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1. 发明专利

JP2007287862A Manufacturing method of organic semiconductor film, and organic device 审中-公开
标题翻译：有机半导体膜的制造方法和有机器件
公开(公告)号：JP2007287862A
公开(公告)日：2007-11-01
申请号：JP2006112273
申请日：2006-04-14
申请人： Hitachi Ltd , Kyoto Institute Of Technology , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： HOTTA OSAMU , YAMAO TAKESHI , KAMOI AKIRA , OTA GOSHI , OHIRA TAKAYUKI , KURIKI HIROBUMI , DOI HIROKO , KURIHARA TAKASHI , MATSUURA TORU , KOSHOBU NOBUTATE , OKU YOSHIAKI
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor film for manufacturing an organic semiconductor film assuring high orientation and including a larger oriented region, and to provide an organic device having excellent performance.
SOLUTION: The manufacturing method of an organic semiconductor film can solidify the fused organic semiconductor compound A by cooling the same under the condition that the compound A is placed in contact with supporting plates 10a, 20a and is characterized as follows. (1) The supporting plate is provided with many grooves at the surface to be in contact with the organic semiconductor compound A. (2) The organic semiconductor compound A is given a temperature gradient along one direction that is almost parallel to the front surface of the supporting plate. (3) The supporting plate is formed of a polyimide material. This organic device is provided with an organic semiconductor film manufactured with the manufacturing method of the organic semiconductor film explained above.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造有机半导体膜的制造方法，该有机半导体膜确保高取向并且包括较大的取向区域，并提供具有优异性能的有机器件。解决方案：有机半导体膜的制造方法可以通过在化合物A与支撑板10a，20a接触的条件下将其冷却而使熔融的有机半导体化合物A固化，并且其特征如下。（1）支撑板在表面设置有与有机半导体化合物A接触的许多凹槽。（2）有机半导体化合物A沿着几乎平行于前表面的一个方向被赋予温度梯度支撑板。（3）支撑板由聚酰亚胺材料形成。该有机器件具有通过上述有机半导体膜的制造方法制造的有机半导体膜。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008251872A Composite type organic light-emitting transistor element and manufacturing method therefor 审中-公开
标题翻译：复合型有机发光晶体管元件及其制造方法
公开(公告)号：JP2008251872A
公开(公告)日：2008-10-16
申请号：JP2007091899
申请日：2007-03-30
申请人： Hitachi Ltd , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： SHIMOJI NORIYUKI , OKUYAMA MASARU , OKU YOSHIAKI
IPC分类号： H01L51/50 , H01L27/28 , H01L29/786 , H01L51/05 , H05B33/10 , H05B33/26
CPC分类号： H01L27/3274 , H01L27/3248 , H01L51/0055 , H01L51/006 , H01L51/0081 , H01L51/0541
摘要： PROBLEM TO BE SOLVED: To provide a composite type organic light-emitting transistor, along with a method for easily manufacturing the same, of which the pixel size is reduced and numerical aperture is improved.
SOLUTION: The composite type organic light-emitting transistor element comprises at least one organic light-emitting diode element and at least one organic thin-film transistor element, arranged on the same substrate. The organic light-emitting diode element comprises a first organic layer, arranged in between a positive electrode and a negative electrode. The organic thin-film transistor element comprises a second organic layer arranged on the source electrode and the drain electrode. The first organics layer is separated from the second organic layer in terms of space. The organic material constituting the second organics layer is identical with that constituting the first organic layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种复合型有机发光晶体管及其制造方法，其中像素尺寸减小，数值孔径得到改善。解决方案：复合型有机发光晶体管元件包括至少一个有机发光二极管元件和至少一个有机薄膜晶体管元件，其布置在同一基板上。有机发光二极管元件包括布置在正极和负极之间的第一有机层。有机薄膜晶体管元件包括布置在源电极和漏电极上的第二有机层。在空间方面，第一有机层与第二有机层分离。构成第二有机层的有机材料与构成第一有机层的有机材料相同。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008085200A Manufacturing method of organic material equipment 有权
标题翻译：有机材料设备制造方法
公开(公告)号：JP2008085200A
公开(公告)日：2008-04-10
申请号：JP2006265538
申请日：2006-09-28
申请人： Hitachi Ltd , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： SUGANUMA NAOTOSHI , SHIMOJI NORIYUKI , OKU YOSHIAKI
IPC分类号： H01L21/336 , H01L21/28 , H01L21/306 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/40 , H01L51/50
CPC分类号： H01L51/0018 , H01L51/0016
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic material apparatus capable of forming a fine pattern of another material layer on a substrate while restricting or preventing an influence to an organic material layer on the substrate.
SOLUTION: The organic semiconductor device comprises: a gate electrode 2; a gate insulating film 3; an organic material layer 4; and electrodes 5, 6. Upon manufacture, a sacrifice layer 8 is formed on the organic material layer 4, and a photoresist 9 is formed on the sacrifice layer 8. Thereafter, it is exposed to light through a predetermined pattern, and the photoresist 9 at an exposed portion is dissolved by an alkali development solution. Then, the entire surface is exposed and, after the electrodes 5, 6 are formed, an unnecessary portion of the electrodes 5, 6 is lifted off by the alkali developing solution together with the photoresist 9 to hereby pattern the electrodes 5, 6.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够在限制或防止对基板上的有机材料层的影响的同时在基板上形成另一材料层的精细图案的有机材料装置的制造方法。解决方案：有机半导体器件包括：栅电极2; 栅极绝缘膜3; 有机材料层4; 制作时，在有机材料层4上形成牺牲层8，在牺牲层8上形成光致抗蚀剂9，然后通过规定的图案曝光，光刻胶9 在曝光部分被碱显影液溶解。然后，整个表面被暴露，并且在形成电极5,6之后，电极5,6的不需要的部分与光致抗蚀剂9一起被碱性显影液提起，从而使电极5,6形成图案。 P>版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008024778A Fiber composite material and method for producing the same 有权
标题翻译：纤维复合材料及其制造方法
公开(公告)号：JP2008024778A
公开(公告)日：2008-02-07
申请号：JP2006196935
申请日：2006-07-19
申请人： Hitachi Ltd , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： YANO HIROYUKI , ATAGI MASAYA , ABE KENTARO , IFUKU SHINSUKE , SHIMOJI NORIYUKI , OKU YOSHIAKI , OKUYAMA MASARU
IPC分类号： C08J5/04 , D06M10/02 , D06M11/77 , D06M15/263
CPC分类号： D21H21/26 , Y10T428/26 , Y10T428/269 , Y10T442/20 , Y10T442/614
摘要： PROBLEM TO BE SOLVED: To provide a highly transparent fiber composite material produced by a simplified production process by reducing the used amounts of raw materials, maintaining the excellent functions of a fiber material, and having high flexibility and low thermal expansion. SOLUTION: The fiber composite material comprises a fiber assembly having 4-200 nm average fiber diameter and ≥3% visual light transmittance at 50 μm thickness, and a coat layer coating the surface of the fiber assembly and smoothening the surface, and has ≥60% visual light transmittance at 50 μm thickness. The highly transparent fiber composite material can be obtained by coating the surface with the coat layer to smoothen the surface and to suppress the scattering of the light caused by the uneven shape of the surface in such the fiber assembly. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过简化生产工艺生产的高透明纤维复合材料，通过减少原料的使用量，保持纤维材料的优异功能，并且具有高柔性和低热膨胀。解决方案：纤维复合材料包括具有4-200nm平均纤维直径和50μm厚度下≥3％视觉透光率的纤维组件，以及涂覆纤维组件表面并使表面平滑的涂层，在50μm厚度下具有≥60％的视觉透光率。高透明性的纤维复合材料可以通过用涂层涂覆表面来使表面光滑化，并且抑制由于这种纤维组合体中表面的不均匀形状引起的光的散射。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2010122090A Ion image sensor and damage measuring device 审中-公开
标题翻译：离子图像传感器和损伤测量装置
公开(公告)号：JP2010122090A
公开(公告)日：2010-06-03
申请号：JP2008296444
申请日：2008-11-20
申请人： Rohm Co Ltd , ローム株式会社
发明人： NAKAHARA TAKESHI , NIWA DAISUKE , OKU YOSHIAKI
IPC分类号： G01N27/414 , G01N27/00 , G01N27/416 , G01N33/50
摘要： PROBLEM TO BE SOLVED: To provide an ion image sensor and a damage measuring device capable of visualizing the degree of a damage of hairs or a skin as a two-dimensional image.
SOLUTION: This ion image sensor for detecting an ion concentration includes a sensing part arrayed two-dimensionally, to be in contact with a skin including hairs or a head skin through liquid, and outputs the ion concentration detected by the sensing part as two-dimensional data. As the ion concentration, a hydrogen ion concentration, a calcium ion concentration or the like is enumerated.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够将头发或皮肤的损伤程度可视化为二维图像的离子图像传感器和损伤测量装置。解决方案：用于检测离子浓度的离子图像传感器包括二维排列的感测部件，其通过液体与包含毛发或头皮的皮肤接触，并将由感测部检测出的离子浓度输出为二维数据。作为离子浓度，列举氢离子浓度，钙离子浓度等。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2006073800A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006073800A
公开(公告)日：2006-03-16
申请号：JP2004255463
申请日：2004-09-02
申请人： Mitsui Chemicals Inc , Rohm Co Ltd , Ulvac Japan Ltd , ローム株式会社 , 三井化学株式会社 , 株式会社アルバック
发明人： OKU YOSHIAKI , FUJII YOSHITOSHI , TAKAMURA KAZUO
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/7682 , H01L21/76802 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2221/1047
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device (comprising an interlayer insulating film) having a sufficiently low dielectric constant and high mechanical strength. SOLUTION: This method for manufacturing a semiconductor device comprises a step for forming a dielectric thin film formed with a large number of voids around a skeleton principally composed of Si-O bond on the surface of a semiconductor substrate on which a desired element region is formed, a step for patterning the surface of the dielectric thin film, and a step for touching gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules to the surface of the patterned dielectric thin film. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有足够低介电常数和高机械强度的半导体器件（包括层间绝缘膜）。解决方案：用于制造半导体器件的方法包括用于形成在半导体衬底的表面上主要由Si-O键构成的骨架周围形成有大量空隙的电介质薄膜的步骤，其中所需的元素形成电介质薄膜的表面的步骤，以及将含有至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））分子的气体接触到图案化电介质的表面的步骤薄膜。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2003017487A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003017487A
公开(公告)日：2003-01-17
申请号：JP2001198990
申请日：2001-06-29
申请人： Rohm Co Ltd , ローム株式会社
发明人： NISHIYAMA NORIKAZU , KAMIYAMA KOREICHI , OKU YOSHIAKI
IPC分类号： H01L23/522 , H01L21/316 , H01L21/768 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength, and to provide a semiconductor device capable of reducing both of a capacity between wiring layers and a capacity between wires, even if in refining and high integration of the semiconductor device.
SOLUTION: The semiconductor comprises the inorganic insulation film of porus structure formed on the surface of a substrate and comprising at least on supporting a single support body in an air hole inside.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供低介电常数和高机械强度的绝缘膜，并且提供能够降低布线层之间的容量和电线之间的容量的半导体器件，即使在精炼和高集成度半导体器件。解决方案：半导体包括形成在基板表面上的孔结构的无机绝缘膜，并且至少包括在内部的空气孔中支撑单个支撑体。

8. 发明专利

JP2007073914A Porous thin film, manufacturing method therefor, and semiconductor device using it 有权
标题翻译：多孔薄膜，其制造方法和使用其的半导体器件
公开(公告)号：JP2007073914A
公开(公告)日：2007-03-22
申请号：JP2005262598
申请日：2005-09-09
申请人： Asm Japan Kk , Rohm Co Ltd , ローム株式会社 , 日本エー・エス・エム株式会社
发明人： OKU YOSHIAKI , NAKANO AKINORI
IPC分类号： H01L21/316 , C23C14/34 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a low dielectric constant thin film which is easily formed at a high speed.
SOLUTION: This method comprises steps of: supplying a hole generating material and a framework generating material to the surface of a substrate by vapor phase; forming a thin film wherein the framework generated by the framework generating material is so demarcated as to enclose the hole generating material on the substrate surface; and forming holes by removing the hole generating material from the thin film to form a porous thin film which is so formed that the framework encloses the holes.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供容易高速形成的低介电常数薄膜。解决方案：该方法包括以下步骤：通过气相将孔产生材料和骨架产生材料供应到衬底的表面; 形成薄膜，其中由所述框架产生材料产生的框架如此划定为将所述孔产生材料包围在所述基底表面上; 以及通过从薄膜中除去孔产生材料形成孔，以形成多孔薄膜，该多孔薄膜被形成为使框架包围孔。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2003017483A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003017483A
公开(公告)日：2003-01-17
申请号：JP2001198943
申请日：2001-06-29
申请人： Rohm Co Ltd , ローム株式会社
发明人： NISHIYAMA NORIKAZU , KAMIYAMA KOREICHI , OKU YOSHIAKI
IPC分类号： H01L21/768 , H01L21/316 , H01L21/8246 , H01L23/522 , H01L27/105
CPC分类号： C23C18/1225 , C23C18/1208 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength. SOLUTION: This semiconductor device is provided with the insulation film, provided with a porus structure formed on the surface of a substrate and consisting of the holes of three-dimensional network structure.
摘要翻译：要解决的问题：提供低介电常数和高机械强度的绝缘膜。解决方案：该半导体器件设置有绝缘膜，其具有形成在基板表面上并由三维网络结构的孔组成的孔结构。

10. 发明专利

JP2009049204A Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：JP2009049204A
公开(公告)日：2009-03-05
申请号：JP2007214078
申请日：2007-08-20
申请人： Rohm Co Ltd , ローム株式会社
发明人： OKUYAMA MASARU , OKU YOSHIAKI , SHIMOJI NORIYUKI
IPC分类号： H01L29/786 , H01L51/05
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0037 , H01L51/0053 , H01L51/0541 , H01L51/0554 , H01L51/0562
摘要： PROBLEM TO BE SOLVED: To provide an organic thin film transistor which is protected against oxygen and water, electromagnetically protected, stabilized in characteristics, and suitable for integration. SOLUTION: The organic thin film transistor has a substrate 10, a gate electrode 12 disposed on the substrate 10, a gate insulating film 14 disposed on the gate electrode 12, a source electrode 16 and a drain electrode 18 disposed on the gate insulating film 14, an organic semiconductor layer 20 disposed on the gate insulating film 14 between the source electrode 16 and drain electrode 18, a hole transport layer 22 disposed on the organic semiconductor layer 20, an electron transport layer 24 disposed on the hole transport layer 22, and a conductor layer 26 disposed on the electron transport layer 24. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种有机薄膜晶体管，其被防止氧和水，电磁保护，特性稳定并且适合于集成。解决方案：有机薄膜晶体管具有基板10，设置在基板10上的栅极12，设置在栅电极12上的栅极绝缘膜14，设置在栅极上的源电极16和漏电极18 绝缘膜14，设置在源电极16和漏电极18之间的栅极绝缘膜14上的有机半导体层20，设置在有机半导体层20上的空穴传输层22，设置在空穴传输层上的电子传输层24 22，以及布置在电子传输层24上的导体层26.版权所有（C）2009，JPO＆INPIT

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