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1. 发明专利

JP2012043908A Vacuum processing apparatus and plasma treatment method 有权
标题翻译：真空加工设备和等离子体处理方法
公开(公告)号：JP2012043908A
公开(公告)日：2012-03-01
申请号：JP2010182563
申请日：2010-08-17
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , TAKEUCHI YOSHIAKI , MIYAZONO NAOYUKI , OTSUBO EIICHIRO , NAKAO TEIKO
IPC分类号： H01L21/205 , C23C16/509 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable plasma treatment on a large substrate, and also capable of increasing the production volume of plasma-treated substrates.SOLUTION: A vacuum processing apparatus comprises: a discharge chamber 2 made up of a ridge waveguide having ridge electrodes 21a and 21b which are arranged in parallel to and opposed to each other and generate plasma therebetween; a pair of converters 3A and 3B which are adjacently arranged on both sides in the lengthwise direction of the discharge chamber 2, and which transmit high-frequency power sources 5A and 5B to the discharge chamber 2 to thereby generate the plasma; a substrate transfer device 44 which sends a substrate S before plasma treatment to a predetermined position of the ridge electrodes 21a and 21b, and sends out the substrate S after the plasma treatment from the predetermined position of the ridge electrodes 21a and 21b; the high-frequency power sources 5A and 5B which supply high-frequency power; and gas discharge means which discharges gas between the ridge electrodes 21a and 21b and the substrate S. A dimension in the width direction (direction H) of the ridge electrodes 21a and 21b are set to be larger than a dimension in the lengthwise direction (direction L). A transfer direction C of the substrate S is made to extend along the width direction H of the ridge electrodes 21a and 21b.
摘要翻译：要解决的问题：提供一种能够在大的基板上进行稳定的等离子体处理并且还能够提高等离子体处理的基板的生产量的真空处理装置。解决方案：真空处理设备包括：排放室2，其由具有脊电极21a和21b的脊波导构成，脊脊电极21a和21b彼此平行并相对排列并在其间产生等离子体; 一对转换器3A和3B，其相邻地布置在放电室2的长度方向的两侧，并且将高频电源5A和5B发送到放电室2，从而产生等离子体; 将等离子体处理前的基板S发送到脊电极21a，21b的规定位置的基板搬送装置44，从脊电极21a，21b的规定位置经过等离子体处理后的基板S发出; 提供高频电源的高频电源5A和5B; 以及在脊电极21a和21b与基板S之间排出气体的气体放电装置。脊电极21a和21b的宽度方向（方向H）的尺寸被设定为大于纵向（方向 L）。使基板S的转印方向C沿着脊电极21a，21b的宽度方向H延伸。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012036448A Vacuum treatment apparatus and plasma treatment method 有权
标题翻译：真空处理装置和等离子体处理方法
公开(公告)号：JP2012036448A
公开(公告)日：2012-02-23
申请号：JP2010178109
申请日：2010-08-06
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MASHIMA HIROSHI , TAKEUCHI YOSHIAKI , NAKAO TEIKO , SASAGAWA EISHIRO , MIYAZONO NAOYUKI , OTSUBO EIICHIRO
IPC分类号： C23C16/505 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus in which production of a reflected wave in the boundary part between a converter and a discharge chamber is suppressed, and plasma treatment of high quality can be performed by a simple, compact and inexpensive structure.SOLUTION: The apparatus includes: a discharge chamber 2 composed of a ridge waveguide having a pair of ridge electrodes 21a, 21b parallelly opposed to each other and in which plasma is generated therebetween; converters 3A, 3B having a pair of planar ridge parts 31a, 31b adjacently provided to both the edges of the discharge chamber 2 and parallelly opposed to each other; and a power source means feeding high frequency power to the ridge parts 31a, 31b. The opposed distance d1 of the ridge electrodes of a pair of the ridge parts 21a, 21b is set to be narrower than the opposed distance d2 of a pair of the ridge parts 31a, 31b and ridge level differences D are present, and the parts of the ridge level differences D are provided with gradually reducing parts 32a, 32b connecting a pair of the ridge parts 31a, 31b to a pair of the ridge electrodes 21a, 21b respectively by gradually reducing the respective opposed distances.
摘要翻译：要解决的问题：提供一种真空处理装置，其中抑制了转炉和排气室之间的边界部分中的反射波的产生，并且可以通过简单，紧凑和简单的等离子体处理来实现高质量的等离子体处理廉价的结构。解决方案：该装置包括：排出室2，其由具有彼此平行相对并且其间产生等离子体的一对脊电极21a，21b的脊波导构成; 转换器3A，3B具有相邻地设置在排出室2的两个边缘并且彼此相对的一对平面脊部31a，31b; 并且电源意味着向脊部31a，31b馈送高频电力。一对脊部21a，21b的脊电极的相对距离d1被设定为比一对脊部31a，31b的相对距离d2窄，并且存在脊高度差D，通过逐渐减小各自的相对距离，脊级差D分别具有将一对脊部31a，31b连接到一对脊电极21a，21b的逐渐减小部分32a，32b。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011233938A Vacuum processing apparatus and substrate transfer method using the same 审中-公开
标题翻译：真空加工装置和基板转印方法
公开(公告)号：JP2011233938A
公开(公告)日：2011-11-17
申请号：JP2011180998
申请日：2011-08-22
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MIYAZONO NAOYUKI , YOKOYAMA TADAYUKI , SASAGAWA EISHIRO
IPC分类号： H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus which is easy to adjust and transfers a substrate at a high speed when film formation processing etc., is performed using a large-sized substrate.SOLUTION: The vacuum processing apparatus comprises: a transfer chamber 10; first processing chambers 12-1 and 12-2; second processing chambers 12-3 and 12-4; first substrate transfer trucks 20-1 and 20-2; and second substrate transfer trucks 20-3 and 20-4. The transfer chamber 10 extends in an X direction and includes a first transfer region 10-1 and a second transfer region 10-2. The first processing chambers 12-1 and 12-2 are connected to the side of the first transfer region 10-2. The second processing chambers 12-3 and 12-4 are connected to the side of the second transfer region 10-2. The first substrate transfer trucks 20-1 and 20-2 move in the first transfer region 10-1. The second substrate transfer trucks 20-3 and 20-4 move in the second transfer region 10-2. The first substrate transfer trucks 20-1 and 20-2 carry substrates 2 in and out of at least one of the second processing chambers 12-3 and 12-4, and the first processing chambers 12-1 and 12-2. The second substrate transfer trucks 20-3 and 20-4 carry substrates 2 in and out of at least one of the second processing chambers 12-3 and 12-4.
摘要翻译：要解决的问题：提供一种使用大尺寸基板进行成膜处理等时容易调节和高速转印基板的真空处理装置。解决方案：真空处理设备包括：传送室10; 第一处理室12-1和12-2; 第二处理室12-3和12-4; 第一底盘搬运车20-1和20-2; 和第二基板输送卡车20-3和20-4。传送室10在X方向上延伸，并且包括第一传送区域10-1和第二传送区域10-2。第一处理室12-1和12-2连接到第一传送区域10-2的一侧。第二处理室12-3和12-4连接到第二传送区域10-2的一侧。第一基板搬运车20-1和20-2在第一传送区域10-1中移动。第二基板搬运车20-3和20-4在第二传送区域10-2中移动。第一基板输送卡车20-1和20-2在第二处理室12-3和12-4以及第一处理室12-1和12-2中的至少一个中携带基板2。第二基板输送卡车20-3和20-4将基板2放入和移出至少一个第二处理室12-3和12-4。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011038123A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2011038123A
公开(公告)日：2011-02-24
申请号：JP2009183534
申请日：2009-08-06
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： WADA TAKAYUKI , TAKEUCHI YOSHIAKI , KAWAMURA KEISUKE , SASAGAWA EISHIRO
IPC分类号： C23C16/509 , C23C16/24 , C23C16/52 , H01L21/205 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To uniformize the film thickness distribution, and to suppress the reflected power in a discharge electrode. SOLUTION: A substrate processing apparatus includes high frequency power supply units 17a, 17b for outputting the high frequency power of the predetermined frequency through the phase modulation, an opposing electrode 3 supporting a substrate, a discharge electrode which is supplied with the high frequency power output from the high frequency power supply units to form plasma between the opposing electrode and itself by the high frequency power, a matching box 13 which has a plurality of matching circuits 20a-20d each of which being set to different impedance, and matches the impedance on the discharge electrode side to the impedance on the high frequency power supply unit side, and a selection means 22 for selecting a matching circuit in which the impedance on the discharge electrode side fluctuated by the phase modulation is matched with the impedance on the high frequency power supply unit side out of the plurality of matching circuits when supplying the high frequency power. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：使膜厚分布均匀化并抑制放电电极中的反射功率。解决方案：基板处理装置包括用于通过相位调制输出预定频率的高频功率的高频电源单元17a，17b，支撑基板的对置电极3，提供高电平的放电电极从高频电源单元输出的高频功率，通过高频功率在对置电极与其本身之间形成等离子体，具有多个匹配电路20a-20d的匹配盒13，每个匹配电路被设置为不同的阻抗，并且匹配放电电极侧的阻抗与高频电源单元侧的阻抗的关系，以及选择装置22，用于选择放电电极侧的阻抗通过相位调制波动的匹配电路与当提供高频功率时，多个匹配电路中的高频电源单元侧。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010232348A Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：JP2010232348A
公开(公告)日：2010-10-14
申请号：JP2009077207
申请日：2009-03-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： NAKANO SHINYA , FUJIYAMA TAIZO , YAMANE TSUKASA , SASAGAWA EISHIRO
IPC分类号： H01L21/205 , C23C16/52 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus that achieves the stability of quality of a film to be formed. SOLUTION: The vacuum processing apparatus is provided with: a vacuum container that film forming processing is executed therein; a substrate table 12 on which a substrate S subjected to film forming processing is placed; a substrate heater 13 that controls a temperature distribution in the substrate S and one in the substrate table 12 within a prescribed range; temperature measuring parts 23-1 to 23-9 that measure temperatures in a plurality of parts on a face in contact with the substrate S of the substrate table 12; and a control part 6 that starts execution of film forming processing to the substrate S before the end of the temperature stabilization period for equalizing the temperature distribution of the substrate S after the substrate S is placed on the substrate table 12. The control part 6 controls the length of the stabilization period on the basis of the temperature difference between the temperatures in the plurality of parts. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种实现要形成的膜的质量的稳定性的真空处理装置。解决方案：真空处理设备设有：在其中执行成膜处理的真空容器; 放置有进行成膜处理的基板S的基板台12; 基板加热器13，其将基板S中的温度分布和基板台12中的温度分布控制在规定范围内; 温度测量部23-1〜23-9，其测量与基板台12的基板S接触的面上的多个部位的温度; 以及控制部6，其在基板S被放置在基板台12上之后，在用于均衡基板S的温度分布的温度稳定期结束之前开始对基板S进行成膜处理。控制部6控制基于多个部分中的温度之间的温度差来确定稳定期的长度。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010077538A Heater for heating substrate 有权
标题翻译：加热加热器
公开(公告)号：JP2010077538A
公开(公告)日：2010-04-08
申请号：JP2009289716
申请日：2009-12-21
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , YAMAUCHI YASUHIRO , FUKAGAWA MASAYUKI , FUJIYAMA TAIZO
IPC分类号： C23C16/46 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To carry out a film-forming treatment while keeping a large-sized substrate at a uniform temperature. SOLUTION: Temperature at the center of a heater cover 115 supporting the substrate K is measured, and amount of heat generated by a heater 116 at the center of the heater cover 115 is determined by PID control so that the temperature measured at the center of the heater cover 115 approaches a target temperature. For areas outside a central area of the heater cover 115, the heater 116 generates heat in amounts in proportion to the amount of heat generated by the heater 116 at the center of the heater cover 115, based on proportionality coefficients predetermined for individual areas. The shorter the tact time (i.e. time required for introducing the substrate K into a film-forming chamber 112, subjecting the same to the film-forming treatment and discharging the same from the film-forming chamber 112), the smaller the difference between the amount of heat generated by the heater 116 near the center of the substrate K and those at edges of the substrate K. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在保持大尺寸基板均匀温度的同时进行成膜处理。
解决方案：测量支撑基板K的加热器盖115的中心处的温度，并且通过PID控制确定由加热器盖115的中心处的加热器116产生的热量，使得在加热器盖115的中心接近目标温度。对于加热器盖115的中心区域外的区域，加热器116基于对于各个区域预先确定的比例系数，在与加热器盖115的中心处的加热器116产生的热量成比例地产生热量。节拍时间越短（即，将基板K引入成膜室112，对其进行成膜处理并将其从成膜室112排出）所需的时间越短，加热器116在基板K的中心附近产生的热量和基板K的边缘处产生的热量。（C）2010，JPO＆INPIT

7. 发明专利

JP2010040922A Method of manufacturing photoelectric conversion device 审中-公开
标题翻译：制造光电转换器件的方法
公开(公告)号：JP2010040922A
公开(公告)日：2010-02-18
申请号：JP2008204380
申请日：2008-08-07
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： KOKAJI SOJI , YAMANE TSUKASA , SASAGAWA EISHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device which improves productivity, and at the same time, improves the positioning accuracy of a groove formed on a substrate, and improves manufacturing quality. SOLUTION: In the method of manufacturing the photoelectric conversion device 90, when the photoelectric conversion device 90 is manufactured repeating the processing of grooves 10, 11, 12 into a film which is film formed after deposition is performed on a substrate 1, at least the grooves 11, 12 processed at second times or later are processed in a determined position based on an alignment mark M placed to the side 40 of the substrate 1, the method is characterized in that when the alignment mark M can not be detected in the time of processing the groove 11, 12, deposits adhered near the position where the alignment mark M is present are removed by wiping-off equipment 21. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高生产率的光电转换装置的制造方法，同时提高形成在基板上的槽的定位精度，并提高制造质量。解决方案：在制造光电转换装置90的方法中，当制造光电转换装置90重复进行槽10,11,12的处理成为在基板1上进行沉积后形成的膜时，至少在第二次或以后处理的槽11,12基于放置到基板1的侧面40的对准标记M而在确定的位置处理，其特征在于，当不能检测到对准标记M时在加工槽11,12时，通过擦拭装置21去除附着在存在对准标记M的位置附近的沉积物。（C）2010，JPO＆INPIT

8. 发明专利

JP2009144205A Vacuum treatment system 审中-公开
标题翻译：真空处理系统
公开(公告)号：JP2009144205A
公开(公告)日：2009-07-02
申请号：JP2007323556
申请日：2007-12-14
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： WADA TAKAYUKI , TAKEUCHI YOSHIAKI , SASAGAWA EISHIRO
IPC分类号： C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment system where deterioration in a film distribution caused by a change in the intervals of divided electrodes can be prevented.
SOLUTION: The vacuum treatment system is provided with: counter electrodes at which a substrate is arranged; a plurality of bar-shaped vertical electrodes 3Z elongating along the counter electrodes and further arranged in parallel at first prescribed intervals W1 each other; and a plurality of divided electrodes 3 having a pair of bar-shaped horizontal electrodes 3Y connecting the edge parts of the plurality of the bar-shaped vertical electrodes 3Z. A plurality of the divided electrodes 3 are arranged in parallel at second prescribed intervals W2 having a width more than the first prescribed intervals W1 and less than intervals in which at least a thermal expansion length in the divided electrodes 3 is added to the first prescribed intervals W1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种真空处理系统，其可以防止由分割电极的间隔的变化导致的膜分布的劣化。解决方案：真空处理系统设有：布置基板的相对电极; 多个沿对置电极延伸的条形垂直电极3Z，并且还以第一规定间隔W1彼此平行布置; 以及多个分割电极3，其具有连接多个条形垂直电极3Z的边缘部分的一对条形水平电极3Y。多个分割电极3在宽度大于第一规定间隔W1的第二规定间隔W2上并列布置，并且小于在第一规定间隔中至少加上分割电极3的热膨胀长度的间隔 W1。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009144193A Method for cleaning plasma treatment apparatus, substrate for cleaning plasma treatment apparatus, and method for producing solar cell 审中-公开
标题翻译：用于清洁等离子体处理装置的方法，用于清洁等离子体处理装置的基板和用于生产太阳能电池的方法
公开(公告)号：JP2009144193A
公开(公告)日：2009-07-02
申请号：JP2007321989
申请日：2007-12-13
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , TAKEUCHI YOSHIAKI
IPC分类号： C23C16/44 , H01L21/205 , H01L21/3065 , H01L31/04 , H05H1/46
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a substrate for cleaning a plasma treatment apparatus, which can effectively collect the dust of particles, and to provide a method for cleaning the plasma treatment apparatus. SOLUTION: The substrate for cleaning the plasma treatment apparatus is used in a treatment chamber; is electrically charged when plasma is generated in the treatment chamber to adsorb the particles existing in the treatment chamber; and has a dielectric substrate and a metal film formed on one face of the dielectric substrate. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2009065030A Photoelectric converting device, and manufacturing method for the photoelectric converting device 审中-公开
标题翻译：光电转换装置及光电转换装置的制造方法
公开(公告)号：JP2009065030A
公开(公告)日：2009-03-26
申请号：JP2007232646
申请日：2007-09-07
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , KATO YOSHINOBU , NAWATA YOSHIICHI
IPC分类号： H01L31/042
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide technique for easily installing an ID mark, even on a substrate having an end surface polished into a curved surface, for reading. SOLUTION: This photoelectric conversion device is provided with a substrate, where a photoelectric conversion unit is formed and the ID mark stuck on the end surface of the substrate; and the end surface of the substrate is the curved surface, the ID mark has a sheet stuck on the end surface of the substrate, and identification information for identifying the substrate is drawn on the sheet. COPYRIGHT: (C)2009,JPO&INPIT

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