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1. 发明专利

JP2005142471A Device, method and system for vacuum processing 有权
标题翻译：用于真空处理的装置，方法和系统
公开(公告)号：JP2005142471A
公开(公告)日：2005-06-02
申请号：JP2003379607
申请日：2003-11-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKIZAWA TAKAHIRO , SUEMITSU TOSHIYUKI , OKUDA AKIRA
IPC分类号： B65G49/00 , B65G49/07 , C23C14/56 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing device and a vacuum processing system which flexibly and easily respond to a change in process and a change in a kind of products manufactured. SOLUTION: A processing chamber casing 2 is adapted such that a substrate 1 is held on a holding face for the substrate 1 of an lower side vessel of which holding face is on an upper surface of a processing chamber casing, then an upper side vessel is brought into contact with the lower side vessel, by which its internal space in which the substrate 1 is held is sealed, after which vacuum pumping of the internal space is performed, and a substrate holding vessel 10 is formed. The processing chamber casing 2 includes a first space S1 and a second space S2 arranged so that the first space S1 and an outside of the vacuum processing device 100 may be connected communicatively. In the casing constituted as above, the substrate holding vessel 10 is interposed and arranged in the second space S2 that is in such a state as communicative connection with the first space S1 is interrupted, then the pressure of the second space S2 is adjusted, by which the sealing of the substrate holding vessel 10 is relieved, and the substrate 1 and the lower side vessel are integrally moved to a processing position to perform processing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种真空处理装置和真空处理系统，其灵活地并且容易地响应于工艺的变化和所制造的产品的种类的变化。解决方案：处理室壳体2适于使得基板1被保持在用于保持面位于处理室壳体的上表面上的下侧容器的基板1的保持面上，然后上部侧面容器与下侧容器接触，通过该下侧容器密封保持基板1的内部空间，之后进行内部空间的真空泵送，形成基板保持容器10。处理室壳体2包括第一空间S1和第二空间S2，其布置成使得第一空间S1和真空处理装置100的外部可以连通地连接。在如上构成的壳体中，基板保持容器10插入并配置在与第一空间S1的通信连接中断的状态下的第二空间S2中，第二空间S2的压力通过基板保持容器10的密封被释放，并且基板1和下侧容器一体地移动到处理位置以进行处理。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2008121038A Apparatus for applying patterning film and vacuum deposition apparatus 有权
标题翻译：用于涂布图案和真空沉积装置的装置
公开(公告)号：JP2008121038A
公开(公告)日：2008-05-29
申请号：JP2006303762
申请日：2006-11-09
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAKATANI SHUHEI , OKAMOTO TADASHI , MORIYAMA JUN , SUEMITSU TOSHIYUKI
IPC分类号： C23C14/04 , C23C14/24 , H01G4/015 , H01G4/18 , H01G13/00
摘要： PROBLEM TO BE SOLVED: To manufacture a plate for forming an oil film by using a rigid material and to constitute the whole of an apparatus for applying patterning films with a rigid material so as to enhance the durability and to continuously form various oil masking patterns stably.
SOLUTION: The apparatus for applying patterning films is equipped with: an inner pipe 2 having an opening part 6 for passing oil vaporized for forming a patterning film in the inner pipe 2; an outer pipe frame 10 which is provided to cover the outer periphery of the inner pipe 2 and in which opening parts 7 are provided; and rigid nozzle plates 4 which are provided so as to be each superposed with respective opening parts 7 of the outer pipe frame 10 and each have a through-hole group 9 comprising a plurality of through-holes 5 for spraying vaporized oil. The shape or alignment pattern of the through-holes 5 constituting the through-hole group 9 is made different in each rigid nozzle plate 4.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用刚性材料制造用于形成油膜的板，并且构成用刚性材料施加图案形成膜的装置的整体，以提高耐久性并连续地形成各种油屏蔽图案稳定。解决方案：用于施加图案形成膜的装置装备有内管2，内管2具有用于使在内管2中形成图案化膜的油蒸发的油的开口部6; 外管框架10，其设置成覆盖内管2的外周，并且设置有开口部7; 和刚性喷嘴板4，其设置成与外管框架10的相应开口部分7重叠，并且每个具有通孔组9，该通孔组9包括用于喷射汽化油的多个通孔5。构成通孔组9的通孔5的形状或对准图形在每个刚性喷嘴板4中形成不同。（C）版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005246667A Method and apparatus for cleaning mold, molding method and molding machine 有权
标题翻译：清洁模具，成型方法和成型机的方法和装置
公开(公告)号：JP2005246667A
公开(公告)日：2005-09-15
申请号：JP2004057219
申请日：2004-03-02
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUMURA TOMOHIRO , SAITO MITSUHISA , TAKAGI KIYOHIKO , MORI SATOSHI , SUEMITSU TOSHIYUKI
IPC分类号： H05H1/24 , B08B7/00 , B08B9/08 , B29C33/72 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To provide a mold cleaning method large in cleaning cycle, extending the life of a mold and simply cleaning the mold in a short time, a mold cleaning apparatus, a molding method having long maintenance cycle and a molding machine therefor. SOLUTION: The mold 2 is placed on a receiving stand 1 and an electrode 4 having a gas jet orifice 3 is provided in opposed relation to the receiving stand 1. The electrode 4 is allowed to approach the molding surface 5 of the mold 2. Gas is supplied to a gas flow channel 6 provided in the electrode 4 under pressure near to atmospheric pressure to communicate with the gas jet orifice 3 from the gas supply device 7 to be sprayed on the molding surface 5 from the gas jet orifice 3. Plasma 9 is produced between the mold 2 and the electrode 4 by applying a high frequency voltage to the receiving stand 1 from a power supply 8. Active particles formed in the plasma 9 are reacted with the contaminant on the molding surface to remove the contaminant to clean the mold. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供清洁循环大的模具清洁方法，延长模具的使用寿命并且在短时间内简单地清洁模具，模具清洁装置，具有长维护周期的成型方法和成型机器。解决方案：将模具2放置在接收台1上，并且具有气体喷射孔3的电极4以与接收台1相对的关系设置。电极4被允许接近模具的模制表面5 将气体供给到设置在电极4中的压力接近大气压的气体流路6，与气体供给装置7的气体喷射孔3连通，从喷气口3喷射到成形面5上通过从电源8向接收台1施加高频电压，在模具2和电极4之间产生等离子体9.在等离子体9中形成的活性颗粒与成型表面上的污染物反应以除去污染物清洁模具。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2006161095A Film deposition apparatus and film deposition method 有权
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：JP2006161095A
公开(公告)日：2006-06-22
申请号：JP2004353466
申请日：2004-12-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORI SATOSHI , SUEMITSU TOSHIYUKI , NAKAJIMA SEIJI , OKUMA TAKAFUMI , YAMANISHI HITOSHI
IPC分类号： C23C14/56
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which enable pre-treatment such as pre-sputtering in a vacuum vessel to be performed without arranging complicated shutter mechanism.
SOLUTION: The film deposition apparatus performs film deposition in such a manner that a plurality of trays 4 are shifted in order to each of the plurality of vacuum vessels 1 connected in series and film-depositing treatment is applied to a work 6 held with the tray 4 in each vacuum vessel 1, wherein each of the plurality of trays 4 has constitution having, in at least the end parts, projecting parts 10 functioning as blocking parts for holding a prescribed atmosphere in the vacuum vessel 1 with conductance by blocking opening holes 2a disposed at both end parts of the vessel so as to leave a gap permissible to pass the tray 4 itself therethrough when the tray is set at a prescribed film-depositing position in each vacuum vessel 1. Some trays among the plurality of trays 4 are used as dummy trays 4b which do not convey the work 6, and the pre-deposition treatment is performed in the vacuum vessel 1 into which the dummy tray 4b is shifted. The individual atmosphere can be held in each vacuum vessel 1 by hermetically sealing the vacuum vessel with the tray 4 itself functioning as the shut-off means.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在真空容器内进行诸如预溅射之类的预处理而不设置复杂的快门机构的成膜装置和成膜方法。＆lt; P＆gt;解决方案：成膜装置以这样的方式进行成膜沉积，使得多个托盘4按顺序连接的多个真空容器1中的每一个移动，并且将成膜处理应用于保持的工件6 托盘4在每个真空容器1中，其中多个托盘4中的每一个具有在至少端部中具有作为阻挡部分的突出部分10的构造，其用于在真空容器1中保持规定的气氛，通过阻塞传导当托盘被设置在每个真空容器1中规定的成膜位置时，设置在容器的两个端部处的开孔2a以便留下允许托盘4自身通过的间隙。多个托盘中的一些托盘 4用作不传送工件6的虚拟托盘4b，并且在虚拟托盘4b移位到的真空容器1中执行预沉积处理。通过用作为切断装置的托盘4本身密封真空容器，可以将各个气氛保持在每个真空容器1中。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006040743A Plasma processing method and plasma processing device 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：JP2006040743A
公开(公告)日：2006-02-09
申请号：JP2004219730
申请日：2004-07-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TAKAGI KIYOHIKO , OKUMURA TOMOHIRO , SAITO MITSUHISA , MORI SATOSHI , SUEMITSU TOSHIYUKI
IPC分类号： H05H1/24 , B08B7/00 , C30B33/12 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device capable of correctly processing only a part to be processed of an indented irregular shaped substance in a short time. SOLUTION: The substance to be processed 209 is placed on a second electrode 202 arranged at a position facing a plasma source having a first electrode 201 with the substance to be processed interposed in between. A sealing member 214 closely contacts a whole peripheral part of the substance to be processed by pulling down the plasma source 211 jointed to a cylindrical container 212 made of acrylic resin, and a prescribed distance is kept between the plasma source and the substance to be processed. In the above state, pressure in a container is reduced by exhausting from an exhaustion port 215 by an exhausting device 216, and the first electrode 201 is grounded while supplying mixed gas of He and O 2 with a prescribed flow volume from a gas supply port 205 through a gas supply device 207 and a gas piping 206. The surface of the substance to be processed can be processed by generating plasma by supplying a power to the second electrode 202 from a high-frequency power source 204. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够在短时间内正确地仅处理凹陷的不规则形状的物质的待处理部分的等离子体处理方法和等离子体处理装置。解决方案：要处理的物质209被放置在布置在面对具有第一电极201的等离子体源的位置的第二电极202上，待处理物质介于其间。密封构件214通过拉下连接到由丙烯酸树脂制成的圆筒形容器212的等离子体源211紧密接触待加工物质的整个周边部分，并且在等离子体源和待处理物质之间保持规定的距离。在上述状态下，通过排气装置216从排气口215排出，容器内的压力降低，第一电极201接地，同时供给规定的He和O 2 的混合气体来自气体供给口205的通过气体供给装置207和气体管道206的流量。可以通过从高频电源向第二电极202提供电力来产生等离子体来处理被处理物质的表面 204.版权所有（C）2006年，JPO＆NCIPI

6. 发明专利

JP2004124171A Plasma processing apparatus and method 审中-公开
公开(公告)号：JP2004124171A
公开(公告)日：2004-04-22
申请号：JP2002290081
申请日：2002-10-02
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SAITO MITSUHISA , AOKURA ISAMU , YAMANISHI HITOSHI , SUEMITSU TOSHIYUKI , KIMURA TADASHI , OKUMURA TOMOHIRO , HAYATA HIROSHI , YASHIRO YOICHIRO
IPC分类号： B01J3/00 , B01J19/08 , C23C14/35
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and method in which double erosion is formed and non-erosion regions is hardly produced.
SOLUTION: The plasma processing apparatus is provided with a vacuum vessel which can maintain a vacuum, a gas supply and exhaust device which exhausts gas while supplying the gas into the vacuum vessel, a cathode electrode which exists in the vacuum vessel and is provided with a target, a substrate electrode which is disposed opposite to the target and can be placed with the substrate, and a power supply device which applies high-frequency electric power to the cathode electrode. The apparatus is provided with a plurality of annular magnets on the periphery of the substrate electrode and is provided with a cathode magnet of an annular or cylindrical shape in the position facing the cathode electrode across the target. Thereby double erosion is formed and the non-erosion regions is hardly produced on the target.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2008280550A Opposing target sputtering apparatus and method 有权
标题翻译：对策目标喷射装置和方法
公开(公告)号：JP2008280550A
公开(公告)日：2008-11-20
申请号：JP2007123182
申请日：2007-05-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUDA AKIRA , SUEMITSU TOSHIYUKI
IPC分类号： C23C14/34 , C23C14/35 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide an opposing target sputtering apparatus capble of improving production yield.
SOLUTION: The opposing target sputtering apparatus is equipped with: a vacuum tank capable of being maintained in a vacuum state; a substrate holder which is arranged in the vacuum tank and on which substrates are mounted; target holders for each placing a target provided opposite to the substrate holder thereon; magnets which are each arranged on the opposite side of the surface for placing the target thereon of the target holder; a sputtering power source for applying a direct current power source to each target holder; and a gas supply and exhaust means for introducing a gas into the vacuum tank or exhausting the gas, wherein each magnet has a rectangular-ring shape and the central axis in the longitudinal direction of each magnet is inclined with respect to the central axis in the longitudinal direction of each target holder.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高产量的相对靶靶溅射装置。解决方案：相对靶溅射装置装备有能够保持在真空状态的真空罐; 衬底保持器，其布置在真空罐中并且其上安装有衬底; 每个放置与基板保持器相对设置的目标的目标支架; 磁体，其各自布置在所述表面的相对侧上，用于将目标物体放置在其上; 用于将直流电源施加到每个目标保持器的溅射电源; 以及用于将气体引入真空罐或排出气体的气体供给和排气装置，其中每个磁体具有矩形环形状，并且每个磁体的纵向方向上的中心轴线相对于中心轴线倾斜每个目标支架的纵向。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006176861A Vacuum thin film system 有权
标题翻译：真空薄膜系统
公开(公告)号：JP2006176861A
公开(公告)日：2006-07-06
申请号：JP2004373672
申请日：2004-12-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORI TATSUYUKI , SUEMITSU TOSHIYUKI , YAMANISHI HITOSHI , NAKAJIMA SEIJI , OKUMA TAKAFUMI
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vacuum thin film system provided with a function of dividing a fixed space into individual spaces where a plurality of treatments can be performed by a simple structure without using a gate valve, and further, capable of performing the maintenance of dust and stuck matter without performing atmospheric opening.
SOLUTION: A tray 104 of carrying a substrate 105 is provided with a tray diaphragm 201, a vessel side diaphragm 202 and a tray sticking-preventive board 301, and, a vacuum vessel 101 is divided into individual spaces by carrying, thus the space in the vicinity of each treatment source 102 can be formed into a treatment space 203 with a simple structure.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种真空薄膜系统，其具有将固定空间分割成可以通过简单的结构执行多个处理而不使用闸阀的单个空间的功能，并且还能够在不进行大气开放的情况下进行灰尘和卡住物的维护。搬运基板105的托盘104设置有托盘隔膜201，容器侧隔膜202和托盘防粘板301，并且通过承载将真空容器101分割为各个空间，因此每个处理源102附近的空间可以以简单的结构形成处理空间203。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2001040474A PLASMA TREATING METHOD AND ITS DEVICE 失效
公开(公告)号：JP2001040474A
公开(公告)日：2001-02-13
申请号：JP21296199
申请日：1999-07-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SUEMITSU TOSHIYUKI , MORI TATSUYUKI , YOKOYAMA MASAHIDE
IPC分类号： H01L21/302 , C23C14/34 , C23C16/503 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve the uniformity of the film thickness in a substrate, as to a holder in a vacuum vessel holding the substrate to be surface-treated by providing the circumferential part of the substrate with blow-off ports for plasma generating gas. SOLUTION: A rotary holder 8 holding a substrate 5 and capable of rotation is provided, also, preferably, the circumferential part of the substrate 5 is uniformly deposited with plural blow-off ports 11a, 11b, 11c and 11d for plasma generating gas, and the circumference of the substrate 5 fitted to the rotary holder 8 drived by a motor 9 is provided with blow-off ports 11a, 11b, 11c and 11d. The surface of the axial center of a base edge part 12 extensionally provided on the outer part of a vacuum vessel 1 and fitted with a gear 10 is provided with a gas introducing port 13. Plasma generating gas introduced from the gas introducing port 13 is jetted from the blow-off ports 11a, 11b, 11c and 11d uniformly arranged on the circumferential part of the substrate 5 to the inside of the vacuum vessel 1. The sputtering device improves the uniformity of the film thickness in the substrate face.

10. 发明专利

JP2000017435A MAGNETRON SPUTTERING METHOD AND ITS APPARATUS 失效
公开(公告)号：JP2000017435A
公开(公告)日：2000-01-18
申请号：JP18841998
申请日：1998-07-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMAMOTO MASAHIRO , YOKOYAMA MASAHIDE , SUEMITSU TOSHIYUKI , MORI TATSUYUKI
IPC分类号： C23C14/35 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To suppress the temp. elevation of a substrate in magnetron sputtering. SOLUTION: The inner periphery and outer periphery of a substrate 6 are provided with substrate side magnets 15 having different magnetic poles. The inner peripheral magnets 10, 11 and outer peripheral side magnets 12 of these substrate side magnets 15 are so disposed that the magnetic poles of the inner peripheral magnets 10, 11 have the relations that the same poles as the magnetic poles of the magnets 3a arranged on the target inner side of the magnetron magnets 3 face each other across the target 2 and that the magnetic poles of the outer peripheral magnets 12 have the relations of the same poles as the magnetic poles of the magnets 3b arranged on the target outer side of the magnetron magnets 3 face each other across the target 2 or face the outer side of the substrate 6, by which the arrival of the magnetic lines of force crossing the target 2 at the substrate is averted and the collision of the electrons or ions against the substrate is prevent.

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