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1. 发明专利

JP2009283478A Resin sealed semiconductor device, and method of manufacturing the same 有权
标题翻译：树脂密封半导体器件及其制造方法
公开(公告)号：JP2009283478A
公开(公告)日：2009-12-03
申请号：JP2008130776
申请日：2008-05-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAWATO HISASHI , NAKAGAWA SHINYA
IPC分类号： H01L23/28
CPC分类号： H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a resin sealed semiconductor device whose package is made compact while insulation of a suspension lead is secured, and to provided a method of manufacturing the same. SOLUTION: Semiconductor chips 20 and 22 are mounted on die pads 10 and 12. A lead terminal 16 is disposed apart from the die pad 12. The semiconductor chip 22 and lead terminal 16 are connected by a wire 24. The suspension lead 18 is connected to the die pad 10. The die pads 10 and 12, the semiconductor chips 20 and 22, and a part of the lead terminal 16, the wire 24, and a part of the suspension lead 18 are sealed with mold resin 30. The lead terminal 16 projects outward from a side face of the mold resin 30. A cut 36 is formed on the side face of the mold resin 30. The cut 36 is narrower at an opening-side part 42 than at an inner part 44. The suspension lead 18 projects out of the mold resin 30 from the inner part of the cut 36. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种树脂密封半导体器件，其封装是紧凑的，同时保持悬挂引线的绝缘，并提供其制造方法。解决方案：半导体芯片20和22安装在芯片焊盘10和12上。引线端子16与芯片焊盘12分开设置。半导体芯片22和引线端子16通过导线24连接。管芯焊盘10和12，半导体芯片20和22以及引线端子16的一部分，导线24和悬挂引线18的一部分用模制树脂30密封引线端子16从模制树脂30的侧面向外突出。在模制树脂30的侧面形成切口36.切口36在开口侧部分42处比内部部分44更窄悬挂引线18从切割部36的内部突出到模制树脂30外。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008277630A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008277630A
公开(公告)日：2008-11-13
申请号：JP2007121123
申请日：2007-05-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAGAWA SHINYA , KAWATO HISASHI , SANO KO , HAYASHI KENICHI
IPC分类号： H01L23/28
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can shorten a manufacturing time, prevent nozzle clogging upon formation of a coat member, improve the contactness of the coat member, and prevent outside leakage of the coat member. SOLUTION: Sealing resin members 1, 2 have a notch 1a therein obtained by cutting their angular parts, in which one end of a dummy part 3a of a lead 3 and semiconductor elements 5a, 5b are sealed. The other end of the dummy part 3a is exposed. A coat member 4 covers the dummy part 3a exposed from the sealing members 1, 2. The sealing members 1, 2 has a projection 1b which is located within the notch 1a and is positioned between the coat member 4 and a side surface 12a (or 12b, 12c). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种可以缩短制造时间的半导体装置，防止在形成涂层部件时喷嘴堵塞，改善涂层部件的接触性，并且防止涂层部件的外部泄漏。解决方案：密封树脂构件1,2在其中通过切割它们的角部而在其中具有切口1a，其中引线3的虚设部分3a的一端和半导体元件5a，5b被密封。虚拟部3a的另一端露出。涂层构件4覆盖从密封构件1,2暴露的虚拟部分3a。密封构件1,2具有位于凹口1a内的凸起1b，位于涂层构件4和侧表面12a之间（或 12b，12c）。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008263210A Power semiconductor package 审中-公开
标题翻译：功率半导体封装
公开(公告)号：JP2008263210A
公开(公告)日：2008-10-30
申请号：JP2008129859
申请日：2008-05-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , INOUE OKINORI , OZAKI HIROYUKI
IPC分类号： H01L23/34 , H01L21/60 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/05624 , H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/48 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48455 , H01L2224/48465 , H01L2224/48475 , H01L2224/48479 , H01L2224/48599 , H01L2224/48624 , H01L2224/48699 , H01L2224/48724 , H01L2224/49 , H01L2224/4903 , H01L2224/49051 , H01L2224/78 , H01L2224/78301 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/013 , H01L2924/00012 , H01L2924/01006 , H01L2224/4554
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor package having a small size and high reliability. SOLUTION: A power semiconductor package 100 having a plurality of leads 1 protruded from a mold resin 6 comprises: a first lead 1a including a first die pad 1b; power chips 2 mounted to the surface of the first die pad; a second lead 1c including a second die pad; a control chip 3 mounted to the second die pad; a wire 4 whose main component is gold and which connects the power chips with the control chip; and the mold resin in which the first lead and the second lead are embedded with their ends protruded outwardly, wherein the first end of the wire is ball-bonded to the control chip, and the second end is stitch-bonded to a power chip. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有小尺寸和高可靠性的功率半导体封装。解决方案：具有从模制树脂6突出的多个引线1的功率半导体封装100包括：包括第一管芯焊盘1b的第一引线1a; 功率芯片2安装在第一裸片焊盘的表面上; 包括第二管芯焊盘的第二引线1c; 安装到第二管芯焊盘的控制芯片3; 主要部件为金并将功率芯片与控制芯片连接的导线4; 以及其中第一引线和第二引线被嵌入其中端部向外突出的模制树脂，其中线的第一端与控制芯片滚珠接合，并且第二端被缝合到功率芯片。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2005150595A Semiconductor device for electric power 有权
标题翻译：电力半导体器件
公开(公告)号：JP2005150595A
公开(公告)日：2005-06-09
申请号：JP2003389254
申请日：2003-11-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , INOUE OKINORI , OZAKI HIROYUKI
IPC分类号： H01L23/29 , H01L21/60 , H01L23/31 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/45 , H01L2224/45124 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48465 , H01L2224/48475 , H01L2224/49 , H01L2224/4903 , H01L2224/49051 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85009 , H01L2224/85051 , H01L2224/85181 , H01L2224/85186 , H01L2224/85951 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power which is small-sized and has high reliability. SOLUTION: The semiconductor device 100 for electric power which has a plurality of leads 1 projected from mold resin 6 includes a 1st lead including a 1st die pad part, power chips 21 and 22 which are mounted on the top surface of the 1st die pad part, an insulating sheet 7 which is fitted to the reverse surface of the 1st die pad part and has larger heat conductivity than the mold resin 6, a 2nd lead including a 2nd die pad part, a control chip 3 which is mounted on the 2nd die pad part, a wire 4 which consists principally of gold connecting the power chips 21 and 22 and control chip 3, and the mold resin 6 in which the control chip 3 and power chips 21 and 22 are buried so that ends of the 1st lead and 2nd lead protrude respectively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供小型化，高可靠性的电力用半导体装置。解决方案：具有从模制树脂6突出的多个引线1的电力用半导体装置100包括：第一导线，其包括第一芯片焊盘部分，功率芯片21和22，其安装在第一芯片焊盘部分，安装在第一芯片焊盘部分的反面上并且具有比模制树脂6更大的热导率的绝缘板7，包括第二芯片焊盘部分的第二引线，安装在第二芯片焊盘部分上的控制芯片3 第二芯片焊盘部分，主要由连接功率芯片21和22以及控制芯片3的金子组成的导线4和模制树脂6，其中控制芯片3和功率芯片21和22被埋入其中，第一铅和第二铅分别突出。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005123495A Manufacturing method of semiconductor device, and semiconductor device 有权
标题翻译：半导体器件的制造方法和半导体器件
公开(公告)号：JP2005123495A
公开(公告)日：2005-05-12
申请号：JP2003358815
申请日：2003-10-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , FUNAKOSHI NOBUHITO , OZAKI HIROYUKI
IPC分类号： H01L25/18 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/433 , H01L23/495 , H01L25/04
CPC分类号： H01L23/49575 , H01L21/565 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which is excellent in heat dissipation property and insulation property. SOLUTION: The manufacturing method of a semiconductor device wherein a chip is subjected to resin mold has a process for preparing a frame with a front surface and a rear surface having a die pad, a process for preparing an insulating resin sheet with a first surface and a second surface, a process for preparing a resin sealing mold with a press pin, a process for mounting a resin sheet inside a resin sealing mold so that a second surface of the resin sheet comes into contact with the inner bottom surface of the resin sealing mold, a process for mounting a power chip on the surface of the die pad, a process for arranging a frame on the first surface of the resin sheet so that the rear surface of the die pad comes into contact with a first surface of the resin sheet, a process for fixing the die pad by pressing the die pad toward the resin sheet by the press pin, a process for putting the sealing resin in the resin sealing mold and hardening it, and a process for unloading the semiconductor device from the resin sealing mold. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供散热性和绝缘性优异的半导体器件的制造方法。解决方案：其中芯片经受树脂模具的半导体器件的制造方法具有制备具有正面和背面的框架的工艺，该框架具有模片垫，制备绝缘树脂片的方法，其具有第一表面和第二表面，制备具有压销的树脂密封模具的方法，将树脂片材安装在树脂密封模具内以使树脂片材的第二表面与内部底部表面接触的方法树脂密封模具，用于将功率芯片安装在芯片焊盘的表面上的工艺，将框架布置在树脂薄片的第一表面上使得模片垫的后表面与第一表面接触的过程的树脂片的制造方法，通过利用压销将模片垫压向树脂片来固定模片垫的方法，将密封树脂放入树脂密封模具中并使其硬化的工序，以及卸载半固化的工序导体装置由树脂密封模具组成。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2009111154A Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：JP2009111154A
公开(公告)日：2009-05-21
申请号：JP2007281844
申请日：2007-10-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAGAWA SHINYA , KAWATO HISASHI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module obtaining a stable assembly performance, and preventing a reduction in mounting area of a power semiconductor element while maintaining a high heat radiation property, and a downsized outside profile. SOLUTION: The reduction in mounting area of the power semiconductor element of the power semiconductor module is prevented by forming a sunken dimension of a frame part 2a with the power semiconductor element mounted shallower than that of the traditional one, and holding it by two parts of a first lead step part 2e and a second lead step part 2h to suppress a floppy property of the frame part 2a. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供获得稳定的组装性能的功率半导体模块，并且在保持高散热性的同时防止功率半导体元件的安装面积的减小以及尺寸缩小的外部轮廓。解决方案：功率半导体模块的功率半导体元件的安装面积的减小通过在功率半导体元件比传统功率半导体元件浅的情况下形成框架部分2a的凹陷尺寸来防止，并且将其保持在第一引导步骤部分2e和第二引导步骤部分2h的两部分，以抑制框架部分2a的软盘性质。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2005109100A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005109100A
公开(公告)日：2005-04-21
申请号：JP2003339730
申请日：2003-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , FUNAKOSHI NOBUHITO , OZAKI HIROYUKI , TADA KAZUHIRO
IPC分类号： H01L23/29 , H01L21/56 , H01L23/28 , H01L23/36 , H01L23/433 , H01L23/495 , H01L23/50
CPC分类号： H01L21/565 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49113 , H01L2924/00014 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power in which the heat radiation characteristic is superior, insulating properties are high, and further a miniaturization is possible.
SOLUTION: The semiconductor device composed of a resin-molded chip, contains a frame which comprises a front and rear surface and includes a die pad; a power chip mounted on the surface of the die pad; an insulating resin sheet which comprises a first surface and a second surface which face each other, and in which the rear surface of the die pad is disposed so as to come into contact with its first surface; and a molded resin formed on the first surface of the resin sheet so as to encapsulate the power chip. The heat conductivity of the resin sheet is greater than that of the molded resin.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供散热特性优良的绝缘性能高的电力半导体装置，进一步小型化是可能的。解决方案：由树脂模制芯片组成的半导体器件包括一个包括前表面和后表面并且包括管芯焊盘的框架; 功率芯片安装在芯片焊盘的表面上; 绝缘树脂片，其包括彼此面对的第一表面和第二表面，并且其中芯片垫的后表面设置成与其第一表面接触; 以及形成在树脂片的第一表面上以封装功率芯片的模制树脂。树脂片的导热率大于模塑树脂的导热率。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003018862A Inverter module 有权
标题翻译：逆变器模块
公开(公告)号：JP2003018862A
公开(公告)日：2003-01-17
申请号：JP2001202153
申请日：2001-07-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAWATO HISASHI , IWAGAMI TORU
IPC分类号： H01L25/07 , G11C5/02 , H01L23/495 , H01L25/18 , H01L27/02 , H02M7/00 , H02M7/48
CPC分类号： H01L24/06 , H01L23/49562 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L27/0207 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48599 , H01L2224/48699 , H01L2224/4903 , H01L2224/49051 , H01L2224/49112 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01039 , H01L2924/01067 , H01L2924/01074 , H01L2924/01079 , H01L2924/1305 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an inverter module which has large creeping distances between terminals, to which relatively high potentials are applied, and other terminals. SOLUTION: An inverter module has a plurality of leads arranged into a ZIP form. The leads 101U, 101V, and 101W which function as load side output terminals and leads 104U, 104V, and 104W which function as high potential side control input terminals are bent in directions opposite to each other. Further, the leads 101U, 101V, and 101W and leads 107U, 107V, and 107W which function as low potential side control input terminals are separated from each other by distances four times of a terminal pitch.
摘要翻译：要解决的问题：提供一种逆变器模块，其在施加相对较高电位的端子之间具有大的爬电距离，以及其它端子。解决方案：逆变器模块具有排列成ZIP形式的多个引线。用作负载侧输出端子的引线101U，101V和101W以及用作高电位侧控制输入端子的引线104U，104V和104W在彼此相反的方向上弯曲。此外，用作低电位侧控制输入端子的引线101U，101V和101W以及引线107U，107V和107W彼此间隔四分之一的端子间距。

9. 发明专利

JP2014203871A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2014203871A
公开(公告)日：2014-10-27
申请号：JP2013076650
申请日：2013-04-02
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： KAWASHIMA YUJI , KIKUCHI MASAO , KAWATO HISASHI
IPC分类号： H01L25/07 , H01L25/10 , H01L25/18
CPC分类号： H01L2224/48137 , H01L2224/48139 , H01L2224/49111
摘要：【課題】電子部品下で絶縁基板との間にボイドの発生を抑制することができる半導体装置を提供する。【解決手段】電子部品3を実装し貫通穴7を設けた絶縁基板2を、フィラーを含有した封止樹脂8にて封止して形成した半導体装置1であって、絶縁基板は、絶縁基板の実装面2cで貫通穴の周縁部に形成した凹形状の変位発生部20を有する。【選択図】図1
摘要翻译：要解决的问题：提供能够抑制电子部件和绝缘基板之间的空隙的产生的半导体器件。解决方案：半导体器件1通过密封其中安装有电子部件3的绝缘基板2和通孔孔7形成在其上，密封树脂8包含填料。绝缘基板具有形成在绝缘基板的安装面2c上的贯通孔的周边部分上的凹形位移部20。

10. 发明专利

JP2014203870A 半導体装置の製造方法及び半導体装置有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2014203870A
公开(公告)日：2014-10-27
申请号：JP2013076649
申请日：2013-04-02
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： KAWASHIMA YUJI , KIKUCHI MASAO , KAWATO HISASHI
IPC分类号： H01L21/56
CPC分类号： H01L2224/0603 , H01L2224/48139 , H01L2224/49111
摘要：【課題】電子部品下で絶縁基板との間にボイドの発生を抑制することができる半導体装置の製造方法及び半導体装置を提供する。【解決手段】電子部品3を実装した絶縁基板2で電子部品に対応して貫通穴7を設けた絶縁基板を樹脂封止して形成する半導体装置の製造方法であって、封止用金型10内にて絶縁基板の貫通穴に対して可動ピン11を挿入可能に配置し、封止樹脂8を注入し静水圧を作用させながら可動ピンを用いて電子部品と絶縁基板との隙間及び貫通穴へ封止樹脂を充填させる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够抑制电子部件与绝缘基板之间的空隙的产生的半导体装置的制造方法以及半导体装置。本发明提供一种半导体装置的制造方法，所述半导体装置用于树脂密封和形成其上安装有电子部件3的绝缘基板2和与电子部件对应的通孔7形成在可动销10上，可插入到绝缘基板上的通孔中并且通过在注入密封树脂并施加静水压力的同时通过使用可动销来填充电子部件和绝缘基板和通孔之间的间隙，密封树脂8。

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