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1. 发明专利

JP4162280B2 Memory device and a memory array circuit 失效
公开(公告)号：JP4162280B2
公开(公告)日：2008-10-08
申请号：JP31330997
申请日：1997-11-14
申请人：株式会社日立製作所
发明人：アーメドハルーン , 和郎中里 , 清男伊藤 , 俊彦佐藤 , 壽一嶋田 , 博水田
IPC分类号： G11C11/38 , H01L21/8247 , G11C14/00 , H01L27/10 , H01L27/115 , H01L29/66 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a memory device having a tunnel barrier structure with a reduced write, read and erase time. SOLUTION: The device has memory nodes 1 for writing charges passed through a multiple tunnel barrier structure 2. The stored charge gives influence on the conductivity of a source-drain path 4. The conductivity of this path 4 is monitored to read data. The charge barrier structure is a multiple tunnel barrier structure 2 which is composed of alternately laminated polysilicon layers 16 3nm thick and Si3 N4 layers 15 1nm thick 4, covering a polycrystal layer of Si which forms the memory nodes 1, or may be a barrier structure which includes a Schottky barrier structure and conductive nano-scale conductive islands dispersed in an electric insulation matrix, acting as memory nodes.

2. 发明专利

JP2001326336A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001326336A
公开(公告)日：2001-11-22
申请号：JP2001062178
申请日：2001-03-06
申请人： TOSHIBA CORP
发明人： KOGA JUNJI , UCHIDA KEN , OBA RYUJI , CHOKAI AKIRA
IPC分类号： H01L27/10 , G11C11/38
摘要： PROBLEM TO BE SOLVED: To provide an element structure suitable for a high integration by realizing compatibility of a high speed operation and a low power consumption difficult in a conventional memory cell using a negative differentiating resistor and a load. SOLUTION: In a gate oxide film formed on a surface of a silicon substrate, a film on a source region is thinned. A first p type polycrystal silicon film, a tunnel oxide film and a second p type polycrystalline silicon film are sequentially laminated on a gate region. A source and the first silicon film constitute a high concentration impurity pn junction via a thin silicon oxide film to become an Esaki diode exhibiting the negative differentiating resistor. Meanwhile, a part between the first silicon film and the second silicon film becomes a nonlinear tunnel resistor to perform a role of load. The negative differentiating resistor and the load are connected in series between a low-voltage power source (ground) and a high-voltage power source Vdd to constitute a transistor containing a bistable circuit. Since potential information of the first silicon film of a memory node is read by a transistor amplification, it is rapid. Meanwhile, a current flowing between the power sources is suppressed to a low value, and a low power consumption at a waiting time is performed. An SRAM cell can be constituted of two elements with an excellent integration.

3. 发明专利

JP2001184859A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001184859A
公开(公告)日：2001-07-06
申请号：JP36222199
申请日：1999-12-21
申请人： HITACHI LTD
发明人： HANZAWA SATORU , SAKATA TAKESHI
IPC分类号： G11C11/38 , G11C11/407 , G11C11/418 , G11C16/06
摘要： PROBLEM TO BE SOLVED: To provide a word driver outputting a positive ternary voltage level. SOLUTION: This device consists of a PMOS transistor Mp11 supplying read potential, NMOS transistors Mn11 and Mn12 supplying standby potential and NMOS transistors Mn131 and Mn132 supplying write potential. Also, the word driver is controlled by main word lines MWLbp, NWLbn and MWLtn whose voltage amplitude is different and common word lines FXRWt and FXbn.

4. 发明专利

JPH117760A PHASE SYNCHRONIZATION STORAGE DEVICE AND COMPUTING APPARATUS 失效
公开(公告)号：JPH117760A
公开(公告)日：1999-01-12
申请号：JP15709397
申请日：1997-06-13
申请人： FUJITSU LTD
发明人： OSHIMA TOSHIO
IPC分类号： G11C11/38 , H01L27/10 , H01L29/06 , H01L29/66 , H01L29/88 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To guarantee that a specific phase state is maintained for a sufficiently long time and to make the error rate of information sufficiently small in a phase synchronization-type storage device and a computing apparatus in which a DC bias is applied to a very small tunnel junction single-electron-effect element, in which an AC pumping signal is applied so as to be phase-synchronized and in which information is stored and computed. SOLUTION: An auxiliary circuit 3, for error correction, which contains a device having the low error rate of information is installed. The refresh operation of information is performed from the auxiliary circuit 3 for error correction at a time interval which is shorter than the time in which a specific phase state is maintained stably. Alternatively, in order to store information which is contained in the time which is equal to, or more than, the time of the reciprocal number of the error rate of information, a plurality of phase synchronization-type storage circuits 1-1, 1-2 or computing circuits which are more than the number of stored bits of information are installed so as to be redundant. In addition, pieces of information which are outputted from the storage circuits or the computing circuits are decided by a majority vote. As a result, the error rate of information is made a sufficiently small value.

5. 发明专利

JPH07202227A TUNNEL DIODE 失效
公开(公告)号：JPH07202227A
公开(公告)日：1995-08-04
申请号：JP30643494
申请日：1994-12-09
申请人： PHILIPS ELECTRONICS NV
发明人： RONARUDO MARUCHIN UORUFU , PAURUSU UIRUHERUMUSU MARIA BUR , MARUSERINUSU PETORUSU KARORUSU
IPC分类号： G11C11/22 , G11C11/38 , G11C11/56 , H01L27/115 , H01L29/08 , H01L29/51 , H01L29/88 , H01L45/00
摘要： PURPOSE: To provide a tunnel diode having two or more permanent switching states. CONSTITUTION: Between two metallically conducting electrodes 1 and 2, an insulating dielectric 3 is provided, which is formed with a thickness forming a barrier comprising a barrier level with respect to electrons, while at a voltage higher than a threshold value, electrons can penetrate the barrier from one electrode to the other. Such tunnel diode as this has the disadvantage having no memory characteristic. In many applications, the tunnel diode which holds a certain switching state such as open/closed, under actual conditions such as the room temperature, is desired. The dielectric 3 has a layer of material, which exhibiting a ferroelecric characteristic at the room temperature, comprises such remanent polarization as affecting a barrier level. The tunnel diode has plural switching states, corresponding to the remanent polarization of dielectrics 3. This switching state is kept until the polarization of dielectric 3 changes.

6. 发明专利

JPH023142A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH023142A
公开(公告)日：1990-01-08
申请号：JP27761388
申请日：1988-11-04
申请人： AMERICAN TELEPHONE & TELEGRAPH
发明人： FUEDERIKO KIYAPASO , ARUFURETSUDO II CHIYOO , SUZANTA SEN
IPC分类号： G11C11/38 , G11C11/56 , H01L27/10 , H01L29/76 , H01L29/80 , H01L29/88 , H03B19/16
摘要： PURPOSE: To simplify a circuit and to obtain a fast processing rate by exclusively causing the resonance in the ground level of a quantum well to obtain such current-voltage characteristics that has a negative resistance region. CONSTITUTION: A GaAs layer 3 and a resonant tunneling double barrier layer including a quantum well are deposited on a GaAs substrate 2, on which heterojunction 19 is grown. Further, a GaAs contact layer 11 and a metalized layer 12 are formed by vapor deposition, and contact pads A, B are formed at a specified distance. The obtd. device corresponds to tunnelling diodes 21, 22 connected parallel to each other, and a resistor 23 connected both diodes corresponds to the channel layer 8 formed in the gap between the pads A, B. The common tunneling current is injected into the layer 8 via the barrier 18 to give current-voltage characteristics including a negative resistance region, and therefore, the current flows the region under the pads and between the pads. Or, by using a InAlAs-InGaAs-InAlAs resonant tunneling structure, the device can be operated at >100 deg.K.

7. 发明专利

JPS58159372A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58159372A
公开(公告)日：1983-09-21
申请号：JP4208182
申请日：1982-03-17
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： MATSUKAWA HISAHIRO
IPC分类号： G11C11/38 , H01L27/08 , H01L27/10 , H01L29/88
摘要： PURPOSE:To reduce the valley-point currents of Esaki diodes, and to enable to attain reduction of the consuming electric power, while to enhance the operating speed of the semiconductor device by a method wherein generation of a parasitic diode and junction capacitance is prevented. CONSTITUTION:A thick field oxide film (SiO2) 24 having opening parts 22, 23 is formed on a sapphire substrate 21, and thin silicon layers 25, 26 are formed in the opening parts 22, 23. High concentration P type regions 27, 29 and N type regions 28, 30 are formed, and are connected electrically by an Al wiring layer 31. The silicon layers 25, 26 formed with P-N junctions correspond to the Esaki diodes D1, D2, and because they are formed on the sapphire substrate 21, the unnecessary parasitic diode and junction capacitance to be connected in parallel thereto also are not generated, and the valley-point currents of the Esaki diodes are reduced.

8. 发明专利

JPS4937296B1 失效
公开(公告)号：JPS4937296B1
公开(公告)日：1974-10-08
申请号：JP8219171
申请日：1971-10-19
IPC分类号： G11C15/04 , G11C15/00 , G11C11/38

10. 发明专利

JP5151370B2 Semiconductor device 有权
公开(公告)号：JP5151370B2
公开(公告)日：2013-02-27
申请号：JP2007256366
申请日：2007-09-28
申请人：ソニー株式会社
发明人：真北川 , 光生曾根田
IPC分类号： G11C11/413 , G11C11/36 , G11C11/38
CPC分类号： G11C11/39
摘要： A semiconductor device includes a memory cell including a thyristor element with a gate having a pnpn structure formed in a semiconductor substrate, and a plurality of access transistors formed on the semiconductor substrate and each connected at a first terminal thereof to a storage node at one terminal of the thyristor element such that a potential at the storage node can be transmitted to bit lines different from each other, the gate of the thyristor element and the gates of the plurality of access transistors of the memory cell being connected to word lines different from one another.

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