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1. 发明专利

JP2007242962A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007242962A
公开(公告)日：2007-09-20
申请号：JP2006064505
申请日：2006-03-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MATSUNAGA TOSHIHIRO , KAMIGAI YASUMI , KOBAYASHI TOSHIO , KASHIBA YOSHIHIRO , KICHISE KOJI , SHIODA HIRONORI
IPC分类号： H01L21/52
CPC分类号： H01L24/33 , H01L2224/73253 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To eliminate displacement among electrodes and semiconductor elements and to provide a stable contact resistance to the elements having various heights. SOLUTION: A sealed semiconductor element 11 and a case 4 for housing it are provided to the semiconductor device. The element 11 comprises a plurality of semiconductor elements 1 with a main electrode 5 and an electrode body 2 or a wiring pattern, respectively arranged and contacted or conjugated in parallel on the surface and the rear surface, and a sealing insulating body 3 having an elasticity for sealing it. The case 4 for housing the sealed semiconductor device, used for a pressure applying means, applies pressure to the element 11 to depress the electrode body 2 or the wiring pattern and the main electrode 5 to the elements 1. The present invention can substantially reduce thermal deformation due to changes in the temperature, a vibration in use, displacement of the electrode by an impact load, to suppress damages to the semiconductor element, which can evenly provide a stable contact resistance with respect to a large number of elements. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了消除电极和半导体元件之间的位移并且为具有各种高度的元件提供稳定的接触电阻。解决方案：将密封的半导体元件11和用于容纳半导体元件的壳体4设置到半导体器件。元件11包括多个半导体元件1，其具有分别在表面和后表面上平行布置和接触或共轭的主电极5和电极体2或布线图案，以及具有弹性的密封绝缘体3 用于密封。用于容纳用于加压装置的密封半导体器件的壳体4向元件11施加压力，以将电极体2或布线图案和主电极5按压到元件1.本发明可以显着降低热量由于温度的变化引起的变形，使用中的振动，冲击载荷下的电极位移，以抑制对半导体元件的损伤，这可以相对于大量元件均匀地提供稳定的接触电阻。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005197563A Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：JP2005197563A
公开(公告)日：2005-07-21
申请号：JP2004003914
申请日：2004-01-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIKUCHI MASAO , KASHIBA YOSHIHIRO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/40 , H01L2224/83801 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of uniformly and securely bringing electrodes of a semiconductor element and electrodes of a circuit block for controlling the semiconductor element into contact. SOLUTION: The power semiconductor device includes the semiconductor element having a plurality of the electrodes and the circuit block having a plurality of the electrodes for controlling the semiconductor element, both being sealed with a molding resin. The electrodes of the semiconductor element and the electrodes of the circuit block are electrically connected by permitting them to make contact with a connection member put between the semiconductor element and the circuit block. The connection member includes a plate-shaped elastic base member and a conductive member provided on opposite surfaces of the elastic base member and connected with each other through a via hole. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供能够均匀且可靠地将半导体元件的电极和用于控制半导体元件的电路块的电极接触的功率半导体器件。解决方案：功率半导体器件包括具有多个电极的半导体元件，并且具有用于控制半导体元件的多个电极的电路块都用模制树脂密封。半导体元件的电极和电路块的电极通过允许它们与放置在半导体元件和电路块之间的连接构件接触而电连接。连接构件包括板状弹性基座构件和设置在弹性基底构件的相对表面上并通过通孔相互连接的导电构件。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2003068810A Removing member for foreign matter stuck to probe tip, manufacturing method therefor, method for cleaning foreign matter stuck to probe tip, probe and probing device 有权
标题翻译：移除用于外部事件的组件用于探头提示，其制造方法，用于清除外部事件以检测提示，探测和探测设备的方法
公开(公告)号：JP2003068810A
公开(公告)日：2003-03-07
申请号：JP2002073835
申请日：2002-03-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEKAWA SHIGEKI , TAKEMOTO MEGUMI , KASHIBA YOSHIHIRO
IPC分类号： G01R31/26 , B08B1/00 , G01R1/06 , G01R1/067 , G01R3/00 , H01L21/66
CPC分类号： B08B1/00 , G01R1/06738 , G01R3/00
摘要： PROBLEM TO BE SOLVED: To provide the removing member of foreign matters stuck to a probe tip, which prevents the probe tip from being shaved and from becoming thin and whose life can be prolonged.
SOLUTION: The removing member of foreign matters stuck to the probe tip is provided with a base plate 3, a first elastic member 4a formed on the base plate 3, a second elastic member 4b formed on the first elastic member 4a and a polishing layer 5 formed on the second elastic member 4b and is constituted of hard grains 5a and a binder material 5b.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供粘附到探针尖端的异物的去除构件，其防止探针尖被剃光并变薄，并且其寿命可以延长。解决方案：粘附在探针尖端的异物去除件设置有基板3，形成在基板3上的第一弹性部件4a，形成在第一弹性部件4a上的第二弹性部件4b和抛光层5 形成在第二弹性部件4b上，由硬质粒子5a和粘合剂材料5b构成。

4. 发明专利

JP2009231672A Power semiconductor apparatus 有权
标题翻译：功率半导体器件
公开(公告)号：JP2009231672A
公开(公告)日：2009-10-08
申请号：JP2008077255
申请日：2008-03-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SANO KO , KASHIBA YOSHIHIRO , ARAI NORIYOSHI
IPC分类号： H01L25/07 , H01L23/473 , H01L25/18
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce a total capacity of power semiconductor apparatus equipped with a cooling section. SOLUTION: A power semiconductor apparatus comprises a power semiconductor device 43, a plurality of power semiconductor modules 13 having a heat-conducting module substrate 41 for transferring the heat generated by the semiconductor device 43 to outside, a heat transfer plate 15 which is fixed in such a manner that it is in contact with the module substrate 41 of the semiconductor module 13, and a heat diffusion plate 16 which diffuses heat from a heat diffusion plane 24 and in which the heat transfer plate 15 is erected on a mounting plane 18 facing against the heat diffusion plane 24 so that heat can be transferred thereto. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：减少配备有冷却部的功率半导体装置的总容量。解决方案：功率半导体装置包括功率半导体器件43，多个功率半导体模块13，其具有用于将由半导体器件43产生的热量传递到外部的导热模块衬底41，传热板15，以与半导体模块13的模块基板41接触的方式固定，以及热扩散板16，其从热扩散面24扩散热量，并且传热板15竖立在安装件平面18面对热扩散面24，从而可以传热。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012236385A Resin molding device and method of cleaning resin molding mold 审中-公开
标题翻译：树脂模制装置和清洁树脂模制模具的方法
公开(公告)号：JP2012236385A
公开(公告)日：2012-12-06
申请号：JP2011108351
申请日：2011-05-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOMORI HIDEKI , OMORI NOBUHIKO , NAKAJIMA YASUSHI , KASHIBA YOSHIHIRO
IPC分类号： B29C33/72
摘要： PROBLEM TO BE SOLVED: To provide a resin molding device that resin-seals and molds electronic components, such as a semiconductor chip and IC, by using a resin; and to provide a method of cleaning a resin molding mold, which can efficiently remove a resin residue attached to a sealing mold and a molding mold.SOLUTION: In the resin molding device, a molten resin is injected into a cavity 5 formed in the resin molding mold to carry out resin molding. The resin molding device includes: an ozone gas-introducing path leading to the cavity 5; and an ozone generator connected to the ozone gas-introducing path.
摘要翻译：要解决的问题：提供一种通过使用树脂来树脂密封和模制诸如半导体芯片和IC的电子部件的树脂模制装置; 并且提供一种清洁可以有效地除去附着在密封模具和模制品上的树脂残渣的树脂模塑模具的方法。解决方案：在树脂模制装置中，将熔融树脂注入到形成在树脂模塑模具中的模腔5中以进行树脂模制。树脂成型装置包括：通向空腔5的臭氧气体导入路径; 和与臭氧气体导入路径连接的臭氧发生器。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2007280758A Circuit breaker device 有权
标题翻译：断路器设备
公开(公告)号：JP2007280758A
公开(公告)日：2007-10-25
申请号：JP2006105253
申请日：2006-04-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIMURA SUSUMU , HISAOKA YASUSHI , KASHIBA YOSHIHIRO
IPC分类号： H01H37/76
摘要： PROBLEM TO BE SOLVED: To provide a circuit breaker device capable of breaking an electric circuit in a short time and of protecting electric parts when a vehicular abnormal signal is input.
SOLUTION: This is provided with first and second conductive members, a conductive low melting point material to join the first and the second conductive members, at least one support member which has electrical insulation and which supports the first and the second conductive members, and at least one spring material which is installed between the first conductive member or the second conductive member and the support member, and of which the operation is regulated by the first conductive member or the second conductive member and the support member.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在短时间内断开电路并在输入车辆异常信号时保护电气部件的断路器装置。解决方案：设置有第一和第二导电构件，用于连接第一和第二导电构件的导电低熔点材料，至少一个支撑构件，其具有电绝缘并且支撑第一和第二导电构件以及至少一个弹簧材料，其安装在第一导电构件或第二导电构件和支撑构件之间，并且其操作由第一导电构件或第二导电构件和支撑构件调节。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006210946A Method for removing foreign matter adhering to probe tip, and probing apparatus 有权
标题翻译：移除外来物件的方法和探针装置
公开(公告)号：JP2006210946A
公开(公告)日：2006-08-10
申请号：JP2006111236
申请日：2006-04-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEKAWA SHIGEKI , TAKEMOTO MEGUMI , KASHIBA YOSHIHIRO
IPC分类号： H01L21/66 , G01R1/06
摘要： PROBLEM TO BE SOLVED: To obtain a member for removing foreign matters, adhering to a probe tip which prevents the probe tip from thinning by being abraded and prolongs the lifetime of the probe tip. SOLUTION: The member for removing foreign matters adhering to the probe tip is constituted of a base plate 3, a first elastic member 4a formed on the base plate 3, a second elastic member 4b formed on the first elastic member 4a, and an abrasive layer 5 formed on the second elastic member 4b and is constituted of hard particles 5a and a binding material 5b. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得用于除去异物的部件，附着在探针尖端上，该探头尖通过磨损而使探头尖端变薄，并延长了探头的寿命。解决方案：用于除去附着在探针尖端的异物的构件由基板3，形成在基板3上的第一弹性构件4a，形成在第一弹性构件4a上的第二弹性构件4b和形成在第二弹性构件4b上的研磨层5，由硬质粒子5a和粘结材料5b构成。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005252305A Semiconductor device for electric power 审中-公开
标题翻译：电力半导体器件
公开(公告)号：JP2005252305A
公开(公告)日：2005-09-15
申请号：JP2005142408
申请日：2005-05-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： DAITOKU OSAMU , OGA TAKUYA , OKAMURA MASAMITSU , KASHIBA YOSHIHIRO , SONODA ISAO , AKAGI IPPEI , OKUDA TATSUYA
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00
CPC分类号： H01L2224/34 , H01L2224/45124 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/37099 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power using a bonding wire which can obtain required and sufficient electrical performance, and also can be manufactured easily irrespective of the number of parallel semiconductor devices. SOLUTION: The semiconductor device for electric power comprises a first insulating substrate 23 in which a plurality of first semiconductor devices, bonding wires, and electrode patterns 21a, 20a and 22a of a source, a drain and a gate where electric connections of the respective first semiconducor elements are formed by soldering are formed, and a second insulating substrate 23 in which a plurality of second semiconductor devices, bonding wires, and electrode patterns 21b, 20b and 22b of the source, the drain and the gate where eledctric connection of the respective second semiconductor elements are formed by solderijng are formed. Each gate electrode pattern of on the first and second insulating substrate puts together gate wirings of the respective semiconductor devices into one. Electrode patterns of the source and the gate on the first insulating substrate and electrode patterns of the source and the gate on the second insulating substrate are arranged in substantially parallel and at a short distance, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用能够获得所需和足够的电气性能的接合线的电力的半导体器件，并且也可以容易地制造而不考虑并行半导体器件的数量。解决方案：用于电力的半导体器件包括：第一绝缘基板23，其中多个第一半导体器件，接合线以及源极，漏极和栅极的电极图案21a，20a和22a，其中电连接通过焊接形成各自的第一半导体元件;以及第二绝缘基板23，其中多个第二半导体器件，接合线以及源极，漏极和栅极的电极图案21b，20b和22b，其中串联连接通过焊料形成各自的第二半导体元件。第一绝缘基板和第二绝缘基板上的每个栅极电极图案将各个半导体器件的栅极布线组合成一个。第一绝缘基板上的源极和栅极的电极图案以及源极和第二绝缘基板上的栅极的电极图案分别基本上平行且短距离地布置。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004340426A Heat exchanger 有权
公开(公告)号：JP2004340426A
公开(公告)日：2004-12-02
申请号：JP2003135446
申请日：2003-05-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： CHIBA HIROSHI , NAKAO KAZUNARI , KASHIBA YOSHIHIRO
IPC分类号： F28F1/32 , F28D1/053 , F28F1/12
摘要： PROBLEM TO BE SOLVED: To provide a heat exchanger capable of sufficiently improving the heat transfer without increasing pressure loss of fluid on a side provided with fins.
SOLUTION: This heat exchanger 31 is provided with a plurality of heat transfer pipes 1, in which refrigerant flows. A plurality of heat transfer plates 2 are laminated in the axial direction of the heat transfer pipe 1 with a constant space from each other so that a heat transfer surface thereof faces to each other. The heat transfer pipe 1 and the heat transfer plate 2 are bonded to each other by brazing or the like. In this heat exchanger 31, gas flows along the heat transfer surface in each of the clearances between the plurality of heat transfer plates 2 to generate an air flow 11. A wire 21, which is formed into a shape that a plurality of arcs are mutually and continuously provided for extension, namely, a wave shape, is bonded to one of the two heat transfer surfaces of each of the heat transfer plates 2 by wire-bonding.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004022960A Semiconductor device for power 有权
公开(公告)号：JP2004022960A
公开(公告)日：2004-01-22
申请号：JP2002178464
申请日：2002-06-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： DAITOKU OSAMU , OGA TAKUYA , OKAMURA MASAMITSU , KASHIBA YOSHIHIRO , SONODA ISAO , AKAGI IPPEI , OKUDA TATSUYA
IPC分类号： H01L25/07 , H01L23/48 , H01L25/18
CPC分类号： H01L2224/36 , H01L2224/40 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for power which eliminates a fault caused by a bonding wire and in which the number of parts is small and of which manufacture is simple. SOLUTION: In the semiconductor device for power having a paired arm structure consisting of an anode side circuit and a cathode side circuit, a first metal block 1a is connected to the rear surfaces of a plurality of first semiconductor elements, a second metal block 1b is connected to the rear surfaces of a plurality of second semiconductor elements, the front surfaces of the first and the second semiconductor elements are connected to first and second metal blocks via lead frame 13, the first and second semiconductor elements, the first and the second metal blocks and the lead frame are integrally covered with a housing, and the first and the second metal blocks constitute a part of a main electrode in which main current flows, and main electrode and the control electrode formed of the lead frame in the housing are disposed on substantially flat surface except the connecting part to the first, second semiconductor elements and the first and second metal blocks. COPYRIGHT: (C)2004,JPO

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