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1. 发明专利

JPH09281124A METHOD FOR OBSERVING SURFACE 失效
公开(公告)号：JPH09281124A
公开(公告)日：1997-10-31
申请号：JP9118196
申请日：1996-04-12
申请人： MITSUI TOATSU CHEMICALS
发明人： FUKUDA SHIN , KAWAMOTO SATOSHI , YAMAMOTO SADAAKI , FUKUDA NOBUHIRO
IPC分类号： G01B21/30 , G01N1/28 , G01N37/00 , G01Q10/00 , G01Q30/08 , G01Q30/20 , G01Q60/24 , G01Q70/00
摘要： PROBLEM TO BE SOLVED: To observe state of a polymer surface in the air with an atomic force microscope(AFM), by treating the surface by means of plasma including a metal mainly composed of titanium. SOLUTION: In treating a polymer surface by means of plasma including a metal, for instance, titanium, vanadium or the like is used as the metal, but titanium is preferred because of its affinity to carbon and oxygen and availability. The polymer surface may be a film sheet or other kinds of bulk. The polymer is, e.g. polyethylene terephthalate or the like. Sputtering, etc. is employed as an example of a method of treating the polymer surface. It is not necessary to form a physical continuous film to the metal of the surface subjected to the surface treatment by plasma including the metal. Whether the metal actually adheres to the surface is checked, for example, by X-ray photo-electron spectroscopy or the like.

2. 发明专利

JPH09262927A REFLECTING PLATE 失效
公开(公告)号：JPH09262927A
公开(公告)日：1997-10-07
申请号：JP7419496
申请日：1996-03-28
申请人： MITSUI TOATSU CHEMICALS
发明人： GOTOU MASAMI , OKAMURA TOMOYUKI , YAMAZAKI FUMIHARU , KAWAMOTO SATOSHI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： B32B7/02 , B32B7/10 , B32B9/00 , B32B15/04 , B32B15/08 , B32B27/00 , C23C14/08 , G02B5/08 , G02B5/26
摘要： PROBLEM TO BE SOLVED: To remarkably improve the heat resistance of a reflecting body with the use of silver by using an amorphous oxide layer which is formed by a spattering method in a high oxygen concentration atmosphere and composed mainly of indium and tin between a transparent polymer film and a silver thin film layer. SOLUTION: A reflecting body is formed by a method in which an oxide (ITO) layer 20 which is made mainly from indium and tin, a silver thin film layer 30, an adhesive layer 40, and a support 50 are laminated on a transparent polymer film 10. With regard to the polymer film 10, films of poly(ether sulphone), poly(ether ether ketone), polyimide, polycarbonate, and polyarylate which are transparent and can stand continuous service at not less than 150 deg.C. are used. As for the ITO film 20, in a spattering method, the partial pressure ratio of argon/oxygen which are spattering gas is adjusted so that oxygen is made greater than an argon/oxygen partial pressure ratio where specific resistance is made minimum, and it is preferable that the ITO film of at least 1×10 Ω.cm specific resistance is formed.

3. 发明专利

JPH09245373A OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH09245373A
公开(公告)日：1997-09-19
申请号：JP5019996
申请日：1996-03-07
申请人： MITSUI TOATSU CHEMICALS
发明人： FUKUDA SHIN , MIYASHITA TAKEHIRO , UMEHARA HIDEKI , FUKUDA NOBUHIRO
IPC分类号： G11B7/258 , G11B7/24
摘要： PROBLEM TO BE SOLVED: To produce a highly reliable optical recording medium having excellent resistance against high temp. and high humidity and resistance against light by successively laminating a light-absorbing layer containing an org. dye, a metal light-reflecting layer comprising essentially silver formed sputtering, and a protective layer. SOLUTION: A rewritable compact disk is produced by successively laminating a light-absorbing layer containing an org. dye, a light-reflecting layer and a protective layer on a transparent substrate. The light-absorbing layer is formed by applying a phthalocyanine dye by 2000rpm spin coating on a resin substrate having guide grooves and drying at 70 deg.C for 2 hours to form a layer of 100nm thickness. Further, the light-reflecting layer is formed thereon by sputtering a silver indium alloy target containing 3-20wt.% indium to form a metal layer of 100nm thickness essentially comprising silver. Further, a UV- curing resin is applied by spin coating thereon and the resin is irradiated with UV rays to form the protective layer having 6μm thickness. Thereby, a highly reliable optical recording medium having excellent resistance against high temp. and high humidity and resistance against light can be produced at a low cost.

4. 发明专利

JPH09232235A PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPH09232235A
公开(公告)日：1997-09-05
申请号：JP2911296
申请日：1996-02-16
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ISHIGURO NOBUYUKI , SADAMOTO MITSURU , FUKUDA SHIN , ASHIDA YOSHINORI , FUKUDA NOBUHIRO
IPC分类号： H01L21/205 , H01L21/20 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To improve an open end voltage and a film formation speed without lowering a short-circuit photocurrent and a drive factor and to enhance the conversion efficiency of a photoelectric conversion element by forming a fine crystalline silicon semiconductor thin film which is composed of an amorphous phase containing a crystallite which contains a phase gathered and constituted to be pillar-shaped or cone-shaped. SOLUTION: A fine crystalline silicon thin film is composed of amorphous phases 20 containing crystallites 30, and the crystallites 30 contain phases 40 which are gathered and constituted to be pillar-shaped or cone-shaped. It is not required that the pillar-shaped or cone-shaped fine crystallites gathered phases 40 are in a complete pillar-shaped state or in a complete cone-shaped state, and they may have a shape which is synthesized, composed or mixed. In the amorphous phases inside the thin film, a single crystallite may be contained in them in a dispersed state. At this time, the pillar-shaped or cone- shaped phases 40 in which the crystallites 30 in a crystallite size of 2 to 1000nm, more preferably a crystallite size of 5 to 80nm, are gathered and constituted and the amorphous phases 20 in about 20% are required inside the fine crystallite silicon thin film.

5. 发明专利

JPH09156023A TRANSPARENT CONDUCTIVE LAMINATE 失效
公开(公告)号：JPH09156023A
公开(公告)日：1997-06-17
申请号：JP31688195
申请日：1995-12-05
申请人： MITSUI TOATSU CHEMICALS
发明人： YAMAZAKI FUMIHARU , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： B32B7/02 , B32B9/00 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To inhibit a lowering of luminance at the time of continuing light emission by forming at least a transparent conductive layer composed mainly of indium oxide and a film layer composed mainly of carbon on one main face of a transparent polymer base. SOLUTION: A transparent conductive layer 20 composed mainly of indium oxide and having the thickness of 10-200nm and a film layer 30 composed mainly of carbon and having the thickness of 1-50nm are formed successively on one main face of a transparent polymer base 10. As a material used for the transparent polymer base 10, polyethylene terephthalate of superior transparency and processability or polyether sulfone of superior heat resistance is used. For the film forming method of the transparent conductive layer 20, the sputtering process can be used suitable, as a transparent conductive layer of superior transparency and conductivity can be easily processed, and for the film forming method of the film layer 30 composed mainly of carbon, the sputtering process or the plasma CVD process is more preferably used.

6. 发明专利

JPH0955575A LAMINATE 失效
公开(公告)号：JPH0955575A
公开(公告)日：1997-02-25
申请号：JP20445795
申请日：1995-08-10
申请人： MITSUI TOATSU CHEMICALS
发明人： MIYASHITA TAKEHIRO , IWAMORI AKIRA , GOTOU YUMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： H05K1/09 , B32B15/08 , H05K3/14 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a laminate being employed in a flexible circuit board and excellent in high temperature resistance required for michromachininq in electric, electronic and semiconductor industries in which the adhesion of copper to a metal or alloy for imparting the heat resistance is enhanced along with the high temperature resistance of adhesion between a thin metal film and a polymer basic material. SOLUTION: A polymer film 1 is provided, on at least one side, with a first metal layer 2 of cobalt, molybdenum, titanium, nickel or an alloy containing at least two kinds of these metals, a second metal layer 3 of an alloy of copper and cobalt, molybdenum, titanium, or nickel or an alloy of copper and at least two kinds of these metals, and a third metal layer 4 of copper, wherein the third metal layer is interposed between the first and second metal layers in order to enhance the adhesion.

7. 发明专利

JPH0933904A ELECTRODE FILM HAVING POLARIZATION FUNCTION 失效
公开(公告)号：JPH0933904A
公开(公告)日：1997-02-07
申请号：JP18910995
申请日：1995-07-25
申请人： MITSUI TOATSU CHEMICALS
发明人： FUKUDA SHIN , YAMAZAKI FUMIHARU , FUKUDA NOBUHIRO , WAKE SUSUMU
IPC分类号： G02B5/30 , B32B7/00 , B32B9/00 , G02B1/04 , G02F1/1333 , G02F1/1335 , G02F1/1343
摘要： PROBLEM TO BE SOLVED: To improve the transmittance and productivity of an element by forming a silicon oxide thin film layer obtd. by a plasma chemical vapor deposition method using an org. silicon compd. and oxygen on the main surface of a high-polymer film having a polarization function. SOLUTION: The electrode film formed with the silicon oxide thin film layer (B) 20 and the transparent conductive layer (C) 25 on the main surface of the high-polymer film (A) having the polarization function by having the constitution of ABC, BABC or BAC is formed. The silicon oxide thin film layer 30 is formed as the electrode film having the polarization function obtd. by the plasma chemical vapor deposition method using at least an org. silicon compd. and oxygen as a raw material. Namely, the silicon oxide layer 20 is formed on one surface of the high-polymer film 10 having the polarization function and further the transparent conductive layer 25 is formed thereon. The silicon oxide layer formed on at least one main surface of the high-polymer film 10 is preferably formed by using at least the org. silicon compd., gaseous oxygen, et., by the plasma chemical vapor deposition method.

8. 发明专利

JPH08340162A METALLIC COMPOUND POLYMER FILM 失效
公开(公告)号：JPH08340162A
公开(公告)日：1996-12-24
申请号：JP14716495
申请日：1995-06-14
申请人： MITSUI TOATSU CHEMICALS
发明人： IWAMORI AKIRA , MIYASHITA TAKEHIRO , GOTOU YUMI , FUKUDA SHIN , FUKUDA NOBUHIRO
IPC分类号： H05K1/03 , B32B15/08 , C23C14/06 , C23C14/20 , H05K1/09 , H05K3/38
摘要： PURPOSE: To obtain a flexible circuit board material, which is relaxed significantly not only the deterioration of the characteristics in a high-temperature test but also the deterioration of the performance in a secondary processing, by a method wherein an inorganic cobalt compound layer is formed on one surface or both surfaces of a plastic film and a copper layer is formed thereon. CONSTITUTION: An inorganic cobalt compound layer 2 is formed on one surface or both surfaces of a plastic film 2 and a copper layer 3 is formed on the layer 2. For example, after the surfaces of a polyimide film 1 of a film thickness of 50.0μm are treated with oxygen glow discharge, a tetracobalt triphosphide layer 2 of a thickness of 500nm is formed on one surface of the film 1 by an RF magnetron sputtering method using argon gas. After that, a copper thin film layer 3 of a thickness of 250nm is immediately formed by a DC magnetron sputtering method using argon gas. Then, the thickness of a copper layer 4 for circuit is formed in 20μm by applying a copper electrolytic plating on the film 3.

9. 发明专利

JP2559934B2 失效
公开(公告)号：JP2559934B2
公开(公告)日：1996-12-04
申请号：JP33488591
申请日：1991-12-18
申请人： MITSUI TOATSU CHEMICALS
发明人： TAKASE MITSUO , FUKUDA NOBUHIRO
IPC分类号： B32B7/02 , B32B15/08 , G02B5/08

10. 发明专利

JP2557922B2 失效
公开(公告)号：JP2557922B2
公开(公告)日：1996-11-27
申请号：JP33091587
申请日：1987-12-26
申请人： MITSUI TOATSU CHEMICALS
发明人： TAKASE MITSUO , FUKUDA NOBUHIRO
IPC分类号： B41M5/26 , G11B7/24 , G11B7/243

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