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1. 发明专利

JPH11233835A THERMOELECTRIC ELEMENT MATERIAL, THERMOELECTRIC ELEMENT USING THE SAME AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11233835A
公开(公告)日：1999-08-27
申请号：JP2948798
申请日：1998-02-12
申请人： MITSUI MINING & SMELTING CO
发明人： YASHIMA ISAMU , FUDA RYUMA
IPC分类号： C22C12/00 , H01L35/16 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To improve performance index Z. SOLUTION: At least two kinds of raw material powders such as Te, Bi, Se, Sb, S, etc., are combined to provide materials such as BiTe, BiSe, AsTe, AsSe, Bib, SbS, etc., and a dopant Ax By (where x+y=5) for controlling the electron concn. is added to one or combination of these materials to form a thermoelectric element material.

2. 发明专利

JP2001313427A METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MATERIAL 失效
公开(公告)号：JP2001313427A
公开(公告)日：2001-11-09
申请号：JP2001044817
申请日：2001-02-21
申请人： MITSUI MINING & SMELTING CO
发明人： KANO NOBUYORI , FUDA RYUMA , ABU YUICHI , YASHIMA ISAMU
IPC分类号： B22F1/00 , B22F3/14 , C22C12/00 , C22C28/00 , H01L35/16 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thermoelectric conversion material for markedly improving the performance index having low density of carriers and high mobility. SOLUTION: The method for manufacturing a thermoelectric conversion material comprises the steps of mixing at least two types or more of bismuth, tellurium and selenium and a dopant as needed, melting their mixture, then comminuting the obtained alloy lump, and then hot pressing the comminuted mixture. In this case, the comminuting and hot pressing steps are conducted in the presence of a solvent represented by a CnH2n+1OH or a CnH2n+1CO (n is 1, 2 or 3).

3. 发明专利

JPH10308538A THERMOELECTRIC ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH10308538A
公开(公告)日：1998-11-17
申请号：JP11781797
申请日：1997-05-08
申请人： MITSUI MINING & SMELTING CO
发明人： YASHIMA ISAMU , TOCHIO MASAHIRO , SATOU AKIHITO , FUDA RYUMA
IPC分类号： C22B9/10 , C22B30/00 , C22B61/00 , H01L35/16 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To make it possible to conquer brittleness by adding and mixing high-purity silicon powder in the material of the thermoelectric element, depositing the material having the specified composition at the upper part of the thermoelectric material alloy during the alloy forming process, and removing and separating the impurity oxygen in the alloy. SOLUTION: The flakes of the starting materials of tellurium, bismuth and antimony are measured so that telluride bismuth and telluride antimony have the alloy composition of 20:80. Then Si powder is measured and added so that the weight ratio of the alloy starting raw materials becomes 0.1 wt.%. The powder is heated and melted for 5 hours at 800 deg.C in argon in a high-purity graphite crucible. After natural cooling, the powder of dark-red Bi4 (SiO4 )3 is deposited at the upper part of the alloy of the thermoelectric material. After the power is removed, the alloy is crushed and mixed until the average particle diameter becomes 5 μm by using a mill under the environment, wherein the partial pressure of oxygen becomes 1 ppm. The crushed power undergoes hot- press treatment for 2 hours at 500 deg.C at oxygen concentration of 1 ppm or less by using a graphite metal mold.

4. 发明专利

JP2006222161A THERMOELECTRIC CONVERSION MATERIAL AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2006222161A
公开(公告)日：2006-08-24
申请号：JP2005032219
申请日：2005-02-08
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , FUDA RYUMA , WATANABE HIROSHI
IPC分类号： H01L35/34 , H01L35/16
摘要： PROBLEM TO BE SOLVED: To achieve a thermoelectric conversion material which raises a figuring merit Z, and to provide a method of manufacturing it. SOLUTION: The method of manufacturing the thermoelectric conversion material manufactures the mixture of two or more of elements selected from an element group consisting of bismuth, tellurium, selenium, antimony and sulphur using an alloy lump obtained by heating melting. The method includes a rough crushing step of obtaining the rough crushing powder of the alloy lump by pulverizing the alloy lump in the state that it dipped in deionized water which performed boiling treatment (step S103), a machine pulverizing step (S104), an ordinary pressure calcining step of calcining the above pulverized powder while being dipped in the above deionized water and forming a half-sintered compact (S107), and a hotpress calcining step of forming a sintered compact which sintered the above half-sintered compact completely (step S108). COPYRIGHT: (C)2006,JPO&NCIPI

5. 发明专利

JPH09263460A PRODUCTION OF GRAINY PERLITE EXPANDED MATERIAL HAVING LARGE GRAIN DIAMETER 失效
公开(公告)号：JPH09263460A
公开(公告)日：1997-10-07
申请号：JP7416896
申请日：1996-03-28
申请人： MITSUI MINING & SMELTING CO
发明人： SUENAGA KEIJI , HANAWA KENZO , FUDA RYUMA
IPC分类号： C04B38/00 , C01B33/26 , C04B35/63
摘要： PROBLEM TO BE SOLVED: To provide the production for efficiently produce a grainy perlite expanded material that has large grain diameter and can be used in a wide variety of application fields such as soil conditioner, in good yield by using raw soft perlite as a raw material. SOLUTION: This production comprises: crushing raw perlite having the property of forming finer grains at the time of heating and expanding it; classifying the crushed raw perlite to obtain refined perlite 1; sticking a softening agent consisting of sodium hydroxide to the surface of each of grains of the refined perlite 1; and thereafter, heating and expanding the resulting perlite material. Alternatively, this production comprises: heating and expanding a sample of refined perlite 1 obtained by crushing raw perlite and classifying the crushed raw perfite, in a heating furnace to obtain a grainy expanded material sample; measuring the grain diameter of the grainy expanded material sample; determining beforehand whether the sticking of a softening agent to the refined perlite is required or not based on the measurement of the grain diameter of the grainy expanded material sample; sticking a softening agent consisting of sodium hydroxide to the surface of each of grains of the refined perlite 1 when it is determined that the sticking of the softening agent in required; and thereafter, heating and expanding the resulting perlite material.

6. 发明专利

JP2012126981A Cu ALLOY FOR WIRING AND CONNECTION STRUCTURE USING THE SAME 有权
标题翻译：铜合金用于接线和连接结构
公开(公告)号：JP2012126981A
公开(公告)日：2012-07-05
申请号：JP2010281365
申请日：2010-12-17
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： KUBOTA TAKASHI , FUDA RYUMA , TAKAHASHI HIROKI
IPC分类号： C22C9/00 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a technique by which wiring can be directly formed with Cu alloy on an insulating layer such as glass while saving an adhesion layer of Mo etc. and without applying heat treatment, and by which wiring having the good surface smoothness is formed.SOLUTION: The Cu alloy for wiring includes by atomic, 0.01-0.5% Bi, 0.05-0.5% In and the balance Cu with inevitable impurities. A connection structure is provided in which an insulating layer is directly joined to Cu alloy wiring, the connection structure is characterized in that: the Cu alloy contains Bi and In and the Cu alloy wiring has a Bi segregated layer which is formed at the joining interface side to the insulating layer.
摘要翻译：要解决的问题：提供一种技术，其中可以在诸如玻璃的绝缘层上直接与Cu合金形成布线，同时节省Mo等的粘合层并且不施加热处理，并且通过哪种布线具有形成良好的表面光滑度。
解决方案：用于布线的Cu合金包括原子为0.01-0.5％Bi，0.05-0.5％In，余量为不可避免的杂质。提供一种连接结构，其中绝缘层直接接合到Cu合金布线，其连接结构的特征在于：Cu合金含有Bi和In，Cu合金布线具有形成在接合界面处的Bi分离层侧到绝缘层。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2003243733A METHOD FOR MANUFACTURING p-TYPE THERMOELECTRIC CONVERSION MATERIAL 审中-公开
公开(公告)号：JP2003243733A
公开(公告)日：2003-08-29
申请号：JP2002037249
申请日：2002-02-14
申请人： MITSUI MINING & SMELTING CO
发明人： MIYASHITA NORIHIKO , YANO TOMOYASU , FUDA RYUMA , YASHIMA ISAMU
IPC分类号： B22F3/14 , C22C1/04 , H01L35/16 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To obtain a method for manufacturing a p-type thermoelectric conversion material whose performance index is significantly improved by suppressing the amount of oxygen adsorbed to pulverized alloy powder and thus lowering the specific resistance. SOLUTION: The method for manufacturing the p-type thermoelectric conversion material comprises melting and mixing of at least two kinds or more of elements selected from a group consisting of elements including bismuth, tellurium, selenium, antimony and sulfur and, according to need, dopant, pulverizing the resultant alloy block, and subjecting the pulverized powder alloy to hot pressing. The hot pressing is carried out at least in the presence of hexane, and a solvent having a formula C n H 2n+1 OH or C n H 2n+2 CO (wherein n is 1, 2 or 3). COPYRIGHT: (C)2003,JPO

8. 发明专利

JPH11233833A THERMOELECTRIC CONVERSION MODULE 失效
公开(公告)号：JPH11233833A
公开(公告)日：1999-08-27
申请号：JP2938398
申请日：1998-02-12
申请人： MITSUI MINING & SMELTING CO
发明人： YASHIMA ISAMU , FUDA RYUMA
IPC分类号： H01L35/08 , H01L35/16
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric conversion module having a high bonding strength between a copper electrode and a thermoelectric conversion element without lowering the thermoelectric characteristics of the thermoelectric conversion element. SOLUTION: This thermoelectric conversion module is provided with a thermoelectric conversion element, which is formed by sintering a thermoelectric conversion material containing at least two or more kinds selected from bismuth, tellurium, selenium and antimony and also containing a depant if necessary, and a copper electrode. At this point, the thermoelectric conversion element and the copper electrode are coupled by a junction layer consisting of tin- bismuth or bismuth which is brought into the state of paste using a non-aqueous organic solvent. It is desirable that the thickness of the junction layer is 0.1 to 100 μm.

9. 发明专利

JPH06296046A MANUFACTURE OF THERMOMODULE 失效
公开(公告)号：JPH06296046A
公开(公告)日：1994-10-21
申请号：JP10038892
申请日：1992-03-26
申请人： MITSUI MINING & SMELTING CO
发明人： MIHARA MASAYOSHI , FUDA RYUMA
IPC分类号： H01L35/28
摘要： PURPOSE:To eliminate the deviation between an electrode and a thermoelectric semiconductor element, and to prevent wasteful heat generation by a method wherein, when a skeleton type thermomodule is manufactured, adhesive resin is applied to a supporting member, an electrode is arranged thereon, and the electrode is firmly fixed to the adhesive resin. CONSTITUTION:A double-sides tape 12, on which adhesive resin is applied, is glued on a hard supporting board 11 made of metal, ceramic and the like. An electrode 13 is arranged on the prescribed position of the above-mentioned double-sided tape 12. The electrode 13 is coated with a conductive bonding agent or cream solder 14. A thermoelectric semiconductor element 15 is arranged thereon. An electrode 17 is formed on a ceramic substrate 16 which is prepared independently. This electrode 17 is coated with a conductive bonding agent or cream solder 14. The prepared ceramic substrate 16 is turned inside out and placed on the prepared material. The ceramic substrate 16 is heated up and the conductive bonding agent or the cream solder is dissolved, everything is fixed by cooling. The adhesive resin of the double-sided tape is expanded by dipping into the organic solvent such as acetone and the like, and the supporting board 11 is taken out from the electrode.

10. 发明专利

JP2010236023A Al-Ni ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING THE SAME 审中-公开
标题翻译： Al-Ni合金材料和使用其的器件结构
公开(公告)号：JP2010236023A
公开(公告)日：2010-10-21
申请号：JP2009085484
申请日：2009-03-31
申请人： Mitsui Mining & Smelting Co Ltd , Samsung Electronics Co Ltd , 三井金属鉱業株式会社 , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： TOKUCHI NARINORI , FUDA RYUMA , MATSUURA YOSHINORI , KUBOTA TAKASHI , KIM BYEONG-BEOM , JEONG CHANGOH , BAE YANGHO , YUN PIL SANG
IPC分类号： C22C21/00 , G02F1/1343 , G09F9/30 , H01B1/02 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/417 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an Al-Ni alloy wiring material which can directly make contact with a transparent electrode layer of ITO (Indium Tin Oxide) or the like, has superior corrosion resistance against a developer and superior corrosion resistance in the formation of a contact hole, and allows devices to have constant contact resistance values even though the devices are formed within a surface of a glass substrate having a large area.
SOLUTION: In the Al-Ni alloy wiring material containing nickel in aluminum, cerium and boron are contained. When the atomic percentage of nickel for nickel content is defined as Xat%, the atomic percentage of cerium for cerium content is defined as Yat% and the atomic percentage of boron for boron content is defined as Zat%, respective concentrations are within the range of regions satisfying respective inequalities 0.5≤X≤5.0, 0.01≤Y≤1.0 and 0.01≤Z≤1.0.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以直接与ITO（氧化铟锡）等的透明电极层接触的Al-Ni合金布线材料，对显影剂具有优异的耐腐蚀性和优异的耐腐蚀性形成接触孔，并且即使在具有大面积的玻璃基板的表面内形成器件，也允许器件具有恒定的接触电阻值。解决方案：在含有铝中的镍的Al-Ni合金布线材料中，含有铈和硼。当镍含量的原子百分比定义为Xat％时，铈含量的铈的原子百分比定义为Yat％，硼含量的硼原子百分比定义为Zat％，各自的浓度均在满足各不等式0.5≤X≤5.0,0.01≤Y≤1.0和0.01≤Z≤1.0的区域。版权所有（C）2011，JPO＆INPIT

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