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1. 发明专利

JP2005033965A Main circuit current instrumentation system which measures main circuit current value of semiconductor power module and this module 有权
标题翻译：主要电路电流测量系统主要电路半导体电源模块和本模块的电流值
公开(公告)号：JP2005033965A
公开(公告)日：2005-02-03
申请号：JP2003273300
申请日：2003-07-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IWAGAMI TORU , SHIRAKAWA SHINYA , SEO MAMORU , SAKAI MASAKI , O AZUMA
IPC分类号： H01L27/04 , H01L21/822 , H01L23/34 , H01L23/62 , H02M1/00 , H02M7/48 , H05K1/02
CPC分类号： H01L23/34 , H01L23/62 , H01L2224/48091 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H02M2001/0009 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To detect a main-circuit current without using shunt resistor and reduce wiring inductance of a module. SOLUTION: This semi-conductor power module includes a detector 12b for detecting the main-circuit current which flows through a power semi-conductor device. The detector includes first and second circuit patterns 14b, 15b, a bonding wire 16 connected with the first and second circuit patterns at bonding points C, D, respectively, and a pair of terminal patterns 18b, 19b protruding from the vicinity of the bonding points C, D, respectively. The main circuit current is flowed from the first circuit pattern through the second circuit pattern via the bonding wires and a potential difference between the pair of terminal patterns is detected to find the potential difference between both the edges of the bonding wire. The first or the second circuit pattern includes an area G which is adjacent to the bonding wire and extends roughly in parallel. The directions of the main-circuit current flowing through the range G and the bonding wire are in a roughly opposite direction to each other. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：检测主回路电流而不使用分流电阻，减少模块的布线电感。解决方案：该半导体功率模块包括用于检测流过功率半导体器件的主电路电流的检测器12b。检测器包括第一和第二电路图案14b，15b，分别与接合点C，D处的第一和第二电路图案连接的接合线16以及从接合点附近突出的一对端子图案18b，19b C，D。主电路电流通过接合线从第一电路图形流过第二电路图案，并检测一对端子图案之间的电位差，以找出接合线的两个边缘之间的电位差。第一或第二电路图形包括与接合线相邻并且大致平行延伸的区域G. 流过范围G和接合线的主电路的方向彼此大致相反。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2002368599A Interface 有权
标题翻译：接口
公开(公告)号：JP2002368599A
公开(公告)日：2002-12-20
申请号：JP2001169696
申请日：2001-06-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IWAGAMI TORU , SAKATA KOJI , SHIRAKAWA SHINYA
IPC分类号： G06F3/00 , H03K17/0814 , H03K19/003 , H03K19/0175
CPC分类号： H03K17/08142 , H03K19/017545
摘要： PROBLEM TO BE SOLVED: To provide an interface of much higher reliability between a driving circuit of a semiconductor power element and a microcomputer for controlling the output signal of the driving circuit.
SOLUTION: In the interface between the driving circuit of a high active system for driving the prescribed semiconductor power element and the microcomputer for controlling the output signal of the driving circuit, the microcomputer has a transistor, with which a collector terminal forms the output side of the microcomputer, and on the other hand, the driving circuit has a first resistor directly connected to the output side of the microcomputer on one terminal side, a Schmidt circuit serially connected to the other terminal side of the first resistor, a diode connected between the first resistor and the Schmidt circuit on the side of cathode, a power supply voltage connected on the anode side of the diode, and second resistor grounded on one terminal side and connected to a side forming the input terminal of the driving circuit in the first resistor on the other terminal side.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供在半导体功率元件的驱动电路和用于控制驱动电路的输出信号的微型计算机之间具有更高可靠性的接口。解决方案：在用于驱动规定的半导体功率元件的高有效系统的驱动电路和用于控制驱动电路的输出信号的微型计算机之间的接口中，微型计算机具有晶体管，集电极端子形成输出侧微型计算机，另一方面，驱动电路具有在一个端子侧直接连接到微型计算机的输出侧的第一电阻器，与第一电阻器的另一端子串联连接的施密特电路，连接在第一电阻器之间的二极管第一电阻器和阴极侧的施密特电路，连接在二极管的阳极侧的电源电压，以及在一个端子侧接地并连接到形成第一电阻器中的驱动电路的输入端的一侧的第二电阻器在另一个终端。

3. 发明专利

JP2008066929A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008066929A
公开(公告)日：2008-03-21
申请号：JP2006241178
申请日：2006-09-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANAKA TOMONORI , IWAGAMI TORU
IPC分类号： H03K17/16 , H02M1/08 , H03K17/56 , H03K17/687
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device reducing noise generated due to a switching operation when turning-on a voltage-driven element by simple circuit constitution and controlling the drive of a highly efficient switching operation. SOLUTION: The semiconductor device is configured such that a drive circuit for outputting drive signals for turning-on to the gate terminal of the voltage-driven element is provided with a parallel circuit of at least two switching elements and a control circuit switches the switching elements of the parallel circuit when a gate voltage at the turn-on reaches a mirror voltage and lowers the driving ability of the voltage-driven element. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其通过简单的电路结构来降低由于开关操作而产生的噪声，并且控制高效开关操作的驱动。解决方案：半导体器件被配置为使得用于输出用于导通到电压驱动元件的栅极端子的驱动信号的驱动电路设置有至少两个开关元件的并联电路和控制电路开关当导通时的栅极电压达到镜电压并且降低电压驱动元件的驱动能力时，并联电路的开关元件。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2003018862A Inverter module 有权
标题翻译：逆变器模块
公开(公告)号：JP2003018862A
公开(公告)日：2003-01-17
申请号：JP2001202153
申请日：2001-07-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAWATO HISASHI , IWAGAMI TORU
IPC分类号： H01L25/07 , G11C5/02 , H01L23/495 , H01L25/18 , H01L27/02 , H02M7/00 , H02M7/48
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L27/0207 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48599 , H01L2224/48699 , H01L2224/4903 , H01L2224/49051 , H01L2224/49112 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01039 , H01L2924/01067 , H01L2924/01074 , H01L2924/01079 , H01L2924/1305 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an inverter module which has large creeping distances between terminals, to which relatively high potentials are applied, and other terminals. SOLUTION: An inverter module has a plurality of leads arranged into a ZIP form. The leads 101U, 101V, and 101W which function as load side output terminals and leads 104U, 104V, and 104W which function as high potential side control input terminals are bent in directions opposite to each other. Further, the leads 101U, 101V, and 101W and leads 107U, 107V, and 107W which function as low potential side control input terminals are separated from each other by distances four times of a terminal pitch.
摘要翻译：要解决的问题：提供一种逆变器模块，其在施加相对较高电位的端子之间具有大的爬电距离，以及其它端子。解决方案：逆变器模块具有排列成ZIP形式的多个引线。用作负载侧输出端子的引线101U，101V和101W以及用作高电位侧控制输入端子的引线104U，104V和104W在彼此相反的方向上弯曲。此外，用作低电位侧控制输入端子的引线101U，101V和101W以及引线107U，107V和107W彼此间隔四分之一的端子间距。

5. 发明专利

JP2006166691A Semiconductor apparatus for electric power 有权
标题翻译：电力半导体装置
公开(公告)号：JP2006166691A
公开(公告)日：2006-06-22
申请号：JP2005290996
申请日：2005-10-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IWAGAMI TORU , SHIRAKAWA SHINYA
IPC分类号： H02M1/00 , H02M7/48
CPC分类号： H02M7/53873 , H02M1/088
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus for electric power in which surge is restrained. SOLUTION: A semiconductor apparatus for electric power includes power switching semiconductor devices for electric power at a pair of series-connected high-voltage side and low-voltage side; flywheel diodes reverse connected to each of power switching semiconductor devices for electric power; and a gate drive circuit, arranged for each power switching semiconductor device for electric power, for feeding a drive signal to a gate the power switching semiconductor devices for electric power according to the input signal. Further, in order to restrain the effect of surge, for example, diodes are inserted between a gate drive circuit at low-voltage side and a control power supply circuit for supplying power supply voltage to its gate drive circuit. Alternatively, diodes are inserted, between a gate drive circuit and an input terminal for supplying the input signal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供抑制浪涌的电力用半导体装置。解决方案：一种用于电力的半导体装置包括在一对串联高压侧和低压侧的用于电力的功率开关半导体器件; 反向连接到用于电力的每个功率开关半导体器件的飞轮二极管; 以及栅极驱动电路，其布置用于每个用于电力的功率开关半导体器件，用于根据输入信号将用于电力的功率开关半导体器件的驱动信号馈送到栅极。此外，为了抑制浪涌的影响，例如，在低电压侧的栅极驱动电路和用于向其栅极驱动电路供给电源电压的控制电源电路之间插入二极管。或者，在栅极驱动电路和用于提供输入信号的输入端子之间插入二极管。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004048084A Semiconductor power module 审中-公开
标题翻译：半导体功率模块
公开(公告)号：JP2004048084A
公开(公告)日：2004-02-12
申请号：JP2003382356
申请日：2003-11-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： GOORAB MAJUMUDAAR , IWAGAMI TORU , NODA SUKEHISA
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/13055 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To satisfy both of excellent heat dissipating characteristic and reduction in manufacturing cost. SOLUTION: A punched lead frame 3 serves not only as the wiring pattern of a control circuit 8 and a power circuit 9 but also as external terminals 15 and 17. The gap between the lead frame 3 and a heat sink 1 arranged so as to face to each other is filled with a highly heat-conductive resin 2 having an electrically insulating property for maintaining the heat conduction between them to be suitable. The heat sink 1 and the lead frame 3 can be easily and fixedly connected by a simple process for sealing the highly heat-conductive resin 2. Therefore, an expensive circuit board, which was necessary in a conventional apparatus, is not necessary, and a process for patterning the wiring pattern and a process for connecting the external terminals to the wiring pattern are not necessary when the apparatus is manufactured. In other words, the manufacturing cost can be reduced without degrading the heat dissipating characteristic. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：既满足优异的散热特性又降低制造成本。解决方案：冲压引线框架3不仅用作控制电路8和电源电路9的布线图案，而且用作外部端子15和17.引线框架3和散热器1之间的间隙如此布置相互面对地填充有具有电绝缘性的高导热性树脂2，以保持它们之间的热传导是合适的。通过用于密封高导热性树脂2的简单工艺，可以容易且牢固地连接散热器1和引线框3。因此，在传统的装置中不需要昂贵的电路板，并且当制造装置时，不需要用于图案化布线图案的处理和用于将外部端子连接到布线图案的处理。换句话说，可以降低制造成本而不降低散热特性。版权所有（C）2004，JPO

7. 发明专利

JP2009252885A Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：JP2009252885A
公开(公告)日：2009-10-29
申请号：JP2008097087
申请日：2008-04-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHO AKIRA , IWAGAMI TORU , TANAKA TOMONORI
IPC分类号： H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L24/73 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device that neither increases in cost and man-hour nor decreases in assembly easiness while accurately and rapidly detecting a switching element generating heat. SOLUTION: A heat dissipation plate 14 mounted opposite to a first frame portion 2a where power semiconductor elements 4 and 5 are mounted is extended to a reverse surface part of a second frame portion 2c where an integrated circuit 6 for control is mounted to have an extension part 15 which is thicker than a part of the heat dissipation plate 14 which faces the first frame portion 2a and close to the second frame portion 2c. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种功率半导体器件，其既能准确而快速地检测产生热量的开关元件，也不会增加成本和工时，也不会降低组装容易度。解决方案：安装有功率半导体元件4和5的第一框架部分2a相对的散热板14延伸到第二框架部分2c的反面部分，其中安装用于控制的集成电路6 具有比散热板14的面向第一框架部分2a并靠近第二框架部分2c的部分更厚的延伸部分15。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2004364405A Semiconductor device for power and semiconductor integrated circuit device used for that device 有权
标题翻译：用于该器件的功率和半导体集成电路器件的半导体器件
公开(公告)号：JP2004364405A
公开(公告)日：2004-12-24
申请号：JP2003159419
申请日：2003-06-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKATA KOJI , IWAGAMI TORU
IPC分类号： H02M1/08 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, which can surely break a switching semiconductor element for power also in other semiconductor integrated circuit devices when an overcurrent is detected in one semiconductor integrated circuit device without providing each of them with a terminal which outputs a fault signal to outside, and a semiconductor device for power where the switching semiconductor element for power is packaged. SOLUTION: At least one of two or more semiconductor integrated circuit devices is equipped with an abnormality detecting circuit 73 which makes an error sensing signal from an excessive input current to the switching semiconductor element for power, an impedance reduction circuit 72 which lowers the impedance of a power line within the semiconductor integrated circuit by the output of the error sensing signal, and a drive signal breaking circuit 71 which breaks the output of the semiconductor integrated circuit IC3 concerned by sensing a drop in the voltage of a power source by the impedance drop of this power line. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体集成电路器件，当在一个半导体集成电路器件中检测到过电流时，其也可以在其他半导体集成电路器件中断开用于功率的开关半导体元件，而不使它们中的每一个都具有将故障信号输出到外部的端子，以及用于电力的切换半导体元件被封装的用于电力的半导体器件。解决方案：两个或更多个半导体集成电路器件中的至少一个配备有异常检测电路73，该异常检测电路73将来自过电压输入电流的误差检测信号输出到用于电力的开关半导体元件，降低电路的阻抗降低电路72 通过误差检测信号的输出在半导体集成电路内的电力线的阻抗，以及驱动信号断开电路71，其通过感测电源的电压的下降来检测出电源的电压的下降，从而中断半导体集成电路IC3的输出该电源线的阻抗下降。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004096870A Power semiconductor device 审中-公开
公开(公告)号：JP2004096870A
公开(公告)日：2004-03-25
申请号：JP2002253324
申请日：2002-08-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIRAKAWA SHINYA , IWAGAMI TORU
IPC分类号： H02M1/00
摘要： PROBLEM TO BE SOLVED: To solve the following problem that malfunction of an overcurrent protective function provided in a driving circuit for a power semiconductor element or MCU for controlling the driving circuit causes the power semiconductor to be critically damaged. SOLUTION: This power semiconductor device comprises the power semiconductor elements (SW1, SW2), and the driving circuits (IC1, IC2) for driving the power semiconductor elements. The driving circuit has a function which cuts off driving outputs (OUT1, OUT2) of the power semiconductor element when overcurrent is detected at the power semiconductor element, and outputs an Fo signal to the MCU to cut off input signals (IN1, IN2) to the driving circuit. This power semiconductor device also includes switching means (T3, T4) for setting a signal input line of the driving circuit at a low level. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003309982A Power semiconductor device 审中-公开
标题翻译：功率半导体器件
公开(公告)号：JP2003309982A
公开(公告)日：2003-10-31
申请号：JP2002113397
申请日：2002-04-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IWAGAMI TORU , SHIRAKAWA SHINYA
IPC分类号： H02J17/00 , H02M1/00 , H02M7/5387 , H03K17/08 , H03K17/082 , H03K17/16
CPC分类号： H03K17/16 , H02J17/00 , H03K17/0826
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device, wherein control circuits are preventing from breaking down, due to the surge voltage applied to between predetermined terminals of the control circuits which control the switching operation of semiconductor elements. SOLUTION: The power semiconductor device comprises a half-bridge circuit, formed by series connecting of semiconductor elements SW1 and SW2 to the high-voltage side and the low voltage side; and control circuits IC1 and IC2, which control the switching operation of the semiconductor elements SW1 and SW2, respectively, and have a power supply input terminal VCC connected with the high-potential side of a control power supply. The power semiconductor device further comprises a Zener diode ZD, connected between the power supply input terminal VCC of the control circuit IC1 which controls the low voltage-side semiconductor element SW1 and an emitter terminal N1, which is the low- voltage side terminal of the low-voltage side semiconductor element SW1. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种功率半导体器件，其中控制电路由于施加到控制半导体元件的开关操作的控制电路的预定端子之间的浪涌电压而防止分解。解决方案：功率半导体器件包括通过将半导体元件SW1和SW2串联连接到高压侧和低压侧而形成的半桥电路; 以及分别控制半导体元件SW1和SW2的开关操作的控制电路IC1和IC2，并且具有与控制电源的高电位侧连接的电源输入端子VCC。功率半导体器件还包括齐纳二极管ZD，其连接在控制电路IC1的控制电路IC1的电源输入端子VCC和控制低电压侧半导体元件SW1的发射极端子N1之间，发射极端子N1是低压侧半导体元件低压侧半导体元件SW1。版权所有（C）2004，JPO

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