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1. 发明专利

JPS6010791A SOLAR CELL 失效
公开(公告)号：JPS6010791A
公开(公告)日：1985-01-19
申请号：JP12072183
申请日：1983-06-30
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： TOMONARI SHIGEAKI , ABE TOSHIROU , TANAKA YOSHIMITSU , HOSOYA KIYOSHI , YAMAGUCHI SHIYUUICHIROU
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/18
摘要： PURPOSE:To prevent the breakdown of a P-N junction in a sintering process by forming a diffusion layer for an impurity under an electrode in depth deeper than other sections. CONSTITUTION:An oxide film 5 is formed on the surface of a P substrate 1, and windows 6 for shaping electrodes are formed to the surface of the oxide film by using electrode masks. An impurity is diffused through the windows 6, and N layers 2a are formed to the surface under the windows 6. The oxide film 5 of the whole surface is removed, and the impurity is diffused from the whole surface to form an N layer 2b to the whole surface of the surface section of the P substrate 1. The N layers 2a previously shaped project under the N layer 2b by the diffusion. Diffusion layers 2 positioned under the electrodes 4 are deepened automatically through the process. The windows 7 as sections to which the electrodes 4 are formed are removed, and an antireflection film 3 is shaped. Lastly, the electrodes 4 are formed on the layers 2 through the windows 7, and finished through a shintering process.

2. 发明专利

JPS6010790A FORMING METHOD FOR ELECTRODE OF SOLAR CELL 失效
公开(公告)号：JPS6010790A
公开(公告)日：1985-01-19
申请号：JP12071883
申请日：1983-06-30
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： TOMONARI SHIGEAKI , ABE TOSHIROU , TANAKA YOSHIMITSU , HOSOYA KIYOSHI , YAMAGUCHI SHIYUUICHIROU
IPC分类号： H01L31/04 , H01L31/0224
摘要： PURPOSE:To prevent the deterioration of characteristics due to the breakdown of a P-N junction during a sintering process by masking the N layer side with an oxide film, etc. and forming an electrode on the P layer side prior to others. CONSTITUTION:An oxide film 10 is formed on the surface on the N layer 2 side through a CVD method, etc., and only the P layer 3 side is plated with nickel, etc. while using the oxide film 10 as a mask. The oxide film 10 is removed by buffer fluoric acid, etc. Nickel electrodes 4, 8 are formed through primary plating by electroless plating of nickel and a sintering and secondary plating by electroless plating of nickel. The electrode 8 on the P side difficult to be plated is formed prior to others, and the electrodes 4 on the N side are shaped, thus preventing the exfoliation of the P side electrode 8.

3. 发明专利

JPS59105380A Photosensitive solid-state oscillation element 失效
标题翻译：光敏固体振荡元件
公开(公告)号：JPS59105380A
公开(公告)日：1984-06-18
申请号：JP21488682
申请日：1982-12-08
申请人： Matsushita Electric Works Ltd , Matsushita Electronics Corp
发明人： YAMATO TOSHIYA , KONNO TOSHIMITSU , NAGATO YUKIHARU , KANEKO CHIYUUKEI , ABE TOSHIROU
IPC分类号： H01L31/10 , H01L31/0236 , H01L31/111
CPC分类号： H01L31/0236 , H01L31/111 , Y02E10/50
摘要： PURPOSE:To increase the substantial photo receiving area and reduce the chip area by a method wherein the photo receiving surface of a photosensitive solid- state oscillation element which operates by oscillation by light irradiation is formed into wave form or uneven form. CONSTITUTION:The photo receiving area is increased by changing the surfaces of an N type grown layer 2 and a P type diffused layer 3, i.e., the photo receiving surface of the photosensitive solid-state oscillation element into a wave form. The form of this photo receiving surface can be in irregular unevenness. From the point that the photo receiving area increases, the light reaching the photo receiving surface from a light source is well absorbed to the surface, photosensitivity more improves than in the case that the photo receiving surface is a plane, and the oscillation is disclosed with a small amount of light. On the other hand, if the amount of light is the same, the element oscillates at a high frequency.
摘要翻译：目的：通过其中通过光照射的振荡操作的光敏固态振荡元件的光接收表面形成波形或不均匀形式的方法来增加实质的光接收面积并减小芯片面积。构成：通过将N型生长层2和P型扩散层3的表面，即光敏固体振荡元件的光接收表面改变成波形来增加光接收面积。这种照片接收表面的形式可以是不规则的不均匀性。从光接收面积增加的角度来看，从光源到达光接收表面的光被表面吸收良好，光敏性比在光接收面是平面的情况下更加改善，并且振荡被公开于少量的光。另一方面，如果光量相同，则元件以高频率振荡。

4. 发明专利

JPS5923571A Solar battery 失效
标题翻译：太阳能电池
公开(公告)号：JPS5923571A
公开(公告)日：1984-02-07
申请号：JP13305982
申请日：1982-07-29
申请人： Matsushita Electric Works Ltd
发明人： TOMONARI SHIGEAKI , ABE TOSHIROU , HOSOYA KIYOSHI
IPC分类号： H01L31/042 , H01L27/142
CPC分类号： H01L31/0475 , Y02E10/50
摘要： PURPOSE:To obtain a high superhigh voltage in a solar battery by forming P-N junctions in insular regions which are isolated into a plurality in a chip and connecting them in series with each other. CONSTITUTION:An N type epitaxial layer 3 is divided into a plurality on a P type Si substrate 2, and a P type layer 5 is formed in the layer 3. The adjacent layer 3 and the layer 5 are sequentially connected in series by aluminum deposited wirings 6, and an SiO2 reflection preventive film is attached to the surface. According to this structure, high supervoltage can be obtained, the decrease in size can be facilitated, and it is effective in practical use as a microminiature power source.
摘要翻译：目的：为了在太阳能电池中获得高超高电压，通过在岛内形成P-N结，将其分离成多个芯片并将它们彼此串联连接。构成：N型外延层3在P型Si衬底2上被分成多个，并且在层3中形成P型层5.相邻层3和层5依次串联连接铝沉积布线6，并且SiO 2反射防止膜附着在表面上。根据该结构，可以获得高的超级电压，可以促进尺寸的减小，并且在作为微型电源的实际应用中是有效的。

5. 发明专利

JPS5553467A PHOTOSENSITIVE OSCILLATION ELEMENT 失效
公开(公告)号：JPS5553467A
公开(公告)日：1980-04-18
申请号：JP12665778
申请日：1978-10-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , IITAKA YUKIO
IPC分类号： H01L29/66 , H01L31/10 , H03K3/35 , H03K3/352
摘要： PURPOSE:To obtain large ocillation pulse electric current by partially burrying n - layer into n-layer on p-layer and thereafter providing p-layer on upper partial part of n-layer and n -layer on this layer and n-layer for ohmic electrode on other part. CONSTITUTION:Load R and direct current power source Va are connected between n -layer 5 and n-layer 6 and light is applied thereto and then positive hole is entered from layers 2, 3 to raise electric potential up to same or slightly higher of the level of the layer 6. While, by applying the light junction J1 of SCR construction of the layers 1-2-45 is electrically connected and electirc current flows to element. Thus, electric potential is rapidly lowered to lower than the layer 3 and junction J2 become inverse bias and electric current of SCR construction is stopped. However, in junction J1 current I1 of the layer 2 and current I2 of the layer 3 are flowed as pulse current and become off by extinction of excess carrier near junction J1. By applying of light the layer 1 becomes again high electric potential and the element becomes on and maintain ocillation. If the light L is strong, oscillation flequency is high. By this construction, the sum of the currents of n-layer 2 and n -layer 3 can take out pulse current largely.

6. 发明专利

JPS54136286A PHOTO SENSITIVE SWITCHING ELEMENT 失效
公开(公告)号：JPS54136286A
公开(公告)日：1979-10-23
申请号：JP4435978
申请日：1978-04-14
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU , IITAKA YUKIO
IPC分类号： H03K17/78 , H01L27/14 , H01L29/74 , H01L31/10
摘要： PURPOSE:To switch DC greater current with the optical signal of small input, by forming the two P type regions at the N type semiconductor substrate, providing the N type region in one region, and constituting solar cell, thyristor and transistor, through the selective use of them. CONSTITUTION:In the N type Si substrate, the P type regions 2 and 5 are formed by diffusion, the N type region 3 is placed in the region 2 to constitute the transversal thyristor with the regions 1, 2 and 3. Further, transistor is constituted with the regions 1, 2 and 3 and the solar cell is constituted with the regions 5 and 1. Further, on the regions 3, 1 and 5, electrodes 6, 7 and 8 are placed, and the voltage of positive polarity is applied to the electrode 7 and the voltage Va of negative polarity is fed to the electrode 6. The resistor R1 is connected between the electrodes 7 and 8, and the negative resistor RL is connected between the electrode 7 and the positive pole of the voltage Va. The photo sensitive switching element 9 is thus constituted and light L is radiated on this surface. Thus, it enables switching of great current with optical signal.

7. 发明专利

JPS5412482A OPTICAL RELAY 失效
公开(公告)号：JPS5412482A
公开(公告)日：1979-01-30
申请号：JP7880177
申请日：1977-06-30
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H03K17/78 , H01H35/00

8. 发明专利

JPS5355951A ZERO VOLTAGE SWITCH CIRCUIT 失效
公开(公告)号：JPS5355951A
公开(公告)日：1978-05-20
申请号：JP13098776
申请日：1976-10-29
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： IITAKA YUKIO , ABE TOSHIROU
IPC分类号： H02M1/08 , H03K17/13
摘要： PURPOSE:To reduce the dark current as well as to simplify the circuit constitution by controlling the one-way 3/terminal thyristor, which controls the two-way 3-terminal thyristor which controls the current flowing to the load, directly by a light sensor solid state oscillation element.

9. 发明专利

JPS5321560A DATA TRANSMISSIONNMODULATION EQUIPMENT 失效
公开(公告)号：JPS5321560A
公开(公告)日：1978-02-28
申请号：JP9637876
申请日：1976-08-11
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ABE TOSHIROU
IPC分类号： H04L27/12 , H03C3/02
摘要： PURPOSE:In a data transmission-modulation equipment, the quality of light incident upon a light sensing solid oscillation element is varied in order to performs frequency modulation, so that highly-accurate data transmission will be done without influence due to the disturbance of a carrier circuit.

10. 发明专利

JPS6094737A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6094737A
公开(公告)日：1985-05-27
申请号：JP20347483
申请日：1983-10-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： TANAKA YOSHIMITSU , ABE TOSHIROU , TOMONARI SHIGEAKI , YAMAGUCHI SHIYUUICHIROU , HOSOYA KIYOSHI
IPC分类号： H01L29/04 , H01L21/316 , H01L21/76 , H01L21/762 , H01L27/00
摘要： PURPOSE:To isolate N type regions by insulation without generating strains in a P type Si substrate by a method wherein the substrate with the N type regions formed at several parts of both surfaces is changed into the state of porous Si from both surfaces to a depth over the forming depth of the N type region, and thereafter the porous Si part is turned to Si dioxide on oxidizing treatment. CONSTITUTION:The N type regions 12 are formed by N type diffusion to the Si substrate 10 with N type buried layers 11 formed inside at the element-forming sections of both surfaces, respectively. Si nitride films 14 are formed on the surfaces of these N type regions and on the front and back surfaces of the part 13 serving as a connection path inside the substrate. Next, this substrate is contained in a container 16 filled with a hydrofluoric solution 15, and electrodes 17 are made opposed on both sides; then, the front and back layers of the substrate are changed into the porous Si parts 18 by passing current between the substrate and the electrodes. After removal of the Si nitride films, these Si parts 18 are turned to the Si dioxide parts 18' on heat oxidation.

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