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1. 发明专利

JPH0247105B2 失效
公开(公告)号：JPH0247105B2
公开(公告)日：1990-10-18
申请号：JP20225384
申请日：1984-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： HARADA HIROTSUGU , IIDA TAKAHIKO , IKEO HIROBUMI , HASHIZUME TSUNEO , FUKUSHIMA JIRO , TOSA MASANORI
IPC分类号： H01L21/56

2. 发明专利

JPS6178126A Resin sealing process for semiconductor device 失效
标题翻译：半导体器件的树脂密封工艺
公开(公告)号：JPS6178126A
公开(公告)日：1986-04-21
申请号：JP20225384
申请日：1984-09-25
申请人： Mitsubishi Electric Corp
发明人： HARADA HIROTSUGU , IIDA TAKAHIKO , IKEO HIROBUMI , HASHIZUME TSUNEO , FUKUSHIMA JIRO , TOSA MASANORI
IPC分类号： H01L21/56
CPC分类号： H01L21/56 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00014
摘要： PURPOSE:To ease up any stress concentration in the peripheral part by means of resin-sealing the central part and both ends of semiconductor chip in separate process. CONSTITUTION:The central part of LSI chip 3 is sealed by sealing resin 5a to be hardened. Next residual parts are sealed by sealing resin 5b to complete resin sealing process. Through these procedures, any stress caused by hardening process may be reduced remarkably since in case of resin-sealing a semiconductor chip, the central part and both ends are separately processed i.e. after sealing and hardening one part, the other parts are sealed.
摘要翻译：目的：通过在单独的工艺中树脂密封半导体芯片的中心部分和两端来缓解周边部分的任何应力集中。构成：LSI芯片3的中央部由密封树脂5a密封而硬化。接下来的残留部分通过密封树脂5b密封以完成树脂密封过程。通过这些程序，由于硬化处理引起的任何应力都可能显着降低，因为在树脂密封半导体芯片的情况下，中心部分和两端分别加工，即在密封和硬化一部分之后，其它部分被密封。

3. 发明专利

JPS536728A IGNITION CIRCUIT 失效
公开(公告)号：JPS536728A
公开(公告)日：1978-01-21
申请号：JP8120176
申请日：1976-07-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO , MORI SATOSHI
IPC分类号： F02P3/045 , F02P3/08 , H01L21/331 , H01L29/73
摘要： PURPOSE:To simplify ignition circuit by employing electrostatic inductive thyrista and to reduce electric loss at the circuit so that efficiency can be improved.

4. 发明专利

JP2000347753A SOLAR BATTERY CONTROLLER AND SOLAR POWER GENERATING DEVICE 失效
公开(公告)号：JP2000347753A
公开(公告)日：2000-12-15
申请号：JP16043599
申请日：1999-06-08
申请人： MITSUBISHI ELECTRIC CORP , KAKEI GAKUEN
发明人： IWAMOTO HIDEO , IIDA TAKAHIKO , RYU NOBUYUKI
IPC分类号： G05F1/67
摘要： PROBLEM TO BE SOLVED: To provide a solar power generating device having a maximum power point tracking function capable of accurately detecting a maximum power point even when the output power-output voltage characteristic of a solar battery has a plurality of peaks without making the output voltage and output power of the solar battery fluctuate needlessly. SOLUTION: An output power-output voltage characteristic detecting means CD1 provided with a solar battery PV1 having the same environmental condition as a main solar battery PV2 is provided apart from a main generation circuit. Then, an output voltage controlling means CT1 obtains the numerical data of the output power-output voltage characteristic of the battery PV1 for characteristic detection by turning a switch SW on or off and detects a maximum power point. Then, control signals S1a to S1d are given to respective transistors T1 to T4 of a voltage type inverter IV1 so that the main solar battery PV2 can generate a voltage value corresponding to the detected maximum power point.

5. 发明专利

JPS6297358A RESIN SEALED TYPE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS6297358A
公开(公告)日：1987-05-06
申请号：JP23883985
申请日：1985-10-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO ISAMU , IIDA TAKAHIKO , ITO EIZO , SAWAMORI YUJI
IPC分类号： H01L23/28 , H01L23/29 , H01L23/495
摘要： PURPOSE:To make it possible to perform high speed switching, by making a distance between a specified inner lead and a heat sink, which are surrounded with resin, longer than a distance between another inner load and the heat sink. CONSTITUTION:A distance between a lead 3, which is to become an input and output pin, and a peripheral part 4a of a heat sink 4 is made longer than a distance between the lead 3 and a peripheral part 4b of the heat sink 4. Thus, electrostatic capacitance is made small. Since the distance between the inner lead and the heat sink, which are surrounded with resin, is made longer than the distance between the other inner lead and the heat sink, which are surrounded with said resin, switching of a resin sealed type semiconductor integrated circuit can be performed at a high speed.

6. 发明专利

JPS52144756A DC SWITCH 失效
公开(公告)号：JPS52144756A
公开(公告)日：1977-12-02
申请号：JP6187376
申请日：1976-05-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO
IPC分类号： H03K17/73 , H03K17/04
摘要： PURPOSE:To on-off control a load with a slight amount of power as well as to rapidly cut off the load current through a relatively simple circuit, by charging the charge accumulating method to a potential above the power supply voltage utilizing a reactor resonance.

7. 发明专利

JPS528779A SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JPS528779A
公开(公告)日：1977-01-22
申请号：JP8469175
申请日：1975-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAGINO HIROYASU , GAMOU HIROSHI , IIDA TAKAHIKO , IKEGAWA HIDEAKI
IPC分类号： H01L29/872 , H01L29/47
摘要： PURPOSE:To improve inverse overvoltage withstanding of Schottky diodes by providing a guard ring layer and having it absorb overvoltage on a preferential basis.

8. 发明专利

JPS528778A SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JPS528778A
公开(公告)日：1977-01-22
申请号：JP8468875
申请日：1975-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： GAMOU HIROSHI , IIDA TAKAHIKO , IKEGAWA HIDEAKI
IPC分类号： H01L29/872 , H01L29/47
摘要： PURPOSE:To obtain a Schottky barrier diode withstanding inversion voltage breakdown by giving and overvolatage absorption power to P-n junction which constitutes a guard ring.

9. 发明专利

JPS5150562A 失效
公开(公告)号：JPS5150562A
公开(公告)日：1976-05-04
申请号：JP12506074
申请日：1974-10-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO
IPC分类号： H02M1/08 , H03K17/13 , H03K17/72

10. 发明专利

JPS62266852A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS62266852A
公开(公告)日：1987-11-19
申请号：JP11201486
申请日：1986-05-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO
IPC分类号： H01L23/28 , H01L23/29 , H01L23/31
摘要： PURPOSE:To improve the reliability of an IC chip, by providing an adhesion improving material of a molding resin between the back surface of a die pad for fixing the IC chip and the molding resin, thereby closely adhering the surfaces between both parts. CONSTITUTION:A precoat material 6 is deposited and formed on the entire rear of a die pad 2. Both an IC chip 1 and an inner lead 4 are molded with a resin 5. The precoat material 6 is formed as a thin film having adequate hardness by the following way: after a wire bonding process, the rear of the die pad 2 of a lead frame 3 is washed and cleaned; then polyimide is thinly applied and cured as required; and the hardness is increased to about 100 Rockwell. Thermal stress and strain due to the difference between the linear expansion coefficients of the material of the die pad 2 and the molding resin 5 are absorbed. The rear of the die pad 2 and the molding resin 5 are perfectly adhered closely. Therefore moisture in air does not intrude, and the yield of cracks in the molding resin 5 can be positively prevented.

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