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1. 发明专利

JP2007287862A Manufacturing method of organic semiconductor film, and organic device 审中-公开
标题翻译：有机半导体膜的制造方法和有机器件
公开(公告)号：JP2007287862A
公开(公告)日：2007-11-01
申请号：JP2006112273
申请日：2006-04-14
申请人： Hitachi Ltd , Kyoto Institute Of Technology , Kyoto Univ , Mitsubishi Chemicals Corp , Nippon Telegr & Teleph Corp , Pioneer Electronic Corp , Rohm Co Ltd , パイオニア株式会社 , ローム株式会社 , 三菱化学株式会社 , 国立大学法人京都大学 , 国立大学法人京都工芸繊維大学 , 日本電信電話株式会社 , 株式会社日立製作所
发明人： HOTTA OSAMU , YAMAO TAKESHI , KAMOI AKIRA , OTA GOSHI , OHIRA TAKAYUKI , KURIKI HIROBUMI , DOI HIROKO , KURIHARA TAKASHI , MATSUURA TORU , KOSHOBU NOBUTATE , OKU YOSHIAKI
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor film for manufacturing an organic semiconductor film assuring high orientation and including a larger oriented region, and to provide an organic device having excellent performance.
SOLUTION: The manufacturing method of an organic semiconductor film can solidify the fused organic semiconductor compound A by cooling the same under the condition that the compound A is placed in contact with supporting plates 10a, 20a and is characterized as follows. (1) The supporting plate is provided with many grooves at the surface to be in contact with the organic semiconductor compound A. (2) The organic semiconductor compound A is given a temperature gradient along one direction that is almost parallel to the front surface of the supporting plate. (3) The supporting plate is formed of a polyimide material. This organic device is provided with an organic semiconductor film manufactured with the manufacturing method of the organic semiconductor film explained above.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造有机半导体膜的制造方法，该有机半导体膜确保高取向并且包括较大的取向区域，并提供具有优异性能的有机器件。解决方案：有机半导体膜的制造方法可以通过在化合物A与支撑板10a，20a接触的条件下将其冷却而使熔融的有机半导体化合物A固化，并且其特征如下。（1）支撑板在表面设置有与有机半导体化合物A接触的许多凹槽。（2）有机半导体化合物A沿着几乎平行于前表面的一个方向被赋予温度梯度支撑板。（3）支撑板由聚酰亚胺材料形成。该有机器件具有通过上述有机半导体膜的制造方法制造的有机半导体膜。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008007377A Method and apparatus for producing single crystal thin film of material 有权
标题翻译：用于生产单层晶体薄膜的方法和装置
公开(公告)号：JP2008007377A
公开(公告)日：2008-01-17
申请号：JP2006179593
申请日：2006-06-29
申请人： Kyoto Institute Of Technology , 国立大学法人京都工芸繊維大学
发明人： YAMAO TAKESHI , HOTTA OSAMU , OTA GOSHI , MIKI TOMOHARU
IPC分类号： C30B29/54 , C07D333/10 , C07D333/16 , C07D333/18 , C07D333/24
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal thin film of a material, especially an organic semiconductor material, for solving such a problem that a conventional method and apparatus can use only material having thermal stability and not decomposed nor deteriorated even if it is exposed to a high temperature condition for a long period of time and the method and apparatus requires strict control of the temperature of the saturated solution of the material so as not to lower.
SOLUTION: The method for producing the single crystal thin film of a material includes the steps of: (1) preparing a mixture 60 containing a solid 70 which remains without being dissolved in a solvent at a first temperature; (2) dipping at least a portion of a heat-conductive member 10 into the mixture 60; (3) keeping the mixture 60 at a first temperature; and (4) keeping at least a portion of a part, not dipped into the mixture 60, of the heat-conductive member 10 at a second temperature. By this method, the single crystal thin film of the material is formed at least on a part of the dipped heat-conductive member 10 from the mixture 60.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提供一种材料，特别是有机半导体材料的单晶薄膜的制造方法和装置，用于解决常规方法和装置只能使用具有热稳定性的材料的问题即使长期暴露于高温条件下也不会分解也不劣化，该方法和装置需要严格控制材料的饱和溶液的温度以不降低。解决方案：用于制造材料的单晶薄膜的方法包括以下步骤：（1）制备含有固体70的混合物60，固体70在第一温度下不溶于溶剂; （2）将至少一部分导热构件10浸入混合物60中; （3）将混合物60保持在第一温度; 和（4）在第二温度下保持导热构件10的至少一部分未被浸入到混合物60中的部分。通过该方法，从混合物60至少在浸渍导热部件10的一部分上形成材料的单晶薄膜。版权所有（C）2008，JPO＆INPIT

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