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1. 发明专利

JPH09245373A OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH09245373A
公开(公告)日：1997-09-19
申请号：JP5019996
申请日：1996-03-07
申请人： MITSUI TOATSU CHEMICALS
发明人： FUKUDA SHIN , MIYASHITA TAKEHIRO , UMEHARA HIDEKI , FUKUDA NOBUHIRO
IPC分类号： G11B7/258 , G11B7/24
摘要： PROBLEM TO BE SOLVED: To produce a highly reliable optical recording medium having excellent resistance against high temp. and high humidity and resistance against light by successively laminating a light-absorbing layer containing an org. dye, a metal light-reflecting layer comprising essentially silver formed sputtering, and a protective layer. SOLUTION: A rewritable compact disk is produced by successively laminating a light-absorbing layer containing an org. dye, a light-reflecting layer and a protective layer on a transparent substrate. The light-absorbing layer is formed by applying a phthalocyanine dye by 2000rpm spin coating on a resin substrate having guide grooves and drying at 70 deg.C for 2 hours to form a layer of 100nm thickness. Further, the light-reflecting layer is formed thereon by sputtering a silver indium alloy target containing 3-20wt.% indium to form a metal layer of 100nm thickness essentially comprising silver. Further, a UV- curing resin is applied by spin coating thereon and the resin is irradiated with UV rays to form the protective layer having 6μm thickness. Thereby, a highly reliable optical recording medium having excellent resistance against high temp. and high humidity and resistance against light can be produced at a low cost.

2. 发明专利

JPH0955575A LAMINATE 失效
公开(公告)号：JPH0955575A
公开(公告)日：1997-02-25
申请号：JP20445795
申请日：1995-08-10
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , IWAMORI AKIRA , GOTOU YUMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： H05K1/09 , B32B15/08 , H05K3/14 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a laminate being employed in a flexible circuit board and excellent in high temperature resistance required for michromachininq in electric, electronic and semiconductor industries in which the adhesion of copper to a metal or alloy for imparting the heat resistance is enhanced along with the high temperature resistance of adhesion between a thin metal film and a polymer basic material. SOLUTION: A polymer film 1 is provided, on at least one side, with a first metal layer 2 of cobalt, molybdenum, titanium, nickel or an alloy containing at least two kinds of these metals, a second metal layer 3 of an alloy of copper and cobalt, molybdenum, titanium, or nickel or an alloy of copper and at least two kinds of these metals, and a third metal layer 4 of copper, wherein the third metal layer is interposed between the first and second metal layers in order to enhance the adhesion.

3. 发明专利

JPH08340162A METALLIC COMPOUND POLYMER FILM 失效
公开(公告)号：JPH08340162A
公开(公告)日：1996-12-24
申请号：JP14716495
申请日：1995-06-14
申请人： MITSUI TOATSU CHEMICALS
发明人： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU YUMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： H05K1/03 , B32B15/08 , C23C14/06 , C23C14/20 , H05K1/09 , H05K3/38
摘要： PURPOSE: To obtain a flexible circuit board material, which is relaxed significantly not only the deterioration of the characteristics in a high-temperature test but also the deterioration of the performance in a secondary processing, by a method wherein an inorganic cobalt compound layer is formed on one surface or both surfaces of a plastic film and a copper layer is formed thereon. CONSTITUTION: An inorganic cobalt compound layer 2 is formed on one surface or both surfaces of a plastic film 2 and a copper layer 3 is formed on the layer 2. For example, after the surfaces of a polyimide film 1 of a film thickness of 50.0μm are treated with oxygen glow discharge, a tetracobalt triphosphide layer 2 of a thickness of 500nm is formed on one surface of the film 1 by an RF magnetron sputtering method using argon gas. After that, a copper thin film layer 3 of a thickness of 250nm is immediately formed by a DC magnetron sputtering method using argon gas. Then, the thickness of a copper layer 4 for circuit is formed in 20μm by applying a copper electrolytic plating on the film 3.

4. 发明专利

JPH08250753A AMORPHOUS PHOTOELECTRIC TRANSDUCER 失效
公开(公告)号：JPH08250753A
公开(公告)日：1996-09-27
申请号：JP4829195
申请日：1995-03-08
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , ASHIDA YOSHINORI
IPC分类号： H01L31/04
摘要： PURPOSE: To make simultaneously a short-circuit photocurrent large and an open end voltage high by a method wherein the value of a second substantially intrinsic band gap is set in a specified range and moreover, the value of a band gap in a first substantially intrinsic semiconductor layer and the value of a band gap in a third substantially intrinsic semiconductor layer are respectively set in a specified range. CONSTITUTION: A semiconductor structure of a solar cell is constituted of a p-type semiconductor layer, a substantially intrinsic semiconductor layer and an n-type semiconductor layer. The characteristics of a photoelectric transducer are improved in the interface (p/i interface) between the p-type semiconductor layer and the substantially intrinsic semiconductor layer and the interface (i/n interface) between the substantially intrinsic semiconductor layer and the n-type semiconductor layer. That is, in the case where the value of a band gap is set at 1.6 to 1.8eV as that of a band gap in an i-type layer of an amorphous solar cell of a p-i-n structure, an amorphous silicon semiconductor layer, wherein the value of a band gap wider than that in the i-type layer is 1.6 to 2.1eV, is formed between a p-type layer and the i-type layer and between an n-type layer and the i-type layer. Thereby, a superior photoelectric transducer can be obtained.

5. 发明专利

JPH08231716A FLEXIBLE CIRCUIT SUBSTRATE 失效
公开(公告)号：JPH08231716A
公开(公告)日：1996-09-10
申请号：JP3556495
申请日：1995-02-23
申请人： MITSUI TOATSU CHEMICALS
发明人： FUKUDA SHIN , MIYASHITA TAKEHIRO , IWAMORI AKIRA , ASHIDA YOSHINORI , FUKUDA NOBUHIRO , TAMAI MASAJI , YAMASHITA WATARU , YAMAGUCHI TERUHIRO
IPC分类号： C08G73/10 , H05K1/03
摘要： PURPOSE: To obtain a flexible circuit substrate, excellent in heat resistance, flexibility, etc., and useful as semiconductor chips, etc., by polymerizing a specific acid anhydride with a diamine, carrying out the dehydrating condensation of the resultant polyamic acid and using a film of the prepared polyimide. CONSTITUTION: This flexible circuit substrate comprises a polyimide film formed from a polyimide of formula I or II and a thin film of at least copper (having preferably >=200μm film thickness) formed on the principal plane of the film. Furthermore, the polyimide of formula I is obtained by polymerizing (A) 3,3'- diaminodiphenyl ether with (B) 3,3',4,4'-diphenyl ether-tetracarboxylic dianhydride, carrying out the dehydrating condensation of the resultant polyamic acid and then carrying out the imidation. The polyimide of formula II is prepared by polymerizing (C) 3,4'-diaminobenzophenone with (D) 3,3',4,4'- benzophenonetetracarboxylic dianhydride, carrying out the dehydrating condensation of the resultant polyamic acid and then conducting the imidation.

6. 发明专利

JPH07183550A AMORPHOUS PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPH07183550A
公开(公告)日：1995-07-21
申请号：JP32374793
申请日：1993-12-22
申请人： MITSUI TOATSU CHEMICALS
发明人： ASHIDA YOSHINORI , TANAKA HIROBUMI , MIYASHITA TAKEHIRO , YANAGAWA NORIYUKI , ISHIGURO NOBUYUKI , SAITO KIMIHIKO
IPC分类号： H01L31/04
摘要： PURPOSE:To enhance an amorphous photoelectric conversion device in conversion efficiency, especially fill factor, and open and voltage by a method wherein a first and a second substantially intrinsic semiconductor thin film are formed of amorphous silicon hydride. CONSTITUTION:An amorphous semiconductor solar cell structure is basically formed of a blue glass plate on which tin oxide is deposited. That is, a glass plate/tin oxide is made to serve as a substrate 110, and a P-type semiconductor layer 112, an I-type semiconductor layer 113, an N-type semiconductor layer 114, a P-type semiconductor layer 115, an I-type semiconductor layer 116, and an N-type semiconductor layer 117 are successively laminated. It is preferable for a second electrode layer 111 that a substantially intrinsic semiconductor thin film on which sunlight is incident contains 15 to 50atom% of combined hydrogen, also it is preferable that a second substantially intrinsic semiconductor thin film contains 0.5 to 15atom% of combined hydrogen, and a first and a second semiconductor layer, a first and a second N-type semiconductor layer, and a first and a second electrode are so arranged as to conform to the above constitution.

7. 发明专利

JPH09212915A OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH09212915A
公开(公告)日：1997-08-15
申请号：JP1964896
申请日：1996-02-06
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , UMEHARA HIDEKI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： G11B7/254 , G11B7/24 , G11B7/257 , G11B7/258
摘要： PROBLEM TO BE SOLVED: To obtain an optical recording medium whose durability is excellent, whose reliability is high and which can be manufactured at low costs by a method wherein a light-reflecting layer is constituted of a thin metal layer and of a silver reflective layer. SOLUTION: An optical recording medium is constituted in such a way that a light-absorbing layer which contains an organic pigment, a thin metal layer, a silver reflective layer and a protective layer are laminated sequentially on a transparent substrate. Alternatively, an optical recording medium is constituted in such a way that a light-absorbing layer which contains an organic pigment, a thin metal layer, a silver reflective layer, a metal layer and a protective layer are laminated sequentially on a transparent substrate. It is desirable that, in the optical recording medium, the thin metal layer is a metal layer whose film thickness is at 0.1 to 5nm and which is composed of Ti, V, Cr, Cu, Zn or W.

8. 发明专利

JPH08330694A HEAT RESISTANT FLEXIBLE CIRCUIT BOARD 失效
公开(公告)号：JPH08330694A
公开(公告)日：1996-12-13
申请号：JP13771395
申请日：1995-06-05
申请人： MITSUI TOATSU CHEMICALS
发明人： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： H05K1/09 , C23C14/06 , C23C14/20 , H05K3/38
摘要： PURPOSE: To prevent drop of adhesive strength of a flexible circuit board having high heat resistance by forming a titanium layer into a specified thickness in a sputtering manner, as a metal intermediate layer of a copper polyimide film which consists of a copper or copper allay layer, the metal intermediate layer, and a polyimide film, in this order. CONSTITUTION: Relating to a heat resistant flexible circuit substrate, a polyimide film 1, a metal titanium intermediate layer 2 on the principal surface of the palyimide film 1, a copper thin film layer 3 on it, and a copper film 4 for circuit an it, are formed in this order. Here, the titanium layer acting as the metal intermediate layer 2 is formed, in sputtering manner, into such a thickness as to suppress drop of adhesive strength between the metal layer and polyimide layer to within 5% even when the titanium layer is heated at 150 deg.C for 24 hours. That is, after the polyimide film 1 is surface-treated by plasma, the titanium layer acting as the metal intermediate layer 2 is formed into the thickness 5-50nm in the spattering manner, and then on it, the copper or copper alloy layer 3 is forced.

9. 发明专利

JPH06260665A AMORPHOUS SOLAR CELL 失效
公开(公告)号：JPH06260665A
公开(公告)日：1994-09-16
申请号：JP4359793
申请日：1993-03-04
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , KOYAMA MASATO , ASHIDA YOSHINORI , FUKUDA NOBUHIRO
IPC分类号： H01L31/04
摘要： PURPOSE:To improve the photoelectric characteristic of an amorphous solar cell by using a silicon thin film excellent in photoelectric characteristic wherein the optical band gap, obtained by subjecting the p/i boundary layer of the solar cell to several times of film formation/reforming process cycles, is wide; the thickness formed in one cycle is a specific value; and the total film thickness is a specific value or below. CONSTITUTION:An a-Si thin film of 2nm is formed as a p/i boundary layer in the following film formation conditions: silane 10 sccm, hydrogen 10 sccm, pressure 0.15 Torr, high-frequency power 80mw/cm , and substrate temperature 180'C. The a-Si thin film is then exposed to discharge for 20sec in the following conditions: hydrogen 10 sccm, pressure 0.15 Torr, high-frequency power 500mw/cm , and substrate temperature 180 deg.C. The processes other than film formation/reforming are repeated for a constant time. The number of cycles should be six; the time of the reforming process must be 20sec in the first and second cycles, 10sec in the third and fourth, and 5sec in the sixth. The thickness of the thin film formed in one cycle will be 1-20nm, and the total film thickness be 100nm or below.

10. 发明专利

JPH09123343A LAMINATE 失效
公开(公告)号：JPH09123343A
公开(公告)日：1997-05-13
申请号：JP28546895
申请日：1995-11-02
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , IWAMORI AKIRA , GOTOU MASAMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： B32B15/08 , B32B15/088 , C23C14/20 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To make it possible to use a laminate having peeling strength of a metal thin film and a polymer film of 1kg/cm or more even after heat treatment at 180 deg.C for 72 hours at the atmosphere which has been difficult to be formed as a circuit board having excellent high-temperature durability corresponding to microprocessing of electric and electronic and semiconductor industries. SOLUTION: This laminate comprises a first metal layer formed at least on one surface of a polymer film by a sputtering method and a second metal layer formed after the first layer, wherein the initial peeling strength of the metal thin film and polymer film is 1kg/cm or more and the peeling strength of 1kg/cm or more is provided even after heating test at 180 deg.C for 72 hours in the atmosphere.

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