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1. 发明专利

JP2006303222A Hetero junction bipolar transistor and amplifier provided with it 审中-公开
标题翻译：异步连接双极晶体管和放大器
公开(公告)号：JP2006303222A
公开(公告)日：2006-11-02
申请号：JP2005123525
申请日：2005-04-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUZUKI SATOSHI , YAMAMOTO YOSHITSUGU , OGAWA YOSHIYUKI
IPC分类号： H01L21/331 , H01L29/737
CPC分类号： H01L29/7371 , H01L29/0821
摘要： PROBLEM TO BE SOLVED: To provide a hetero junction bipolar transistor capable of reducing the collector voltage dependency of a gain and an amplifier provided with it.
SOLUTION: On an N+ type collector contact layer 6, an N type collector layer 10 is partially formed. The N type collector layer 10 is composed of an N type collector layer 5 to be relatively hardly depleted, which is partially formed on the N+ type collector contact layer 6, and an N type collector layer 4 to be relatively easily depleted, which is formed entirely on the N type collector layer 5. On the N type collector layer 4, a P+ type base layer 3 including the P type impurities of a high concentration is entirely formed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低增益的集电极电压依赖性的异质结双极晶体管和设置有放大器的放大器。解决方案：在N +型集电极接触层6上，部分地形成N型集电极层10。 N型集电极层10由N +型集电极接触层6部分地形成的相对较少耗尽的N型集电体层5和相对容易耗尽的N型集电极层4构成，形成完全在N型集电极层5上。在N型集电极层4上，完全形成包含高浓度的P型杂质的P +型基极层3。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JPS6334548A SUBSTRATE FOR PHOTOMASK 失效
公开(公告)号：JPS6334548A
公开(公告)日：1988-02-15
申请号：JP17975486
申请日：1986-07-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA YOSHIYUKI
IPC分类号： G03F1/60 , G03F1/00
摘要： PURPOSE:To permit operation with a single hand even with substrate sizes larger than 6 inches and to facilitate the use of jigs by providing at least one recess for grasping the substrate from the side faces thereof to the sides of the substrate. CONSTITUTION:The recesses 2 are provided to the sides of the substrate 1 for a photomask. An operator pinches the substrate by putting his fingers into the recesses 2 or by fitting the jigs into the recesses 2 to hold the photomask with the single hand. The depth of the recesses to be provided to the substrate 1 for the photomask may be about the depth at which the photomask can be held. The shape of the recess may be any shape if the photomask is easily pinchable with the finger and easily supportable with the jigs. The recesses 2 may be provided at any points on the sides of the substrate. The pinching of the side faces of the substrate with the single hand is thus permitted and the holding and transporting are facilitated even with the substrate sizes larger than 6 inches.

3. 发明专利

JPH01305344A INSPECTING DEVICE FOR PATTERN DEFECT 失效
公开(公告)号：JPH01305344A
公开(公告)日：1989-12-08
申请号：JP13631488
申请日：1988-06-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA YOSHIYUKI
IPC分类号： G01B11/24 , G01N21/88 , G06T1/00 , G06T7/60 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To enable correct display of dimensions of all defects by shaping a unit pixel in a right-angled isosceles triangle and by displaying the dimensions of a pattern defect by the lengths of the longest side of the defect and the side intersecting it perpendicularly. CONSTITUTION:The same pattern is present in a plurality of chips on the same substrate, and the pattern in two chips is taken in as an optical image separately and converted into electric signals. Thereafter it is broken down into pixels, each pixel is turned into a numerical value, the pixels of the same pattern element are compared, and a pattern defect 2 is detected from a difference between them. On the occasion, a unit pixel 1 is shaped in a right-angled isosceles triangle and arranged. The dimensions of the defect 2 is displayed more accurately by displaying them by the lengths of the longest side of the defect 2 and the side thereof intersecting it perpendicularly.

4. 发明专利

JP2006351752A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2006351752A
公开(公告)日：2006-12-28
申请号：JP2005174708
申请日：2005-06-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA YOSHIYUKI , YAMAMOTO YOSHITSUGU
IPC分类号： H01L21/331 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device for improving operation efficiency even if it is used as a power amplifier by sufficiently reducing not only an offset voltage but a knee voltage. SOLUTION: The semiconductor device comprises a first collector layer formed of n-type GaAs, a second collector layer on the first collector layer formed of n-type InGaP doped to the concentration of 10 18 cm -3 or more, a base layer on the second collector layer formed of p-type GaAs, and an emitter layer on the base layer formed of n-type InGaP. COPYRIGHT: (C)2007,JPO&INPIT

5. 发明专利

JPS6413551A PHOTOMASK PROTECTOR 失效
公开(公告)号：JPS6413551A
公开(公告)日：1989-01-18
申请号：JP17076287
申请日：1987-07-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA YOSHIYUKI
IPC分类号： G03F1/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To facilitate the washing of protective films or the removal of foreign matter from the films without breaking the films and to improve workability by forming the protective films with an inorg. substance. CONSTITUTION:A pair of photomask protectors 12 each obtd. by adhering a protective film 14 of an inorg. substance to one end of a frame body 3 with both ends open are fitted to both sides of a photomask 1 with an adhesive. When the films 14 are contaminated or foreign matter sticks on the films 14, the washing of the films 14 or the removal of the foreign matter can easily be carried out by a conventional method without breaking the films 14 and the protectors 12 can be reused. Since it is not necessary to detach the protectors 12 before the washing or removal, the protectors 12 can be used as X-ray mask protectors.

6. 发明专利

JP2002245237A PLAN-OFFERING DEVICE, LEDGER GENERATOR, PLAN PROVIDING METHOD, LEDGER-GENERATING METHOD, PLAN-PROVIDING PROGRAM, AND LEDGER-GENERATING PROGRAM 失效
公开(公告)号：JP2002245237A
公开(公告)日：2002-08-30
申请号：JP2001043126
申请日：2001-02-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASUIKE ATSUSHI , HONDA SHINTARO , ITAMOTO HIROMITSU , ISHII ATSUHIKO , KIKUCHI MOTOTAKE , ABE SHINJI , SHIRAI SATOSHI , OGAWA YOSHIYUKI
IPC分类号： G06Q10/00 , G06Q50/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a ledger-generating system capable of outputting money- saving plans. SOLUTION: When commodities are bought at shop terminals 10, data are transferred to a home server via a provider 12 and a network 11. The data on purchase amounts of money are reflected automatically and updated at the home server 14. When monthly appropriation is inputted to the home server 14, a menu list is generated, based on a registered menu DB and the menus of the previous month; and shopping instructions are outputted in reference to the cumulative purchase information at the shop terminals 10. A user can find out the shops which offered low purchase prices.

7. 发明专利

JPS62263633A DRAWING OF PATTERN 失效
公开(公告)号：JPS62263633A
公开(公告)日：1987-11-16
申请号：JP10720286
申请日：1986-05-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： IMAI TADAYOSHI , TANAKA KAZUHIRO , OZAWA HIDEHIKO , OGAWA YOSHIYUKI
IPC分类号： G03F1/44 , G03F1/84 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/66
摘要： PURPOSE:To inspect the accuracy of drawing quantitatively and qualitatively even after development, and to facilitate inspection by previously arranging a monitor pattern, which can monitor the accuracy of drawing quantitatively and qualitatively, to a substrate and scanning the monitor pattern by emitted beams. CONSTITUTION:Semiconductor chips 3 are disposed repeatedly to a rectangle to a photomask 1 so as to form the arrangement 2 of a pattern. The photomask is divided in response to the predetermined width of scanning, and exposed through an electron-beam exposure method from the lower section of the semiconductor chips 3 in the photomask 1. In this case, an L-shaped monitor pattern 41 is width such as 3 mum one is disposed, and monitor patterns 42, 43 in the same width are arranged previously at the corners of the upper section of the monitor pattern 41 in the vertical direction so as to be brought into contact at points (a), (b). Exposure by means of electron beams is complected, development or etching is conducted, and the contacts (a), (b) in the monitor patterns 41-43 are observed, thus qualitatively inspecting the variation of tolerance between X and Y.

8. 发明专利

JPS6355551A PROTECTIVE TOOL FOR PHOTOMASK 失效
公开(公告)号：JPS6355551A
公开(公告)日：1988-03-10
申请号：JP20041486
申请日：1986-08-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGAWA YOSHIYUKI
IPC分类号： G03F1/00 , G03F1/64 , H01L21/027
摘要： PURPOSE:To reuse a photomask by making outside dimensions of protective tools larger than the photomask and providing projections on the inner and outer peripheral edges of frame bodies and providing recessed and projecting parts on junction parts to easily detach the photomask without damaging the surface of the photomask. CONSTITUTION:In case of mounting a pair of protective tools 12 to a photomask 1, the photomask 1 is set on a projection 13a on the inner peripheral edge of a frame body 13 of one protective tool 12 to hold the photomask by this projection 13a, and the other protective tool 12 is fitted along engaging recessed and projecting parts 13b of frame bodies 13. Consequently, the photomask is easily mounted. Since an adhesive is used on engaging recessed and projecting parts 13b, the stain caused by the adhesive is prevented from sticking to the photomask 1 and the photomask 1 is not polluted by the adhesive. When protective tools 12 are detached because of the penetration of foreign maters or the like, the front end of a detaching tool is fitted to the boundary part between projections 13c on the outer peripheral edges of frame bodies 13 and is vertically moved to easily detached protective tools 12 without damaging the surface of the photomask 1, and thus, protective tools 12 are reused.

9. 发明专利

JPS62181433A DRY ETCHING METHOD 失效
公开(公告)号：JPS62181433A
公开(公告)日：1987-08-08
申请号：JP2432086
申请日：1986-02-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANAKA KAZUHIRO , IMAI TADAYOSHI , OZAWA HIDEHIKO , OGAWA YOSHIYUKI , HIROSUE MASAHIRO
IPC分类号： H01L21/302 , C23F1/00 , C23F4/00 , H01L21/3065
摘要： PURPOSE:To enhance an etching rate and to improve the dry-etching resisting property of a resist pattern, by mixing fluorine, carbon, hydrogen or a compound thereof in an etching gas, and performing etching. CONSTITUTION:A metal chromium thin film 2 is deposited on a glass substrate 1. Resist 3 for electron beam exposure is deposited on the film 2. An electron beam 4 is applied for exposure by a dose amount. After the exposure, development is performed with a desired developing liquid and rinsing liquid, and a resist pattern 32 is obtained. With the pattern as a mask, plasma etching is performed. The etching is performed at a mixing ratio of carbon tetrachloride, oxygen, flon gas and hydrogen at 27:80:10:5. The obtained resist pattern 32 is removed, and a desired metal pattern 5 is obtained. Thus the etching rate is enhanced, and the dry-etching resisting property of the resist pattern is improved.

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