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1. 发明专利

JP2006322879A HYDROGEN GAS DETECTION SENSOR AND METHOD FOR MANUFACTURING IT 审中-公开
公开(公告)号：JP2006322879A
公开(公告)日：2006-11-30
申请号：JP2005147878
申请日：2005-05-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKAZAKI SHINJI , HATAYAMA TAKESHI , HIRANAKA KOICHI , YAMADA OSAMU
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen gas detection sensor capable of reducing variations in electric conductivity and stably detecting the leakage of hydrogen gas. SOLUTION: In the hydrogen gas detection sensor, a detection film 3 overlies a substrate 1 is constituted of both catalyst particles 19 which act in such a way as to adsorb hydrogen gas and dissociate it into protons (H + ) and electrons (e) and metal oxide particles 18 of which the electric conductivity increases due to reaction with the protons (H + ) and the electrons (e) generated by the catalytic action. The metal oxide particles 18 have a structure for dispersively carrying the catalyst particles 19 having a smaller diameter than that of the metal oxide particles 18. An area ratio between the surface area of a substrate in which the detection film 3 overlies the substrate 1 and the area of a substrate exposed due to the absence of the overlying detection film 3 in the surface area of the substrate is 4% or less. COPYRIGHT: (C)2007,JPO&INPIT

2. 发明专利

JP2006201100A Hydrogen gas detection sensor 审中-公开
标题翻译：氢气检测传感器
公开(公告)号：JP2006201100A
公开(公告)日：2006-08-03
申请号：JP2005015094
申请日：2005-01-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMADA OSAMU , HIRANAKA KOICHI , HATAYAMA TAKESHI
IPC分类号： G01N27/16
摘要： PROBLEM TO BE SOLVED: To provide a catalytic combustion type hydrogen gas detection sensor excellent in a poisoning resistance of platinum catalyst against carbon monoxide.
SOLUTION: This hydrogen gas detection sensor for detecting hydrogen gas by converting thermoelectrically heat generated by a catalytic reaction between the hydrogen gas and a catalyst to detect a generated voltage is provided with a prescribed thickness of thermoelectric variable film 2, a catalyst film 3 layered via an insulating film 13 in a substantial half of one side on a thermoelectric variable film 2 surface, and a heating means 9 for heating the catalyst film 3 up to a prescribed temperature. The catalyst film 3 carries a platinum (Pt) fine particles on a particle of a metal oxide, and a temperature change generated with the heat by the catalytic reaction of oxidation due to contact between the hydrogen gas and the catalyst film 3 is detected to detect the hydrogen gas.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供铂催化剂对一氧化碳的耐中毒性优异的催化燃烧型氢气检测传感器。解决方案：该氢气检测传感器通过将氢气和催化剂之间的催化反应产生的热电转换成检测产生的电压来检测氢气，设置有规定厚度的热电可变膜2，催化剂膜通过绝缘膜13在热电可变膜2表面的一侧的大部分一半中分层，以及加热装置9，用于将催化剂膜3加热至规定温度。催化剂膜3在金属氧化物的颗粒上载有铂（Pt）微粒，并且检测由于氢气和催化剂膜3之间的接触引起的氧化催化反应而产生的温度变化，以检测氢气。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005331364A Hydrogen gas sensing film and hydrogen gas sensor 审中-公开
标题翻译：氢气感测膜和氢气传感器
公开(公告)号：JP2005331364A
公开(公告)日：2005-12-02
申请号：JP2004149991
申请日：2004-05-20
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HIRANAKA KOICHI , YAMADA OSAMU , HATAYAMA TAKESHI
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen gas sensor using a hydrogen gas sensing film having high sensitivity and high speed response.
SOLUTION: The hydrogen gas sensor is constituted by providing a hydrogen gas sensing film 10 with a predetermined film thickness, which is changed in electric resistance when a proton formed by the dissociation of hydrogen gas is injected and reduced or the proton is eliminated to be oxidized, on a pair of the electrodes 20 provided on an insulating substrate. The hydrogen gas sensing film 10 is constituted of an aggregate of microcrystalline particles based on tungsten oxide and a catalyst metal in an oxidized state is provided on the surfaces of the microcrystalline particle tungsten oxide 1.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用具有高灵敏度和高速度响应的氢气感测膜的氢气传感器。解决方案：氢气传感器是通过提供具有预定膜厚度的氢气检测膜10构成的，当通过氢气的解离形成的质子被注入和减少或者质子被消除时，电阻变化在被设置在绝缘基板上的一对电极20上被氧化。在微晶粒子氧化钨1的表面上设置氢气感测膜10，其由基于氧化钨的微晶粒子和氧化态的催化剂金属的聚集体组成。（C）2006，JPO＆NCIPI

4. 发明专利

JP2008057976A Hydrogen gas detection sensor 审中-公开
标题翻译：氢气检测传感器
公开(公告)号：JP2008057976A
公开(公告)日：2008-03-13
申请号：JP2005238160
申请日：2005-08-19
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMADA OSAMU , HIRANAKA KOICHI , HATAYAMA TAKESHI
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To simply discover the leak place of hydrogen gases from a plurality of areas with high precision.
SOLUTION: The hydrogen gas detection sensor is changed in electric resistance upon the detection of the hydrogen gas, and has: the common electrode 2 formed to the long side part in the longitudinal direction of the end part of a strip like insulating base material surface; a sensor cell 3 connected to the common electrode 2 at its one end and composed of detection films, each of which has a predetermined small region, linearly arranged at a predetermined interval; and a the detection electrode 4 which forms a pair along with the common electrode 2 and is formed to the other end part of the sensor cell 3. The detection position of the hydrogen gas is calculated on the basis of the position of the sensor cell 3 which applies bias voltage to the common electrode 2, and detects a change in the resistance value between the common electrode 2 and the detection electrode 4 of the sensor cell 3 to detect the change of the resistance value.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：简单地从多个区域高精度地发现氢气的泄漏位置。解决方案：氢气检测传感器在检测到氢气时电阻发生变化，并且具有：在带状绝缘基底的端部的长度方向上形成的公共电极2 材料表面; 传感器单元3，其一端连接到公共电极2，并且由检测膜构成，每个检测膜具有以预定间隔线性排列的预定小区域; 以及与公共电极2一起形成一对并且形成在传感器单元3的另一端部的检测电极4.基于传感器单元3的位置来计算氢气的检测位置其向公共电极2施加偏置电压，并且检测传感器单元3的公共电极2和检测电极4之间的电阻值的变化，以检测电阻值的变化。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007178168A Hydrogen gas detection sensor and its manufacturing method 审中-公开
标题翻译：氢气检测传感器及其制造方法
公开(公告)号：JP2007178168A
公开(公告)日：2007-07-12
申请号：JP2005374441
申请日：2005-12-27
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HATAYAMA TAKESHI , HIRANAKA KOICHI , YAMADA OSAMU
IPC分类号： G01N27/12 , G01N27/04
摘要： PROBLEM TO BE SOLVED: To provide a hydrogen gas detection sensor which reduces an irregularity of conductivity and stably detects a leak of hydrogen gas.
SOLUTION: The manufacturing method of the hydrogen gas detection sensor having a detection film constituted by dispersing catalyst particles throughout metal oxide particles to support them, includes: a process S2 of performing the ion exchange of a metal acid salt aqueous solution becoming a precursor for forming a metal oxide to obtain a water-containing oxide sol; a process S3 of adding a solution of a catalytic metal being a catalyst precursor and an alcohol (C
n H
n+1 OH) type organic solvent to the water-containing oxide sol to uniformly disperse and mix them in order to mix a catalyst; a process S4 of coating an insulating substrate with a mixed solution of the water-containing oxide sol mixed with the catalyst in a predetermined thickness; and a sintering process S5 of sintering the film coated with the mixed solution of the water-containing oxide sol to form the detection film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低导电性不均匀并稳定地检测氢气泄漏的氢气检测传感器。解决方案：具有通过将催化剂颗粒分散在金属氧化物颗粒中以支撑它们而构成的检测膜的氢气检测传感器的制造方法包括：进行金属酸盐水溶液的离子交换成为用于形成金属氧化物以获得含水氧化物溶胶的前体; 将作为催化剂前体的催化剂金属和醇（C）的溶液加入到含水氧化物中的方法S3 溶胶以均匀分散并混合它们以混合催化剂; 用与预定厚度的催化剂混合的含水氧化物溶胶的混合溶液涂覆绝缘基板的工艺S4; 以及烧结方法S5，烧结涂覆有含水氧化物溶胶的混合溶液的膜以形成检测膜。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005345338A Coating film pigment for hydrogen gas detection, coating film for hydrogen gas detection, and hydrogen gas detection tape 审中-公开
标题翻译：用于氢气检测的涂胶膜，氢气检测用涂膜和氢气检测带
公开(公告)号：JP2005345338A
公开(公告)日：2005-12-15
申请号：JP2004166846
申请日：2004-06-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HIRANAKA KOICHI , YAMADA OSAMU , HATAYAMA TAKESHI
IPC分类号： G01N31/00 , G01N31/10 , G01N31/22 , H01M8/04
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a coating film pigment for hydrogen gas detection, a coating film for hydrogen gas detection, and a hydrogen gas detection tape capable of detecting a leak spot of hydrogen gas on a pipe, a container or the like with high sensitivity. SOLUTION: The coating film for hydrogen gas detection and the hydrogen gas detection tape including a pigment constituted of an aggregate 6 of crystal particles mainly composed of tungstic oxide and including a catalyst metal 2 in the oxidation state on the surface of the crystal particle tungstic oxide are applied on the surface of a gas pipe, a container or the like containing hydrogen gas, and reduced by injection of protons generated by dissociation of the hydrogen gas, to thereby detect a hydrogen gas leak by a hue change. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供用于氢气检测的涂膜颜料，用于氢气检测的涂膜和能够检测管，容器或其上的氢气泄漏点的氢气检测带喜欢高灵敏度。解决方案：用于氢气检测的涂膜和包含由主要由钨氧化物构成的结晶颗粒的聚集体6和在晶体的表面上具有处于氧化态的催化剂金属2的颜料构成的颜料的氢气检测带颗粒状钨氧化物被施加在含有氢气的气体管，容器等的表面上，并且通过注入由氢气解离产生的质子而减少，从而通过色调变化来检测氢气泄漏。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004277800A Method and apparatus for depositing carbon thin film 审中-公开
公开(公告)号：JP2004277800A
公开(公告)日：2004-10-07
申请号：JP2003069986
申请日：2003-03-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C16/26 , C23C16/27 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for depositing a carbon thin film in which the carbon thin film is deposited by using a plasma CVD method at a high speed to enhance productivity while ensuring the film quality of excellent hardness and wear resistance.
SOLUTION: Plasma is generated by supplying the power between an electrode 2 and an opposing electrode 4, and a carbon thin film is deposited on a base material 3 by the bias voltage at optimum temperature by controlling heat generation in the base material 3 by a cooling unit 19. In particular, the ion collision energy is increased and heat generation is increased thereby when the film of high hardness is deposited at high bias voltage or when the power density of the base material is increased to increase the film deposition speed. Temperature rise is controlled by providing a cooling means, and the film is deposited with excellent productivity while maintaining excellent characteristics of the carbon thin film.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2004277798A Film deposition system and film deposition method 审中-公开
公开(公告)号：JP2004277798A
公开(公告)日：2004-10-07
申请号：JP2003069984
申请日：2003-03-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUDA EIJI , YAMADA OSAMU , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C14/56 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To solve problems that it is difficult in the matter of dusting and a load-locking structure caused by using a movable mechanism when the surface of a three-dimensional substrate is subjected to a film deposition in a rotation-revolution system heretofore, it is difficult in the matter of power supply, temperature control, and automation of mounting the substrate, and much time are necessary to mounting cannot be easily and automatically fitted, and a large amount of film deposition samples and much time are necessary for a process condition and a sample film deposition. SOLUTION: The film deposition system has a film deposition chamber group consisting of at least two film deposition chambers arranged on substantially the same surfaces and capable of simultaneously performing film deposition of a plurality of substrates to be trated, and comprises a substrae conveying means slidable at least on the surface and in the vertical direction, and a substrate supporting stand mounted on the substrate conveying means. The substrate placed on the substrate supporting stand can be conveyed in or out to/from the film deposition chamber by the straight movement action of the substrate conveying means. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004068091A Apparatus and method for film-forming treatment 审中-公开
标题翻译：用于成膜处理的装置和方法
公开(公告)号：JP2004068091A
公开(公告)日：2004-03-04
申请号：JP2002229780
申请日：2002-08-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUDA EIJI , YAMADA OSAMU , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C16/50 , C23C16/26 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To solve a problem that the prior arts compose an entire apparatus while including peripheral functions other than a film-forming function such as a load lock chamber or a substrate transfer chamber, and consequently that the whole apparatus becomes large, a facility cost increases, maintenance, model change and new model launching take much time, and flexibility to the production quantity is poor. SOLUTION: An apparatus for film-forming treatment has at least two groups of film-forming chambers 1 which can perform film-forming treatment simultaneously for several substrates 2 to be film-formed, wherein components in the film-forming chamber 1 are substantially similarly configured and arranged with respect to the substrates 2 to be film-formed; and further has at least one or more preliminary vacuum chambers 10 provided in an exhaust path leading to an exhaust means 11 for exhausting the air from the film-forming chamber 1. A small apparatus which can complete all processes of import, export, vacuum drawing and film-forming treatment in one unit, is realized by using the above apparatus for film-forming treatment. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了解决现有技术构成整个装置同时包括诸如装载锁定室或基板传送室之类的成膜功能的外围功能的问题，并且因此整个装置变成设备成本增加，维护，型号变更和新型发布需要很多时间，生产量的灵活性差。解决方案：一种用于成膜处理的设备具有至少两组成膜室1，它们可以对要成膜的几个基板2同时进行成膜处理，其中成膜室1中的成分基本上类似地构造并相对于待成膜的基板2布置; 并且还具有至少一个或多个设置在通向排出装置11的排气路径中的初级真空室10，用于从成膜室1排出空气。可以完成进口，出口，真空吸附的所有过程的小型装置并且通过使用上述成膜处理装置来实现一个单位的成膜处理。版权所有（C）2004，JPO

10. 发明专利

JP2008057975A Hydrogen gas sensor and combustible gas detection sensor 审中-公开
标题翻译：氢气传感器和可燃气体检测传感器
公开(公告)号：JP2008057975A
公开(公告)日：2008-03-13
申请号：JP2004368795
申请日：2004-12-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMADA OSAMU , HIRANAKA KOICHI , HATAYAMA TAKESHI
IPC分类号： G01N27/12
摘要： PROBLEM TO BE SOLVED: To provide a gas detector which simply detects the detection position of a hydrogen gas with high precision, and discovers the leak place of the hydrogen gas. SOLUTION: The gas detection sensor changed in resistance upon the detection of the gas is equipped with: a detection film 5 formed into an almost strip like shape; the resistance layer 4 joined and laminated to the surface in the longitudinal direction of the detection film 5; the first electrode 1 joined to the surface in the longitudinal direction of the detection film 5 and formed on a side not joined to the resistance layer 4 to apply predetermined bias voltage; and the second and third electrodes formed to both ends in the longitudinal direction on the resistance layer 4 on the side not joined to the detection film 5. The gas detection position of the detection film 5 is calculated by measuring the conductive characteristics between the first, second and third electrodes through the resistance layer 4. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够高精度地检测氢气的检测位置的气体检测器，并且发现氢气的泄漏位置。气体检测传感器在检测到气体时阻力变化配备有：形成为大致条状的检测膜5; 电阻层4与检测膜5的长度方向的表面接合并层压; 第一电极1在检测膜5的长度方向上与表面接合并形成在未接合到电阻层4的一侧以施加预定的偏置电压; 并且第二和第三电极在不连接到检测膜5的一侧上的电阻层4上沿纵向两端形成。检测膜5的气体检测位置通过测量第一，第二和第三电极穿过电阻层4.版权所有（C）2008，JPO＆INPIT

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