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    • 2. 发明专利
    • Production method of slag for sub-base
    • 用于子基的SLAG的生产方法
    • JP2014159617A
    • 2014-09-04
    • JP2013030979
    • 2013-02-20
    • Kobe Steel Ltd株式会社神戸製鋼所
    • KOBAYASHI YOSHIHIROSUZUKI RYOHEI
    • C21C1/02C04B5/06
    • Y02P10/212
    • PROBLEM TO BE SOLVED: To reliably suppress a Pb elution amount from slag in which Pb is included by high concentration within an earth environmental quality standard without the steep rise of production cost in slag for sub-base.SOLUTION: In a production method of slag for sub-base, when slag removed in a preliminary treatment step performed before decarbonization treatment is recycled as the slag for sub-base, dust 10 including Fe component and Pb component is input in the preliminary treatment step, blowing is performed depending on a refining condition satisfying a prescribed relation derived from a Pb input amount, a molten iron temperature, a blowing time, an oxygen concentration in a furnace, and a slag amount, and Pb is made harmless, thereby the slag removed after the blowing is recycled as the slag for sub-base.
    • 要解决的问题:为了在地下环境质量标准中可靠地抑制高浓度含铅的炉渣中的Pb洗脱量,而不会使底层炉渣的生产成本急剧上升。解决方案:在炉渣的生产方法中 对于底座,当在脱碳处理之前进行的预处理步骤中除去的炉渣作为副炉渣再循环时,在预处理步骤中输入包括Fe成分和Pb成分的粉尘10,根据精炼 条件满足从Pb输入量,铁水温度,吹炼时间,炉中的氧浓度和渣量导出的规定关系,并且使Pb变得无害,从而将吹入后的渣除去作为 子底渣。
    • 4. 发明专利
    • Aluminum alloy clad material for a heat exchanger
    • 用于热交换器的铝合金材料
    • JP2014031588A
    • 2014-02-20
    • JP2013225366
    • 2013-10-30
    • Kobe Steel Ltd株式会社神戸製鋼所
    • KOBAYASHI YOSHIHIROSAKASHITA SHINJIUEDA TOSHIKI
    • C22C21/00B23K35/22B23K35/28C22F1/00C22F1/053
    • PROBLEM TO BE SOLVED: To provide an aluminum alloy clad material for a heat exchanger having an excellent solderability and excellent in terms of pitting corrosion resistance.SOLUTION: In an aluminum alloy clad material 1a for a heat exchanger comprising a core material 2, a sacrificial material 3 formed on one surface of the core material 2, and a solder material 4 consisting of an Al-Si alloy formed on the other surface of the core material 2, the core material 2 includes specified contents of Si, Mn, Cu, and Ti and has the balance comprising Al and inevitable impurities, whereas the sacrificial material 3 includes specified contents of Zn, Cr, Si, and Mn and has the balance comprising Al and inevitable impurities, whereas the respective maximal sizes, number densities, and area ratios of Al-Mn, Al-Mn-Si, and Al-Cu intermetallic compounds deposited on the sacrificial material 3 after a 3 min soldering thermal treatment at 595°C are peculiarly regulated.
    • 要解决的问题:提供一种具有优异的可焊性和耐点腐蚀性优异的用于热交换器的铝合金包覆材料。解决方案:在用于包括芯材2的热交换器的铝合金包覆材料1a中,牺牲 形成在芯材2的一个表面上的材料3和形成在芯材2的另一个表面上的由Al-Si合金组成的焊料材料4,芯材2包括特定含量的Si,Mn,Cu和 Ti,余量包含Al和不可避免的杂质,而牺牲材料3包括Zn,Cr,Si和Mn的特定含量,余量包含Al和不可避免的杂质,而各自的最大尺寸,数量密度和面积比 特别调节了在595℃下3分钟焊接热处理后沉积在牺牲材料3上的Al-Mn,Al-Mn-Si和Al-Cu金属间化合物。
    • 5. 发明专利
    • Thin film transistor substrate with superior resistance to ito pinhole corrosion
    • 薄膜晶体管衬底,具有超导电阻ITO引线腐蚀
    • JP2011216782A
    • 2011-10-27
    • JP2010085425
    • 2010-04-01
    • Kobe Steel Ltd株式会社神戸製鋼所
    • KOBAYASHI YOSHIHIRONAGAO MAMORU
    • H01L29/786G02F1/1368H01L21/28H01L21/3205H01L23/52
    • PROBLEM TO BE SOLVED: To provide a thin film transistor substrate having a structure such that a thin film transistor has a transparent conductive film and an Al alloy film connected directly to each other, the thin film transistor being prevented from having pinhole corrosion without providing processes for application and peeling of paint for corrosion prevention for a manufacturing process thereof.SOLUTION: The present invention relates to the thin film transistor substrate having the structure such that the thin film transistor has the transparent conductive film and Al alloy film connected directly to each other, wherein the Al alloy film contains 0.1 to 5 atom% Ge, and has a laminate structure comprising a first layer containing Ge three or more times as much as that of the Al alloy film, and a second layer made of Al alloy having a lower Ge content than the first layer.
    • 要解决的问题:为了提供具有使薄膜晶体管具有彼此直接连接的透明导电膜和Al合金膜的结构的薄膜晶体管基板,可以防止薄膜晶体管在没有提供工艺的情况下具有针孔腐蚀 用于其制造工艺中用于防腐蚀涂料的涂布和剥离。本发明涉及具有薄膜晶体管的薄膜晶体管基板,其薄膜晶体管具有彼此直接连接的透明导电膜和Al合金膜 其中,所述Al合金膜含有0.1〜5原子%的Ge,并且具有层叠结构,所述叠层结构包含含有Ge的比率为所述Al合金膜的三倍以上的第一层,以及由Al合金制成的第二层, Ge含量比第一层。
    • 6. 发明专利
    • Aluminum alloy cladding material
    • 铝合金材料
    • JP2010202919A
    • 2010-09-16
    • JP2009048277
    • 2009-03-02
    • Kobe Steel Ltd株式会社神戸製鋼所
    • SAKASHITA SHINJIKOBAYASHI YOSHIHIRO
    • C22C21/00B23K35/28C22F1/00C22F1/04F28F21/08
    • PROBLEM TO BE SOLVED: To provide an aluminum alloy cladding material for a heat exchanger which maintains high corrosion resistance and high strength, particularly exhibits excellent inside corrosion resistance as that of an automotive brazing type radiator tube material, even when being made thin in thickness. SOLUTION: In the aluminum alloy cladding material provided with: a core material; a sacrificial anode material clad on one side of the core material; and a brazing filler metal clad on the other side of the core material, the core material comprises, by mass, 0.2 to 2.0% Si, 0.2 to 2.0% Mn and 0.3 to 2.0% Cu, and the balance Al with inevitable impurities, the sacrificial anode material comprises, by mass, 1.0 to 12% Zn, and further comprises one or more selected from 0.01 to 5.0% Mo and 0.01 to 5.0% W, and the balance Al with inevitable impurities, and the brazing filler metal comprises 6 to 15 mass% Si, and the balance Al with inevitable impurities. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供一种保持高耐腐蚀性和高强度的热交换器的铝合金包覆材料,特别是表现出与汽车钎焊型散热器管材料相比优异的内部耐腐蚀性,即使在制成薄 厚度。 解决方案:在具有芯材的铝合金覆层材料中, 包覆在芯材一侧的牺牲阳极材料; 以及包覆在芯材的另一侧的钎料填充材料,芯材以质量计含有Si:0.2〜2.0%,Mn:0.2〜2.0%,Cu:0.3〜2.0%,余量为Al,不可避免的杂质为 牺牲阳极材料以质量计含有1.0〜12%的Zn,还含有选自0.01〜5.0%Mo和0.01〜5.0%W的一种或多种,​​剩余部分Al含有不可避免的杂质,钎焊料包含6〜 15质量%Si,余量为Al与不可避免的杂质。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Al-ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND Al-ALLOY SPUTTERING TARGET
    • 用于显示装置的合金膜,显示装置和铝合金喷射目标
    • JP2010165865A
    • 2010-07-29
    • JP2009006959
    • 2009-01-15
    • Kobe Steel Ltd株式会社神戸製鋼所
    • KOBAYASHI YOSHIHIRONAGAO MAMORUTAKAGI TOSHIAKIMIKI AYA
    • H01L21/3205C23C14/14C23C14/34H01L21/285H01L23/52H01L29/786
    • PROBLEM TO BE SOLVED: To provide an Al-alloy film for a display device in which contact resistance with a transparent pixel electrode directly connected with the Al-alloy film is sufficiently reduced and corrosion resistance and heat resistance are improved. SOLUTION: The Al-alloy film is directly connected with a transparent conductive film on a substrate of a display device. The Al-alloy film contains ≤0.5 atom% (not including 0 atom%) of Co, 0.2-2.0 atom% of Ge, and ≤0.5 atom% (not including 0 atom%) of Cu. The Al-alloy film is configured such that a total amount of Co, Ge, and Cu is 0.2-2.0 atom% while satisfying formula (1): Cu/Co≤1.5 or formula (2): 2.5≤Cu/Co≤6.0. In formulas (1), (2), Cu and Co represent a content (atom%) of each element in the Al-alloy film, respectively. COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:提供一种显示装置的铝合金膜,其中与与Al合金膜直接连接的透明像素电极的接触电阻充分降低,并且耐腐蚀性和耐热性得到改善。 解决方案:Al合金膜与显示装置的基板上的透明导电膜直接连接。 Al合金膜含有≤0.5原子%(不包括0原子%)的Co,0.2-2.0原子%的Ge和≤0.5原子%(不包括0原子%)的Cu。 Al合金膜被配置为使得Co,Ge和Cu的总量为0.2-2.0原子%,同时满足式(1):Cu /Co≤1.5或式(2):2.5≤Cu/Co≤6.0 。 在式(1),(2)中,Cu和Co分别表示Al合金膜中各元素的含量(原子%)。 版权所有(C)2010,JPO&INPIT