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1. 发明专利

JP2005249644A Pressure sensor device, and circuit and system using the same 审中-公开
标题翻译：压力传感器装置，以及使用其的电路和系统
公开(公告)号：JP2005249644A
公开(公告)日：2005-09-15
申请号：JP2004061958
申请日：2004-03-05
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TOYODA KENJI , MORIMOTO TADASHI
IPC分类号： G01L1/16 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To solve a problem wherein a flexible printed circuit board is joined to an Si substrate and the Si substrate is required to be worked, to require thereby a complicated process, since manufactured using the Si substrate in conventional constitution.
SOLUTION: This pressure sensor device 11 of the present invention is easy to manufacture, because constituted of an organic FET on the flexible printed circuit board. In concretely saying, the organic FET is constituted of an organic semiconductor layer 2, an insulating layer 5, a gate 6, a drain 3 and a source 4, the organic semiconductor layer 2 is formed of a π-conjugated polymer, the insulating layer 5 is formed of an organic insulating material, and a piezoelectric material of a piezoelectric polymer layer 7 is connected electrically to the gate 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决问题：为了解决柔性印刷电路板与Si衬底接合并且Si衬底需要加工的问题，因此需要复杂的工艺，由于使用常规构造中的Si衬底制造。解决方案：由于柔性印刷电路板上的有机FET构成，本发明的压力传感器装置11容易制造。具体地说，有机FET由有机半导体层2，绝缘层5，栅极6，漏极3和源极4构成，有机半导体层2由π共轭聚合物形成，绝缘层 5由有机绝缘材料形成，并且压电聚合物层7的压电材料电连接到栅极6.版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004241535A Resistance varying element and method of manufacturing it 审中-公开
公开(公告)号：JP2004241535A
公开(公告)日：2004-08-26
申请号：JP2003028014
申请日：2003-02-05
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MIYAMOTO AKITO , MORIMOTO TADASHI , TANAKA HIDEYUKI
IPC分类号： H01L27/10 , H01L27/105 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To provide a resistance varying element superior in reliability for suppressing variation in the characteristic of a resistance varying element using a phase varying material for recording layer, and to provide a method of manufacturing it. SOLUTION: The resistance varying element has a first electrode 3, and a dielectric layer 4 and a recording layer 7 with a contact hole 5 formed over them provided on a substrate 1. The recording layer 7 is sandwiched by the first electrode 3 and a second electrode 8. A resistance value of the layer 7 is varied by an electrical pulse impressed between the electrode 3 and the electrode 8. A contact layer 6 of the recording layer is formed between the dielectric layer 4 and the recording layer 7. The contact layer 6 is preferably formed by group 2-6 semiconductor (e.g. ZnS) and preferably includes SiO 2 . COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2003069417A Semiconductor device and its drive method 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：JP2003069417A
公开(公告)日：2003-03-07
申请号：JP2001252754
申请日：2001-08-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SORADA HARUYUKI , MORIMOTO TADASHI , MORITA KIYOYUKI
IPC分类号： G11C11/38 , H01L27/10 , H03K19/0944
CPC分类号： G11C2211/5614
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device acting like a memory cell employing a negative resistive element operated at a high-speed even under a low voltage and to provide its drive method.
SOLUTION: The semiconductor device includes a series connection comprising two IBTDs 12, 13 and a DTMOS whose source electrode is connected to a memory node 17 between the IBTDs 12 and 13 and whose drain electrode is connected to a bit line 15. Since the gate and the body region of the DTMOS for controlling data input output are connected to a word line 16, even when a gate voltage of the DTMOS is low at data input output, the drain current is increased more than that of a conventional semiconductor device to deliver data at a higher speed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种半导体器件，其作用就像使用即使在低电压下高速工作的负电阻元件的存储单元，并提供其驱动方法。解决方案：半导体器件包括串联连接，其包括两个IBTD 12,13和一个DTMOS，其源电极连接到IBTD12和13之间的存储器节点17，其漏电极连接到位线15.由于门和用于控制数据输入输出的DTMOS的主体区域连接到字线16，即使在数据输入输出端的DTMOS的栅极电压低时，漏极电流比传统半导体器件的栅极电压增加更多，以传送数据以更高的速度。

4. 发明专利

JP2004146500A Thin film processing method 审中-公开
公开(公告)号：JP2004146500A
公开(公告)日：2004-05-20
申请号：JP2002308226
申请日：2002-10-23
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MIYAMOTO AKITO , MORIMOTO TADASHI , TANAKA HIDEYUKI
IPC分类号： H01L21/3065 , H01L27/10 , H01L27/105 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To provide a method for processing a phase change layer, particularly a thin-film layer containing a chalcogen element, for manufacturing a phase change memory device.
SOLUTION: In this reactive etching method for a compound layer containing at least one chalcogen element, the reactive gas is selected from a group consisting of gases each containing at least one kind of fluorine-based gas.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004143524A Method for producing columnar electroconductor group 审中-公开
公开(公告)号：JP2004143524A
公开(公告)日：2004-05-20
申请号：JP2002309334
申请日：2002-10-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA HIDEYUKI , MORIMOTO TADASHI
IPC分类号： C25D7/12 , C25D5/02 , H01B5/16 , H01B13/00 , H01R43/00
摘要： PROBLEM TO BE SOLVED: To reduce ruggedness on the surface of a substrate with a columnar electroconductor group buried in the method for producing the columnar electroconductor group applied for various electric apparatuses. SOLUTION: A porous film having a plurality of through holes vertically to the surface and a smooth electroconductive substrate are thermally stuck, and, with the electroconductive substrate as the cathode, a metal is filled inside the holes by an electroplating method. After the completion of the plating, the thermally stuck film and electroconductive substrate are separated, so that the columnar electroconductor group having reduced ruggedness on the surface of the substrate can be obtained. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003347440A Semiconductor element 审中-公开
标题翻译：半导体元件
公开(公告)号：JP2003347440A
公开(公告)日：2003-12-05
申请号：JP2003147307
申请日：2003-05-26
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YOSHII SHIGEO , MORIMOTO TADASHI , MORITA KIYOYUKI , SORADA HARUYUKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable and easy-to-manufacture semiconductor element. SOLUTION: The ratio of Ge in the composition of SiGe fine particles 1124 increases continuously from a position contiguous to a p-type silicon substrate 1121 toward a position contiguous to an SiO 2 film 1126. The band gap decreases in the order of silicon fine particles A, silicon fine particles B, silicon fine particles C, and silicon fine particles D. At the same time, electron affinity increases and the sum of the electron affinity and the band gap decreases. Consequently, the barrier height between respective particles in the charge retaining area decreases as the distance to the semiconductor substrate decreases. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供高可靠性和易于制造的半导体元件。解决方案：SiGe微粒1124的组成中的Ge的比例从与p型硅衬底1121相邻的位置朝向与SiO 2 SBS膜1126相邻的位置连续地增加。硅微细颗粒A，硅微粒B，硅微粒C和硅微粒D的数量级的带隙减小。同时，电子亲和力增加，电子亲和力和带隙之和减小。因此，随着与半导体基板的距离减小，电荷保持区域中的各个颗粒之间的势垒高度减小。版权所有（C）2004，JPO

7. 发明专利

JP2003078128A Quantum effect element 审中-公开
标题翻译：量子效应元素
公开(公告)号：JP2003078128A
公开(公告)日：2003-03-14
申请号：JP2002205166
申请日：2002-07-15
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORITA KIYOYUKI , MORIMOTO TADASHI , ARAKI SEI , HIRAI YOSHIHIKO , YUKI KOICHIRO
IPC分类号： H01L29/06 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/66 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide such a quantum effect element that is extremely small in element occupation area and low in power consumption. SOLUTION: A silicon island 11a is formed in a quantum thin line 11 made of silicon while it is pinched by a pair of tunnel barriers 12 made of silicon oxide film. A gate electrode 14 for controlling potential is provided on the side of the silicon island 11a with a gate insulation film 13 made of interposed silicon oxide film, and a control electrode 16 for controlling potential is provided on the other side thereof with an insulation film 15 made of interposed silicon oxide film. The tunnel barrier 12 has such a quantum thin line constriction structure that a silicon oxide film 17 as an electric boundary supporting oxide film formed using an interatomic force microscope or the like is formed by oxidizing the quantum thin line from its surface to its nearly central part.
摘要翻译：要解决的问题：提供在元件占用面积极小并且功耗低的量子效应元件。解决方案：由硅制成的量子细线11形成硅岛11a，同时被硅氧化膜制成的一对隧道势垒12夹持。在硅岛11a侧设置用于控制电位的栅电极14，其中由具有由硅氧化膜构成的栅极绝缘膜13，并且在另一侧上设置用于控制电位的控制电极16，该隔离膜15具有绝缘膜15 由插入的氧化硅膜制成。隧道势垒12具有这样的量子薄线收缩结构，即通过使用原子力显微镜等形成的作为形成电边界的氧化膜的氧化硅膜17通过将量子细线从表面氧化成其近似中心部分而形成。

8. 发明专利

JP2003057110A Infrared sensor device 审中-公开
标题翻译：红外传感器设备
公开(公告)号：JP2003057110A
公开(公告)日：2003-02-26
申请号：JP2001243394
申请日：2001-08-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORITA KIYOYUKI , KOBUCHI HIROTO , MORIMOTO TADASHI , SORADA HARUYUKI
IPC分类号： G01J1/02 , G01J5/02 , G01J5/20 , G01J5/48 , H01L27/14 , H01L31/10 , H03K17/945 , H04N5/33
摘要： PROBLEM TO BE SOLVED: To provide a non-cooling low power consumption type infrared sensor.
SOLUTION: The infrared sensor device is provided with a first tunnel element 101 and a second tunnel element 102 connected in series to each other by way of an SN node N104, and an MOS transistor 107 whose gate is connected to the SN node N104. When infrared light 108 is cast on the first tunnel element 101, the number of stable crossing of the voltage-current characteristic of the first tunnel element 101 and the voltage-current characteristic of the first tunnel element 102 varies and thus, yes/no of infrared irradiation is detected. Instead of the first tunnel element that infrared is cast, a resistor element or normal diode element can be used. By utilizing the variation of the minimum value of the voltage-current characteristic of the tunnel elements with temperature, the tunnel element can be used as an infrared sensor.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种非冷却低功耗型红外传感器。解决方案：红外线传感器装置设置有通过SN节点N104彼此串联连接的第一隧道元件101和第二隧道元件102，以及其栅极连接到SN节点N104的MOS晶体管107。当红外光108投射在第一隧道元件101上时，第一隧道元件101的电压 - 电流特性和第一隧道元件102的电压 - 电流特性的稳定交叉的数量变化，因此是/ 检测到红外辐射。代替施加红外线的第一隧道元件，可以使用电阻元件或正常二极管元件。通过利用隧道元件的电压 - 电流特性的最小值随温度的变化，隧道元件可以用作红外传感器。

9. 发明专利

JP2007158140A Organic transistor 审中-公开
标题翻译：有机晶体管
公开(公告)号：JP2007158140A
公开(公告)日：2007-06-21
申请号：JP2005352961
申请日：2005-12-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORIMOTO TADASHI
IPC分类号： H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide an organic transistor structure with high performance by reducing electric contact resistance between a source and drain electrode and an organic semiconductor concerning a bottom-contact organic transistor.
SOLUTION: The organic transistor 100 includes an insulating substrate 1, a gate insulating film 2, the source and drain electrode 3, a first organic molecule thin film 4, a second organic molecule thin film 5, and an organic semiconductor film 6. The second organic molecule thin film 4 is thio cresol. By the configuration, the electric contact resistance is reduced by enlarging the crystal grain size of the organic semiconductor film 6 on the source and drain electrode 3 so as to attain the organic transistor with high performance.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过降低源极和漏极之间的电接触电阻和与底部接触有机晶体管有关的有机半导体来提供具有高性能的有机晶体管结构。解决方案：有机晶体管100包括绝缘基板1，栅极绝缘膜2，源极和漏极3，第一有机分子薄膜4，第二有机分子薄膜5和有机半导体膜6 第二有机分子薄膜4是硫代甲酚。通过这样构成，通过放大源电极3和漏电极3上的有机半导体膜6的晶粒尺寸来降低电接触电阻，从而获得高性能的有机晶体管。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005012083A Semiconductor device of fold-up structure 审中-公开
标题翻译：折叠结构的半导体器件
公开(公告)号：JP2005012083A
公开(公告)日：2005-01-13
申请号：JP2003176457
申请日：2003-06-20
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANAKA HIDEYUKI , MIYAMOTO AKITO , MORIMOTO TADASHI
IPC分类号： H01L25/18 , H01L21/60 , H01L25/04
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To shorten the wiring length in a semiconductor device of a folded structure used for various electric equipment. SOLUTION: In the semiconductor device, circuit blocks (13a, 13b, 13c and 13d) are two-dimensionally arranged on one plastic film 11 in the form of an array. The plastic film 11 is folded with a folding line 17a of a column direction and a folding line 17b of a row direction, and the semiconductor in which the circuit block 13 is mounted in a high density is completed. Since the circuit block 13 before folding is arranged in both vertical and horizontal directions, wiring between the circuit blocks 13 of the column direction and the row direction can be shortened and simplified. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：缩短用于各种电气设备的折叠结构的半导体器件中的布线长度。解决方案：在半导体器件中，电路块（13a，13b，13c和13d）以阵列的形式二维布置在一个塑料膜11上。塑料薄膜11用列方向的折叠线17a和行方向的折叠线17b折叠，并且完成电路块13以高密度安装的半导体。由于在折叠之前的电路块13布置在垂直和水平两个方向上，所以可以缩短并简化列方向的电路块13与行方向之间的布线。版权所有（C）2005，JPO＆NCIPI

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