专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005093478A Method for cvd epitaxial growth 有权
标题翻译： CVD外延生长方法
公开(公告)号：JP2005093478A
公开(公告)日：2005-04-07
申请号：JP2003320820
申请日：2003-09-12
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , HARADA MAKOTO , KINOSHITA HIROYUKI , SASAKI MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for CVD epitaxial growth by which the concentration of an impurity can be uniformized without rotating a substrate.
SOLUTION: In this CVD epitaxial method of SiC, the difference between the temperature of a gas on the upstream side of a substrate and the temperature of the gas on the downstream side of the substrate is adjusted to 0-200°C. In addition, it is preferable that the difference between the central temperature of the gas existing on the substrate and the temperature of the substrate is ≤200°C and the central temperature of the gas is ≥1,300°C.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于CVD外延生长的方法，通过该方法，可以使杂质的浓度在不旋转衬底的情况下均匀化。解决方案：在SiC的CVD外延法中，将基板上游侧的气体的温度与基板的下游侧的气体的温度之差调整为0〜200℃。此外，优选存在于基板上的气体的中心温度与基板的温度之间的差为≤200℃，气体的中心温度为≥300℃。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP3692076B2 How SiC single crystal and its growth 有权
公开(公告)号：JP3692076B2
公开(公告)日：2005-09-07
申请号：JP2001521813
申请日：2000-09-06
申请人：三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人：弘塩見 , 恒暢木本 , 弘之松波
IPC分类号： C30B23/00 , C30B23/02 , C30B29/36 , H01L21/205
CPC分类号： C30B23/00 , C30B23/02 , C30B29/36
摘要： A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a ä03-38ü plane 30u or a plane which is inclined at off angle alpha , within about 10 DEG , with respect to the ä03-38ü plane, is exposed.

3. 发明专利

JP2005223206A GROWTH METHOD OF 3C-SiC CRYSTAL 有权
标题翻译： 3C-SiC晶体的生长方法
公开(公告)号：JP2005223206A
公开(公告)日：2005-08-18
申请号：JP2004030911
申请日：2004-02-06
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： NISHIGUCHI TARO , NAKAMURA MITSUHIRO , MUKAI YUSUKE , NISHIO KOJI , ISSHIKI TOSHIYUKI , OSHIMA SATORU , NISHINO SHIGEHIRO
IPC分类号： C30B29/36 , C23C16/42 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a 3C-SiC crystal which can reduce a crystal defect.
SOLUTION: In the growth method of the 3C-SiC crystal, the (111) surface of the 3C-SiC crystal is subjected to epitaxial vapor growth almost parallel on the (110) surface of an Si crystal substrate. It is preferable that the method comprises a process for setting an Si crystal substrate in a growth chamber, a process for forming a carbonized buffer crystal film on the (110) surface of the Si crystal substrate by making gas containing C flow in the growth chamber, and a process for forming a 3C-SiC crystal on the carbonized buffer crystal film by making gas containing Si and C flow in the growth chamber.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少晶体缺陷的3C-SiC晶体。解决方案：在3C-SiC晶体的生长方法中，3C-SiC晶体的（111）表面在Si晶体衬底的（110）表面上几乎平行地进行外延气相生长。优选该方法包括在生长室中设置Si晶体基板的方法，在Si晶体基板的（110）表面上形成碳化缓冲晶体膜的工艺，通过在生长室中形成含有C流的气体以及通过在生长室中形成含有Si和C的气体在碳化缓冲液晶膜上形成3C-SiC晶体的工序。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005132703A Method for manufacturing silicon carbide substrate, and silicon carbide substrate 有权
标题翻译：制造碳化硅基板和碳化硅基板的方法
公开(公告)号：JP2005132703A
公开(公告)日：2005-05-26
申请号：JP2003372935
申请日：2003-10-31
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , SASAKI MAKOTO , KINOSHITA HIROYUKI , HARADA MAKOTO , HAYASHI TOSHIHIKO
IPC分类号： C30B29/36 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an SiC substrate capable of efficiently correcting camber and to provide the SiC substrate obtained by the method.
SOLUTION: The manufacturing method of the SiC substrate includes a step of forming an ingot consisting of SiC, a step of heating the ingot and a step of cutting the ingot in a prescribed thickness after cooling the ingot. The SiC substrate obtained by the manufacturing method of the SiC substrate is used as a substrate for a semiconductor device.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够有效地校正弯度并提供通过该方法获得的SiC衬底的SiC衬底的制造方法。解决方案：SiC衬底的制造方法包括形成由SiC组成的锭的步骤，加热锭的步骤和在冷却锭之后将锭切割成规定厚度的步骤。将通过SiC衬底的制造方法获得的SiC衬底用作半导体器件的衬底。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP4015075B2 Heat sink, the method of manufacturing a semiconductor device and 有权
公开(公告)号：JP4015075B2
公开(公告)日：2007-11-28
申请号：JP2003180787
申请日：2003-06-25
申请人：三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人：信佐々木 , 真原田 , 弘塩見 , 博之木下 , 利彦林
IPC分类号： H01L23/36 , H01L21/60 , H01L23/373
CPC分类号： H01L2924/0002 , H01L2924/00

6. 发明专利

JP2006128479A Insulated film formation method and silicon carbide semiconductor device 审中-公开
标题翻译：绝缘膜形成方法和碳化硅半导体器件
公开(公告)号：JP2006128479A
公开(公告)日：2006-05-18
申请号：JP2004316461
申请日：2004-10-29
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SASAKI MAKOTO , KINOSHITA HIROYUKI , SHIOMI HIROSHI
IPC分类号： H01L21/316 , C30B29/36 , C30B33/02 , H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an insulated film that suppresses an increase in the quantity of crystal defects in the SiC crystal and improves an insulated film formation speed on the SiC crystal and an SiC semiconductor device with an insulated film created by this method.
SOLUTION: This method concerns insulated film formation on the SiC crystal 1. It consists of a process for forming an Si film 2 on the SiC crystal 1, and a process for forming an insulated film 2 containing Si by oxidizing or nitriding the Si film 2. In addition, this method can be used to manufacture a silicon carbide semiconductor device.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成绝缘膜的方法，其抑制SiC晶体中的晶体缺陷量的增加，并提高SiC晶体上的绝缘膜形成速度和具有绝缘的SiC半导体器件通过这种方法创造的电影。解决方案：该方法涉及SiC晶体1上的绝缘膜形成。它由在SiC晶体1上形成Si膜2的工艺和通过氧化或氮化形成含有Si的绝缘膜2的工艺 Si膜2.此外，该方法可用于制造碳化硅半导体器件。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006124245A Silicon carbide single crystal, silicon carbide substrate and method of manufacturing silicon carbide single crystal 有权
标题翻译：硅碳化硅单晶，碳化硅基体及其制造方法单晶碳化硅
公开(公告)号：JP2006124245A
公开(公告)日：2006-05-18
申请号：JP2004316458
申请日：2004-10-29
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SHIOMI HIROSHI , KINOSHITA HIROYUKI
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal which can provide an SiC single crystal that exhibits high resistivity and an SiC substrate, and can stably manufacture an SiC single crystal that exhibits high resistivity. SOLUTION: The SiC single crystal is an SiC single crystal which comprises a first dopant that has a function as an acceptor and a second dopant that has a function as a donor, wherein the content of the first dopant is 5×10 15 /cm 3 or more, and the content of the second dopant is 5×10 15 /cm 3 or more, and further the content of the first dopant is more than the content of the second dopant. The method of manufacturing a silicon carbide single crystal comprises a step for producing a raw material by mixing a metal boride into a material containing carbon and silicon, a step for vaporizing the raw material, a step for forming a mixed gas containing carbon, silicon, boron and nitrogen, and a step for growing a silicon carbide single crystal that contains boron and nitrogen on the surface of a seed crystal substrate by a recrystallization of the mixed gas on the surface of the seed crystal substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造能够提供具有高电阻率的SiC单晶和SiC衬底的SiC单晶的方法，并且可以稳定地制造具有高电阻率的SiC单晶。解决方案：SiC单晶是SiC单晶，其包含具有作为受主的功能的第一掺杂剂和具有作为供体的功能的第二掺杂剂，其中第一掺杂剂的含量为5×10 < SP> 15 / cm 3 / SP> 3以上，第二掺杂剂的含量为5×10 / cm 3 更多，并且进一步地，第一掺杂剂的含量大于第二掺杂剂的含量。制造碳化硅单晶的方法包括通过将金属硼化物混合到含有碳和硅的材料中制造原料的步骤，用于蒸发原料的步骤，用于形成含有碳，硅的混合气体的步骤，硼和氮，以及通过在晶种基底的表面上重结晶混合气体，在晶种基底的表面上生长含有硼和氮的碳化硅单晶的步骤。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005217290A Heatsink, manufacturing method thereof, and semiconductor device 审中-公开
标题翻译： HEATSINK，其制造方法和半导体器件
公开(公告)号：JP2005217290A
公开(公告)日：2005-08-11
申请号：JP2004023974
申请日：2004-01-30
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： KINOSHITA HIROYUKI , SHIOMI HIROSHI
IPC分类号： H05K7/20 , H01L23/36
摘要： PROBLEM TO BE SOLVED: To provide a heatsink for semiconductor devices generating much heat which also has little current loss and has few exfoliations of the metal coat formed on the surface of its SiC substrate. SOLUTION: The heatsink uses the SiC substrate wherein the density of micro-pipes present in its principal surface is not smaller than 30/cm 2 . Also, the heatsink is provided with a sub-mount using the SiC substrate wherein the density of micro-pipes present in its principal surface is not smaller than 30/cm 2 . In such heatsink, there is preferred the aspect wherein at least the surface of the SiC substrate is coated with the metal material of the composition including at least one kind selected from the group comprising Ni, Co, Fe, Mo, Ti, Cr, Al, Au, Ag, and Cu. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了产生大量热量的半导体器件提供散热器，该热量也具有很小的电流损耗，并且在其SiC衬底的表面上形成的金属涂层几乎没有剥落。
解决方案：散热器使用SiC基板，其中存在于其主表面中的微管的密度不小于30 / cm 2 SP / 2。此外，散热器设置有使用SiC衬底的子座，其中存在于其主表面中的微管的密度不小于30 / cm 2。在这样的散热器中，优选至少在SiC基板的表面涂覆有包含Ni，Co，Fe，Mo，Ti，Cr，Al中的至少一种的组合物的金属材料，Au，Ag和Cu。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005187791A Phosphor and light-emitting diode 有权
标题翻译：磷光体和发光二极管
公开(公告)号：JP2005187791A
公开(公告)日：2005-07-14
申请号：JP2004087110
申请日：2004-03-24
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： KINOSHITA HIROYUKI , SHIOMI HIROSHI , SASAKI MAKOTO , HAYASHI TOSHIHIKO , AMANO HIROSHI , KAMIYAMA SATOSHI , IWATANI MOTOAKI , AKASAKI ISAMU
IPC分类号： C09K11/65 , C09K11/08 , C09K11/62 , H01L21/203 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/45144 , H01L2224/48091 , H01L2224/49109 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a phosphor capable of being excited by a long-wavelength light source in an ultraviolet region or a visible region of a blue color to a violet color and capable of emitting light mainly in a visible region of the violet color through the blue color and a yellow color to a red color, and to provide a light-emitting diode capable of being easily mounted, excellent in color rendering properties, capable of being given at a low cost, and scarcely causing changes in coloration due to radiation angles. SOLUTION: This phosphor made of SiC is excited by the external light source and emits the light, wherein the substance is doped by at least one kind of elements of B and Al, and further by N. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供能够在紫外区域或蓝色可见区域中的长波长光源被紫色激发的荧光体，并且能够主要在可见光区域发光通过蓝色的紫色和黄色到红色，并且提供能够容易地安装的发光二极管，显色性能优异，能够以低成本给出，并且几乎不引起变化由于辐射角度而着色。解决方案：由SiC制成的该荧光体被外部光源激发并发射光，其中物质被B和Al的至少一种元素掺杂，进一步由N掺杂。（版权所有： C）2005，JPO＆NCIPI

10. 发明专利

JP2007131504A SiC EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译： SiC外延晶体管和半导体器件
公开(公告)号：JP2007131504A
公开(公告)日：2007-05-31
申请号：JP2005328993
申请日：2005-11-14
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： TANAKA SATORU , FUJII MASAHIRO , SHIOMI HIROSHI , KINOSHITA HIROYUKI , NISHIGUCHI TARO
IPC分类号： C30B29/36 , C23C16/32 , C23C16/42 , C30B25/20 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an SiC epitaxial single crystal having excellent performances; a method for epitaxially growing the same; and a wafer and a semiconductor device, manufactured by using the SiC epitaxial single crystal. SOLUTION: The method for manufacturing the SiC epitaxial wafer has a process comprising setting the surface of an SiC substrate so as to have an off-angle within 5.74±1° or 2.86±0.7° from the (0001) plane and epitaxially growing an SiC crystal on the SiC substrate. In the method for manufacturing the SiC epitaxial wafer, the off-angle is preferably within 5.74±0.5° or 2.86±0.5° from the (0001) plane, further preferably within 5.74±0.3° or 2.86±0.3° from the (0001) plane. Further, the method for manufacturing the SiC epitaxial wafer is characterized in that the SiC substrate is manufactured from an SiC crystal deposited on an SiC substrate by an improved Rayleigh's method. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异性能的SiC外延单晶; 外延生长方法; 以及通过使用SiC外延单晶制造的晶片和半导体器件。解决方案：用于制造SiC外延晶片的方法包括将SiC衬底的表面设置成与（0001）面和外延的（0001）面偏离5.74±1°或2.86±0.7° 在SiC衬底上生长SiC晶体。在制造SiC外延晶片的方法中，偏离角优选为（0001）面的5.74±0.5°或2.86±0.5°之间，进一步优选在距离（0001）的5.74±0.3°或2.86±0.3°的范围内，平面。此外，SiC外延晶片的制造方法的特征在于，SiC衬底由通过改进的Rayleigh方法沉积在SiC衬底上的SiC晶体制造。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式