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1. 发明专利

JP2014175604A Semiconductor device and attachment structure of semiconductor element 审中-公开
标题翻译：半导体器件的半导体器件和附件结构
公开(公告)号：JP2014175604A
公开(公告)日：2014-09-22
申请号：JP2013049345
申请日：2013-03-12
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： HAYASHI TOSHIHIKO , IZUMI TORU , ASANO KATSUNORI
IPC分类号： H01L21/52 , H01L23/36 , H01L23/48
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which thermal stress, occurring between a semiconductor element and a support, is relaxed without lowering the thermal conductivity at the connection of the semiconductor element and support, and thereby destruction due to thermal stress can be avoided while ensuring superior heat dissipation.SOLUTION: In a semiconductor device, a groove 21 of a cathode electrode 9 made of Au and a protrusion 22 of a solder layer 4 made of an Au/Sn eutectic alloy are fitted, and the cathode electrode 9 is bonded to an SiC semiconductor laminate 20 on the first bonding surface 9B on the reverse side of the second bonding surface 9A to the solder layer 4, and has ductility higher than that of the solder layer 4. Consequently, when the solder layer 4 is expanded or contracted by heating or cooling, the cathode electrode 9 deforms plastically by receiving a force from the protrusion 22 of the solder layer 4 at the groove 21. By the plastic deformation of the cathode electrode 9, thermal stress occurring between an SiC GTO thyristor element 1 and a support 3 can be relaxed.
摘要翻译：要解决的问题：提供半导体元件和支撑体之间发生热应力的半导体器件，而不会降低半导体元件和支撑件的连接处的导热性，从而可以由于热应力而导致的破坏避免同时确保优异的散热。解决方案：在半导体器件中，安装由Au制成的阴极9的凹槽21和由Au / Sn共晶合金制成的焊料层4的突起22，并且阴极电极9 在第二接合面9A的相反侧的第一接合面9B上与焊料层4接合到SiC半导体层叠体20，并且具有比焊料层4更高的延展性。因此，当焊料层4为通过加热或冷却而膨胀或收缩，阴极电极9通过在槽21处接收来自焊料层4的突起22的力而塑性变形。通过塑性变形阴极电极9的离子，可以放松在SiC GTO晶闸管元件1和支撑体3之间产生的热应力。

2. 发明专利

JP2005187791A Phosphor and light-emitting diode 有权
标题翻译：磷光体和发光二极管
公开(公告)号：JP2005187791A
公开(公告)日：2005-07-14
申请号：JP2004087110
申请日：2004-03-24
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： KINOSHITA HIROYUKI , SHIOMI HIROSHI , SASAKI MAKOTO , HAYASHI TOSHIHIKO , AMANO HIROSHI , KAMIYAMA SATOSHI , IWATANI MOTOAKI , AKASAKI ISAMU
IPC分类号： C09K11/65 , C09K11/08 , C09K11/62 , H01L21/203 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/45144 , H01L2224/48091 , H01L2224/49109 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a phosphor capable of being excited by a long-wavelength light source in an ultraviolet region or a visible region of a blue color to a violet color and capable of emitting light mainly in a visible region of the violet color through the blue color and a yellow color to a red color, and to provide a light-emitting diode capable of being easily mounted, excellent in color rendering properties, capable of being given at a low cost, and scarcely causing changes in coloration due to radiation angles. SOLUTION: This phosphor made of SiC is excited by the external light source and emits the light, wherein the substance is doped by at least one kind of elements of B and Al, and further by N. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供能够在紫外区域或蓝色可见区域中的长波长光源被紫色激发的荧光体，并且能够主要在可见光区域发光通过蓝色的紫色和黄色到红色，并且提供能够容易地安装的发光二极管，显色性能优异，能够以低成本给出，并且几乎不引起变化由于辐射角度而着色。解决方案：由SiC制成的该荧光体被外部光源激发并发射光，其中物质被B和Al的至少一种元素掺杂，进一步由N掺杂。（版权所有： C）2005，JPO＆NCIPI

3. 发明专利

JP2005132703A Method for manufacturing silicon carbide substrate, and silicon carbide substrate 有权
标题翻译：制造碳化硅基板和碳化硅基板的方法
公开(公告)号：JP2005132703A
公开(公告)日：2005-05-26
申请号：JP2003372935
申请日：2003-10-31
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , SASAKI MAKOTO , KINOSHITA HIROYUKI , HARADA MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： C30B29/36 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an SiC substrate capable of efficiently correcting camber and to provide the SiC substrate obtained by the method.
SOLUTION: The manufacturing method of the SiC substrate includes a step of forming an ingot consisting of SiC, a step of heating the ingot and a step of cutting the ingot in a prescribed thickness after cooling the ingot. The SiC substrate obtained by the manufacturing method of the SiC substrate is used as a substrate for a semiconductor device.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够有效地校正弯度并提供通过该方法获得的SiC衬底的SiC衬底的制造方法。解决方案：SiC衬底的制造方法包括形成由SiC组成的锭的步骤，加热锭的步骤和在冷却锭之后将锭切割成规定厚度的步骤。将通过SiC衬底的制造方法获得的SiC衬底用作半导体器件的衬底。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2014229817A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014229817A
公开(公告)日：2014-12-08
申请号：JP2013109798
申请日：2013-05-24
申请人：関西電力株式会社 , Kansai Electric Power Co Inc:The , 株式会社Adeka , Adeka Corp , 株式会社Adeka
发明人： IZUMI TORU , ASANO KATSUNORI , HAYASHI TOSHIHIKO , HIWATARI KENICHIRO , SAIKI TOMOAKI
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要：【課題】高温環境下での信頼性を向上できる半導体装置を提供する。【解決手段】このSiC GTOサイリスタ装置によれば、樹脂製被覆本体21と支持体3との間に耐熱性および耐酸化性を有する樹脂製接合部18を形成して、樹脂製被覆本体21と支持体3とが直接に接合された界面の外周部樹脂製被覆本体21と支持体3とが直接に接合された界面の外周部が露出しないように、上記界面の外周部を耐熱性および耐酸化性を有する樹脂製接合部18により覆うことによって、高温環境下での酸化による接着力の低下が抑制され、樹脂製被覆本体21が支持体3から剥離するのを防止できる。【選択図】図1
摘要翻译：要解决的问题：提供可以在高温环境下提高可靠性的半导体器件。解决方案：根据本发明的SiC GTO晶闸管器件，通过在树脂涂层体21之间形成具有耐热性和抗氧化性的树脂结合部18 以及支撑介质3，其覆盖树脂涂层体21和支撑介质3与具有耐热性和抗氧化性的树脂粘合部分18直接接合的边界表面的周边，以便不暴露边界表面的周边在高温环境下由于氧化引起的粘合力劣化被抑制，并且可以防止树脂涂层体21与支撑介质3分离。

5. 发明专利

JP2011061139A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011061139A
公开(公告)日：2011-03-24
申请号：JP2009211793
申请日：2009-09-14
申请人： Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： HAYASHI TOSHIHIKO , IZUMI TORU , SUGAWARA YOSHITAKA
IPC分类号： H01L23/36 , H01L23/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the occurrence of a crack on an insulating substrate of a package with a simple structure. SOLUTION: The semiconductor device includes a package having a ceramic substrate 32 with a semiconductor element mounted thereon, and a metal base plate 31 with the ceramic substrate 32 joined to a main plane 31a. On a side face side of the ceramic substrate 32, an inclined plane 32c is formed which has a distance to the main plane 31a of the metal base plate 31 gradually increased toward the outside from an edge in contact with the metal base plate 31, and an angle formed by the inclined plane 32c and the main plane 31a of the metal base plate 31 is acute. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供能够以简单的结构防止在封装的绝缘基板上发生裂纹的半导体器件。解决方案：半导体器件包括具有安装在其上的半导体元件的陶瓷基板32的封装以及与主平面31a连接的陶瓷基板32的金属基板31。在陶瓷基板32的侧面形成有与金属基板31接触的边缘向金属基板31的主面31a延伸的距离逐渐增大的斜面32c，由倾斜平面32c和金属基板31的主平面31a形成的角度是锐角的。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2006124246A Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate 审中-公开
标题翻译：单晶碳化硅单晶硅基板的制造方法
公开(公告)号：JP2006124246A
公开(公告)日：2006-05-18
申请号：JP2004316459
申请日：2004-10-29
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , HAYASHI TOSHIHIKO , KINOSHITA HIROYUKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal which can efficiently manufacture an SiC single crystal having high resistivity and to provide an SiC substrate having high resistivity obtained by the method.
SOLUTION: The method of manufacturing an silicon carbide single crystal comprises manufacturing a silicon carbide single crystal from a material containing silicon and a material containing carbon, wherein the method comprises a step for adding a transition metal to at least one of a material containing silicon and a material containing carbon, a step for producing a gas containing silicon and carbon by heating the material containing silicon and the material containing carbon, and a step for causing a recrystallization of silicon and carbon. The SiC substrate is obtained by cutting the SiC single crystal obtained by this method to a predetermined thickness.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造可以有效制造具有高电阻率的SiC单晶的SiC单晶的方法，并提供通过该方法获得的具有高电阻率的SiC衬底。解决方案：制造碳化硅单晶的方法包括由含硅的材料和含有碳的材料制造碳化硅单晶，其中该方法包括将过渡金属加到至少一种材料中的步骤含有硅和含碳的材料，通过加热含有硅的材料和含有碳的材料来生产含有硅和碳的气体的步骤，以及引起硅和碳的再结晶的步骤。通过将通过该方法获得的SiC单晶切割成预定厚度来获得SiC衬底。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005093519A Silicon carbide substrate and method of manufacturing the same 有权
标题翻译：碳化硅基材及其制造方法
公开(公告)号：JP2005093519A
公开(公告)日：2005-04-07
申请号：JP2003321392
申请日：2003-09-12
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , SASAKI MAKOTO , KINOSHITA HIROYUKI , HARADA MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon carbide (SiC) substrate by which an SiC substrate which is ideal for the manufacturing of semiconductor devices can be manufactured efficiently, and to provide the SiC substrate manufactured by the method.
SOLUTION: The method of manufacturing the SiC substrate 4 includes a step of forming an SiC ingot 3, a step of forming a wafer 4a by cutting the ingot 3, and a step of making the radius of curvature of a wafer 4a to ≥35 m by heating the wafer 4a. The surface of the SiC substrate 4 manufactured by this method has a defect density of ≥1.1×10
2 defects/cm
2 and ≤1.0×10
9 defects/cm
2 .
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造碳化硅（SiC）基板的方法，通过该方法可以有效地制造对于制造半导体器件是理想的SiC衬底，并提供通过该方法制造的SiC衬底。解决方案：制造SiC衬底4的方法包括形成SiC锭3的步骤，通过切割锭3形成晶片4a的步骤，以及使晶片4a的曲率半径为通过加热晶片4a≥35μm。通过该方法制造的SiC衬底4的表面具有缺陷密度≥1.1×10 缺陷/ cm 2 和≤1.0×10 SP>缺陷/厘米 2 。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005093477A Method for cvd epitaxial growth 有权
标题翻译： CVD外延生长方法
公开(公告)号：JP2005093477A
公开(公告)日：2005-04-07
申请号：JP2003320819
申请日：2003-09-12
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , HARADA MAKOTO , KINOSHITA HIROYUKI , SASAKI MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： C23C16/32 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for CVD epitaxial growth by which the thickness of a crystal growth film can be uniformized without rotating a substrate.
SOLUTION: In the method for the CVD epitaxial growth of SiC, the partial pressure of a gas containing x mol Si in a 1 mol material gas is adjusted to ≥33.33/x(Pa) when the gas is used as a feed gas. In this case, it is preferable that the difference between the central temperature of the gas existing on a substrate and the temperature of the substrate is ≤200°C and the central temperature of the gas is ≥1,300°C.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于CVD外延生长的方法，通过该方法可以使晶体生长膜的厚度在不旋转衬底的情况下均匀化。解决方案：在SiC的CVD外延生长方法中，当气体用作进料时，在1mol材料气体中含有xmol Si的气体的分压被调节至≥33.33/ x（Pa）加油站。在这种情况下，优选存在于基板上的气体的中心温度与基板的温度之间的差为≤200℃，气体的中心温度为≥300℃。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005019595A Heat sink and its manufacturing method, and semiconductor device 有权
标题翻译：散热及其制造方法及半导体器件
公开(公告)号：JP2005019595A
公开(公告)日：2005-01-20
申请号：JP2003180787
申请日：2003-06-25
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , HARADA MAKOTO , KINOSHITA HIROYUKI , SASAKI MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： H01L23/36 , H01L21/60 , H01L23/373
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a heat sink having an electric insulating property and a high thermal conductivity at a low cost. SOLUTION: A heat sink material for dissipating heat of electronic components which has a dielectric breakdown strength of 2×10 V or above is obtained by forming an electric insulation film on a substrate formed of single crystal SiC to block micropipes of the substrate and planarize the surface thereof. The principal plane of the substrate is a plane separated by 10° or more from a (0001) plane. A conductive film is formed on the principal plane of the substrate, and an electronic component from which heat should be dissipated such as a semiconductor laser is brazed on the film. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2015005570A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2015005570A
公开(公告)日：2015-01-08
申请号：JP2013128774
申请日：2013-06-19
申请人：関西電力株式会社 , Kansai Electric Power Co Inc:The
发明人： HAYASHI TOSHIHIKO , ITSUMI TETSURO , IZUMI TORU , ASANO KATSUNORI
IPC分类号： H01L23/36 , H01L23/12 , H01L23/13
摘要：【課題】高電圧で使用した場合にも絶縁性を確保できると共に熱抵抗を低減できる半導体装置を提供する。【解決手段】この半導体装置によれば、第1,第2の2層の絶縁層5,7の間に第1の熱拡散層6を挟んだ構造によって、2層の絶縁層5,7でもって高電圧での使用時の電気的な絶縁性を確保できると共に第1の熱拡散層6によって各層5〜6の表面に沿った方向への熱拡散を促進でき、熱抵抗を低減できる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够在高电压下使用时能够确保绝缘性并能够降低耐热性的半导体器件。解决方案：在具有第一热扩散层6夹持的结构的半导体器件中在绝缘层5,7或第一和第二层之间，两层或绝缘层5,7确保在高电压下使用时的电绝缘性，此外，第一热扩散层6促进沿该方向的热扩散沿着层5-6的表面，以降低耐热性。

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