专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH06208974A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06208974A
公开(公告)日：1994-07-26
申请号：JP27836092
申请日：1992-10-16
申请人： SUMITOMO METAL IND , MITSUBISHI ELECTRIC CORP
发明人： HOSOKI AKIHITO , MIYATAKE HIROSHI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a manufacturing method for a semiconductor device by which etching with silicon oxide is selectively done with high precision. CONSTITUTION:Relating to an ECR type plasma etching device, the mixture gas, O2/C4F8 volume ratio is 1/8-1, is used for etching. The mixture gas containing oxygen gas of the amount equivalent to oxygen atoms subtracted from the gas generated as etching proceeds is, through a gas introduction pipe 22, introduced into a reaction chamber 15.

2. 发明专利

JPH06244152A MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06244152A
公开(公告)日：1994-09-02
申请号：JP3074393
申请日：1993-02-19
申请人： SUMITOMO METAL IND , MITSUBISHI ELECTRIC CORP
发明人： HOSOKI AKIHITO , MIYATAKE HIROSHI , YONEDA MASAHIRO , MATSUO HIROSHI , OMORI NOBUHIKO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/78
摘要： PURPOSE:To highly selectively etch an SiO2 film against an SiN film by performing the etching by generating plasma from a fluorocarbon gas composed of one or two or more kinds of gases or a gas prepared by adding carbon or oxide to the fluorocarbon gas. CONSTITUTION:A sample 25a is prepared by partially forming a photoresist 32 on the upper surface of an SiO2 film 33 on an Si substrate 30 and another sample 25b is prepared by partially forming a photoresist 32 on the upper surface of an SiN film 31 on an Si substrate 30. The etching gas of the film 33 is composed of CF4 and the flow rate and pressure of the gas are respectively set at 40sccm and 1mTorr. In addition, the etching speed ratio of the film 33 against the photoresist 32 is set at about 6. When the F/C ratio of the etching gas is 3, the etching speed ratio of the SiO2 film 33 against the SiN film 31 is small, but, when the F/C ratio is 3, the selecting ratio can be increased to 4-15, since the etching speed of the film 33 can be increased to 300-450nm/min and that of the film 31 can be suppressed to 70-30nm/min.

3. 发明专利

JPH0778805A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0778805A
公开(公告)日：1995-03-20
申请号：JP22170393
申请日：1993-09-07
申请人： APPLIED MATERIALS JAPAN , MITSUBISHI ELECTRIC CORP
发明人： SANPEI TETSUHIKO , ISHIDA TOMOAKI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable the dry etching of an organic thin film without residue, by applying a patterned inorganic thin film to a mask, using plasma of mixed gas wherein fluorine based gas is added to oxygen gas, and dry-etching the organic thin film. CONSTITUTION:The pattern of an silicon oxide film 6 is formed. An organic resist film 5 is subjected to dry etching by applying the pattern of the film 6 to a mask and using mixed gas plasma of oxygen gas and fluorine based gas. When O2 ions enter the surface of the organic resist film 5, the ions react with carbon in the film 5, and CO2 is formed. The CO2 is eliminated and the organic resist film 5 is etched. When O2 ions enter the surface of the silicon oxide film 6, the surface is sputtered and a micromask 8 is diffused on the surface of the organic resist film 5. when F ions enter the micromask 8, the ions react with the micromask 8, and are eliminated in the form of SiF4.

4. 发明专利

JPH05160022A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05160022A
公开(公告)日：1993-06-25
申请号：JP32428191
申请日：1991-12-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO , OGAWA TOSHIAKI , SUZUKI SHOJI
IPC分类号： H01L21/30 , H01L21/027 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To completely remove photoresist through dry process by combining oxygen plasma ashing with a gas plasma ashing for producing an impurity metal or a volatile compound such as an onium compound in the manufacture of a semiconductor device. CONSTITUTION:Impurities such as phosphorus and the like are implanted in a modified layer 3, and the oxide of non-ashing impurities and the mixture formed by coupling of the oxide of non-ashing impurities and hydrocarbon, is grown in oxygen gas plasma. Accordingly, when the modified layer is treated by the oxygen gas plasma, a part of the modified layer 3 is left as residue 5. At this point, the residue 5 can be removed by conducting a treatment using hydrogen gas plasma. The reason of which is that a reducing hydrogen radical is generated in hydrogen plasma, and a volatile compound is grown by the reaction of the oxide such as phosphorus, arsenic and the like and hydrocarbon with the compound such as phosphorus, arsenic and the like. As a result, the residue can be removed without conducting a wet treatment.

5. 发明专利

JPH0464469B2 失效
公开(公告)号：JPH0464469B2
公开(公告)日：1992-10-15
申请号：JP27729985
申请日：1985-12-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO , WAKAMYA WATARU , OGAWA TOSHIAKI , MORITA HIROYUKI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108

6. 发明专利

JPH0456456B2 失效
公开(公告)号：JPH0456456B2
公开(公告)日：1992-09-08
申请号：JP7413479
申请日：1979-06-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： OOHAYASHI YOSHIKAZU , YONEDA MASAHIRO
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/822 , H01L23/52 , H01L27/04 , H01L29/43 , H01L29/45 , H01L29/78

7. 发明专利

JPH0336726A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0336726A
公开(公告)日：1991-02-18
申请号：JP17215389
申请日：1989-07-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： AKAZAWA MORIAKI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable a favorable etching to be made without damaging a ground film by forming a resist which reaches nearly the same etching speed as a side wall remaining at a side wall part of a stage-difference pattern and by eliminating both the resist and the side wall by anisotropic etching. CONSTITUTION:A second oxide film 4 for coating a third electrode 3 is formed so that one part remains at the sidewall part of the first electrode 3 and a side wall 13 is formed at a sidewall stage-difference part 12 of the second oxide film 4. Then, a resist for flattening 15 is formed in a film thickness for enabling the main surface part to be nearly flat. Then, the resist for flattening 15 is eliminated to the extent that one part of the side wall 13 may be exposed uniformly by an anisotropic RIE. Then, by continuing the anisotropic RIE treatment, the side wall 13 is eliminated and one part of the resist for flattening 15 remains on the same main surface film of a gate oxide film 5. The RIE treatment conditions are set so that the etching speed is approximately 3000Angstrom for the resist for flattening 15, is approximately 150Angstrom for the silicon oxide films 4 and 5, and 3000Angstrom or more for a doped polysilicon film 6a.

8. 发明专利

JPH02156566A SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02156566A
公开(公告)日：1990-06-15
申请号：JP31242088
申请日：1988-12-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： YONEDA MASAHIRO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To increase capacitance for the same occupied plane area by constituting a capacitor element of a lamination structure formed so as to sandwich a charge storage capacitor electrode by fixed electrodes. CONSTITUTION:A third conductor layer 11 constituting one electrode layer 9 of a capacitor 5, a second conductor layer 11b constituting the other electrode layer, and a fourth conductor layer 11a are formed as a lamination structure. Between the surfaces where the third conductor layer 11 faces the second conductor layer 11b and a fourth conductor layer 11a, a first dielectric layer 10a and a second dielectric layer 10b are formed. By partially connecting the first dielectric layer 10a and the second dielectric layer 10b, a unified dielectric layer is constituted, and by partially connecting the second conductor layer 11b and the fourth conductor layer 11a, an unified electrode of the other side is constituted. As a result, an effective capacitor part is constituted of the third conductor layer and its unified facing part so as to be sandwiched from above and below by the second and the fourth conductor layers. Thereby, as compared with conventional capacitor elements, about two-fold capacitor area can be secured in the same occupied plane area.

9. 发明专利

JPH01218025A PLASMA ETCHING APPARATUS 失效
公开(公告)号：JPH01218025A
公开(公告)日：1989-08-31
申请号：JP4514488
申请日：1988-02-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： AKAZAWA MORIAKI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent a reaction gas from being liquefied by installing a structure used to heat a reaction gas introduction port and a reaction gas introduction pipe near the introduction port in order to locally heat the reaction gas flowing inside. CONSTITUTION:A heating structure 12 is arranged and installed at a gas introduction port 6 and around a gas introduction pipe 7 near it. When a reaction gas, e.g., CCl4, is introduced into a chamber 1, i.e., when the reaction gas CCl4 flows inside the introduction pipe 7 and flows into the chamber 1 from the gas introduction port 6, the gas is liquefied on a substrate 4 when it is introduced into the chamber 1 at room temperature. When the reaction gas CCl4 is always heated up to 60 deg.C by using the structure 12, it is possible to prevent the reaction gas CCl4 from being liquefied.

10. 发明专利

JPS641054B2 失效
公开(公告)号：JPS641054B2
公开(公告)日：1989-01-10
申请号：JP12025482
申请日：1982-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITAKURA HIDEAKI , NISHIOKA KYUSAKU , YONEDA MASAHIRO
IPC分类号： H01L21/3213 , H01L21/302 , H01L21/306 , H01L21/3065

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式