专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011179054A SPUTTERING TARGET OF Al-BASE ALLOY 有权
标题翻译：铝合金的溅射目标
公开(公告)号：JP2011179054A
公开(公告)日：2011-09-15
申请号：JP2010043073
申请日：2010-02-26
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： IWASAKI YUKI , MATSUMOTO KATSUSHI , TAKAGI TOSHIAKI , NAGAO MAMORU , MAKINO HIDETADA
IPC分类号： C23C14/34 , C22C21/00
CPC分类号： C23C14/3414 , C22C21/00
摘要： PROBLEM TO BE SOLVED: To provide a technology which can suppress the occurrence of splash even though a film is formed at high speed, when having used a sputtering target of an Al-base alloy. SOLUTION: When crystal orientations of , , , and in a normal line direction with respect to each face to be sputtered of a surface layer part, 1/4×t part and 1/2×t part of the sputtering target of the Ni-rare earth element-Al-base alloy have been observed, the sputtering target satisfies the following conditions (1) and (2): (1) when R is defined as the total area rate of ±15°, ±15° and ±15°, R is 0.35 or more but 0.8 or less, and (2) R a , R b and R c are in the range of ±20% of an R average value [R ave =(R a +R b +R c )/3]. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使使用Al基合金的溅射靶，即使在高速形成膜时也能够抑制飞溅的发生的技术。＆lt; P＆gt;解决方案：当相对于要溅射的表面层部分的每个面在法线方向上<001>，<011>，<111>，012和112的晶体取向时，1/4 已经观察到Ni-稀土元素-Al-基合金的溅射靶的×t部分和1/2×t部分，溅射靶满足以下条件（1）和（2）：（1）当R 定义为总面积率<001>±15°，<011>±15°和<112>±15°，R为0.35以上至0.8以下，（2）R SB> R＆lt; SB＆gt; b＆lt; / SB＆gt;和R SB之间的平均值在R平均值的±20％的范围内[R SB = a >一 + R b'/ SB> + R C ）/ 3]。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009263768A SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：基于Al的合金的溅射靶材及其制造方法
公开(公告)号：JP2009263768A
公开(公告)日：2009-11-12
申请号：JP2009053376
申请日：2009-03-06
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , GOTO YASUSHI , MIKI AYA , OKUNO HIROYUKI , OCHI MOTOTAKA , KISHI TOMOYA
IPC分类号： C22C21/00 , B22F3/15 , B22F3/24 , B22F9/08 , C22C21/12 , C22F1/00 , C22F1/04 , C23C14/34
CPC分类号： C23C14/3414 , C22C21/00 , C22F1/04
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy, which reduces the occurrence of splash at the initial stage of the use of the sputtering target, thereby prevents a defect from occurring in a wiring film or the like, and can improve the yield or performance of FPD, and to provide a manufacturing method therefor.
SOLUTION: The sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy comprises each of at least one element selected from the group A (Ni and Co), at least one element selected from the group B (Cu and Ge), and at least one element selected from the group C (La, Gd and Nd); and has Vickers hardness (HV) controlled to 35 or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶，其在初始阶段减少了飞溅的发生使用溅射靶，从而防止在布线膜等中发生缺陷，并且可以提高FPD的产量或性能，并提供其制造方法。解决方案：Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶包含选自A组（Ni和Co）中的至少一种元素，，选自B族（Cu和Ge）中的至少一种元素和选自C（La，Gd和Nd）中的至少一种元素; 维氏硬度（HV）控制在35以上。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2011106025A Al-BASED ALLOY SPUTTERING TARGET 有权
标题翻译：基于Al的合金喷射目标
公开(公告)号：JP2011106025A
公开(公告)日：2011-06-02
申请号：JP2010161002
申请日：2010-07-15
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： MATSUMOTO KATSUSHI , IWASAKI YUKI , TAKAGI TOSHIAKI , NAGAO MAMORU , MAKINO HIDETADA , KOBAYASHI YOSHIHIRO , OKUNO HIROYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a technique for reducing the generation of splashes, particularly, initial splashes in the case an Al-(Ni, Co)-(La, Nd) based alloy or an Al-(Ni, Co)-(La, Nd)-(Cu, Ge) based alloy is used as a sputtering target.
SOLUTION: The Al-based alloy sputtering target comprises: at least one selected from an A group (Ni, Co) and at least one selected from a B group (La, Nd), wherein in the cross-section vertical to the rolling face of the sputtering target, when the crystal grain size in the rolling direction in the face parallel to the rolling direction is measured, the average crystal grain size is ≤500 μm, and also, the maximum crystal grain size is ≤1,500 μm.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少飞溅产生的技术，特别是在Al-（Ni，Co） - （La，Nd）基合金或Al-（Ni，Co ） - （La，Nd） - （Cu，Ge）基合金作为溅射靶。解决方案：Al基合金溅射靶包括：选自A组（Ni，Co）和选自B组（La，Nd）中的至少一种的至少一种，其中在横截面垂直于溅射靶的滚动面在测量与轧制方向平行的轧制方向的晶粒尺寸时，平均晶粒尺寸≤500μm，最大晶粒尺寸≤1,500μm 。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011094216A Al-BASED ALLOY SPUTTERING TARGET 有权
标题翻译：基于Al的合金喷射目标
公开(公告)号：JP2011094216A
公开(公告)日：2011-05-12
申请号：JP2009251398
申请日：2009-10-30
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI TOSHIAKI , MATSUMOTO KATSUSHI , IWASAKI YUKI , MAKINO HIDETADA
IPC分类号： C23C14/34 , C22C21/00 , C22F1/00 , C22F1/04 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide an Al-based alloy sputtering target which is useful for forming a metal thin film excellent in low wiring resistance and hillock resistance and which preferably suppresses the occurrence of splash during sputtering. SOLUTION: The Al-based alloy sputtering target contains 0.0010-0.4 mass% of Fe and 0.0010-0.50 mass% of Si. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种Al基合金溅射靶，其可用于形成低布线电阻和小丘电阻优异的金属薄膜，并且优选抑制溅射期间溅射的发生。解决方案：Al基合金溅射靶含有0.0010-0.4质量％的Fe和0.0010-0.50质量％的Si。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009293108A METHOD FOR PRODUCING Al-BASED ALLOY SPUTTERING TARGET MATERIAL 有权
标题翻译：生产铝基合金溅射靶材的方法
公开(公告)号：JP2009293108A
公开(公告)日：2009-12-17
申请号：JP2008150527
申请日：2008-06-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TOKUHIRA MASAYA , MATSUZAKI HITOSHI , TAUCHI HIRONORI , TAKAGI KATSUHISA , IWASAKI YUKI , NAKAI JUNICHI
IPC分类号： C23C14/34 , B22F1/00 , B22F3/15 , B22F9/08 , C22C1/04 , C22C21/00
CPC分类号： C22C1/0416 , B22F2998/10 , C23C14/3414 , B22F9/082 , B22F1/0003
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an Al-based alloy sputtering target material comprising a rare earth element and a high melting point element having a melting point higher than that of Al at a high yield. SOLUTION: The method includes: a stage where a first powder of an Al-based alloy comprising a rare earth element produced by an atomizing process is prepared; a stage where the first powder and one or more of a second powder composed of a high melting point element X having a melting point higher than that of Al are mixed; and a stage where a powdery mixture of the first powder and the second powder is made dense. In the mixing stage, the maximum particle diameter (a) of the first powder is 10 to 200 μm, the maximum particle diameter (b) of the second powder is 10 to 150 μm and the ratio between the (a) and (b), ((a)/(b)) is 0.5 to 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种含有稀土元素和熔点高于Al的高熔点元素的Al系合金溅射靶材的制造方法。解决方案：该方法包括：制备包含通过雾化工艺制备的稀土元素的Al基合金的第一粉末的阶段; 混合第一粉末和由熔点高于Al的高熔点元素X组成的第二粉末中的一种或多种的阶段; 并且使第一粉末和第二粉末的粉末状混合物致密的阶段。在混合阶段，第一粉末的最大粒径（a）为10〜200μm，第二粉末的最大粒径（b）为10〜150μm，（a）和（b），（（a）/（b））为0.5〜5.版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009242909A Al-Ni-La-Cu-BASED Al ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 有权
标题翻译：基于Al-Ni-La-Cu的Al合金溅射靶材及其制造方法
公开(公告)号：JP2009242909A
公开(公告)日：2009-10-22
申请号：JP2008093071
申请日：2008-03-31
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , TOKUHIRA MASAYA , IWASAKI YUKI , GOTO YASUSHI
IPC分类号： C23C14/34 , B22F3/115 , C22C21/00 , C22F1/00 , C22F1/04 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of decreasing a generation of splashing upon depositing by using an Al-Ni-La-Cu-based Al alloy sputtering target containing Ni, La, and Cu. SOLUTION: The Al-Ni-La-Cu-based Al alloy sputtering target contains Ni, La and Cu, in which (1) a total area of an Al-Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3-3 μm is 70% or more by area ratio based on an entire area of the Al-Ni intermetallic compound, and (2) a total area of an Al-La-Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2-2 μm is 70% or more by area ratio based on an entire area of the Al-La-Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4t (t: thickness) to 3/4t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2,000. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过使用含有Ni，La和Cu的Al-Ni-La-Cu系Al合金溅射靶，沉积时减少溅射产生的技术。解决方案：Al-Ni-La-Cu系Al合金溅射靶包含Ni，La和Cu，其中（1）主要包含Al和Ni并且具有平均值的Al-Ni金属间化合物的总面积基于Al-Ni金属间化合物的整个面积，0.3-3μm的粒径为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积，以及在Al-La-Cu金属间化合物的整个面积上，Cu的平均粒径为0.2〜2μm的面积比为70％以上，在将溅射靶的一部分观察到的范围内通过使用扫描电子显微镜以2000倍的垂直于溅射靶的平面的横截面为1 / 4t（t：厚度）至3 / 4t。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2011127189A Al-BASED ALLOY SPUTTERING TARGET 有权
标题翻译：基于Al的合金喷射目标
公开(公告)号：JP2011127189A
公开(公告)日：2011-06-30
申请号：JP2009287650
申请日：2009-12-18
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI TOSHIAKI , MATSUMOTO KATSUSHI , IWASAKI YUKI , NAGAO MAMORU , MAKINO HIDETADA
IPC分类号： C23C14/34 , C22C21/00
摘要： PROBLEM TO BE SOLVED: To provide an Al-based sputtering target capable of dissolving problems (increase of the number of splashes, rise of electric resistance of deposited thin film) occurring on the initial stage of sputtering and shortening pre-sputtering time. SOLUTION: In the Al-based sputtering target, a sputtering surface has an arithmetic average roughness Ra of 1.50 μm or less and the maximum height Rz of 10 μm or less, wherein, when peak heights in which the height from the center line in the roughness curve to the crest or the valley exceeds (0.25×Rz) are defined as P or Q respectively and P and Q are successively counted over the reference length 100 mm, the average interval L between P and Q appearing just after P and between the Q and P appearing just after the Q is 0.4 mm or more. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够解决在溅射的初始阶段发生的问题（喷溅次数的增加，沉积的薄膜的电阻的上升）以及缩短预溅射时间的Al基溅射靶。解决方案：在Al系溅射靶中，溅射面的算术平均粗糙度Ra为1.50μm以下，最大高度Rz为10μm以下，其中，当高度从中心在峰或谷超过（0.25×Rz）的粗糙度曲线中的线分别被定义为P或Q，并且在参考长度100mm上连续计数P和Q，P和Q之间的平均间隔L出现在P 并且Q和P出现刚好在Q之后为0.4mm以上。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2009046762A Al-Ni-La-Si-BASED AL ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：基于Al-Ni-La-Si的AL合金溅射靶和其生产方法
公开(公告)号：JP2009046762A
公开(公告)日：2009-03-05
申请号：JP2008179299
申请日：2008-07-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , NANBU AKIRA , OCHI MOTOTAKA , GOTO YASUSHI , KAWAKAMI NOBUYUKI
IPC分类号： C23C14/34 , B22F3/115 , B22F3/17 , B22F3/18 , C22C21/00 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： PROBLEM TO BE SOLVED: To provide a technology that can reduce splashes produced when an Al-Ni-La-Si system Al-based alloy sputtering target containing Ni, La and Si is used to deposit a film. SOLUTION: The present invention relates to an Al-Ni-La-Si-based AL alloy sputtering target including Ni, La and Si, in which, when a section from (1/4)t to (3/4)t (t: thickness) in a cross section vertical to the plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2,000 times, (1) the total area of an Al-Ni-based intermetallic compound having an average particle diameter of 0.3 to 3 μm with respect to the total area of the entire Al-Ni-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-based intermetallic compound being mainly composed of Al and Ni; and (2) the total area of an Al-Ni-La-Si-based intermetallic compound having an average particle diameter of 0.2 to 2 μm with respect to the total area of the entire Al-Ni-La-Si-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-La-Si-based intermetallic compound being mainly composed of Al, Ni, La, and Si. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减少含有Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶沉积膜时产生飞溅的技术。解决方案：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系AL合金溅射靶，其中当从（1/4）t至（3/4）用扫描型电子显微镜观察放大2000倍的垂直于溅射靶的平面的截面中的t（t：厚度），（1）具有平均值的Al-Ni系金属间化合物的总面积 Al-Ni类金属间化合物的总面积相对于Al-Ni系金属间化合物的总面积为0.3〜3μm的面积分率为70％以上，Al-Ni类金属间化合物主要由Al，Ni构成 ; 和（2）相对于整个Al-Ni-La-Si系金属间化合物的总面积，平均粒径为0.2〜2μm的Al-Ni-La-Si系金属间化合物的总面积以Al，Ni，La，Si为主要成分的Al-Ni-La-Si系金属间化合物的面积率为70％以上。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2012180264A Oxide sintered compact and sputtering target 有权
标题翻译：氧化物烧结紧凑和溅射目标
公开(公告)号：JP2012180264A
公开(公告)日：2012-09-20
申请号：JP2012025476
申请日：2012-02-08
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： KANAMARU MORIYOSHI , IWASAKI YUKI , MATSUI MINORU , GOTO YASUSHI , NANBU AKIRA
IPC分类号： C04B35/453 , C04B35/457 , C23C14/34 , H01L21/363
CPC分类号： C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, which is an oxide sintered compact having jointly high conductivity and high relative density, capable of forming the oxide semiconductor film having high carrier mobility.SOLUTION: In this oxide sintered compact obtained by mixing and sintering each powder of zinc oxide, tin oxide and indium oxide, when the oxide sintered compact is subjected to X-ray diffraction, assuming that intensity of XRD peak near 2θ=34° is A, intensity of XRD peak near 2θ=31° is B, intensity of XRD peak near 2θ=35° is C, and intensity of XRD peak near 2θ=26.5° is D, following formula (1) is satisfied: 70>[A/(A+B+C+D)]×100≥10 (1).
摘要翻译：解决问题的方案为了提供一种氧化物烧结体，其适用于制造具有共同导电性和高相对密度的氧化物烧结体的显示装置用氧化物半导体膜，能够形成氧化物半导体膜具有高载流子迁移率。解决方案：在通过混合和烧结氧化锌，氧化锡和氧化铟的各种粉末获得的氧化物烧结体中，当氧化物烧结体经受X射线衍射时，假定XRD峰强度在2θ= 34附近 °为A，2θ= 31°附近的XRD峰强度为B，2θ= 35°附近的XRD峰强度为C，2θ= 26.5°附近的XRD峰强度为D，满足公式（1）：70 > [A /（A + B + C + D）]×100≥10（1）。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2013095656A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095656A
公开(公告)日：2013-05-20
申请号：JP2011242892
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： HATAKE HIDEO , TAO KOKI , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/34 , H01L21/203 , H01L21/336 , H01L29/786
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/6562 , C04B2235/658 , C04B2235/661 , C04B2235/767 , C04B2235/80 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact being capable of forming an oxide semiconductor film having high carrier mobility, while suppressing abnormal discharge or cracks.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase, and each crystal phase of InOand ZnO are included, the relative density is ≥95%, and the specific resistance is ≤0.1 Ωcm.
摘要翻译：要解决的问题：为了提供一种用于生产显示装置用氧化物半导体膜的氧化物烧结体，该氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜，同时抑制异常放电或裂缝。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5至7的整数）相，并且In 2 O 3 < / SB>和ZnO，相对密度≥95％，电阻率≤0.1Ωcm。版权所有（C）2013，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式