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1. 发明专利

JPH11233696A POWER SEMICONDUCTOR MODULE AND BONDED BLOCK OF POWER SEMICONDUCTOR MODULE AND COOLER 失效
公开(公告)号：JPH11233696A
公开(公告)日：1999-08-27
申请号：JP3455498
申请日：1998-02-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： USUI OSAMU , OI TAKESHI , HORIGUCHI GOJI , KIKUNAGA TOSHIYUKI , TAKAHASHI MITSUGI , MATSUDA SADAMU , MUTO HIROTAKA , OGUSHI TETSURO , KAMIGAI YASUMI , KIKUCHI TAKUMI , MIYA KAZUHIRO , HONDA TOSHIHISA , MURAKAMI SHOJI
IPC分类号： H01L23/36 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide means for improving the long-term reliability of a member to be a thermal conduction passage in a power semiconductor module and the cooling performance of the semiconductor module. SOLUTION: A material 20 having a m.p. lower than the max. working temp. of an IGBT element 4 is provided between an insulation substrate 3 to be a thermal conduction passage in an IGBT module (power semiconductor module) 1 and heat radiating metal base plate 2, and a double-layer coating layer is provided by coating an anticorrosive member 21a on the surfaces of the radiating metal base plate 2 and the insulation substrate 3 maping contact with the low m.-p. material 20 and coating a high contact member 22 having a good contact to the low-m.p. material 20 thereon. As a result, a thermal stress-free capability is realized between the members, the long-time reliability is enhanced greatly, the cooling performance of the IGBT module 1 is enhanced, and moreover alloying of the low-m.p. material 20 is suppressed.

2. 发明专利

JPH04209411A DIELECTRIC CERAMIC MATERIAL FOR MICROWAVE 失效
公开(公告)号：JPH04209411A
公开(公告)日：1992-07-30
申请号：JP40035490
申请日：1990-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , SAITO KIYOSHI , HONDA TOSHIHISA , UCHIUMI YOSHIKAZU , WATAI HISAO
IPC分类号： C04B35/46 , H01B3/12 , H01P7/10 , H05K1/03
摘要： PURPOSE:To obtain a high dielectric constant and a sufficient Q value by using the mixture of the specified component of BaCO3, TiO2, Sm2O3, CaCO3, SrCO3, CeO3, CaTiO3 as the original material, and adding Mn2O3 thereto. CONSTITUTION:A composition range at molar fraction of the dielectric ceramic material for microwave showed with a composition formula I is 0.1

3. 发明专利

JPH11168797A LOUDSPEAKER MAGNETIC CIRCUIT 失效
公开(公告)号：JPH11168797A
公开(公告)日：1999-06-22
申请号：JP33424797
申请日：1997-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARAKI TAKESHI , MURAKAMI SHOJI , HONDA TOSHIHISA , HARA KOZO
IPC分类号： H04R9/02
摘要： PROBLEM TO BE SOLVED: To provide a loudspeaker magnetic circuit having small acoustic distortion. SOLUTION: In this loudspeaker magnetic circuit provided with a voice coil 5 directly connected to a diaphragm, a magnet 3 and a magnetic guiding part (plate 1, center pole 2 and magnetic member such as a yoke) for guiding a DC magnetic flux generated from the magnet 3 to the voice coil 5, a different material of larger saturated magnetization and better linearity in magnetization to a magnetic field than a soft magnetic member around it is used for at least one of magnetic pole parts on the inner side or outer side of the voice coil. Furthermore, non-magnetic conductor rings of the same material and of equal outer diameters are installed vertically, while the magnetic pole part is held on the inner side of the voice coil, wherein a non-magnetic conductor ring installed on the side of high magnetic resistance among them is set shorter and thicker than the other.

4. 发明专利

JPH0961258A RESISTOR FOR TEMPERATURE MEASUREMENT, ITS MANUFACTURE AND INFRARED DETECTING ELEMENT USING THE RESISTOR 失效
公开(公告)号：JPH0961258A
公开(公告)日：1997-03-07
申请号：JP8382396
申请日：1996-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , SATO TAKEHIKO , HONDA TOSHIHISA , UMEMURA TOSHIO , UCHIKAWA HIDEFUSA
IPC分类号： G01K7/16 , G01J5/02 , G01J5/20 , H01C3/04 , H01C7/04
摘要： PROBLEM TO BE SOLVED: To achieve a super miniaturization, a high sensitivity, a high accuracy or a high integration of a temperature measuring device by incorporating the conductive material comprising one or two or more kinds of metal, metal oxide or metal nitride having higher conductivity than that of vanadium oxide base metal into the vanadium oxide base metal. SOLUTION: Vanadium oxide is made to be base metal, and the conductive material comprising one or two or more kinds of metal, metal oxide or metal nitride having higher conductivity than the vanadium oxide is contained in the base metal. Then, the lower volume resistivity is indicated at room temperature. Thus, a temperature measuring resistor 5, whose volume resistivity is largely changed in accordance with the temperature change, is obtained. The resistor 5 is arranged on a silicon substrate 1, wherein a transistor circuit 7 and a signal processing circuit 6 that are the parts to be measured are assembled, and a temperature measuring device is constituted. Then, the resistance of the detecting part is small even when a thin film is formed because the volume resistivity of the resistor 5 is low, the impedance matching and the response property for the circuit 6 are improved, the areas of electrodes 3 and 4 can be made narrow and the temperature of the circuit 7 can be monitored accurately.

5. 发明专利

JPH0428111A HIGH FREQUENCY DIELECTRIC CERAMICS 失效
公开(公告)号：JPH0428111A
公开(公告)日：1992-01-30
申请号：JP13299190
申请日：1990-05-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , HONDA TOSHIHISA , UCHIUMI YOSHIKAZU , WATAI HISAO
IPC分类号： C04B35/46 , H01B3/12
摘要： PURPOSE:To given high relative dielectric constant of more than 50, practically enough high Q value of 1000 or more and stable temperature coefficient even in a micro wave region by using ceramics with specific composition in this invention. CONSTITUTION:Composition expressed in a formula Sr3(1-x)Ca3x{Ti(1-y)Cey}2O7 used {in the formula, 0.10

6. 发明专利

JPS639169A MANUFACTURE OF ELECTROSTRICTIVE DISPLACEMENT ELEMENT 失效
公开(公告)号：JPS639169A
公开(公告)日：1988-01-14
申请号：JP15340386
申请日：1986-06-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： HONDA TOSHIHISA , YAMADA AKIRA , IDO TAKEO
IPC分类号： H01L41/39
摘要： PURPOSE:To improve an electrostrictive displacement element in its mechanical strength through augmenting bondage between an electrostrictive ceramic member and an inner electrode layer for enhanced reliability and prolonged service life by a method wherein an inner electrode is built on an electrostrictive ceramic green sheet, an electrostrictive ceramic intermediate layer is formed on the green sheet, another green sheet is placed on the intermediate layer, and then the three are solidified into one before being subjected to sintering. CONSTITUTION:In a process of manufacturing an electrostrictive displacement element wherein electrostrictive ceramic members and inner electrodes are stacked up one upon another, an inner electrode 2 is formed on an electrostrictive ceramic green sheet 1a first of all, an electrostrictive ceramic intermediate layer 3 is next formed on the inner electrode 2, a green sheet 1b is then placed on the ceramic intermediate layer 3, and the entirety is subjected to sintering. For example, an electrostrictive ceramic green sheet 1a is applied to an inner electrode 2 and is allowed to dry, a ceramic intermediate layer 3 is formed on the inner electrode 2 by application of a paste consisting of an organic solvent and ceramic powder dispersed therein, another green sheet 1b is placed on the ceramic intermediate layer 3, and the entirety is subjected to sintering as in a conventional method, for the completion of an electrostrictive displacement element. A ceramic intermediate layer 3 of this design should preferably be same in composition as the electrostrictive ceramic material constituting other portions of the element.

7. 发明专利

JPH06290984A HIGH DIELECTRIC-CONSTANT CAPACITOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06290984A
公开(公告)日：1994-10-18
申请号：JP7955393
申请日：1993-04-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUROIWA TAKEHARU , HONDA TOSHIHISA , MATSUNO SHIGERU , KINOUCHI SHINICHI , UCHIKAWA HIDEFUSA , WATAI HISAO , MIKAMI NOBORU , HORIKAWA TAKESHI , OKUDAIRA TOMOHITO , KUSUMI YOSHIHIRO
IPC分类号： H01B3/00 , H01G4/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
摘要： PURPOSE:To provide a high dielectric-constant capacitor, which is used as a capacitor for a semiconductor storage device and in which capacitor characteristics are not deteriorated even in the heat treatment in a manufacturing process, while providing the capacitor having a high dielectric constant and small leakage currents regardless of heat treatment, manufacture thereof and a dielectric film for the capacitor. CONSTITUTION:A dielectric film 4 consisting of a dielectric material mainly comprising a metallic oxide and a pair of lower and upper electrodes 3, 5 oppositely faced while holding the dielectric film are formed, and a protective film 1 preventing oxygen deficiency is formed onto the upper electrode 5.

8. 发明专利

JPH05299365A 失效
公开(公告)号：JPH05299365A
公开(公告)日：1993-11-12
申请号：JP28978092
申请日：1992-10-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： UCHIKAWA HIDEFUSA , MATSUNO SHIGERU , KINOUCHI SHINICHI , HONDA TOSHIHISA , KUROIWA TAKEHARU , WATAI HISAO , HIGAKI TAKASHI
IPC分类号： C23C16/40 , H01L21/205 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To vaporize a raw compound by a low-temperature heating and to transport stably the raw compound to a reaction part by a method wherein the vapor of an organic solvent having a boiling point of a specified value or lower is brought into contact with the raw compound in the process on at least one side of the vaporization process and the transportation process for the raw compound. CONSTITUTION:A hot wall type CVD device is used and a strontium titanate oxide dielectric material thin film is manufactured on a magnesium oxide substrate. As the raw material for the thin film, an acethylacetonato derivative consisting of Sr and Ti is used and the vapor of a dimethyl keton, which is an organic solvent having a boiling point of 100 deg.C or lower, is flowed in the CVD device and is brought into contact with this derivative at the time of heating. As reaction gas, oxygen gas is used and a pressure in a reaction part, a substrate temperature and a reaction time are respectively set at 8 Torr, 700 deg.C and in 10 minutes. Thereby, even if a heating temperature is made low, it is possible to obtain the dielectric material thin film having a good performance. In such a way, by forming a low-boiling point addition material, the vaporability of the thin film can be improved also in a low-temperature heating.

9. 发明专利

JPH04209759A DIELECTRIC PORCELAIN FOR HIGH FREQUENCY 失效
公开(公告)号：JPH04209759A
公开(公告)日：1992-07-31
申请号：JP40035590
申请日：1990-12-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , HONDA TOSHIHISA , UCHIUMI YOSHIKAZU , WATAI HISAO
IPC分类号： C04B35/00 , C04B35/46 , C04B35/495 , H01B3/12
摘要： PURPOSE:To increase the range of dielectric constant, raise a Q value, reduce and stabilize the temperature coefficient and provide high performance of IC substrates for microwaves using the resultant composition by providing the aforementioned composition, expressed by the general formula and further including Mn2O3 therein. CONSTITUTION:The aforementioned dielectric porcelain for high frequency is formed from a composition, expressed by the general formula [(x) is 0.42-0.54; (y) is 0.06-0.18; (z) is 0.4; (m) is 0.05-0.7; (n) is 0-1; (x+y) is 0.61 and prepared by further adding

10. 发明专利

JPH0473806A DIELECTRIC PORCELAIN MATERIAL FOR MICROWAVE 失效
公开(公告)号：JPH0473806A
公开(公告)日：1992-03-09
申请号：JP18619690
申请日：1990-07-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMADA AKIRA , HONDA TOSHIHISA , WATAI HISAO , SAITO KIYOSHI , UCHIUMI YOSHIKAZU
IPC分类号： C04B35/46 , C04B35/468 , H01B3/12 , H01G4/12 , H01P7/10
摘要： PURPOSE:To simultaneously obtain high specific dielectric constant, high Q value (1/dielectric loss), a small and stable temperature characteristic in a microwave frequency region by using a material of specific composition. CONSTITUTION:Formula I shows component composition. That is, a part of Sm2O3 contained in BaO-TiO2-Sm2O3 porcelain is replaced by component (SrO.CeO2) and component (CaO.CeO2) to increase Q-value while component SrTiO3 is contained to increase specific dielectric constant. In the formula I expressed by a molar fraction, 0.1

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