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1. 发明专利

JP2014058416A Oxide sintered product and sputtering target 有权
标题翻译：氧化物烧结产品和喷射目标
公开(公告)号：JP2014058416A
公开(公告)日：2014-04-03
申请号：JP2012203577
申请日：2012-09-14
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： TAO KOKI , KANAMARU MORIYOSHI , NANBU AKIRA , HATAKE HIDEO
IPC分类号： C04B35/00 , C23C14/34 , H01B1/08
CPC分类号： C23C14/3414 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/604 , C04B2235/6562 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C23C14/08 , C23C14/086 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered product which is suitably used for the manufacturing of an oxide semiconductor film for a display device and can form a stable film by a sputtering method by suppressing abnormal discharge in the film formation of the oxide semiconductor film.SOLUTION: The oxide sintered product according to the present invention which can solve the above problems is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The oxide sintered product has a relative density of 85% or more and a ZnSnOphase and an InGaZnOphase are contained in a predetermined ratio when measured by X-ray diffraction.
摘要翻译：要解决的问题：提供一种氧化物烧结产品，其适用于制造用于显示装置的氧化物半导体膜，并且可以通过溅射法通过抑制氧化物半导体膜的成膜中的异常放电来形成稳定的膜解决方案：通过混合和烧结氧化锌，氧化铟，氧化镓和氧化锡可以得到解决上述问题的根据本发明的氧化物烧结产品。当通过X射线衍射测定时，氧化物烧结体的相对密度为85％以上，ZnSnO相和InGaZnO相为含有量。

2. 发明专利

JP2013095656A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095656A
公开(公告)日：2013-05-20
申请号：JP2011242892
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： HATAKE HIDEO , TAO KOKI , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/34 , H01L21/203 , H01L21/336 , H01L29/786
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/6562 , C04B2235/658 , C04B2235/661 , C04B2235/767 , C04B2235/80 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact being capable of forming an oxide semiconductor film having high carrier mobility, while suppressing abnormal discharge or cracks.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase, and each crystal phase of InOand ZnO are included, the relative density is ≥95%, and the specific resistance is ≤0.1 Ωcm.
摘要翻译：要解决的问题：为了提供一种用于生产显示装置用氧化物半导体膜的氧化物烧结体，该氧化物烧结体能够形成具有高载流子迁移率的氧化物半导体膜，同时抑制异常放电或裂缝。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5至7的整数）相，并且In 2 O 3 < / SB>和ZnO，相对密度≥95％，电阻率≤0.1Ωcm。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013095655A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095655A
公开(公告)日：2013-05-20
申请号：JP2011242891
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： HATAKE HIDEO , TAO KOKI , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/08 , C23C14/34 , H01L21/363
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/658 , C04B2235/661 , C04B2235/767 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact including jointly high conductivity and high relative density, capable of forming an oxide semiconductor film having high carrier mobility, while suppressing abnormal discharge.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase is the main phase, each crystal phase of InOand ZnO is included, the relative density is ≥85%, and the specific resistance is ≤0.1 Ωcm.
摘要翻译：要解决的问题：为了提供一种用于生产显示装置用氧化物半导体膜的氧化物烧结体，所述氧化物烧结体包含共同的高导电性和高相对密度，能够形成具有高的氧化物半导体膜载流子迁移，同时抑制异常放电。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5至7的整数）相为主相，In 2 O 3 ，包含ZnO，相对密度≥85％，电阻率≤0.1Ωcm。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2014058415A Oxide sintered product, sputtering target and method for manufacturing the same 有权
标题翻译：氧化物烧结产品，溅射目标及其制造方法
公开(公告)号：JP2014058415A
公开(公告)日：2014-04-03
申请号：JP2012203576
申请日：2012-09-14
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： TAO KOKI , HATAKE HIDEO , NANBU AKIRA , KANAMARU MORIYOSHI
IPC分类号： C04B35/453 , C04B35/00 , C23C14/34 , H01L21/363
CPC分类号： H01J37/3429 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/64 , C04B2235/3286 , C04B2235/3293 , C04B2235/6562 , C04B2235/658 , C04B2235/66 , C04B2235/763 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C23C14/08 , C23C14/086 , C23C14/3414 , H01J37/3491 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered product suitable used for the manufacturing an oxide semiconductor film for a display device which can form a stable film by a sputtering method by suppressing abnormal discharge in the film formation of the oxide semiconductor film and cracks in a sputter material.SOLUTION: The oxide sintered product according to the present invention which can solve the above problems is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The oxide sintered product has a relative density of 85% or more, the average size of crystal grains observed on the surface of the oxide sintered product is less than 10 μm, a ZnSnOphase and an InGaZnOphase are main phases when the oxide sintered product is measured by X-ray diffraction, and an InGaZnOphase is 3 volume% or less.
摘要翻译：要解决的问题：提供一种适用于制造用于显示装置的氧化物半导体膜的氧化物烧结产品，该显示装置可以通过溅射法形成稳定的膜，通过抑制氧化物半导体膜的成膜中的异常放电和裂纹溅射材料。解决方案：通过混合和烧结氧化锌，氧化铟，氧化镓和氧化锡，可以解决上述问题的根据本发明的氧化物烧结产品。氧化物烧结体的相对密度为85％以上，在氧化物烧结体的表面观察到的晶粒的平均粒径小于10μm，ZnSnO相和InGaZnO相为测量氧化物烧结体时的主相通过X射线衍射，InGaZnO相为3体积％以下。

5. 发明专利

JP2014019930A Target assembly 有权
标题翻译：目标集会
公开(公告)号：JP2014019930A
公开(公告)日：2014-02-03
申请号：JP2012162125
申请日：2012-07-20
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： OCHI MOTOTAKA , HATAKE HIDEO , MATSUMURA HITOMI
IPC分类号： C23C14/34 , H01L21/203 , H01L21/363 , H01L29/786
CPC分类号： C23C14/3407 , H01J37/3411 , H01J37/3414 , H01J37/3426 , H01J37/3435 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a target assembly, in which a plurality of oxide target members are arranged at intervals on a backing plate with a bonding material being placed between the plate and the members, capable of preventing deterioration of TFT properties (in particular a decrease in ON-state current and an increase in SS value) when sputtering is performed using the target assembly, even if contamination occurs in a formed thin oxide film due to the constituents of the backing plate being mixed in through the gaps between the target members.SOLUTION: A target assembly according to the present invention comprises: a lining member, which is placed between an oxide target members and a backing plate in such a manner that intervals are covered with the lining member, and which is composed of one, two or more selected from a group consisting of Ni, Si, Hf and Ta.
摘要翻译：要解决的问题：为了提供一种目标组件，其中多个氧化物靶构件间隔布置在背板上，其中接合材料被放置在板和构件之间，能够防止TFT性能的劣化（特别是即使在使用目标组件进行溅射时导通状态电流的降低和SS值的增加），即使由于背板的成分通过目标物之间的间隙混合而形成的薄氧化膜中发生污染构件。根据本发明的目标组件包括：衬里构件，其被布置在氧化物靶构件和背板之间，使得间隔被衬里构件覆盖，并且由衬垫构件组成，选自由Ni，Si，Hf和Ta组成的组中的两种或更多种。

6. 发明专利

JP2013095657A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095657A
公开(公告)日：2013-05-20
申请号：JP2011242893
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： TAO KOKI , HATAKE HIDEO , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/34
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/767 , C04B2235/77 , C04B2235/782 , C04B2235/786 , C04B2235/80 , C23C14/08 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact being capable of stable film formation by a sputtering method, while suppressing abnormal discharge in formation of the oxide semiconductor film having high carrier mobility.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase is the main phase, the ratio of crystal grains having an average particle size of ≤10 μm and a particle size of ≥30 μm is ≤15%, and the relative density is ≥85%.
摘要翻译：待解决的问题：为了提供适合用于生产显示装置用氧化物半导体膜的氧化物烧结体，所述氧化物烧结体能够通过溅射法成膜稳定，同时抑制形成中的异常放电氧化物半导体膜具有高载流子迁移率。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5〜7的整数）相为主相，平均粒径≤10μm，粒径≥30μm的晶粒的比例为≤15％，相对密度≥85％。版权所有（C）2013，JPO＆INPIT

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