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1. 发明专利

JPH09232235A PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPH09232235A
公开(公告)日：1997-09-05
申请号：JP2911296
申请日：1996-02-16
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ISHIGURO NOBUYUKI , SADAMOTO MITSURU , FUKUDA SHIN , ASHIDA YOSHINORI , FUKUDA NOBUHIRO
IPC分类号： H01L21/205 , H01L21/20 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To improve an open end voltage and a film formation speed without lowering a short-circuit photocurrent and a drive factor and to enhance the conversion efficiency of a photoelectric conversion element by forming a fine crystalline silicon semiconductor thin film which is composed of an amorphous phase containing a crystallite which contains a phase gathered and constituted to be pillar-shaped or cone-shaped. SOLUTION: A fine crystalline silicon thin film is composed of amorphous phases 20 containing crystallites 30, and the crystallites 30 contain phases 40 which are gathered and constituted to be pillar-shaped or cone-shaped. It is not required that the pillar-shaped or cone-shaped fine crystallites gathered phases 40 are in a complete pillar-shaped state or in a complete cone-shaped state, and they may have a shape which is synthesized, composed or mixed. In the amorphous phases inside the thin film, a single crystallite may be contained in them in a dispersed state. At this time, the pillar-shaped or cone- shaped phases 40 in which the crystallites 30 in a crystallite size of 2 to 1000nm, more preferably a crystallite size of 5 to 80nm, are gathered and constituted and the amorphous phases 20 in about 20% are required inside the fine crystallite silicon thin film.

2. 发明专利

JPH08181079A FORMING METHOD OF AMORPHOUS SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH08181079A
公开(公告)日：1996-07-12
申请号：JP32280194
申请日：1994-12-26
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ISHIGURO NOBUYUKI , ASHIDA YOSHINORI
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE: To obtain an amorphous semiconductor thin film which is narrow in band gap and low in defect density by a method wherein an amorphous semiconductor thin film is formed on a substrate through the plasma decomposition of compound which contains silicon, and a film forming/heating gas treating process where the amorphous semiconductor thin film is exposed to a heated gas atmosphere is repeatedly carried out. CONSTITUTION: A process where an amorphous semiconductor thin film is formed as thick as 0.4 to 60nm on a substrate through the plasma decomposition of compound which contains silicon and another process where the amorphous semiconductor thin film is exposed to a heated gas atmosphere are repeatedly carried out, whereby an amorphous semiconductor thin film of prescribed thickness is formed. The temperature of the heated gas is set to 100 to 800 deg.C. An amorphous semiconductor thin film formed through the above forming method is used as an intrinsic semiconductor layer.

3. 发明专利

JPH07183550A AMORPHOUS PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPH07183550A
公开(公告)日：1995-07-21
申请号：JP32374793
申请日：1993-12-22
申请人： MITSUI TOATSU CHEMICALS
发明人： ASHIDA YOSHINORI , TANAKA HIROBUMI , MIYASHITA TAKEHIRO , YANAGAWA NORIYUKI , ISHIGURO NOBUYUKI , SAITO KIMIHIKO
IPC分类号： H01L31/04
摘要： PURPOSE:To enhance an amorphous photoelectric conversion device in conversion efficiency, especially fill factor, and open and voltage by a method wherein a first and a second substantially intrinsic semiconductor thin film are formed of amorphous silicon hydride. CONSTITUTION:An amorphous semiconductor solar cell structure is basically formed of a blue glass plate on which tin oxide is deposited. That is, a glass plate/tin oxide is made to serve as a substrate 110, and a P-type semiconductor layer 112, an I-type semiconductor layer 113, an N-type semiconductor layer 114, a P-type semiconductor layer 115, an I-type semiconductor layer 116, and an N-type semiconductor layer 117 are successively laminated. It is preferable for a second electrode layer 111 that a substantially intrinsic semiconductor thin film on which sunlight is incident contains 15 to 50atom% of combined hydrogen, also it is preferable that a second substantially intrinsic semiconductor thin film contains 0.5 to 15atom% of combined hydrogen, and a first and a second semiconductor layer, a first and a second N-type semiconductor layer, and a first and a second electrode are so arranged as to conform to the above constitution.

4. 发明专利

JPH09191117A SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH09191117A
公开(公告)日：1997-07-22
申请号：JP156896
申请日：1996-01-09
申请人： MITSUI TOATSU CHEMICALS
发明人： TANAKA HIROBUMI , SADAMOTO MITSURU , ISHIGURO NOBUYUKI , YANAGAWA NORIYUKI , FUKUDA SHIN
IPC分类号： H01L21/205 , H01L21/203 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To enhance the quality of thin film of a-SiGe:H being employed in the active layer of solar cell by varying the composition of an SiGe (H) layer having specified thickness and sandwiched by Si (H) layer having specified thickness gradually in the direction of lamination and laminating both layers such that a peak value is obtained at some position. SOLUTION: An Si (H) layer and an Si1-x Gex (H) layer (0

5. 发明专利

JPH0897452A AMORPHOUS PHOTOELECTRIC TRANSDUCER FORMING METHOD 失效
公开(公告)号：JPH0897452A
公开(公告)日：1996-04-12
申请号：JP23281894
申请日：1994-09-28
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ASHIDA YOSHINORI , ISHIGURO NOBUYUKI
IPC分类号： H01L31/04
摘要： PURPOSE: To obtain a solar cell excellent in characteristics by improving the open terminal voltage and curve factor of the solar cell characteristics, compared with a solar cell made of the materials used in the conventional technique. CONSTITUTION: The amorphous solar cell is composed of a substrate, first electrode, first doped semiconductor film, substantially intrinsic semiconductor film, second doped semiconductor film and second electrode laminated one above another. The forming process thereof has a thermally annealing step after forming the second doped semiconductor film.

6. 发明专利

JPH0851224A AMORPHOUS SEMICONDUCTOR PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPH0851224A
公开(公告)日：1996-02-20
申请号：JP18454994
申请日：1994-08-05
申请人： MITSUI TOATSU CHEMICALS
发明人： ASHIDA YOSHINORI , TANAKA HIROBUMI , ISHIGURO NOBUYUKI
IPC分类号： H01L31/04
摘要： PURPOSE:To provide a device high in rectification property and stable in high voltage at open end by using a transparent oxide electrode of a single layer or composite layers of a tin oxide or indium - tin oxides, and a metallic oxide layer of a single layer of an indium oxide, a lead oxide, a titanium oxide, or the like or composite layers of these combination. CONSTITUTION:A glass substrate 10/ a tin oxide 11 is used as a substrate, and a metallic oxide layer 12, an i-type semiconductor layer 13, and an n-type semiconductor layer 14 are stacked on it in this order, and silver is used as an electrode 15. The transparent oxide electrode 11 consists of a single layer or composite layers of a lead oxide or indium-tin oxides, and the metallic oxide layer 12 consists of a single layer of an indium oxide, a lead oxide, a titanium oxide, a tungsten oxide, a nickel oxide, a copper oxide, a indium oxide, or composite layers of these combination. By such introduction of the specified metallic oxide layer 12 between the transparent oxide electrode 11 and the amorphous semiconductor layer 13, excellent properties can be gotten, such as that the rectification property is high and that the voltage at open end and the curve factor are extremely high.

7. 发明专利

JPH09275220A SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH09275220A
公开(公告)日：1997-10-21
申请号：JP8249496
申请日：1996-04-04
申请人： MITSUI TOATSU CHEMICALS
发明人： TANAKA HIROBUMI , ISHIGURO NOBUYUKI , YANAGAWA NORIYUKI , SAITO KIMIHIKO , SADAMOTO MITSURU , FUKUDA SHIN
IPC分类号： H01L31/04 , H01L31/0248
摘要： PROBLEM TO BE SOLVED: To improve initial conversion factor and the like, by employing as an optical active layer a p-type amorphous silicon germanium hydride semiconductor film containing a specific quantity of chlorine. SOLUTION: A p-type amorphous silicon germanium hydride semiconductor film 6 containing 1-200 atom ppm (p-type a-SiGe:Cl:H) is used for the optical active layer of a injunction amorphous solar cell. This obtains a injunction amorphous thin film solar cell with an initial conversion factor of 10% or above and with a conversion factor after one-year aging test of 9.0% or above.

8. 发明专利

JPH0918038A PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPH0918038A
公开(公告)日：1997-01-17
申请号：JP16357395
申请日：1995-06-29
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ISHIGURO NOBUYUKI , FUKUDA SHIN
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE: To increase the conversion efficiency of a photoelectric conversion element due to the increase in a short-circuit photocurrent as well as the photostability by a method wherein a substantially true semiconductor thin film is composed of a fine crystalline semiconductor thin film made of silicon and germanium. CONSTITUTION: This photoelectric conversion element is composed of three chambers i.e., a specimen charge/pick up chamber, a forming chamber of doped film forming p type and n type semiconductor thin film and a forming chamber of a substantially true semiconductor thin film. That is, a glass substrate with transparent electrode made of tin oxide arranged in the charge chamber is vacuum-exhausted to be heated at 160 deg. for 30 minutes. Next, a substrate is carried to the doped film forming chamber so as to form a p type fine crystalline semiconductor thin film made of silicon and germanium. Through these procedures, the conversion efficiency of this photoelectric conversion element due to the increase in a short-circuit photocurrent as well as the photostability can be increased.

9. 发明专利

JPH0917728A SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH0917728A
公开(公告)日：1997-01-17
申请号：JP16357495
申请日：1995-06-29
申请人： MITSUI TOATSU CHEMICALS
发明人： SAITO KIMIHIKO , ISHIGURO NOBUYUKI , FUKUDA SHIN
IPC分类号： H01L21/205 , H01L21/20 , H01L31/04
摘要： PURPOSE: To obtain a silicon-germanium alloy semiconductor thin film having a high absorption of long-wavelength light, a low defect density and light stability by practically not containing microcrystal germanium and by composing of silicon and germanium. CONSTITUTION: In a microcrystal semiconductor thin film composed of silicon and germanium, no microcrystal germanium is contained. The microcrystal semiconductor thin film is composed of an amorphous phase consisting of SiGe and a microcrystal phase consisting of μc-Si and/or μc-SiGe with the size of crystal grain of 1nm to 2000nm. And it is a semiconductor thin film having the total amount of microcrystal phase in the film which is desired to be larger than 40% but no μc-Ge phase (microcrystal phase Ge) is practically contained. It is more desired if the microcrystal germanium and microcrystal silicon germanium alloy are not contained.

10. 发明专利

JPH0837316A AMORPHOUS SEMICONDUCTOR PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPH0837316A
公开(公告)日：1996-02-06
申请号：JP17088794
申请日：1994-07-22
申请人： MITSUI TOATSU CHEMICALS
发明人： ASHIDA YOSHINORI , TANAKA HIROBUMI , ISHIGURO NOBUYUKI
IPC分类号： H01L31/04
摘要： PURPOSE:To provide a photoelectric conversion device capable of improving a release voltage and a curve factor in characteristics of a solar cell, by carrying out oxide-plasma surface treatment on a transparent oxide electrode. CONSTITUTION:A glass substrate 10 with a transparent electrode made of tin oxide 11 is put in a substrate take-in and take-out chamber, and heated in a vacuum state. After the board 10 is moved in an oxide plasma treatment chamber, in which oxygen of 50cc/min is fed as a raw gas, the substrate 10 is surface-treated at a board temperature of 100 deg.C with high-frequency of 0.5W/cm under a pressure of 0.2 Torr for one minute. In an i-layer forming chamber, a monosilane gas of 10cc/min is fed for the substrate 10, and a substantially intrinsic amorphous silicon semiconductor layer 12 with a thickness of 100nm is formed at temperature of 200 deg.C under a pressure of 0.10 Torr in a plasma CDV method. In measurement of photoelectric characteristics, a release terminal voltage is 0.45V, while a very high curve factor of 0.65 can be obtained.

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