专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH03187234A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03187234A
公开(公告)日：1991-08-15
申请号：JP32624589
申请日：1989-12-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIGUCHI HIDEYO , ISHII MITSUO
IPC分类号： H01L21/52
摘要： PURPOSE:To obtain a sufficient bonding strength without scrubbing by a method wherein a plate-shaped solder having a sufficiently smaller area than the area of the bonding surface of an optical semiconductor chip is provided. CONSTITUTION:A plate-shaped solder 2 having a sufficiently smaller area than the area of the bonding surface of a semiconductor chip 1 is placed between the semiconductor chip 1 and a bonding part. The semiconductor chip 1, the solder 2 and the bonding part are heated to a temperature higher than the melting point of the solder and a pressure is applied to the upper part of the semiconductor chip 1 to bond the semiconductor chip 1 to the bonding part with the solder 2. When the solder 2, for instance AuSn solder, is mashed by the optical semiconductor chip 1, as the area of the solder is small, the new solder which is not covered with an oxide film 3 bursts forth and the oxide film 3 is cut to pieces and the gap between the optical semiconductor chip 1 and the bonding part is filled with the new solder. With this constitution, a sufficient bonding strength can be obtained without scrubbing.

2. 发明专利

JPH01183171A MANUFACTURE OF SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPH01183171A
公开(公告)日：1989-07-20
申请号：JP730688
申请日：1988-01-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIZUOCHI HITOSHI , HIGUCHI HIDEYO
IPC分类号： H01L31/10
摘要： PURPOSE:To obtain a photodetector having equivalent characteristics to those of a conventional one by a liquid growing method(LPE) by forming a stripelike groove having a side face on a plane A (111) on a substrate made of InP on its upper face in a plane (100). CONSTITUTION:A substrate 1 having an upper face in a plane (100) is chemically etched in a direction for forming a plane A (111) on its side face to form a stripelike groove 8. Then, a light absorption layer 2 mad of N type InGaAs and a window layer 3 made of P-type InP are grown by the LPE. Accordingly, the upper face of the layer 2 also becomes a plane A (111), and the layer 3 made of InP can be grown thereon by the LPE without causing melt-back. Since the substrate 1 itself using its upper face in a plane (100) is employed, the isolation of a chip can be performed by cleaving, the isolation of the chip does not give an adverse influence thereto. Thus, a semiconductor photodetector in which its characteristics are stabilized is obtained by the LPE.

3. 发明专利

JPH01129487A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01129487A
公开(公告)日：1989-05-22
申请号：JP28996687
申请日：1987-11-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO YOUSUKE , HIGUCHI HIDEYO
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To reduce electrostatic capacitance due to oppositely electrodes, and to modulate a semiconductor laser device at high speed by removing a growth layer up to an insulating substrate and forming one electrode and getting rid of the growth layer up to a clad layer and shaping the other electrode. CONSTITUTION:An N electrode 1, a P electrode 2 formed onto a P-InP lower clad layer 8, an SiO2 film 3 for preventing a short circuit, an N-InGaAsP contact layer 4, an N-InP upper clad layer 5, buried layers 6, 7 and an active layer, 9 as a light-emitting region are shaped onto an insulating substrate 10. Currents are constricted by the buried layers 6, 7, and currents are injected efficiently into the active layer 9. The electrodes 3, 2 are formed on the crystal growth surface side, thus reducing electrostatic capacitance by the electrodes 1, 2, then allowing modulation at high speed. Even when the electrode 1 is shaped through isolation by a striped trench reaching the substrate 10, the same effect is acquired.

4. 发明专利

JPS63248141A MEASURING DEVICE FOR OPTICAL SEMICONDUCTOR CHARACTERISTIC 失效
公开(公告)号：JPS63248141A
公开(公告)日：1988-10-14
申请号：JP8317187
申请日：1987-04-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L21/66 , H01L33/58
摘要： PURPOSE:To measure the characteristics of an optical semiconductor in the state of a wafer by a method wherein the title device is provided with an optical fiber with a spherical lens, an automatic optical axis matching unit, a photo output meter and an optical spectrum analyzer. CONSTITUTION:When the point of a probe electrode 3 comes into contact to a surface electrode 12, a current flows to an LED 11 through an electrode stand 1 and light 14 is emitted through a window 13. The light reaches an automatic optical axis matching unit 8 via an optical fiber 7 with a spherical lens and the unit 8 transfers the fiber to a position of the maximum coupling efficiency. After this, the light 14 is measured its output value by a meter 9 and the central wavelength and the half-value width of the wavelength are measured by a spectrum analyzer 10. By this constitution, as the measurement of the fiber coupling output characteristic and the optical spectrum characteristic of an optical semiconductor is conducted in the state of a wafer and the semiconductor can be preselected, the inspecting yield in after it is assembed is improved.

5. 发明专利

JPS63198380A CHIP-CARRIER TYPE PHOTO-SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63198380A
公开(公告)日：1988-08-17
申请号：JP3201887
申请日：1987-02-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L31/0248 , H01L21/60 , H01L23/13 , H01L31/0203 , H01L33/62
摘要： PURPOSE:To make the handling easy and to prevent the damage due to a drop, a rotation or the like by forming protruding parts, whose height is higher than the top of a metal wire which connects a photo-semiconductor device to a metallized terminal, at required parts on the face where the photo-semiconductor device for a carrier unit is mounted. CONSTITUTION:Protruding parts 5 which have been installed to protect a semiconductor photodetector (PD) 3 and an Au wire 4 are formed to be higher than the top of the Au wire 4 at required parts on the face where the PD 3 for a carrier unit 1 and the Au wire 4 have been mounted, e.g. in such a way that the protruding parts surround the PD 3 and the An wire 4 on both sides of the carrier unit 1. By this setup, it is possible to prevent the damage of the PD 3 and the Au wire 4 due to a drop, a rotation or the like while a chip- carrier type photo-semiconductor device is assembled, inspected and transferred; it becomes easy to handle the device.

6. 发明专利

JPS63161680A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPS63161680A
公开(公告)日：1988-07-05
申请号：JP31037886
申请日：1986-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA KAZUTOMI , HIGUCHI HIDEYO
IPC分类号： H01L31/10 , H01L31/02 , H01L31/103
摘要： PURPOSE:To improve photodetection efficiency and improve response characteristics by providing a photodetecting window with a dome shape. CONSTITUTION:A light 8 applied to a photodetector enters through a photodetecting window 7. Because of the dome shape of the window 7, the light 8 is refracted at the window 5 and condensed toward the center part of a P-N junction 3. The light which reaches the P-N junction 3 is absorbed by a depletion layer which is spread in the junction 3 and electron-hole pairs are produced. The pairs are drifted by an electric field induced by a reverse bias voltage applied to the P-N junction beforehand and are taken out as a photocurrent. At that time, as the light is condensed by the dome-shaped photodetecting window, the light corresponding to the area larger than the area of the P-N junction can be introduced into the P-N junction so that photodetection efficiency can be improved.

7. 发明专利

JPS612371A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPS612371A
公开(公告)日：1986-01-08
申请号：JP12414584
申请日：1984-06-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBA TETSUO , TAKAHASHI KAZUHISA , IKEDA KENJI , HIGUCHI HIDEYO
IPC分类号： H01L31/10 , H01L31/02 , H01L31/0203
摘要： PURPOSE:To prevent the increase of dark currents, and to improve reliability by mounting a semiconductor photodetector using a polyimide film as a surface protective film into a package hermetically sealed while employing a gas containing oxygen as an atmospheric gas. CONSTITUTION:A photodiode 1 placed onto a heat sink 2 is mounted to a discoid stem 4, and lead wires 3 are connected to electrodes 9 fitted through glass for sealing. The surface of the photodiode 1 is protected by using a polyimide film. A cap 6 is installed to the upper section of the stem 4, and a package hermetically sealed by fixing glass 8 for sealing to a glass plate 7 for a glass window for taking in incident beams 10 in an opening in the upper surface of the cap 6 is constituted. Dried air 5 is encapsulated into the hermetically sealed package as an atmospheric gas.

8. 发明专利

JPS60186076A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS60186076A
公开(公告)日：1985-09-21
申请号：JP4162084
申请日：1984-03-05
申请人： NIPPON TELEGRAPH & TELEPHONE , MITSUBISHI ELECTRIC CORP
发明人： FUKUDA MITSUO , HIGUCHI HIDEYO , NAMISAKI HIROBUMI , SUZAKI WATARU
IPC分类号： H01L23/20 , H01L33/30 , H01L33/48 , H01S5/00 , H01S5/022
摘要： PURPOSE:To improve the reliability by employing atmospheric gas in a package for gastightly sealing a semiconductor light emitting element gas which contains oxygen, thereby suppressing the deterioration of the element. CONSTITUTION:A heat sink 2 in which a BCLD (Buried Crescent LD) chip 1 is soldered is mounted on a stem 4. Then, a cap 6 is welded to the stem 4 in dry air atmosphere 5. The chip 1 is gastightly sealed in the dry air atmosphere gas in the package. Since the gas 5 is as dry air, the deterioration can be improved without rising a dew point.

9. 发明专利

JPS6029081B2 失效
公开(公告)号：JPS6029081B2
公开(公告)日：1985-07-09
申请号：JP8580778
申请日：1978-07-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： IKEDA KENJI , HIGUCHI HIDEYO , HORIKIRI KENJI
IPC分类号： G02B6/42 , G02B3/00 , H01L33/58 , H01L33/62 , H01S5/00

10. 发明专利

JPS5756936A Assembling method for semiconductor element 失效
标题翻译：半导体元件的组装方法
公开(公告)号：JPS5756936A
公开(公告)日：1982-04-05
申请号：JP13248580
申请日：1980-09-23
申请人： Mitsubishi Electric Corp
发明人： OOMURA ETSUJI , HIGUCHI HIDEYO
IPC分类号： H01L21/52 , H01L21/58 , H01S5/00
CPC分类号： H01L24/83 , H01L24/32 , H01L2224/8319 , H01L2224/8385 , H01L2924/01013 , H01L2924/01029 , H01L2924/07802
摘要： PURPOSE:To remove residual stress applied to a semiconductor element at an ambient temperature by compressing the periphery of the heat sink of metal at the temperature rising time of heat fusion and bonding while limiting the thermal expansion. CONSTITUTION:A copper heat sink 12 is placed on a base 21, is compressed by a piston 22, and the expansion DELTAL of the heat sink is set to zero at the temperature rising time, or equalized approximately to the thermal expansion Al of the semiconductor laser 11. With this configuration, when it is returned from melting time to ambient temperature, the residual stress due to the difference of the thermal expansion coefficients can be almost eliminated. Accordingly, the reliability of the laser 11 can be improved.
摘要翻译：目的：通过在限制热膨胀的同时在热熔融和粘合的温度上升时间压缩金属散热器的周边来消除在环境温度下施加到半导体元件的残留应力。构成：将铜散热器12放置在基座21上，被活塞22压缩，并且散热器的膨胀DELTAL在升温时间被设定为零，或大致相当于半导体的热膨胀Al 通过这种结构，当从熔融时间返回到环境温度时，可以几乎消除由于热膨胀系数的差异引起的残余应力。因此，能够提高激光器11的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式