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1. 发明专利

JP2011159822A Photovoltaic power generator and method of manufacturing the same 有权
标题翻译：光伏发电机及其制造方法
公开(公告)号：JP2011159822A
公开(公告)日：2011-08-18
申请号：JP2010020581
申请日：2010-02-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKENAKA MICHIAKI , OMORI NOBUHIKO , HIBI TAKETOSHI
IPC分类号： H01L31/042 , H01L31/052
CPC分类号： Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic power generator such that a light condensing portion which condenses light on a photoelectric converting portion is reduced in vertical length, and to provide a method of manufacturing the photovoltaic power generator.
SOLUTION: The photovoltaic power generator includes: the photoelectric converting portion 11 which extends linearly; and the light condensing portion 30 which extends in a columnar shape so as to condense light on the photoelectric converting portion 11. The light condensing portion 30 has: an upper surface 31 which receives light and allows the light to pass; a first side surface 32 which extends obliquely from an edge of the upper surface 31 so as to includes the upper surface 31 when being seen through from above, and reflects light passing through the upper surface 31; a second side surface 33 which faces the first side surface 32 and also extends obliquely along the first side surface 32, and reflects light reflected by the first side surface 32; and a lower surface 34 which faces the photoelectric converting portion 11 and allows light reflected by the second side surface 33 to pass so as to guide the light to the photoelectric converting portion 11; wherein the first side surface 32 has a portion curved so as to condense light on the photoelectric converting portion 11 through the second side surface 33.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种光伏发电机，使得将光聚光在光电转换部上的聚光部分的垂直长度减小，并提供一种制造光伏发电机的方法。解决方案：光伏发电机包括：线性延伸的光电转换部分11; 以及聚光部30，其以柱状形状延伸，以便将光聚光在光电转换部分11上。聚光部分30具有：上表面31，其接收光并允许光通过; 第一侧表面32，从上表面31的边缘倾斜延伸，以便从上方观察时包括上表面31，并且反射通过上表面31的光; 面向第一侧面32的第二侧面33也沿着第一侧面32倾斜地延伸，并且反射由第一侧面32反射的光; 以及与光电转换部11相对并允许由第二侧面33反射的光通过以将光引导到光电转换部11的下表面34; 其中第一侧表面32具有弯曲的部分，以便通过第二侧表面33使光在光电转换部分11上聚光。版权所有：（C）2011，JPO＆INPIT

2. 发明专利

JP2011066443A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011066443A
公开(公告)日：2011-03-31
申请号：JP2010263443
申请日：2010-11-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKENO YOSHIMIZU , NAKAJIMA MASARU , OMORI NOBUHIKO , MATSUMURA TAMIO
IPC分类号： H01L21/265 , H01L21/336 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide technique capable of improving performance of a semiconductor device.
SOLUTION: A first impurity is introduced into a semiconductor substrate from its back side. Thereafter, the semiconductor substrate is irradiated with laser light to activate the first impurity. Then a second impurity is introduced into the semiconductor substrate from the back side, the second impurity being shallower than the first impurity. Thereafter, the semiconductor substrate is irradiated with laser light to activate the second impurity.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高半导体器件的性能的技术。解决方案：从其背面将第一杂质引入半导体衬底。此后，用激光照射半导体衬底以激活第一杂质。然后从背面将第二杂质引入半导体衬底，第二杂质比第一杂质浅。此后，用激光照射半导体衬底以激活第二杂质。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010219311A Semiconductor device and semiconductor module 审中-公开
标题翻译：半导体器件和半导体器件
公开(公告)号：JP2010219311A
公开(公告)日：2010-09-30
申请号：JP2009064474
申请日：2009-03-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA YASUSHI , OMORI NOBUHIKO
IPC分类号： H01L29/78 , H01L29/06 , H01L29/41 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To make a semiconductor device compact since the shape and interval of guard rings do not depend upon a shrink rate. SOLUTION: The present invention relates to a vertical type semiconductor device, including a semiconductor substrate 1 having a front surface and a back surface arranged opposite each other and a side surface between the front surface and back surface, an active region 2 provided on the front surface side of the semiconductor substrate 1, the endless guard rings 3 provided surrounding the active region 2, a surface electrode 4 provided on the active region 2 of the semiconductor substrate 1, and a back electrode 5 provided on the back surface side of the semiconductor substrate 1, wherein a voltage is applied between the surface electrode 4 and back electrode 5, and a conductive region is provided along the side surface of the semiconductor substrate 1. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了使半导体器件紧凑，因为保护环的形状和间隔不依赖于收缩率。解决方案：本发明涉及一种垂直型半导体器件，包括具有彼此相对布置的正面和背面以及前表面和背面之间的侧表面的半导体衬底1，所述有源区2设置在半导体基板1的表面侧，设置在有源区域2周围的环形保护环3，设置在半导体基板1的有源区域2上的表面电极4和设置在半导体基板1的背面侧的背面电极5 其中在表面电极4和背面电极5之间施加电压，沿着半导体衬底1的侧表面设置导电区域。（C）2010，JPO＆INPIT

4. 发明专利

JP2012114211A Wet etching apparatus 审中-公开
标题翻译：湿蚀刻装置
公开(公告)号：JP2012114211A
公开(公告)日：2012-06-14
申请号：JP2010261342
申请日：2010-11-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKENAKA MICHIAKI , OMORI NOBUHIKO
IPC分类号： H01L21/306 , H01L21/308 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus which prevents air bubbles departing from a semiconductor substrate (a solar cell) from adhering to the semiconductor substrate again and causing non-uniform etching and shape defects.SOLUTION: A wet etching apparatus includes: an etching bath 5 accumulating an etching solution 4 in which a solar cell 2 is immersed; a circulation water passage system 20A which recovers the etching solution 4 on an upper layer of the etching bath 5 and ejects the recovered etching solution 4 from a bottom part of the etching bath 5 to circulate the etching solution 4 in the etching bath 5; and an air bubble capturing collector 1A which is immersed between the solar cell 2 and a liquid surface of the etching solution 4 in the etching bath 5 to capture and collect air bubbles 7 generated from the solar cell 2 and floating in the etching bath 5.
摘要翻译：要解决的问题：提供一种防止从半导体衬底（太阳能电池）离开的气泡再次粘附到半导体衬底并导致不均匀蚀刻和形状缺陷的蚀刻装置。湿式蚀刻装置包括：沉积有太阳能电池2的蚀刻液4的蚀刻槽5; 循环水通道系统20A，其在蚀刻槽5的上层上回收蚀刻液4，并从蚀刻槽5的底部排出回收的蚀刻液4，使腐蚀液4在蚀刻槽5中循环; 以及在蚀刻槽5中浸渍在太阳能电池2和蚀刻溶液4的液面之间的气泡捕集用集电体1A，以捕获并收集从太阳能电池2产生的浮子7并漂浮在蚀刻槽5中的气泡。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2007059431A Process for fabricating semiconductor device and laser processing system 审中-公开
标题翻译：制造半导体器件和激光加工系统的工艺
公开(公告)号：JP2007059431A
公开(公告)日：2007-03-08
申请号：JP2005239447
申请日：2005-08-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKENO YOSHIMIZU , NAKAJIMA MASARU , OMORI NOBUHIKO , MATSUMURA TAMIO
IPC分类号： H01L21/265 , H01L21/268 , H01S3/00
摘要： PROBLEM TO BE SOLVED: To provide a technology capable of enhancing the performance of a semiconductor device. SOLUTION: N-type impurities such a phosphorus or p-type impurities such as boron are introduced into a semiconductor substrate, i.e. a wafer 25. The wafer 25 is then irradiated with an incident laser beam 6 from the back 25a side thus activating the impurities in the wafer 25. The incident laser beam 6 consists of a plurality of pulse laser beams 1 and 2 superimposed while shifting the irradiation timing for the wafer 25. When the impurities are activated using such an incident laser beam 6, the wafer 25 can be irradiated with the laser beam for a long time while suppressing fusion of the wafer 25. As a result, performance of a semiconductor device is enhanced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高半导体器件的性能的技术。解决方案：诸如硼的磷或p型杂质的N型杂质被引入到半导体衬底（即晶片25）中。然后用后面的25a侧的入射激光束6照射晶片25，从而激活晶片25中的杂质。入射激光束6由多个脉冲激光束1和2组成，同时移位晶片25的照射定时。当使用这种入射激光束6激活杂质时，晶片 25可以用激光束长时间照射，同时抑制晶片25的熔化。结果，提高了半导体器件的性能。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2015012083A トレイホルダおよびトレイキャリア有权
标题翻译：托盘托盘和托盘托盘
公开(公告)号：JP2015012083A
公开(公告)日：2015-01-19
申请号：JP2013135297
申请日：2013-06-27
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： OMORI NOBUHIKO , ONO AKIHITO , OCHI JUNJI , HAMANO KENICHI
IPC分类号： H01L21/673 , B65D85/86
摘要：【課題】トレイキャリアにトレイを載置する際、またはトレイキャリアからトレイを取り出す際におけるトレイの擦れを低コストで防止し、かつ、作業性を向上させることが可能な技術を提供することを目的とする。【解決手段】トレイホルダ1は、上下方向および前方向が開放された開口部2と、開口部2の内周縁部の少なくとも左右においてトレイホルダ1の上面よりも低くなるように形成されかつトレイ10を載置するための段部3とを備え、段部3の底面からトレイホルダ1の上面までの長さは、トレイ10の厚みよりも大きくなるように形成されている。さらにトレイホルダ1は、その複数個を、それぞれ上下方向にスペーサを介して積み重ね可能である。【選択図】図1
摘要翻译：要解决的问题：提供一种防止托盘摩擦的技术，当将托盘安装在托盘托架上或当从托盘托架托架托架托架时，以低成本安装托盘，同时提高加工性。解决方案：托盘托架1包括孔 2，其沿垂直方向和前方向开口;以及步骤3，其至少在孔2的内周边缘的右侧和左侧形成在托盘保持器1的上表面下方，并且托盘10安装在该台阶3上。从台阶3的底面到托盘保持架1的上表面的长度被设定为大于托盘10的厚度。多个托盘保持器可以在垂直方向上层叠，间隔开。

7. 发明专利

JP2012236385A Resin molding device and method of cleaning resin molding mold 审中-公开
标题翻译：树脂模制装置和清洁树脂模制模具的方法
公开(公告)号：JP2012236385A
公开(公告)日：2012-12-06
申请号：JP2011108351
申请日：2011-05-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOMORI HIDEKI , OMORI NOBUHIKO , NAKAJIMA YASUSHI , KASHIBA YOSHIHIRO
IPC分类号： B29C33/72
摘要： PROBLEM TO BE SOLVED: To provide a resin molding device that resin-seals and molds electronic components, such as a semiconductor chip and IC, by using a resin; and to provide a method of cleaning a resin molding mold, which can efficiently remove a resin residue attached to a sealing mold and a molding mold.SOLUTION: In the resin molding device, a molten resin is injected into a cavity 5 formed in the resin molding mold to carry out resin molding. The resin molding device includes: an ozone gas-introducing path leading to the cavity 5; and an ozone generator connected to the ozone gas-introducing path.
摘要翻译：要解决的问题：提供一种通过使用树脂来树脂密封和模制诸如半导体芯片和IC的电子部件的树脂模制装置; 并且提供一种清洁可以有效地除去附着在密封模具和模制品上的树脂残渣的树脂模塑模具的方法。解决方案：在树脂模制装置中，将熔融树脂注入到形成在树脂模塑模具中的模腔5中以进行树脂模制。树脂成型装置包括：通向空腔5的臭氧气体导入路径; 和与臭氧气体导入路径连接的臭氧发生器。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JPH06244152A MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06244152A
公开(公告)日：1994-09-02
申请号：JP3074393
申请日：1993-02-19
申请人： SUMITOMO METAL IND , MITSUBISHI ELECTRIC CORP
发明人： HOSOKI AKIHITO , MIYATAKE HIROSHI , YONEDA MASAHIRO , MATSUO HIROSHI , OMORI NOBUHIKO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/78
摘要： PURPOSE:To highly selectively etch an SiO2 film against an SiN film by performing the etching by generating plasma from a fluorocarbon gas composed of one or two or more kinds of gases or a gas prepared by adding carbon or oxide to the fluorocarbon gas. CONSTITUTION:A sample 25a is prepared by partially forming a photoresist 32 on the upper surface of an SiO2 film 33 on an Si substrate 30 and another sample 25b is prepared by partially forming a photoresist 32 on the upper surface of an SiN film 31 on an Si substrate 30. The etching gas of the film 33 is composed of CF4 and the flow rate and pressure of the gas are respectively set at 40sccm and 1mTorr. In addition, the etching speed ratio of the film 33 against the photoresist 32 is set at about 6. When the F/C ratio of the etching gas is 3, the etching speed ratio of the SiO2 film 33 against the SiN film 31 is small, but, when the F/C ratio is 3, the selecting ratio can be increased to 4-15, since the etching speed of the film 33 can be increased to 300-450nm/min and that of the film 31 can be suppressed to 70-30nm/min.

9. 发明专利

JPH01219163A MANUFACTURE OF FLEXIBLE MIRROR 失效
公开(公告)号：JPH01219163A
公开(公告)日：1989-09-01
申请号：JP4411888
申请日：1988-02-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO YOICHI , OMORI NOBUHIKO , OMINE MEGUMI
IPC分类号： G21K1/06 , C23C14/32 , G02B5/08
摘要： PURPOSE:To make the roughness of a film surface precise, to increase the sticking power and to obtain the flexible mirror having the optical characteristic of a luminous intensity by individually controlling the current density, accelerating voltage, film forming speed and board temp. of a cluster ion and the vacuum inside a container. CONSTITUTION:A vacuum container 9 inside is evacuated to the high vacuum of >=1X10 Torr. The vapor deposition material 1 of the crucible 4 inside is evaporated by heating it by a heating heater 5 to form a cluster by its expan sion with heat insulation. One part of the cluster is ionized by the electron shower generated from an electron radiation source 7 and reached onto a board by giving and acceleration energy from an acceleration electrode 8. In this case, the current density of the cluster ion is set to 0-10muA/cm , the accelera tion voltage 3-5KV, the film forming speed 1-50nm/min and the board temp.

10. 发明专利

JPH02148675A COMPACT HEATING MEMBER 失效
公开(公告)号：JPH02148675A
公开(公告)日：1990-06-07
申请号：JP30444088
申请日：1988-11-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO YOICHI , OMORI NOBUHIKO
IPC分类号： B41J2/335 , H01C7/00 , H05B3/12 , H05B3/16 , H05B3/20
摘要： PURPOSE:To use a compact heating member at high temperature range and improve response thereof by laminating a ceramic intermediate layer and a heat generating resistant layer made of tungsten on a monocrystal alumina substrate in order and installing the laminated member into a vacuum container to heat the member therein. CONSTITUTION:A ceramic intermediate layer 5 and a heat generating resistant layer 1 made of tungsten is laminated on a monocrystal alumina substrate 2 in order. The laminated member is installed into a vacuum container 7 to energize the member therein. Accordingly, there is no degradation of tungsten membrane of the heat generating resistant layer 1 due to such as oxidation. This provides a compact heating member with faster response. Adhesion of the heating member is improved by providing the ceramic intermediate layer 5 to obtain a strengthened heating member.

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