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1. 发明专利

JP2005210076A Deposition method of silicon nitride film, and manufacturing method of semiconductor device using the deposition method 审中-公开
标题翻译：硅酸盐膜的沉积方法和使用沉积方法的半导体器件的制造方法
公开(公告)号：JP2005210076A
公开(公告)日：2005-08-04
申请号：JP2004338459
申请日：2004-11-24
申请人： L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude , Semiconductor Leading Edge Technologies Inc , レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード , 株式会社半導体先端テクノロジーズ
发明人： HOSHI TAKASHI , SAITO TAKESHI , KIMURA TAKAKO , DUSSARAT CHRISTIAN , YANAGIDA KAZUTAKA
IPC分类号： C23C16/34 , H01L21/318
CPC分类号： C23C16/345 , H01L21/3185
摘要： PROBLEM TO BE SOLVED: To improve quality of a low-temperature silicon nitride film formed by LPCVD. SOLUTION: In LPCVD apparatus 10, silicon source materials (SiH 2 Cl 2 , SiCl 4 , SiCl 6 and the like) are supplied from an injector 11, and a mixed gas of ammonia (NH 3 ) and monomethylamine (CH 3 NH 2 ) as nitrogen source materials are supplied from an injector 12, and a silicon nitride film is thus formed on a silicon wafer 14 arranged on a boat 13. By adding monomethylamine to the source materials, a leakage characteristic of the film is improved even at low temperature (600°C to 450°C), resulting in improvement in film quality. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高通过LPCVD形成的低温氮化硅膜的质量。解决方案：在LPCVD装置10中，硅源材料（SiH 2 2 ，SiCl 4 ，SiCl < SB>等）从喷射器11供给，并且将氨（NH 3 SB 3）和一甲胺（CH 3 SB SB）的混合气体 >），由喷射器12供给氮源材料，由此在设置在舟皿13上的硅晶片14上形成氮化硅膜。通过向源材料添加一甲胺，即使在低温（600℃〜450℃），膜质量提高。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005005589A Method for improving quality of nitride film, and process for fabricating semiconductor device 有权
标题翻译：用于改善氮化物质量的方法以及用于制造半导体器件的方法
公开(公告)号：JP2005005589A
公开(公告)日：2005-01-06
申请号：JP2003169460
申请日：2003-06-13
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： HOSHI TAKASHI
IPC分类号： H01L21/318 , H01L21/00 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To reduce the content of chlorine in a nitride film without increasing the film deposition temperature.
SOLUTION: A first layer nitride film 21 is formed on a silicon substrate 10 by LPCVD at a film deposition temperature of 450°C using a gas containing chlorine, e.g. Si
2 Cl
6 , and NH
3 . Subsequently, annealing is performed using NH
3 as anneal gas 32. Chlorine 31 remaining on the surface of the first layer nitride film 21 reacts on the anneal gas 32 to produce reaction products 33 which leave the first layer nitride film 21. A nitride film consisting of a multilayer of nitride films 21, 22, ..., 2n is formed by repeating film deposition and annealing alternately.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在不增加膜沉积温度的情况下降低氮化膜中的氯含量。解决方案：通过LPCVD在450℃的膜沉积温度下使用含氯的气体，例如硅酸盐，在硅衬底10上形成第一层氮化物膜21。 Si Cl 6 和NH 3 。随后，使用NH 3 SB 3作为退火气体32进行退火。残留在第一层氮化物膜21的表面上的氯31在退火气体32上反应以产生反应产物33，其留下第一层氮化物通过重复膜沉积和退火交替形成由多层氮化物膜21,22，...，2n组成的氮化物膜。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005005537A Method for improving quality of nitride film, and process for fabricating semiconductor device 有权
标题翻译：用于改善氮化物质量的方法以及用于制造半导体器件的方法
公开(公告)号：JP2005005537A
公开(公告)日：2005-01-06
申请号：JP2003168349
申请日：2003-06-12
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： HOSHI TAKASHI
IPC分类号： H01L21/318 , H01L21/205 , H01L21/336 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To reduce the content of chlorine in a nitride film without increasing the film deposition temperature.
SOLUTION: A nitride film 12 is formed on a silicon substrate 11 by LPCVD at a film deposition temperature of 450°C using a gas containing chlorine, e.g. Si
2 Cl
6 , and NH
3 . Plasma containing hydrogen radicals 14 is generated at 400°C and the nitride film 12 is exposed thereto. Hydrogen radicals 14 introduced into the nitride film 12 bond to chlorine 13 to produce hydrogen chloride 15 which leaves the nitride film 12.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在不增加膜沉积温度的情况下降低氮化膜中的氯含量。解决方案：通过LPCVD在450℃的膜沉积温度下，使用含氯的气体，例如硅酸盐，形成氮化物膜12。 Si Cl 6 和NH 3 。在400℃下生成含氢自由基14的等离子体，将氮化膜12暴露于其中。引入到氮化物膜12中的氢原子14与氯13结合，产生离开氮化物膜12的氯化氢15.版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2006041337A Methods for manufacturing silicon nitride film and semiconductor device 有权
标题翻译：用于制造氮化硅薄膜和半导体器件的方法
公开(公告)号：JP2006041337A
公开(公告)日：2006-02-09
申请号：JP2004221490
申请日：2004-07-29
申请人： Semiconductor Leading Edge Technologies Inc , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社半導体先端テクノロジーズ
发明人： HOSHI TAKASHI , SAITO TAKESHI , KATO HISASHI , ORITO KOICHI
IPC分类号： H01L21/318 , H01L21/336 , H01L29/78
CPC分类号： H01L21/76802 , C23C16/345 , C23C16/45527 , H01L21/3185 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/8238 , H01L21/823864 , H01L29/6659 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon nitride film with high wet etch resistance by reducing the amount of chloric impurities in a silicon nitride film and a method for manufacturing a semiconductor device using the method. SOLUTION: This silicon nitride film manufacturing method forms a silicon nitride film on the surface of a base substance. This method comprises a first process for supplying a first gas containing silicon and chlorine to the above surface of the base substance, a second process for supplying a gas containing nitrogen to the surface of the base substance, and a third process for supplying a third gas containing hydrogen to the surface of the base substance. The method has a characteristic in repeating these processes in this order. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过减少氮化硅膜中的氯杂质的量来制造具有高耐湿蚀刻性的氮化硅膜的方法，以及使用该方法制造半导体器件的方法。解决方案：该氮化硅膜制造方法在基体表面上形成氮化硅膜。该方法包括向基体物质的上述表面供给含有硅和氯的第一气体的第一工序，向基体的表面供给含氮气体的第二工序，以及供给第三气体的第三工序将氢气包含在基体表面。该方法具有以下顺序重复这些处理的特征。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005079308A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2005079308A
公开(公告)日：2005-03-24
申请号：JP2003307146
申请日：2003-08-29
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： SASAKI TAKAOKI , HOSHI TAKASHI
IPC分类号： C23C16/42 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/324 , H01L21/336 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L21/31612 , H01L21/31645 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To prevent the diffusion of N into the vicinity of an interface while improving the interface between an Si substrate and a gate insulating film.
SOLUTION: The gate insulating film comprising an insulating film at least containing nitrogen is formed on the substrate, and heat treatment of not more than about 500 msec is applied from the upper part of the gate insulating film employing a flush lamp. Thereafter, a gate electrode is formed on the gate insulating film. Upon forming the gate insulating film, the laminated film of SiO
2 film and Si
x N
(1-x) film, the laminated film of SiO
2 film, HfO
2 film, and Si
x N
(1-x) film or the like, concretely for example, is formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止N扩散到界面附近，同时改善Si衬底和栅极绝缘膜之间的界面。解决方案：在基板上形成包括至少含有氮的绝缘膜的栅极绝缘膜，并且使用冲洗灯从栅极绝缘膜的上部施加不超过约500msec的热处理。此后，在栅极绝缘膜上形成栅电极。在形成栅极绝缘膜时，将SiO 2 膜和Si N （1-x）膜的叠层膜， SiO 2 SBB薄膜，HfO 2 SBB薄膜，以及Si（SB）xS（1-x）薄膜等，具体地例如形成。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005093650A Manufacturing method of sample for thin film analysis and thin film analyzing method 审中-公开
标题翻译：薄膜分析和薄膜分析方法的制备方法
公开(公告)号：JP2005093650A
公开(公告)日：2005-04-07
申请号：JP2003324202
申请日：2003-09-17
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： HOSHI TAKASHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To reduce sample manufacturing time, analysis time, and costs by reducing the number of wafers used for an analysis.
SOLUTION: A plurality of thin films 13, 15, 17 of the same kind are grown and stacked on a substrate 11 under different growing conditions. It is preferable to form boundary films 14, 16 having a different composition from those of the plurality of the thin films among the plurality of the thin films. A sample for analyzing such a thin film is destroyed and analyzed in order from an upper layer to a lower layer to obtain a relation between the growing conditions and the quality of the plurality of the thin films. Further, it is preferable to employ a secondary ion mass analysis or a Rutherford backward scattering analysis as the destruction and analysis.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过减少用于分析的晶片数量来减少样品制造时间，分析时间和成本。解决方案：在不同的生长条件下，将多个相同种类的薄膜13,15,17生长并层叠在基板11上。优选在多个薄膜中形成与多个薄膜的组成不同的边界膜14,16。用于分析这种薄膜的样品从上层到下层的顺序被破坏和分析，以获得生长条件和多个薄膜的质量之间的关系。此外，优选使用二次离子质量分析或卢瑟福后向散射分析作为破坏和分析。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005277319A Manufacturing method for semiconductor 审中-公开
标题翻译：半导体制造方法
公开(公告)号：JP2005277319A
公开(公告)日：2005-10-06
申请号：JP2004092038
申请日：2004-03-26
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： TSUTSUMI YOSHITSUGU , HOSHI TAKASHI
IPC分类号： H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a gate insulating film for a semiconductor device in which the penetration of a boron through the insulating film is suppressed and the film thickness equivalent to an oxide film thickness is reduced.
SOLUTION: The semiconductor device comprises an oxide film 10 formed on a semiconductor board 1, a high dielectric film 2 formed on the oxide film 10, and a nitrogen film 9 formed on the high dielectric film 2. According to a manufacturing method for the semiconductor device to be provided, the nitrogen film 9 is subjected to a heat treatment under a nitrogenous atmosphere after being formed.
COPYRIGHT: (C)2006,JPO&NCIPI

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