallized, and thereby a ferroelectric thin film is formed. The composition is coated on the lower electrode and calcined to form a crystal grain diameter control layer having a thickness of 1 nm to 100 nm, then the composition is coated on the crystal grain diameter control layer, calcined, and subsequently fired to form an orientation control layer 13. An amount of coating of the composition is set such that a layer thickness of the orientation control layer after crystallization is in a range of 35 nm to 150 nm, and thereby the orientation control layer 13 has preferred crystal orientation on the 100 plane.
摘要翻译：要解决的问题：通过抑制取向控制层中的晶体的异常晶粒生长，提供具有在具有细晶粒结构的平面上具有优选的晶体取向的取向控制层的铁电薄膜的制造方法。：用于形成铁电薄膜的组合物涂布在具有沿111轴方向取向的晶面的基板10的下电极11上，煅烧，随后烧结结晶化，从而形成铁电薄膜。将组合物涂布在下电极上并煅烧以形成厚度为1nm至100nm的晶粒直径控制层，然后将组合物涂布在晶粒直径控制层上，煅烧并随后烧制以形成取向控制层13.组合物的涂布量被设定为使得结晶后的取向控制层的层厚度在35nm至150nm的范围内，因此取向控制层13在100上具有优选的晶体取向平面。

7. 发明专利

JP2013211329A Pzt ferroelectric thin film and method for manufacturing the same 审中-公开
标题翻译： PZT FERROELECTRIC THIN FILM AND METHOD FOR MANUFACTURING THE SAME
公开(公告)号：JP2013211329A
公开(公告)日：2013-10-10
申请号：JP2012079197
申请日：2012-03-30
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NOGUCHI TAKESHI , DOI TOSHIHIRO , SAKURAI HIDEAKI , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01L41/39 , C04B35/491 , H01G4/12 , H01G4/33 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L41/09 , H01L41/18 , H01L41/187
CPC分类号： H01L41/1876 , H01G4/018 , H01G4/1245 , H01L28/56 , H01L29/78391 , H01L37/025 , H01L41/0815 , H01L41/318 , H01L41/319 , H03H9/02031 , Y10T428/24975 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a PZT ferroelectric thin film capable of having high life reliability, while having dielectric characteristic equivalent to a conventional ferroelectric thin film, and a method for manufacturing the same.SOLUTION: In a PZT ferroelectric thin film formed on a bottom electrode of a substrate having the bottom electrode whose crystalline plane is oriented in a (111) axial direction, the ferroelectric thin film comprises: an orientation control layer formed on the bottom electrode and having a film thickness whose crystal orientation is preferentially controlled on a (111) face, within a range of 45nm to 270nm; and a film thickness adjustment layer formed on the orientation control layer and having the same crystal orientation as the orientation control layer, and a boundary face is formed between the orientation control layer and the film thickness adjustment layer.
摘要翻译：要解决的问题：提供一种能够具有高寿命可靠性的PZT铁电薄膜，同时具有与常规铁电薄膜相当的介电特性及其制造方法。解决方案：在形成在PZT铁电薄膜上的PZT铁电薄膜具有晶体面朝向（111）轴向的底部电极的基板的底部电极，所述强电介质薄膜包括：取向控制层，形成在所述底部电极上，并且具有优选控制晶体取向的膜厚度（111）面在45nm至270nm的范围内; 以及形成在取向控制层上并具有与取向控制层相同的晶体取向的膜厚度调节层，并且在取向控制层和膜厚调整层之间形成边界面。

8. 发明专利

JP2013211309A Sol-gel solution for ferroelectric thin film formation 有权
标题翻译：用于电磁薄膜形成的SOL-GEL解决方案
公开(公告)号：JP2013211309A
公开(公告)日：2013-10-10
申请号：JP2012078920
申请日：2012-03-30
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： DOI TOSHIHIRO , SAKURAI HIDEAKI , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01L21/316 , C01G25/00 , H01G4/33 , H01L21/31 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/39
CPC分类号： H01L41/1876 , C23C18/1216 , C23C18/1254 , C23C18/1283 , C23C18/1291
摘要： PROBLEM TO BE SOLVED: To provide a sol-gel solution for ferroelectric thin film formation which makes possible to increase thickness of a layer formed by one coat according to a sol-gel method when forming a PZT-based ferroelectric thin film, and to arrange a PZT film having a crack-free, dense film structure even after preliminary and regular baking processes.SOLUTION: The sol-gel solution for ferroelectric thin film formation comprises: a PZT-based compound; a polyvinylpyrrolidone-containing polymer compound for viscosity control; and an organic dopant containing a formamide-based solvent. The sol-gel solution includes no less than 17 mass% of the PZT-based compound in terms of oxide. The molar ratio of the PZT-based compound to the polyvinylpyrrolidone is arranged so as to be 1:0.1 to 0.5 in terms of monomers. The formamide-based solvent accounts for 3-13 mass% of the sol-gel solution. The sol-gel solution arranged like this makes possible: to increase the thickness of a layer formed by one coat; to increase the production efficiency; and to form a dense film having no crack even after preliminary and regular baking processes.
摘要翻译：要解决的问题：提供一种用于铁电薄膜形成的溶胶 - 凝胶溶液，其可以在形成基于PZT的铁电薄膜时根据溶胶 - 凝胶法增加通过一次涂层形成的层的厚度，并且布置即使经过初步和规则的烘烤工艺，PZT薄膜也具有无裂纹，致密的薄膜结构。解决方案：用于铁电薄膜的溶胶 - 凝胶溶液包括：基于PZT的化合物; 用于粘度控制的含聚乙烯吡咯烷酮的聚合物化合物; 和含有甲酰胺类溶剂的有机掺杂物。溶胶 - 凝胶溶液含有不少于17质量％的PZT类化合物，就氧化物而言。基于PZT的化合物与聚乙烯吡咯烷酮的摩尔比以单体计为1：0.1〜0.5。甲酰胺类溶剂占溶胶 - 凝胶溶液的3-13质量％。这样布置的溶胶 - 凝胶溶液成为可能：增加由一层涂层形成的层的厚度; 提高生产效率; 并且即使在预先和定期的烘烤处理之后也形成没有裂纹的致密膜。

9. 发明专利

JP2013129588A Composition for forming dielectric thin film, method of forming dielectric thin film, and dielectric thin film formed by the same 有权
标题翻译：形成介质薄膜的组合物，形成介质薄膜的方法和由其形成的介电薄膜
公开(公告)号：JP2013129588A
公开(公告)日：2013-07-04
申请号：JP2012205593
申请日：2012-09-19
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI , GUEGAN GUILLAUME
IPC分类号： C04B35/468 , H01B3/00 , H01B3/12 , H01G4/12 , H01G4/33
CPC分类号： C09D5/00 , H01B3/10 , H01G4/33
摘要： PROBLEM TO BE SOLVED: To provide a composition for forming a dielectric thin film that expresses high tunability in a thin film capacitor or the like and can reduce dielectric loss of the dielectric thin film while maintaining excellent leak current characteristics, a method of forming the dielectric thin film, and the dielectric thin film.SOLUTION: A liquid composition is used for forming a thin film in the form of a mixed complex metal oxide in which a complex oxide B containing Cu (copper) and a complex oxide C containing Mn (manganese) are mixed with a complex metal oxide A denoted by a general formula: BaSrTiO. In an organometallic organic solvent, a raw material for constituting the composite metal oxide A and a raw material for constituting the composite oxide B are solved at a rate for providing a metal atom ratio denoted by the general formula and within an extent such that the molar ratio B/A of A and B is 0.002
摘要翻译：要解决的问题：提供一种用于形成表现薄膜电容器等中的高可调谐性的电介质薄膜的组合物，并且可以在保持优异的漏电流特性的同时降低电介质薄膜的介电损耗，形成电介质的方法薄膜和电介质薄膜。溶液：使用液体组合物形成混合复合金属氧化物形式的薄膜，其中含有Cu（铜）的复合氧化物B和含有Mn（Mn）的复合氧化物C ）与由通式BaSrTiO表示的复合金属氧化物A混合。在有机金属有机溶剂中，用于构成复合金属氧化物A的原料和用于构成复合氧化物B的原料以提供由通式表示的金属原子比率的速度溶解，并使其摩尔 A和B的比例B / A为0.002

10. 发明专利

JP2011134553A Method of forming dielectric thin film, and dielectric thin film formed by the method 有权
标题翻译：形成介质薄膜的方法和由该方法形成的介电薄膜
公开(公告)号：JP2011134553A
公开(公告)日：2011-07-07
申请号：JP2009292322
申请日：2009-12-24
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： WATANABE TOSHIAKI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI
IPC分类号： H01B3/12 , C04B35/00 , C04B35/468 , C04B35/64 , H01G4/12 , H01G4/30 , H01G4/33 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a dielectric thin film by which high tunability and high dielectric constant can be developed when used for the thin film capacitor or the like, and to provide the dielectric thin film.
SOLUTION: In the method, the dielectric thin film is formed by firing an unfired film formed on a substrate after a step of coating a composition for forming the dielectric thin film on a heat-resistant substrate and drying the coated composition is repeated to obtain the unfired film of the composition having a desired thickness. When the dielectric thin film to be formed is a thin film having perovskite type oxide as the main component, firing of the unfired film formed on the substrate includes at least a first firing by heating with rapid temperature rise at 60 to 6,000 °C/minute, and a second firing by heating with low temperature rise at 0.5 to 30 °C/minute in this order.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成电介质薄膜的方法，当用于薄膜电容器等时可以显影出高可调性和高介电常数，并提供电介质薄膜。解决方案：在该方法中，电介质薄膜通过在将耐热基材上形成电介质薄膜的组合物涂布步骤之后，对形成在基板上的未烧结薄膜进行焙烧形成，然后重复该涂覆组合物的干燥以获得具有期望厚度的组合物的未烧制膜。当要形成的电介质薄膜是以钙钛矿型氧化物为主要成分的薄膜时，在基板上形成的未烧成的薄膜的烧成至少包括以60〜6000℃/分钟的升温速度进行加热的第1次烧成，并且按照该顺序以0.5〜30℃/分钟的低温升温进行第二次点火。版权所有（C）2011，JPO＆INPIT

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