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1. 发明专利

JP2001169553A SWITCHED MODE RECTIFIER 失效
公开(公告)号：JP2001169553A
公开(公告)日：2001-06-22
申请号：JP34276199
申请日：1999-12-02
申请人： MITSUBISHI ELECTRIC CORP , KAKEI GAKUEN
发明人： IWAMOTO HIDEO , IIDA TAKAHIKO , RYU NOBUYUKI
IPC分类号： H02M7/12 , H02M3/155
摘要： PROBLEM TO BE SOLVED: To realize an SMR capable of avoiding problems such as difficulty of circuit parameter adjustment and many components which are caused by an analog circuit by controlling a PWM pulse control part not with an analog circuit but with software. SOLUTION: Data of each pulse width of a PWM pulse train corresponding to a rector current in the case of rated operation are obtained by previously performing simulation, and stored in a ROM table in a PWM pulse control part P1. Synchronously with an AC power source 1, the pulse width data are called in sequence in one cycle period of a half wave, and generate PWM pulses which are applied to the gate of an IGBT 7a. When a load changes, a correction coefficient is calculated on the basis of a previously obtained calculation formula of each pulse, and the PWM pulses are generated after correction is performed by multiplying each of the pulse width by the correction coefficient. As a result, power-factor improvement and rectification are enabled while the problems caused by an analog circuit are avoided.

2. 发明专利

JP2000347753A SOLAR BATTERY CONTROLLER AND SOLAR POWER GENERATING DEVICE 失效
公开(公告)号：JP2000347753A
公开(公告)日：2000-12-15
申请号：JP16043599
申请日：1999-06-08
申请人： MITSUBISHI ELECTRIC CORP , KAKEI GAKUEN
发明人： IWAMOTO HIDEO , IIDA TAKAHIKO , RYU NOBUYUKI
IPC分类号： G05F1/67
摘要： PROBLEM TO BE SOLVED: To provide a solar power generating device having a maximum power point tracking function capable of accurately detecting a maximum power point even when the output power-output voltage characteristic of a solar battery has a plurality of peaks without making the output voltage and output power of the solar battery fluctuate needlessly. SOLUTION: An output power-output voltage characteristic detecting means CD1 provided with a solar battery PV1 having the same environmental condition as a main solar battery PV2 is provided apart from a main generation circuit. Then, an output voltage controlling means CT1 obtains the numerical data of the output power-output voltage characteristic of the battery PV1 for characteristic detection by turning a switch SW on or off and detects a maximum power point. Then, control signals S1a to S1d are given to respective transistors T1 to T4 of a voltage type inverter IV1 so that the main solar battery PV2 can generate a voltage value corresponding to the detected maximum power point.

3. 发明专利

JP2000270564A LINKING DEVICE 失效
公开(公告)号：JP2000270564A
公开(公告)日：2000-09-29
申请号：JP6823999
申请日：1999-03-15
申请人： MITSUBISHI ELECTRIC CORP , KAKEI GAKUEN
发明人： IWAMOTO HIDEO , IIDA TAKAHIKO
IPC分类号： H02J3/38 , G05F1/67 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To realize a DC-AC linking device of such structure that it can ground the DC side and AC side without using a transformer and that does not have many transistors and diodes. SOLUTION: This linking device adopts back boost type or back type of chopper circuits for inverters IV1 and IV2, and adopts transistors for power- synchronized switches SW1 and SW2. This gives a PWM signal to the transistor of the chopper circuit, converts the DC voltage generated by solar cells DC1 and DC2 into the one for positive or negative half wave of the AC voltage of an AC power source AC1, and outputs it from the AC output end of each inverter IV1 and IV2 alternately at every half cycle so as to let power flow in reverse. Additionally, the power-synchronized switches SW1 and SW2 severally take the roles of conducting the AC voltage for half wave generated by the invereters IV1 and IV2 synchronously with the AC cycle of the AC power source AC1 to the AC power source AC1, whereas when one inverter is operating, the other inverter is insulated from the AC power source AC1.

4. 发明专利

JPH0247105B2 失效
公开(公告)号：JPH0247105B2
公开(公告)日：1990-10-18
申请号：JP20225384
申请日：1984-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： HARADA HIROTSUGU , IIDA TAKAHIKO , IKEO HIROBUMI , HASHIZUME TSUNEO , FUKUSHIMA JIRO , TOSA MASANORI
IPC分类号： H01L21/56

5. 发明专利

JPS6178126A Resin sealing process for semiconductor device 失效
标题翻译：半导体器件的树脂密封工艺
公开(公告)号：JPS6178126A
公开(公告)日：1986-04-21
申请号：JP20225384
申请日：1984-09-25
申请人： Mitsubishi Electric Corp
发明人： HARADA HIROTSUGU , IIDA TAKAHIKO , IKEO HIROBUMI , HASHIZUME TSUNEO , FUKUSHIMA JIRO , TOSA MASANORI
IPC分类号： H01L21/56
CPC分类号： H01L21/56 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00014
摘要： PURPOSE:To ease up any stress concentration in the peripheral part by means of resin-sealing the central part and both ends of semiconductor chip in separate process. CONSTITUTION:The central part of LSI chip 3 is sealed by sealing resin 5a to be hardened. Next residual parts are sealed by sealing resin 5b to complete resin sealing process. Through these procedures, any stress caused by hardening process may be reduced remarkably since in case of resin-sealing a semiconductor chip, the central part and both ends are separately processed i.e. after sealing and hardening one part, the other parts are sealed.
摘要翻译：目的：通过在单独的工艺中树脂密封半导体芯片的中心部分和两端来缓解周边部分的任何应力集中。构成：LSI芯片3的中央部由密封树脂5a密封而硬化。接下来的残留部分通过密封树脂5b密封以完成树脂密封过程。通过这些程序，由于硬化处理引起的任何应力都可能显着降低，因为在树脂密封半导体芯片的情况下，中心部分和两端分别加工，即在密封和硬化一部分之后，其它部分被密封。

6. 发明专利

JPS536728A IGNITION CIRCUIT 失效
公开(公告)号：JPS536728A
公开(公告)日：1978-01-21
申请号：JP8120176
申请日：1976-07-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO , MORI SATOSHI
IPC分类号： F02P3/045 , F02P3/08 , H01L21/331 , H01L29/73
摘要： PURPOSE:To simplify ignition circuit by employing electrostatic inductive thyrista and to reduce electric loss at the circuit so that efficiency can be improved.

7. 发明专利

JPS6297358A RESIN SEALED TYPE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS6297358A
公开(公告)日：1987-05-06
申请号：JP23883985
申请日：1985-10-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO ISAMU , IIDA TAKAHIKO , ITO EIZO , SAWAMORI YUJI
IPC分类号： H01L23/28 , H01L23/29 , H01L23/495
摘要： PURPOSE:To make it possible to perform high speed switching, by making a distance between a specified inner lead and a heat sink, which are surrounded with resin, longer than a distance between another inner load and the heat sink. CONSTITUTION:A distance between a lead 3, which is to become an input and output pin, and a peripheral part 4a of a heat sink 4 is made longer than a distance between the lead 3 and a peripheral part 4b of the heat sink 4. Thus, electrostatic capacitance is made small. Since the distance between the inner lead and the heat sink, which are surrounded with resin, is made longer than the distance between the other inner lead and the heat sink, which are surrounded with said resin, switching of a resin sealed type semiconductor integrated circuit can be performed at a high speed.

8. 发明专利

JPS52144756A DC SWITCH 失效
公开(公告)号：JPS52144756A
公开(公告)日：1977-12-02
申请号：JP6187376
申请日：1976-05-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： IIDA TAKAHIKO
IPC分类号： H03K17/73 , H03K17/04
摘要： PURPOSE:To on-off control a load with a slight amount of power as well as to rapidly cut off the load current through a relatively simple circuit, by charging the charge accumulating method to a potential above the power supply voltage utilizing a reactor resonance.

9. 发明专利

JPS528779A SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JPS528779A
公开(公告)日：1977-01-22
申请号：JP8469175
申请日：1975-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAGINO HIROYASU , GAMOU HIROSHI , IIDA TAKAHIKO , IKEGAWA HIDEAKI
IPC分类号： H01L29/872 , H01L29/47
摘要： PURPOSE:To improve inverse overvoltage withstanding of Schottky diodes by providing a guard ring layer and having it absorb overvoltage on a preferential basis.

10. 发明专利

JPS528778A SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JPS528778A
公开(公告)日：1977-01-22
申请号：JP8468875
申请日：1975-07-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： GAMOU HIROSHI , IIDA TAKAHIKO , IKEGAWA HIDEAKI
IPC分类号： H01L29/872 , H01L29/47
摘要： PURPOSE:To obtain a Schottky barrier diode withstanding inversion voltage breakdown by giving and overvolatage absorption power to P-n junction which constitutes a guard ring.

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