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1. 发明专利

JP2007217377A Organoboron compound and two-photon absorbing material 有权
标题翻译：有机化合物和双光子吸收材料
公开(公告)号：JP2007217377A
公开(公告)日：2007-08-30
申请号：JP2006041640
申请日：2006-02-17
申请人： Hitachi Ltd , Kyoto Institute Of Technology , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： KANBARA HIROHISA , MORI YUHEI , KURIHARA TAKASHI , NAKAJO YOSHIKI , OSADA HIRONARI , FUJITA SHIZUO , HORIGUCHI TAKAHIRO , HOTTA OSAMU , YAMAO TAKESHI , AKIYAMA SEIJI , TAKENOUCHI KUMIKO , FUJINO MASAYA
IPC分类号： C07F5/02
摘要： PROBLEM TO BE SOLVED: To obtain a solvent-soluble organoboron compound having a molecular orbital strain contributing to a two-photon absorption effect and a two-photon absorbing material. SOLUTION: The two-photon absorbing material comprises an organoboron compound containing a boron atom connected to a π conjugated hydrocarbon unit. The organoboron compound is represented by formula (1) or formula (2) (k and l are each an integer of ≥1 and ≤10,000). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：获得具有有助于双光子吸收效应的分子轨道应变和双光子吸收材料的溶剂可溶性有机硼化合物。解决方案：双光子吸收材料包含含有与π共轭烃单元连接的硼原子的有机硼化合物。有机硼化合物由式（1）或式（2）表示（k和l各自为≥1和≤10,000的整数）。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2008060480A Manufacturing method of organic semiconductor film 有权
标题翻译：有机半导体膜的制造方法
公开(公告)号：JP2008060480A
公开(公告)日：2008-03-13
申请号：JP2006238133
申请日：2006-09-01
申请人： Hitachi Ltd , Kyoto Institute Of Technology , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： HOTTA OSAMU , YAMAO TAKESHI , KAMOI AKIRA , KURIKI HIROBUMI
IPC分类号： H01L21/363 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of organic semiconductor film for readily manufacturing the organic semiconductor film having amply high orientation.
SOLUTION: In the manufacturing method of the organic semiconductor film, the organic semiconductor film is formed on the front face of a substrate 13 through vapor phase epitaxy, by using organic semiconductor compound B as the raw material. In the manufacturing method of the organic semiconductor film, the organic semiconductor compound is heated in an atmosphere, under a pressure of 10
-2 -10
6 Pa in an atmosphere, where the substrate 13 and the organic semiconductor compound B are made to adjoin to each other, with a gap N in between.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种有机半导体膜的制造方法，用于容易地制造具有高取向性的有机半导体膜。解决方案：在有机半导体膜的制造方法中，通过使用有机半导体化合物B作为原料，通过气相外延在基板13的正面上形成有机半导体膜。在有机半导体膜的制造方法中，将有机半导体化合物在大气中，在气氛中在10℃-2 -2℃〜6℃的压力下加热，其中使衬底13和有机半导体化合物B彼此相邻，间隙N在其间。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007287862A Manufacturing method of organic semiconductor film, and organic device 审中-公开
标题翻译：有机半导体膜的制造方法和有机器件
公开(公告)号：JP2007287862A
公开(公告)日：2007-11-01
申请号：JP2006112273
申请日：2006-04-14
申请人： Hitachi Ltd , Kyoto Institute Of Technology , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： HOTTA OSAMU , YAMAO TAKESHI , KAMOI AKIRA , OTA GOSHI , OHIRA TAKAYUKI , KURIKI HIROBUMI , DOI HIROKO , KURIHARA TAKASHI , MATSUURA TORU , KOSHOBU NOBUTATE , OKU YOSHIAKI
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor film for manufacturing an organic semiconductor film assuring high orientation and including a larger oriented region, and to provide an organic device having excellent performance.
SOLUTION: The manufacturing method of an organic semiconductor film can solidify the fused organic semiconductor compound A by cooling the same under the condition that the compound A is placed in contact with supporting plates 10a, 20a and is characterized as follows. (1) The supporting plate is provided with many grooves at the surface to be in contact with the organic semiconductor compound A. (2) The organic semiconductor compound A is given a temperature gradient along one direction that is almost parallel to the front surface of the supporting plate. (3) The supporting plate is formed of a polyimide material. This organic device is provided with an organic semiconductor film manufactured with the manufacturing method of the organic semiconductor film explained above.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造有机半导体膜的制造方法，该有机半导体膜确保高取向并且包括较大的取向区域，并提供具有优异性能的有机器件。解决方案：有机半导体膜的制造方法可以通过在化合物A与支撑板10a，20a接触的条件下将其冷却而使熔融的有机半导体化合物A固化，并且其特征如下。（1）支撑板在表面设置有与有机半导体化合物A接触的许多凹槽。（2）有机半导体化合物A沿着几乎平行于前表面的一个方向被赋予温度梯度支撑板。（3）支撑板由聚酰亚胺材料形成。该有机器件具有通过上述有机半导体膜的制造方法制造的有机半导体膜。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2012042899A Electrooptic waveguide and electrooptic element using the same 审中-公开
标题翻译：电光波导和电子元件使用相同
公开(公告)号：JP2012042899A
公开(公告)日：2012-03-01
申请号：JP2010186649
申请日：2010-08-23
申请人： Kyoto Institute Of Technology , Nippon Telegr & Teleph Corp , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社
发明人： KANBARA HIROHISA , KOSHOBU NOBUTAKE , KOBAYASHI JUNYA , YAMAO TAKESHI , HOTTA OSAMU
IPC分类号： G02F1/061
摘要： PROBLEM TO BE SOLVED: To provide an electrooptic waveguide that simultaneously settles difficulties in an unavoidable manufacturing process under application of a high voltage and a problem of a loss of an electrooptic effect due to orientation relaxation.SOLUTION: An electrooptic waveguide comprises: a core that has an incident end and an emission end; and a cladding that surrounds the core except for the incident and emission ends. The core is made of (thiophene/phenylene) co-oligomer having an electrooptic effect.
摘要翻译：要解决的问题：提供一种电光波导，其在施加高电压的同时降低不可避免的制造过程中的困难以及由于取向弛豫而导致的电光效应的损失的问题。电光波导包括：具有入射端和发射端的芯; 以及围绕核心的包层，除了事件和发射结束。核心由具有电光效应的（噻吩/亚苯基）共聚物制成。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011187924A Light-emitting transistor including organic laminate 有权
标题翻译：发光晶体管，包括有机层压板
公开(公告)号：JP2011187924A
公开(公告)日：2011-09-22
申请号：JP2010248628
申请日：2010-11-05
申请人： Kyoto Institute Of Technology , 国立大学法人京都工芸繊維大学
发明人： HOTTA OSAMU , YAMAO TAKESHI , TERASAKI KOHEI , OKADA TETSUSHU , KAJIWARA KENTARO
IPC分类号： H01L51/50 , H01L29/786 , H01L51/05 , H05B33/12
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting transistor including an organic semiconductor material and improved in luminous efficiency, and to provide a light-emitting device including the same.
SOLUTION: This invention provides the light-emitting transistor including a laminate where at least two kinds of organic semiconductor materials are laminated, wherein at least one of organic semiconductor material included in the laminate is a flat crystal. Luminous efficiency is improved in the transistor. When a laminate obtained by laminating a p-type organic semiconductor material and an n-type organic semiconductor material is used, the luminous efficiency is further improved. When a combination of two kinds of flat crystals is used as an organic semiconductor material included in the laminate, it is preferable in terms of luminous efficiency. When at least one of thin film-like amorphous sold substance is used as an organic semiconductor material included in the laminate, it is preferable because a film can be easily formed at a preferable part. The light-emitting device including such a light-emitting transistor is useful as well.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括有机半导体材料并且提高发光效率的发光晶体管，并提供包括该发光晶体管的发光器件。解决方案：本发明提供一种发光晶体管，其包括其中层压有至少两种有机半导体材料的层压体，其中包含在层压体中的有机半导体材料中的至少一种为平坦晶体。晶体管的发光效率提高。当使用通过层压p型有机半导体材料和n型有机半导体材料获得的层压体时，发光效率进一步提高。当使用两种平面晶体的组合作为层压体中包含的有机半导体材料时，在发光效率方面是优选的。当使用薄膜状无定形物质中的至少一种作为层叠体中所含的有机半导体材料时，优选在优选的部分容易地形成膜。包括这种发光晶体管的发光器件也是有用的。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010024191A (thiophene/phenylene) cooligomer, method for producing the same, and organic semiconductor material and light-emitting material containing the same 审中-公开
标题翻译：（噻吩/苯乙烯）共聚物，其制造方法和有机半导体材料及其发光材料
公开(公告)号：JP2010024191A
公开(公告)日：2010-02-04
申请号：JP2008188486
申请日：2008-07-22
申请人： Kyoto Institute Of Technology , Sumitomo Seika Chem Co Ltd , 住友精化株式会社 , 国立大学法人京都工芸繊維大学
发明人： BANDO SEIJI , KATAGIRI TOSHIFUMI , MIYATA MASAYOSHI , SUZUKI MICHIO , HOTTA OSAMU , YAMAO TAKESHI
IPC分类号： C07D333/18 , C07B61/00 , C09K11/06
摘要： PROBLEM TO BE SOLVED: To provide a (thiophene/phenylene) cooligomer having a relatively low melting point and excellent solubility in various kinds of solvents, to provide an organic semiconductor material and a light-emitting material containing the (thiophene/phenylene) cooligomer, and to provide a method for producing the (thiophene/phenylene) cooligomer. SOLUTION: The (thiophene/phenylene) cooligomer is represented by formula (1) [wherein, R 1 to R 5 are, each independently, H, F, a 1-16C alkyl group, a 1-6C alkoxy group or a 1-6C perfluoroalkyl group; A is H, phenyl group or a 1-16C alkyl group; (m) is an integer of 1 to 3; R 6 to R 9 are, each independently, H or a 1-16C alkyl group; mR 6 s may be identical or different each other; mR 7 s may be identical or different each other; at least one of mR 6 s, mR 7 s, R 8 , R 9 and A is a 1-16C alkyl group]. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有相对低的熔点和在各种溶剂中的溶解性优异的（噻吩/亚苯基）共聚物，提供含有（噻吩/亚苯基）的有机半导体材料和发光材料）共聚物，并提供（噻吩/亚苯基）共聚物的制备方法。解决方案：（噻吩/亚苯基）共聚物由式（1）表示[其中，R 1至R 5各自独立地为H，F， 1-16C烷基，1-6C烷氧基或1-6C全氟烷基; A是H，苯基或1-16C烷基; （m）为1〜3的整数。 R 6 至R 9 各自独立地为H或1-16C烷基; mR <6>可以相同或不同; mR 7可以相同或不同; mR 6 s，m R SP SP 3，R SP SP 8，SP SP 9，SP 3中的至少一个是A 1 -16C烷基]。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009155318A (thiophene/phenylene) cooligomer, production method thereof and organic semiconductor material and luminescent material containing the cooligomer 有权
标题翻译：（THIOPHENE / PHENYLENE）COOLIGOMER，其生产方法和有机半导体材料和含有COOLIGOMER的发光材料
公开(公告)号：JP2009155318A
公开(公告)日：2009-07-16
申请号：JP2008278300
申请日：2008-10-29
申请人： Kyoto Institute Of Technology , Sumitomo Seika Chem Co Ltd , 住友精化株式会社 , 国立大学法人京都工芸繊維大学
发明人： BANDO SEIJI , KATAGIRI TOSHIFUMI , MIYATA MASAYOSHI , SUZUKI MICHIO , HOTTA OSAMU , YAMAO TAKESHI
IPC分类号： C07D333/18 , B01J31/24 , C09K11/06 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a (thiophene/phenylene) cooligomer having a comparatively low melting point and excellent in solubility to various solvents, to provide organic semiconductor materials and luminescent materials comprising the (thiophene/phenylene) cooligomer, and to provide a production method of the (thiophene/phenylene) cooligomer. SOLUTION: The (thiophene/phenylene) cooligomer is represented by formula (1) (wherein, R 1 -R 5 are each independently H, F, a 1C-16C alkyl group, a 1C-6C alkoxy group or a 1C-6C perfluoroalkyl group, and at least one substituent is F, a 1C-16C alkyl group, a 1-6C alkoxy group or a 1C-6C perfluoroalkyl group; A is H or thienyl group; m represents an integer of 1-3; and when m is 1, A is thienyl group). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有比较低的熔点和对各种溶剂的溶解性优异的（噻吩/亚苯基）共聚物，提供有机半导体材料和包含（噻吩/亚苯基）共聚物的发光材料，以及提供（噻吩/亚苯基）共聚物的制备方法。解决方案：（噻吩/亚苯基）共聚物由式（1）表示（其中，R 1和R 2各自独立地为H，F，1C -16C烷基，1C-6C烷氧基或1C-6C全氟烷基，至少一个取代基是F，1C-16C烷基，1-6C烷氧基或1C-6C全氟烷基; A是 H或噻吩基; m表示1-3的整数;当m为1时，A为噻吩基）。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009114074A (thiophene/phenylene) co-oligomer 审中-公开
标题翻译：（THIOPHENE / PHENYLENE）CO-OLIGOMER
公开(公告)号：JP2009114074A
公开(公告)日：2009-05-28
申请号：JP2007285196
申请日：2007-11-01
申请人： Kyoto Institute Of Technology , Sumitomo Seika Chem Co Ltd , 住友精化株式会社 , 国立大学法人京都工芸繊維大学
发明人： BANDO SEIJI , KATAGIRI TOSHIFUMI , MIYATA MASAYOSHI , SUZUKI MICHIO , KITAYAMA HIROYUKI , HOTTA OSAMU , YAMAO TAKESHI
IPC分类号： C07D333/06 , C09K11/06 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a (thiophene/phenylene) co-oligomer having a relatively low melting point and excellent in solubility with various kinds of solvents. SOLUTION: This (thiophene/phenylene) co-oligomer expressed by formula (1) [wherein, R 1 to R 5 and R 6 to R 10 are each independently H, F, a 1-12C alkyl, a 1-6C alkoxy or a 1-6C perfluoroalkyl; (n) is an integer of 3 to 12; R 11 , R 12 are each independently H or a 1-12C alkyl, nR 11 are each the same or different, nR 12 are each the same or different, and provided that at least one of the nR 11 and nR 12 bonded with the thiophene ring is a 1-12C alkyl] and having an asymmetric structure in terms of right and left is provided. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供具有相对低熔点并且与各种溶剂的溶解性优异的（噻吩/亚苯基）共聚物。解决方案：由式（1）表示的（噻吩/亚苯基）共聚物低聚物[其中R 1和R 2彼此独立地表示， SP“至R”SP“10各自独立地为H，F，1-12C烷基，1-6C烷氧基或1-6C全氟烷基; （n）为3〜12的整数， R SP 12各自独立地是H或1-12C烷基，n R 11和R 11各自相同或不同，n R 12 各自相同或不同，并且条件是与噻吩环键合的nR 11 和nR 12 中的至少一个是1-12C烷基 ]并具有左右方向的不对称结构。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2010053045A (thiophene/phenylene) cooligomer, method for producing the same, and organic semiconductor material and light-emitting material containing the same 有权
标题翻译：（噻吩/苯乙烯）共聚物，其制造方法和有机半导体材料及其发光材料
公开(公告)号：JP2010053045A
公开(公告)日：2010-03-11
申请号：JP2008216781
申请日：2008-08-26
申请人： Kyoto Institute Of Technology , Sumitomo Seika Chem Co Ltd , 住友精化株式会社 , 国立大学法人京都工芸繊維大学
发明人： KATAGIRI TOSHIFUMI , BANDO SEIJI , MIYATA MASAYOSHI , SUZUKI MICHIO , HOTTA OSAMU , YAMAO TAKESHI
IPC分类号： C07D333/18 , C09K11/06 , H01L51/05 , H01L51/30 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a (thiophene/phenylene) cooligomer excellent in a light-emitting performance, to provide an organic semiconductor material and a light-emitting material containing the (thiophene/phenylene) cooligomer, and to provide a method for producing the (thiophene/phenylene) cooligomer. SOLUTION: There is provided the (thiophene/phenylene) cooligomer represented by formula (1), wherein, Ar is phenylene, or thienylene; (n) is an integer of 1 to 5; nAr groups may be each identical or different, provided that at least one of the nAr groups is thienylene. COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2008007377A Method and apparatus for producing single crystal thin film of material 有权
标题翻译：用于生产单层晶体薄膜的方法和装置
公开(公告)号：JP2008007377A
公开(公告)日：2008-01-17
申请号：JP2006179593
申请日：2006-06-29
申请人： Kyoto Institute Of Technology , 国立大学法人京都工芸繊維大学
发明人： YAMAO TAKESHI , HOTTA OSAMU , OTA GOSHI , MIKI TOMOHARU
IPC分类号： C30B29/54 , C07D333/10 , C07D333/16 , C07D333/18 , C07D333/24
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal thin film of a material, especially an organic semiconductor material, for solving such a problem that a conventional method and apparatus can use only material having thermal stability and not decomposed nor deteriorated even if it is exposed to a high temperature condition for a long period of time and the method and apparatus requires strict control of the temperature of the saturated solution of the material so as not to lower.
SOLUTION: The method for producing the single crystal thin film of a material includes the steps of: (1) preparing a mixture 60 containing a solid 70 which remains without being dissolved in a solvent at a first temperature; (2) dipping at least a portion of a heat-conductive member 10 into the mixture 60; (3) keeping the mixture 60 at a first temperature; and (4) keeping at least a portion of a part, not dipped into the mixture 60, of the heat-conductive member 10 at a second temperature. By this method, the single crystal thin film of the material is formed at least on a part of the dipped heat-conductive member 10 from the mixture 60.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供一种材料，特别是有机半导体材料的单晶薄膜的制造方法和装置，用于解决常规方法和装置只能使用具有热稳定性的材料的问题即使长期暴露于高温条件下也不会分解也不劣化，该方法和装置需要严格控制材料的饱和溶液的温度以不降低。解决方案：用于制造材料的单晶薄膜的方法包括以下步骤：（1）制备含有固体70的混合物60，固体70在第一温度下不溶于溶剂; （2）将至少一部分导热构件10浸入混合物60中; （3）将混合物60保持在第一温度; 和（4）在第二温度下保持导热构件10的至少一部分未被浸入到混合物60中的部分。通过该方法，从混合物60至少在浸渍导热部件10的一部分上形成材料的单晶薄膜。版权所有（C）2008，JPO＆INPIT

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