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1. 发明专利

JP2013211171A Method of manufacturing sulfide-based solid electrolyte 有权
标题翻译：制备基于硫化物的固体电解质的方法
公开(公告)号：JP2013211171A
公开(公告)日：2013-10-10
申请号：JP2012080845
申请日：2012-03-30
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MIYASHITA NORIHIKO
IPC分类号： H01M10/0562 , C01B33/00 , C01D15/00 , C01F7/68 , H01B1/06 , H01B13/00 , H01M6/18 , H01M10/0525
CPC分类号： H01M6/188 , C01B17/20 , C01P2002/30 , C01P2002/76 , C01P2004/61 , H01B1/10 , H01M6/18 , H01M10/0562
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a new sulfide-based solid electrolyte that can make up an S defect and increase conductivity as compared with a conventional solid electrolyte.SOLUTION: There is provided a method of manufacturing sulfide-based solid electrolyte that is characterized by including: mixing sulfide powder comprising one or two or more selected from the group consisting of lithium sulfide (LiS), phosphorus sulfide (PSor PS), silicon sulfide (SiS), germanium sulfide (GeS), boron sulfide (BS), gallium sulfide (GaS), tin sulfide (SnS or SnS), antimony sulfide (SbSor SbS), and aluminum sulfide (AlS); and baking the mixed powder in a hydrogen sulfide gas atmosphere.
摘要翻译：要解决的问题：提供一种制造与常规固体电解质相比可以构成S缺陷并增加导电性的新的硫化物基固体电解质的方法。解决方案：提供一种制造硫化物基固体电解质的方法其特征在于包括：将包含选自硫化锂（LiS），硫化磷（PSor PS），硫化硅（SiS），硫化锗（GeS），硫化硼（BS）），硫化镓（GaS），硫化锡（SnS或SnS），硫化锑（SbSor SbS）和硫化铝（AlS）; 并在硫化氢气氛中焙烧混合粉末。

2. 发明专利

JP2001307907A THERMISTOR COMPOSITION 失效
公开(公告)号：JP2001307907A
公开(公告)日：2001-11-02
申请号：JP2000121895
申请日：2000-04-24
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , YABUSAKI MOTOHIRO
IPC分类号： H01C7/04
摘要： PROBLEM TO BE SOLVED: To provide a thermistor composition the resistance value of which is stable and changes extremely little with time. SOLUTION: This thermistor composition is prepared by adding calcium which is a metal oxide to a mixed sintered compact of metal oxides containing 33-67 mol% manganese, 33-50 mol% cobalt, and

3. 发明专利

JP2012056827A Iron oxide particle 有权
标题翻译：氧化铁颗粒
公开(公告)号：JP2012056827A
公开(公告)日：2012-03-22
申请号：JP2010204551
申请日：2010-09-13
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： TOYOSHIMA AKIHIRO , YASUHARA YOSHIHIKO , NAKAJIMA TAKASHI , MIYASHITA NORIHIKO , MOTEGI AKIHIRO
IPC分类号： C01G49/02 , C01B25/37
摘要： PROBLEM TO BE SOLVED: To provide an iron oxide particle useful as a production raw material of olivine type lithium iron phosphate.SOLUTION: This iron oxide particle has a spinel structure, the volume accumulation particle size Dat accumulation volume of 50 vol.% is 5-100 nm, and the FeO abundance on the surface of the particle is 70% or more. In the iron oxide particle, preferably, the crystallite diameter is 7-50 nm. Preferably, the ratio D/Dbetween the volume accumulation particle size Dat accumulation volume of 90 vol.% and volume accumulation particle size Dat accumulation volume of 50 vol.% is 1.30 or lower.
摘要翻译：待解决的问题：提供可用作橄榄石型磷酸铁锂的生产原料的氧化铁颗粒。解决方案：该氧化铁颗粒具有尖晶石结构，在50体积％的积累体积下的体积累积粒径D 50 为5-100nm，FeO 颗粒表面的丰度为70％以上。在氧化铁颗粒中，优选微晶直径为7-50nm。优选地，体积累积粒径D 90之间的比例D 90 / D 50 < / SB>累积体积为90体积％，体积积累粒径D 50 为50体积％，积累体积为1.30以下。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2003243733A METHOD FOR MANUFACTURING p-TYPE THERMOELECTRIC CONVERSION MATERIAL 审中-公开
公开(公告)号：JP2003243733A
公开(公告)日：2003-08-29
申请号：JP2002037249
申请日：2002-02-14
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , YANO TOMOYASU , FUDA RYUMA , YASHIMA ISAMU
IPC分类号： B22F3/14 , C22C1/04 , H01L35/16 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To obtain a method for manufacturing a p-type thermoelectric conversion material whose performance index is significantly improved by suppressing the amount of oxygen adsorbed to pulverized alloy powder and thus lowering the specific resistance. SOLUTION: The method for manufacturing the p-type thermoelectric conversion material comprises melting and mixing of at least two kinds or more of elements selected from a group consisting of elements including bismuth, tellurium, selenium, antimony and sulfur and, according to need, dopant, pulverizing the resultant alloy block, and subjecting the pulverized powder alloy to hot pressing. The hot pressing is carried out at least in the presence of hexane, and a solvent having a formula C n H 2n+1 OH or C n H 2n+2 CO (wherein n is 1, 2 or 3). COPYRIGHT: (C)2003,JPO

5. 发明专利

JP2000323303A MATERIAL AND DEVICE FOR THERMISTOR 失效
公开(公告)号：JP2000323303A
公开(公告)日：2000-11-24
申请号：JP12698999
申请日：1999-05-07
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , YABUSAKI MOTOHIRO , HOSHINO KAZUTOMO , SAKATA MASARU
IPC分类号： H01C7/04
摘要： PROBLEM TO BE SOLVED: To provide a thermistor material capable of producing a thermistor device with small heat aging of property values such as a resistance value R, a thermistor constant B and the like, and improving a yield of the thermistor device having desired thermistor property. SOLUTION: A thermistor material comprises a complex oxide including manganese, nickel, chromium and zirconium as metal component, wherein a relative amount of metal components satisfies equations as follows : 0.005

6. 发明专利

JP2010070796A Zinc-oxide-based target 有权
标题翻译：基于氧化锌的目标
公开(公告)号：JP2010070796A
公开(公告)日：2010-04-02
申请号：JP2008238751
申请日：2008-09-17
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： TAKAHASHI SEIICHIRO , MORIUCHI SEIJI , MIYASHITA NORIHIKO , IKEDA MAKOTO
IPC分类号： C23C14/34 , C04B35/453 , C23C14/08
CPC分类号： C04B35/453 , C04B35/63416 , C04B35/638 , C04B2235/3232 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/6562 , C04B2235/6565 , C23C14/086 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a zinc-oxide-based target which has superior environment resistance. SOLUTION: The zinc-oxide-based target includes zinc oxide as a main component, and both elements of titanium (Ti) and gallium (Ga), in which the titanium content is in a range of 1.1 at% or more and the gallium content is in a range of 4.5 at% or more. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的耐环境性的氧化锌基靶。解决方案：基于氧化锌的靶包括氧化锌作为主要成分，钛（Ti）和镓（Ga）的两种元素，其中钛含量在1.1at％或更高的范围内，以及镓含量在4.5原子％以上的范围。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2006222161A THERMOELECTRIC CONVERSION MATERIAL AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2006222161A
公开(公告)日：2006-08-24
申请号：JP2005032219
申请日：2005-02-08
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , FUDA RYUMA , WATANABE HIROSHI
IPC分类号： H01L35/34 , H01L35/16
摘要： PROBLEM TO BE SOLVED: To achieve a thermoelectric conversion material which raises a figuring merit Z, and to provide a method of manufacturing it. SOLUTION: The method of manufacturing the thermoelectric conversion material manufactures the mixture of two or more of elements selected from an element group consisting of bismuth, tellurium, selenium, antimony and sulphur using an alloy lump obtained by heating melting. The method includes a rough crushing step of obtaining the rough crushing powder of the alloy lump by pulverizing the alloy lump in the state that it dipped in deionized water which performed boiling treatment (step S103), a machine pulverizing step (S104), an ordinary pressure calcining step of calcining the above pulverized powder while being dipped in the above deionized water and forming a half-sintered compact (S107), and a hotpress calcining step of forming a sintered compact which sintered the above half-sintered compact completely (step S108). COPYRIGHT: (C)2006,JPO&NCIPI

8. 发明专利

JP2007291521A Sputtering target and method for manufacturing oxide sintered body 有权
标题翻译：溅射目标和制造氧化物烧结体的方法
公开(公告)号：JP2007291521A
公开(公告)日：2007-11-08
申请号：JP2007095784
申请日：2007-03-30
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： TAKAHASHI SEIICHIRO , MIYASHITA NORIHIKO
IPC分类号： C23C14/34 , C04B35/00
CPC分类号： C23C14/086 , C04B35/01 , C04B35/457 , C04B35/62685 , C04B35/638 , C04B2235/3215 , C04B2235/3286 , C04B2235/3293 , C04B2235/5409 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/77 , C04B2235/80 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for forming a transparent conductive film, which has low resistivity and excellent transparency, and can be relatively easily patterned in amorphous state by weak acid etching and relatively easily crystallized. SOLUTION: The sputtering target is provided for forming the amorphous-state transparent conductive film. The sputtering target is provided with an oxide sintered body containing indium oxide, tin, if needed, and barium. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成具有低电阻率和优异透明度的透明导电膜的溅射靶，并且可以通过弱酸蚀刻相对容易地以无定形状态图案化并且相对容易结晶。解决方案：提供用于形成非晶态透明导电膜的溅射靶。如果需要，溅射靶设置有含有氧化铟，锡的氧化物烧结体和钡。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2005302954A Thermoelectric conversion material and method for manufacturing the same 审中-公开
标题翻译：热电转换材料及其制造方法
公开(公告)号：JP2005302954A
公开(公告)日：2005-10-27
申请号：JP2004115759
申请日：2004-04-09
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MIYASHITA NORIHIKO , FUDA RYUMA
IPC分类号： B22F1/00 , B22F3/10 , B22F3/14 , B22F3/24 , H01L35/16 , H01L35/34 , H02N3/00
摘要： PROBLEM TO BE SOLVED: To realize high-performance thermoelectric conversion materials and its manufacturing method, for increasing the output factor PF, and for increasing the performance exponent Z by increasing the carrier mobility μ.
SOLUTION: This method for manufacturing thermoelectric conversion materials for burning the pulverized powder of an alloy lump containing at least two types of elements and dopant as necessary to be selected from the group constituted of bismuth, tellurium, selenium, antimony and sulphuric elements comprises an ordinary pressure burning process (a step S107) of generating a first sintered body, by carrying out the ordinary pressure of pulverized powder; and a hot-press burning process (a step S108) of generating a second sintered body by pressurizing and burning the first sintered body, in a prescribed pressurization direction; and a re-hot press burning method (a step S110) of pressurizing and burning the second sintered body in an almost co-axial direction as the prescribed pressurization direction, and for flexibly deforming the second sintered body.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了实现高性能热电转换材料及其制造方法，用于增加输出系数PF，并且通过增加载流子迁移率μ来提高性能指数Z。解决方案：用于制造含有至少两种元素和掺杂剂的合金块的粉碎粉末的制造方法，所述组合物和掺杂剂根据需要选自铋，碲，硒，锑和硫酸元素包括通过进行粉碎的普通压力产生第一烧结体的普通压力燃烧工艺（步骤S107）; 以及通过在规定的加压方向对第一烧结体进行加压燃烧而产生第二烧结体的热压燃烧工序（步骤S108）以及将第二烧结体沿大致同轴方向加压燃烧为规定的加压方向的再热压烧结方法（步骤S110），并使第二烧结体挠曲变形。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2004134673A N-type thermoelectric transduction material and manufacturing method thereof 审中-公开
公开(公告)号：JP2004134673A
公开(公告)日：2004-04-30
申请号：JP2002299565
申请日：2002-10-11
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： MIYASHITA NORIHIKO , YANO TOMOYASU , FUDA RYUMA , YASHIMA ISAMU
IPC分类号： B22F3/14 , C22C1/04 , H01L35/16 , H01L35/34
CPC分类号： H01L35/34 , B22F2998/10 , C22C1/04 , B22F9/04 , B22F3/10 , B22F3/14
摘要： PROBLEM TO BE SOLVED: To provide an n-type thermoelectric transduction material and a manufacturing method thereof in which an output factor is enlarged by improving an electron movement degree inside a crystal and a performance exponent is remarkably improved.
SOLUTION: In the manufacturing method of the n-type thermoelectric transduction material, at least two or more kinds of elements are selected for mixing and melting out of a group composed of elements of bismuth, tellurium, selenium, antimony and sulfur, and a dopant as needed. Next, a lump of a resultant alloy and burning ground powder of the lump of the alloy are ground. The manufacturing method includes an ordinary pressure burning step for burning the ground powder under the ordinary atmospheric pressure, and a hot-press burning step for hot-pressing a semi-burned object of the ground powder which is burned under the ordinary pressure exceeding the atmospheric pressure.
COPYRIGHT: (C)2004,JPO

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