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1. 发明专利

JP2004300464A Film-forming apparatus 审中-公开
标题翻译：电影制作装置
公开(公告)号：JP2004300464A
公开(公告)日：2004-10-28
申请号：JP2003091893
申请日：2003-03-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROSHI , YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO
IPC分类号： C23C14/50 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve a throughput of an apparatus, by shortening a period required for exhausting air from a load lock chamber capable of arranging several substrates therein.
SOLUTION: The film-forming apparatus provided with the load lock chamber for reducing the pressure from ambient pressure, an exhausting means for depressurization, a film-forming chamber which can be depressurized into a predetermined pressure, a gas supply means for the film-forming chamber, an exhausting means for depressurization, and a power supply means for generating plasma, comprises at least one load lock chamber which can arrange a plurality of substrates therein, installs a first openable and closable pressure partition capable of blocking out the pressure from the atmospheric air side, and a second pressure partition capable of protecting a vacuum side from the pressure, and has a decompression space installed inside for the purpose of decreasing the size of a space formed between an inner wall and the substrate, or between the substrates. Then, the apparatus can shorten the period required for exhausting air from the load lock chamber.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过缩短从能够在其中布置多个基板的负载锁定室排出空气所需的时间段来提高装置的生产量。解决方案：设置有用于降低环境压力的负载锁定室的成膜设备，用于减压的排气装置，可以减压到预定压力的成膜室，用于成膜室，用于减压的排气装置和用于产生等离子体的供电装置，包括至少一个能够在其中布置多个基板的装载锁定室，安装能够阻挡压力的第一可开启和关闭的压力分隔件以及能够保护真空侧免受压力的第二压力分隔壁，并且为了减小形成在内壁和基板之间的空间的尺寸，或者在基板。然后，该装置可以缩短从负载锁定室排出空气所需的时间。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2003066115A Fail analysis method and apparatus of semiconductor device 审中-公开
标题翻译：失效分析方法和半导体器件的设备
公开(公告)号：JP2003066115A
公开(公告)日：2003-03-05
申请号：JP2001251227
申请日：2001-08-22
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROSHI
IPC分类号： G01R31/302 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a failure analysis method and a failure analysis apparatus for a semiconductor device that can accurately specify a failed location of the semiconductor device using infrared laser beams.
SOLUTION: The rear of a semiconductor device mounting a semiconductor device is polished (step 1). Then, a specific location on the polished rear of the semiconductor substrate is marked (step 2). Then, a specific location on the surface of the semiconductor substrate that becomes a position being symmetrical to the marked specific location about a plane is marked (step 2). Then, infrared laser beams are applied from the rear or front of the semiconductor substrate to specify the failed location in the semiconductor device (step 3). Then, the failed location is specified according to a marking position when analyzing the failed location by a charged beam apparatus (step 4).
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种半导体器件的故障分析方法和故障分析装置，其可以使用红外激光束来准确地指定半导体器件的故障位置。解决方案：安装半导体器件的半导体器件的后部被抛光（步骤1）。然后，标记半导体衬底抛光后面的特定位置（步骤2）。然后，标记在半导体衬底表面上成为与标记的关于平面的特定位置对称的位置的特定位置（步骤2）。然后，从半导体衬底的后部或前部施加红外激光束以指定半导体器件中的故障位置（步骤3）。然后，通过带电束装置分析故障位置时，根据标记位置指定故障位置（步骤4）。

3. 发明专利

JP2004277800A Method and apparatus for depositing carbon thin film 审中-公开
公开(公告)号：JP2004277800A
公开(公告)日：2004-10-07
申请号：JP2003069986
申请日：2003-03-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C16/26 , C23C16/27 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for depositing a carbon thin film in which the carbon thin film is deposited by using a plasma CVD method at a high speed to enhance productivity while ensuring the film quality of excellent hardness and wear resistance.
SOLUTION: Plasma is generated by supplying the power between an electrode 2 and an opposing electrode 4, and a carbon thin film is deposited on a base material 3 by the bias voltage at optimum temperature by controlling heat generation in the base material 3 by a cooling unit 19. In particular, the ion collision energy is increased and heat generation is increased thereby when the film of high hardness is deposited at high bias voltage or when the power density of the base material is increased to increase the film deposition speed. Temperature rise is controlled by providing a cooling means, and the film is deposited with excellent productivity while maintaining excellent characteristics of the carbon thin film.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2004277798A Film deposition system and film deposition method 审中-公开
公开(公告)号：JP2004277798A
公开(公告)日：2004-10-07
申请号：JP2003069984
申请日：2003-03-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUDA EIJI , YAMADA OSAMU , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C14/56 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To solve problems that it is difficult in the matter of dusting and a load-locking structure caused by using a movable mechanism when the surface of a three-dimensional substrate is subjected to a film deposition in a rotation-revolution system heretofore, it is difficult in the matter of power supply, temperature control, and automation of mounting the substrate, and much time are necessary to mounting cannot be easily and automatically fitted, and a large amount of film deposition samples and much time are necessary for a process condition and a sample film deposition. SOLUTION: The film deposition system has a film deposition chamber group consisting of at least two film deposition chambers arranged on substantially the same surfaces and capable of simultaneously performing film deposition of a plurality of substrates to be trated, and comprises a substrae conveying means slidable at least on the surface and in the vertical direction, and a substrate supporting stand mounted on the substrate conveying means. The substrate placed on the substrate supporting stand can be conveyed in or out to/from the film deposition chamber by the straight movement action of the substrate conveying means. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2004068091A Apparatus and method for film-forming treatment 审中-公开
标题翻译：用于成膜处理的装置和方法
公开(公告)号：JP2004068091A
公开(公告)日：2004-03-04
申请号：JP2002229780
申请日：2002-08-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OKUDA EIJI , YAMADA OSAMU , IMOTO HIDEO , HATAYAMA TAKESHI , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C16/50 , C23C16/26 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To solve a problem that the prior arts compose an entire apparatus while including peripheral functions other than a film-forming function such as a load lock chamber or a substrate transfer chamber, and consequently that the whole apparatus becomes large, a facility cost increases, maintenance, model change and new model launching take much time, and flexibility to the production quantity is poor. SOLUTION: An apparatus for film-forming treatment has at least two groups of film-forming chambers 1 which can perform film-forming treatment simultaneously for several substrates 2 to be film-formed, wherein components in the film-forming chamber 1 are substantially similarly configured and arranged with respect to the substrates 2 to be film-formed; and further has at least one or more preliminary vacuum chambers 10 provided in an exhaust path leading to an exhaust means 11 for exhausting the air from the film-forming chamber 1. A small apparatus which can complete all processes of import, export, vacuum drawing and film-forming treatment in one unit, is realized by using the above apparatus for film-forming treatment. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了解决现有技术构成整个装置同时包括诸如装载锁定室或基板传送室之类的成膜功能的外围功能的问题，并且因此整个装置变成设备成本增加，维护，型号变更和新型发布需要很多时间，生产量的灵活性差。解决方案：一种用于成膜处理的设备具有至少两组成膜室1，它们可以对要成膜的几个基板2同时进行成膜处理，其中成膜室1中的成分基本上类似地构造并相对于待成膜的基板2布置; 并且还具有至少一个或多个设置在通向排出装置11的排气路径中的初级真空室10，用于从成膜室1排出空气。可以完成进口，出口，真空吸附的所有过程的小型装置并且通过使用上述成膜处理装置来实现一个单位的成膜处理。版权所有（C）2004，JPO

6. 发明专利

JP2004068092A Hard carbon film coated member and film deposition method 有权
公开(公告)号：JP2004068092A
公开(公告)日：2004-03-04
申请号：JP2002229781
申请日：2002-08-07
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANIDA TAKAHIKO , YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , HATAYAMA TAKESHI , YAMASHITA HIROSHI
IPC分类号： C23C14/06 , C23C28/00
摘要： PROBLEM TO BE SOLVED: To provide a member having a hard carbon film of excellent adhesiveness to a base material formed thereon, and a method for forming the member.
SOLUTION: An intermediate layer is provided between a base material 2 and a hard carbon film layer 5 as an adhesive layer to the hard carbon film layer 5 on the base material 2. The intermediate layer comprises a substrate layer 2 formed of a thin film of metal selected from a group of IVa, Va, VIa, VIIa, VIIIa and IVb group elements, and a mixed layer 4 formed of carbide of metal elements selected from a group of IVa, Va, VIa, VIIa, VIIIa and IVb group elements. Adhesiveness of the base material to the hard carbon film is improved thereby.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004300465A Sputtering apparatus 审中-公开
公开(公告)号：JP2004300465A
公开(公告)日：2004-10-28
申请号：JP2003091894
申请日：2003-03-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HATAYAMA TAKESHI , YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , TANIDA TAKAHIKO , YAMASHITA HIROSHI
IPC分类号： C23C14/34 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To solve a problem that a conventional film-forming apparatus is upsized and becomes expensive, because when a three-dimensional substrate is to be film-formed, in order to realize a uniform film thickness, the apparatus uses a table with a rotation and revolution mechanism for rotating a substrate to be film-formed, in a film-forming chamber.
SOLUTION: The sputtering apparatus is provided with a film-forming chamber 1 capable of being depressurized, a sample support 3 for arranging the substrate 2 to be film-formed in the film-forming chamber, a target 5 containing film-forming elements, a gas supply means 4, an exhausting means 11 for depressurization, and a power supply means 6a for applying voltage onto the target for generating plasma of a sputtering gas in a space between the substrate 2 to be film-formed and the target 5, wherein the target 5 is arranged so as to face the outer peripheral surface of the substrate 2 to be film-formed. Then, the apparatus can form a thin film with high uniformity, and can be miniaturized because of employing no rotation mechanism.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2004277799A Film-forming apparatus and cleaning method therefor 审中-公开
公开(公告)号：JP2004277799A
公开(公告)日：2004-10-07
申请号：JP2003069985
申请日：2003-03-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANIDA TAKAHIKO , YAMADA OSAMU , OKUDA EIJI , IMOTO HIDEO , HATAYAMA TAKESHI , YAMASHITA HIROSHI
IPC分类号： C23C14/22 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To reduce the dropping of a deposit on a deposition shield in an apparatus for forming a hard carbon film, and to efficiently plasma-cleaning the deposition shield.
SOLUTION: This film-forming apparatus arranges the deposition shields 11 and 12 with openings held on an insulation glass, inside a vacuum vessel 1 so as to cover two plasma sources, and a shutter 8 on the opening. The material of a sputter target 10 is deposited onto the deposition shield 11, and carbon is deposited onto the deposition shield 12. The film-forming apparatus has a configuration capable of independently electrically plasma-cleaning the deposition shields 11 and 12 which are connected to a pulsed power supply outside a vacuum unit, through a switching means.
COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2003077971A Evaluating method of semiconductor device and evaluating device 审中-公开
标题翻译：半导体器件和评估器件的评估方法
公开(公告)号：JP2003077971A
公开(公告)日：2003-03-14
申请号：JP2001265537
申请日：2001-09-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROSHI
IPC分类号： G01R31/02 , G01R31/302 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for easily and accurately evaluating continuity between two terminals of a semiconductor device (specially, a contact chain evaluation pattern) in a wafer state.
SOLUTION: The evaluating method includes a process for irradiating one terminal out of the two terminals of the semiconductor device with a focusing ion beam and providing a hole 20 reaching up to a semiconductor substrate 11, a process for embedding a conductive film 21 by a CVD method using the focusing ion beam in the hole, and a process for connecting an ammeter 22 between one terminal and a grounding potential, applying negative voltage from a constant power supply 23 to the other terminal out of the two terminals, scanning the upper part of the semiconductor device with an electronic beam by using a scanning electronic microscope and observing a secondary electronic image and a current change image of the semiconductor device.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于容易且准确地评估晶片状态的半导体器件的两个端子（特别是接触链评估图案）之间的连续性的方法。解决方案：评估方法包括用聚焦离子束从半导体器件的两个端子中的一个端子照射并提供到达半导体衬底11的孔20的处理，通过CVD嵌入导电膜21的工艺在孔中使用聚焦离子束的方法，以及在一个端子和接地电位之间连接电流表22的处理，将来自恒定电源23的负电压施加到两个端子中的另一个端子，扫描上部具有电子束的半导体器件，通过使用扫描电子显微镜观察二次电子图像和半导体器件的电流变化图像。

10. 发明专利

JP2003037141A Method for analyzing semiconductor element 审中-公开
标题翻译：分析半导体元件的方法
公开(公告)号：JP2003037141A
公开(公告)日：2003-02-07
申请号：JP2001225937
申请日：2001-07-26
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YAMASHITA HIROSHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for analyzing a semiconductor element which can analyze a faulty point in a minute area.
SOLUTION: An electron beam irradiates the vicinity of the faulty point 2 in the semiconductor element 1. A reaction product 3 is deposited. The semiconductor element 1 is covered by a thin film 4 comprising an element with small electron dispersion activity, and scanned by a converged ion beam. The faulty point 2 is sputter-etched until a thickness of the faulty point becomes 0.1 μm or less and analyzed by using a transmitting electron microscope. A minute part or a minute foreign particle can be observed and a structure can be analyzed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于分析可以分析微小区域中的故障点的半导体元件的方法。解决方案：电子束照射半导体元件1中的故障点2附近。沉积反应产物3。半导体元件1由包含具有小电子分散活性的元素的薄膜4覆盖，并且通过会聚的离子束进行扫描。故障点2被溅射蚀刻，直到故障点的厚度变为0.1μm以下，并使用透射电子显微镜进行分析。可以观察到一分钟或几分钟的异物，并且可以分析结构。

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