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1. 发明专利

JP2012038596A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2012038596A
公开(公告)日：2012-02-23
申请号：JP2010178108
申请日：2010-08-06
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , TAKEUCHI YOSHIAKI , MIYAZONO NAOYUKI , OTSUBO EIICHIRO , NAKAO TEIKO
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable film formation processing on a large substrate by suppressing heat deformation of a ridge electrode and the substrate.SOLUTION: A vacuum processing apparatus comprises: a discharge chamber 2 which includes a ridge waveguide having an exhaust-side ridge electrode 21a and a substrate-side ridge electrode 21b for generating plasma; a pair of converters which transmit high-frequency power to the discharge chamber 2 after converting it into a TE mode, which is a basic transmission mode of a square waveguide, to thereby generate the plasma between the exhaust-side ridge electrode 21a and the substrate-side ridge electrode 21b; a uniform-heating thermoregulator 40 which is arranged on an outer surface side of the substrate-side ridge electrode 21b and uniformly raises temperature; and a heat-absorbing thermoregulation unit 50 which is arranged on an outer surface side of the exhaust-side ridge electrode 21a and controls the heat flux in the substrate thickness direction of a substrate S to be subjected to plasma processing. The substrate S is placed between the exhaust-side ridge electrode 21a and the substrate-side ridge electrode 21b before plasma processing is performed.
摘要翻译：要解决的问题：提供一种能够通过抑制脊电极和基板的热变形来对大基板进行稳定的成膜处理的真空处理装置。解决方案：真空处理装置包括：排出室2，其包括具有排气侧脊电极21a的脊波导和用于产生等离子体的基板侧脊电极21b; 一对转换器，其将高频功率转换为作为方波导的基本传输模式的TE模式后，将高频电力传输到放电室2，从而在排气侧脊电极21a和衬底之间产生等离子体边缘脊电极21b; 均匀加热调温器40，其布置在基板侧脊电极21b的外表面侧并均匀地升高温度; 以及设置在排气侧脊电极21a的外表面侧的吸热体温调节单元50，控制要进行等离子体处理的基板S的基板厚度方向的热通量。在进行等离子体处理之前，将基板S配置在排气侧脊电极21a和基板侧脊电极21b之间。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011233844A Vacuum processing device 有权
标题翻译：真空加工装置
公开(公告)号：JP2011233844A
公开(公告)日：2011-11-17
申请号：JP2010105673
申请日：2010-04-30
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： WATANABE HIROYUKI , OTSUBO EIICHIRO , MIYAZONO NAOYUKI
IPC分类号： H01L21/31 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing device that improves reliability and durability thereof by preventing or suppressing the generation of a reflection wave from a high-frequency power flowing through a high-frequency power supply transmission line connected to a discharge electrode with a simple and inexpensive configuration.SOLUTION: A membrane production device (a vacuum processing device) comprises a membrane production room (a vacuum processing room); a discharge electrode 6 arranged inside the membrane production room; a high-frequency power source and a matching box 10a arranged outside the membrane production room; and a high-frequency power supply transmission line 9a extended from an end portion of the discharging electrode 6 straight to the matching box 10a penetrating through a wall body 2b of the membrane production room. The high-frequency power supply transmission line 9a is extended from the end portion of the discharge electrode 6 straight along the direction of the heat expansion of the discharge electrode 6. A penetration holding structure 53, provided at a portion where the high-frequency power supply transmission line 9a penetrates the wall body 2b of the membrane production room, allows the movement of the high-frequency power supply transmission line 9a in the direction of a transmission axis while keeping the airtightness between the wall body 2b and the high-frequency power supply transmission line 9a.
摘要翻译：解决的问题：提供一种真空处理装置，其通过防止或抑制流过连接到放电的高频电源传输线的高频电力产生反射波，从而提高其可靠性和耐久性电极具有简单和便宜的配置。解决方案：膜生产装置（真空处理装置）包括膜生产室（真空处理室）; 布置在膜制造室内的放电电极6; 设置在膜制造室外部的高频电源和匹配盒10a; 以及从放电电极6的端部直接延伸到穿过膜制造室的壁体2b的匹配盒10a的高频电力传输线9a。高频电源传输线9a从放电电极6的端部沿着放电电极6的热膨胀方向直线延伸。穿透保持结构53设置在高频电源供给传输线9a穿过膜制造室的壁体2b，允许高频电源传输线9a沿着透射轴的方向移动，同时保持壁体2b和高频电源之间的气密性供给传输线9a。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011034998A Vacuum processing equipment 有权
标题翻译：真空加工设备
公开(公告)号：JP2011034998A
公开(公告)日：2011-02-17
申请号：JP2009176833
申请日：2009-07-29
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： IYOMASA ATSUHIRO , KAWAMURA KEISUKE , TAKEUCHI YOSHIAKI , MIYAZONO NAOYUKI , OTSUBO EIICHIRO
IPC分类号： H01L21/205 , C23C16/509 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide vacuum processing equipment capable of keeping stable electric connection even if a relative position is displaced between a co-axial tube external conductor and a deposition preventing plate due to a thermal expansion difference. SOLUTION: The vacuum processing equipment includes a co-axial shield 12S which is grounded and covers the circumference of a core wire 14a for supplying power to a discharge electrode 3 thermally extendable in a longitudinal direction, a substrate table 2 for supporting a substrate 8 while opposing the discharge electrode 3, the deposition preventing plate 4 which is extendable in a direction along the surface of the substrate table 2 and also in a direction to cross the longitudinal direction of the discharge electrode 3 so as to cover the circumference of the discharge electrode 3 and the substrate 8 together with the substrate table 2, and a coaxial shield side connection part which is attached at least to the coaxial shield 12S, is relatively movable in the thermal extending direction of the discharge electrode 3 with respect to the deposition preventing plate 4 and also in the thermal extending direction of the deposition preventing plate 4, and electrically connects the coaxial shield 12S to the deposition preventing plate 4. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：即使由于热膨胀差异，在同轴管外部导体和防沉积板之间相对位置偏移，也能提供能够保持稳定的电连接的真空处理设备。解决方案：真空处理设备包括同轴屏蔽12S，该同轴屏蔽12S接地并覆盖用于向纵向方向热延伸的放电电极3供电的芯线14a的周边;基板台2，用于支撑基板8，同时与放电电极3相对，防沉积板4可沿着基板台2的表面方向延伸，并且在与放电电极3的纵向方向交叉的方向上可以覆盖圆周放电电极3和基板8与基板台2以及至少与同轴屏蔽12S相连接的同轴屏蔽侧连接部相对于放电电极3的热延伸方向可相对移动防沉积板4以及防沉积板4的热延伸方向，并且电连接同心电 l屏蔽12S到防沉积板4.版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2007231400A Vacuum treatment system and venting method 有权
标题翻译：真空处理系统和通风方法
公开(公告)号：JP2007231400A
公开(公告)日：2007-09-13
申请号：JP2006057442
申请日：2006-03-03
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MIYAZONO NAOYUKI , OTSUBO EIICHIRO , FUJIYAMA TAIZO , SASAGAWA EISHIRO
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment system which does not cause warping or cracking in a substrate when treating the substrate in an unloading chamber, and to provide a venting method.
SOLUTION: The vacuum treatment system comprises: a vacuum treatment chamber for treating a substrate in a decompressed environment and a high-temperature condition; the unloading chamber for receiving the substrate which has been treated in the vacuum treatment chamber, in the decompressed environment, cooling the substrate while returning it under atmospheric pressure, and transporting the substrate to the outside; and a refrigerant-discharging unit for discharging a refrigerant into the unloading chamber. The refrigerant-discharging unit spouts the refrigerant to the substrate of the unloaded chamber from the both sides of a front surface and a back surface. The refrigerant is spouted to different positions within the substrate between the front surface and the back surface.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在卸载室中处理基板时不会引起基板翘曲或开裂的真空处理系统，并提供排气方法。解决方案：真空处理系统包括：用于在减压环境和高温条件下处理基板的真空处理室; 卸载室，用于接收在真空处理室中处理的基板，在减压环境中，在大气压下返回时冷却基板，并将基板输送到外部; 以及用于将制冷剂排出到所述卸载室中的制冷剂排出单元。制冷剂排出单元从前表面和后表面的两侧将制冷剂喷射到卸载室的基板。制冷剂被喷射到前表面和后表面之间的衬底内的不同位置。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006264799A Vacuum treatment device, and treatment chamber extension method 有权
标题翻译：真空处理装置和处理室扩展方法
公开(公告)号：JP2006264799A
公开(公告)日：2006-10-05
申请号：JP2005081221
申请日：2005-03-22
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MIYAZONO NAOYUKI , OTSUBO EIICHIRO , FUJIYAMA TAIZO , SASAGAWA EISHIRO
IPC分类号： B65G49/06 , C23C14/50 , C23C16/44 , H01L21/677 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To save space in a place where a vacuum treatment device is installed. SOLUTION: This vacuum treatment device 1 is provided with a carrying chamber 2, a plurality of treatment chambers 3-1 to 3-6 connected to the carrying chamber 2 to support a substrate, inclined, to be vacuum-treated, and a substrate carrying device 6 movable in the carrying chamber 2. In the substrate carrying device, the substrate is supported, inclined, to be carried from one treatment chamber of a plurality of the treatment chambers 3-1 to 3-6 into the carrying chamber 2, and supported to be carried from the carrying chamber 2 into the other treatment chamber of the plurality of the treatment chambers 3-1 to 3-6. The plurality of the treatment chambers 3-1 to 3-6 are formed of a plurality of right side treatment chambers 3-1 to 3-3, and a plurality of left side treatment chambers 3-4 to 3-6 respectively disposed on the opposite side of the right side treatment chambers 3-1 to 3-3 over the carrying chamber 2. The vacuum treatment device 1 can be installed in a narrower place than a cluster type arrangement of the plurality of the treatment chambers 3-1 to 3-6. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了节省安装真空处理装置的地方的空间。解决方案：该真空处理装置1设有承载室2，多个处理室3-1至3-6，其连接到承载室2以支撑要被真空处理的倾斜的基板，以及可在承载室2中移动的基板承载装置6.在基板承载装置中，基板被支撑，倾斜，以从多个处理室3-1至3-6的一个处理室运送到承载室并且被支撑从承载室2运送到多个处理室3-1至3-6中的另一个处理室中。多个处理室3-1〜3-6由多个右侧处理室3-1〜3-3形成，分别配置在多个处理室3-1〜3-6中的多个左侧处理室3-4〜3-6 右侧处理室3-1至3-3的相对侧在输送室2上。真空处理装置1可以安装在比多个处理室3-1至3的簇型布置更窄的位置 -6。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004152961A System, method and program for controlling transfer 审中-公开
公开(公告)号：JP2004152961A
公开(公告)日：2004-05-27
申请号：JP2002315872
申请日：2002-10-30
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： FUJIYAMA TAIZO , SASAGAWA EISHIRO , MIYAZONO NAOYUKI , UENO MOICHI , IMAMURA MORIHIRO
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide transfer control system/method/program with which processing time efficiency of a substrate transfer control system is improved, and maintenance efficiency of an operation program is improved by center-managing a transfer control system and a film formation control system.
SOLUTION: A transfer command PC1 writes position information on a plurality of transfer trucks 2 to 5 transferring substrates to a plurality of film forming rooms C1 to C8 in star shape arrangement, substrate information showing states of the substrates that the transfer trucks 2 to 5 hold and film formation processing status information in the film forming rooms C1 to C8. Position information, substrate information and film formation processing status information are periodically read and they are judged to be matched with a transfer condition which is previously prescribed. A transfer operation mode where a transfer route of the transfer trucks 2 to 5 which the transfer condition designates is previously prescribed is read, and the transfer trucks 2 to 5 are controlled.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2003073839A Substrate holder for evaluating film, and method for evaluating film 审中-公开
标题翻译：用于评估膜的基板保持器，以及评估膜的方法
公开(公告)号：JP2003073839A
公开(公告)日：2003-03-12
申请号：JP2001256686
申请日：2001-08-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , MIYAZONO NAOYUKI , UENO MOICHI
IPC分类号： C23C16/52 , H01L21/66 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a substrate holder for evaluating a film, which can evaluate the defect density in a formed film on a large-scale substrate containing a sodium content, such as soda glass, and provide a method for evaluating film.
SOLUTION: The substrate holder has several portions 2 for mounting substrates on a metallic plate body 1, and inlays quartz substrates 2a as non- alkali substrates in them. The quartz substrates 2a are fixed with fixing members 3 and 4, which are installed on the both sides of the plate body 1, and are made to be removable. The corners of each fixing member 3 provided on the surface side to be film formed are chamfered, and each fixing member 4 installed on the opposite side is composed of thin SUS foils, or the like. The plate body 1 comprises slits formed on the edge to prevent the camber of it.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于评价膜的基板保持器，其可以评估包含钠含量的大规模基板如苏打玻璃上的成形膜中的缺陷密度，并提供一种评价膜的方法。解决方案：基板保持器具有用于将基板安装在金属板体1上的多个部分2，并且将石英基板2a作为非碱基板嵌入其中。石英基板2a固定有安装在板体1两侧的固定件3和4，并被制成可拆卸的。设置在要成膜的表面侧的每个固定构件3的角部被倒角，并且安装在相对侧上的每个固定构件4由薄的SUS箔等组成。板体1包括形成在边缘上的狭缝，以防止其外倾。

8. 发明专利

JP2012036451A Vacuum processing apparatus and plasma processing method 有权
标题翻译：真空加工设备和等离子体处理方法
公开(公告)号：JP2012036451A
公开(公告)日：2012-02-23
申请号：JP2010178194
申请日：2010-08-06
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： NAKAO TEIKO , SASAGAWA EISHIRO , TAKEUCHI YOSHIAKI , MIYAZONO NAOYUKI , OTSUBO EIICHIRO
IPC分类号： C23C16/509 , H01L21/205 , H01L31/04 , H05H1/46
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable plasma-processing even for a large substrate by suppressing thermal deformation of a ridge electrode and the substrate.SOLUTION: The vacuum processing apparatus includes: an electrical discharge chamber 2 as a ridge waveguide having ridge electrodes 21a, 21b that are formed in a flat plate shape and arranged parallel and opposite to each other while plasma is generated therebetween; a pair of converters which consist of ridge waveguides that have a pair of ridge parts provided on both ends adjacent thereto and arranged opposite to each other, convert the high frequency power into TE mode, transmit the power to the electrical discharge chamber 2, and generate plasma between the ridge electrodes 21a, 21b; a uniformly heating temperature controller 11 which is installed parallel to the ridge electrode 21b with a space outside the ridge electrode, and uniformly raises the temperature of a substrate S after a substrate S to be plasma-processed is set; and a heat-absorbing temperature control unit 12 which is installed outside the ridge electrode 21a to control the heat flux passing through the sheet thickness direction of the ridge electrode 21a and the substrate S to be plasma-processed.
摘要翻译：解决的问题：提供一种能够通过抑制脊电极和基板的热变形而能够对大基板进行稳定的等离子体处理的真空处理装置。解决方案：真空处理设备包括：作为脊波导的放电室2，其具有平板状形成并且彼此平行并相对布置的等离子体的脊电极21a，21b; 一对转换器由脊形波导组成，脊脊部分设置在与其相邻的两端彼此相对设置的脊部分，将高频功率转换成TE模式，将功率传输到放电室2，并产生脊电极21a，21b之间的等离子体; 均匀加热温度控制器11，其平行于棱脊电极21b平行设置，在脊电极之外具有空间，并且在设置待等离子体处理的基板S之后均匀地升高基板S的温度; 以及吸收温度控制单元12，其设置在脊电极21a的外侧，以控制通过脊电极21a的板厚方向的热通量和待等离子体处理的基板S. 版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008218663A Operating method of vacuum treatment device and vacuum treatment device 审中-公开
标题翻译：真空处理装置的操作方法和真空处理装置
公开(公告)号：JP2008218663A
公开(公告)日：2008-09-18
申请号：JP2007053241
申请日：2007-03-02
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OTSUBO EIICHIRO , MIYAZONO NAOYUKI , SASAGAWA EISHIRO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide the operating method of a vacuum treatment device and the vacuum treatment device prominent in economical property while employing assist gas for treatment of exhaust gas.
SOLUTION: In the operating method of a plasma CVD (chemical vapor deposition) device (vacuum treatment device) 1, equipped with a film making chamber 3, a dry pump (vacuum pump) 14 interposed in an exhaust gas flow passage 10 for the film making chamber 3 to evacuate the film making chamber 3, an assist gas flow passage 25 for mixing assist gas into the exhaust gas flow passage 10, an assist gas flow regulating means for regulating the flow of the assist gas and a control device 30, the control device 30 controls the assist gas flow regulating means in accordance with the exhaust flow amount of hydrogen gas exhausted from the film making chamber 3 whereby the assist gas can be made to flow.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种真空处理装置的操作方法和在经济性方面突出的真空处理装置，同时使用辅助气体处理废气。解决方案：在具有制膜室3的等离子体CVD（化学气相沉积）装置（真空处理装置）1的操作方法中，插入排气流路10中的干式泵（真空泵）14 对于制膜室3抽出制膜室3，辅助气体流动通道25用于将辅助气体混入废气流动通道10中，辅助气体流量调节装置用于调节辅助气体的流动和控制装置如图30所示，控制装置30根据从成膜室3排出的氢气的排出量来控制辅助气体流量调节装置，由此能够使辅助气体流动。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2006156830A Deposition apparatus and its manufacturing method 有权
标题翻译：沉积装置及其制造方法
公开(公告)号：JP2006156830A
公开(公告)日：2006-06-15
申请号：JP2004347352
申请日：2004-11-30
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OTSUBO EIICHIRO , MIYAZONO NAOYUKI , SASAGAWA EISHIRO , UENO MOICHI , MORI TADASHI
IPC分类号： H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a substrate heating apparatus which can make whole substrate surface into uniform temperature of a short time in any of temperature rising and temperature falling cases and to provide a deposition apparatus. SOLUTION: The deposition apparatus 1 includes a soaking board 11 and a substrate installation board 2. The soaking board 11 is provided in a film forming room 5 which forms the film to the substrate 6 and has a passage directly in an interior. The substrate installation board 2 is brought into close contact to the soaking board 11. The soaking board 11 is controlled at temperature by a heating medium which flows the passage. Another side of the substrate installation board 2 is brought into close contact with the substrate 6 at the time of forming the film. It has a plurality of the passages, and the plurality of the passage are not crossed mutually desirably. The passage is desirable that the heating medium may flow from the peripheral side of the soaking board 11 to a center side. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够使整个基板表面在任何升温和降温情况下都能够在短时间内形成均匀温度的基板加热装置，并提供沉积装置。解决方案：沉积设备1包括均热板11和基板安装板2.均热板11设置在成膜室5中，该成膜室将膜形成在基板6上，并且在内部直接通过。基板安装板2与均热板11紧密接触。浸泡板11由流动通道的加热介质控制在温度。在形成膜时，基板安装板2的另一侧与基板6紧密接触。它具有多个通道，并且多个通道相互不期望地交叉。该通道是希望的是，加热介质可以从均热板11的周边侧向中心侧流动。版权所有（C）2006，JPO＆NCIPI

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