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    • 1. 发明专利
    • Formation of multiple electrode thin film
    • 形成多个电极薄膜
    • JPS61116825A
    • 1986-06-04
    • JP23810884
    • 1984-11-12
    • Kanegafuchi Chem Ind Co Ltd
    • HAMAKAWA YOSHIHIRONISHIMURA KUNIONAKAYAMA TAKEHISATSUSHIMO KAZUNAGAOWADA YOSHIHISAHIRATA HISANORIIZUMINA MASANOBU
    • H01L31/04C23C16/50H01L21/20H01L21/205H01L21/31
    • H01L21/0262H01L21/02532
    • PURPOSE:To form a substantially large size thin film on a substrate placed outside the discharge region through discharges at respective regions by providing at least three electrodes and supplying high frequency power to each electrode. CONSTITUTION:A substrate 4 is held 8 within a vacuum tank 7 with the thin film forming side placed downward, the electrodes 9a-9e are arranged with the interval for generating uniform plasma between them, a substrate 4 is heated 7 from the rear surface and a high frequency power is supplied 10. The power is supplied to each pair of electrodes 9a, 9c, 9e and electrode 9b, 9d to form uniform discharge between each electrode. Each electrode is perpendicular to paper surface and has predetermined length. The power supply apparatus 10 matches the power supplied from the high frequency power supply 11 with the load by capacitances 13a, 13b in the circuit 12 and supplies the power to two pairs through adjustment with capacitance 13c. Such floating type matching circuit forms symmetrical plasma between electrodes. With such structure, large size and uniform thin film can be formed without rotation of sample board.
    • 目的:通过提供至少三个电极并向每个电极提供高频功率,通过在各个区域放电,在放电区域外的衬底上形成基本上大的薄膜。 构成:将基板4保持在真空槽7内,薄膜形成侧向下放置,电极9a-9e以其间隔产生均匀等离子体的间隔排列,基板4从后表面加热7, 提供高频电力10.向每对电极9a,9c,9e和电极9b,9d提供电力,以在每个电极之间形成均匀的放电。 每个电极垂直于纸面并具有预定的长度。 电源装置10通过电路12中的电容1​​3a,13b将来自高频电源11的电力与负载进行匹配,并通过电容13c的调整将电力供给两对。 这种浮动型匹配电路在电极之间形成对称的等离子体。 利用这种结构,可以在没有样品板的旋转的情况下形成大尺寸和均匀的薄膜。
    • 2. 发明专利
    • Glow discharge type film formation equipment
    • 玻璃放电型薄膜成型设备
    • JPS618914A
    • 1986-01-16
    • JP12951984
    • 1984-06-22
    • Kanegafuchi Chem Ind Co LtdShimadzu Corp
    • OOWADA YOSHIHISANAKAYAMA TAKEHISATAI MASAHIKOIKUJI NOZOMI
    • H01L31/04B09C1/02C23C14/38C23C14/54C23C16/50C23C16/509H01J37/32H01L21/205
    • H01J37/32174B09C1/02C23C16/509H01J37/32082
    • PURPOSE:To simply make film formation speed equal if right and left semiconductor layers have different film formation speed by varying the capacity of a condenser connected in series to a separated electrode since this can greatly vary the film formation speeds of the right and the left semiconductor layers. CONSTITUTION:RF electrodes 1a, 1b are two metal plates placed in parallel on both sides of an insulation material 2 and each metal plate is connected in series to condensers which are adjusting means of RF, e.g., a fixed condenser 6b and a variable condenser 6a outside a reactor. On both sides of the RF electrodes 1a, 1b, a pair of grounded electrodes 3a, 3b are placed in parallel with the RF electrode surfaces and on the electrodes 3a, 3b, substrates 4a, 4b are placed. The RF electrodes are electrically divided in two and at least one of the RF electrodes is connected to the RF adjusting means in series. This enables to form a film on both sides of the RF electrodes 1a, 1b and even if film formation speeds on both sides are different, the film formation speeds can arbitrarily be adjusted by adjusting the RF adjusting means.
    • 目的:为了简单地使成膜速度相等,如果左右半导体层通过改变串联连接到分离电极的电容器的容量而具有不同的成膜速度,因为这可以大大改变右半导体和右半导体的成膜速度 层。 构成:RF电极1a,1b是在绝缘材料2的两侧平行放置的两个金属板,并且每个金属板串联连接到作为RF的调节装置的电容器,例如固定电容器6b和可变电容器6a 在反应堆外面。 在RF电极1a,1b的两侧,一对接地电极3a,3b与RF电极表面平行放置,并且在电极3a,3b上放置衬底4a,4b。 RF电极被分成两部分,并且至少一个RF电极串联连接到RF调节装置。 这使得能够在RF电极1a,1b的两侧形成膜,并且即使两面的成膜速度不同,也可以通过调整RF调节装置来任意调节成膜速度。
    • 3. 发明专利
    • Formation of thin film
    • 形成薄膜
    • JPS61116826A
    • 1986-06-04
    • JP23810984
    • 1984-11-12
    • Kanegafuchi Chem Ind Co Ltd
    • NISHIMURA KUNIONAKAYAMA TAKEHISATSUSHIMO KAZUNAGAOWADA YOSHIHISAHIRATA HISANORIIZUMINA MASANOBU
    • H01L31/04H01L21/20H01L21/205H01L21/31
    • H01L21/0262H01L21/02532
    • PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.
    • 目的:通过匹配电路和电气元件从单个电源中提供3〜5个奇偶数电极线的RF电源,并通过改变电常数来形成整个区域均匀厚度的薄膜 的电气元件。 构成:电气元件13b,13d连接在匹配电路12的端子12a和偶数的电极9b,9d之间,而端子12b和电极9a,9c,9e之间的电气元件13a,13c,13e为奇数 。 选择电气元件的连接方式,位置和种类,使得每个放电区域的均匀放电变得均匀。 在形成薄膜时,将原料气体引入真空状态,并且还向每个电极提供RF功率以在电极之间形成等离子体,并且通过调节电气元件将区域的放电强度设定为均匀。 因此,使用可变电容和可变线圈是有利的。 根据该结构,即使采用具有多个放电区域的侧面等离子体方法,也能够在各个区域形成均匀厚度的薄膜。
    • 4. 发明专利
    • Measuring method for volatile component in liquid
    • 挥发性成分在液体中的测量方法
    • JPS5729925A
    • 1982-02-18
    • JP10559480
    • 1980-07-30
    • Kanegafuchi Chem Ind Co Ltd
    • NAKAYAMA TAKEHISA
    • G01N27/62G01N1/22G01N7/00G01N30/04
    • G01N7/00
    • PURPOSE:To continuously measure the density of a volatile component existing in a liquid exactly and stably for a long period of time, by collecting a volatile component in a liquid, controlling the feed pressure of carrier gas passing through one side of a liquid-repelling porous partition body, and detecting the density of the volatile component. CONSTITUTION:Pressure of the gaseous phase side is controlled so that a pressure difference DELTAPkg/cm between a liquid to be measured of one side placing a liquid repelling porous partition body between them, and its opposite gaseous phase part becomes ), a value which is decided by surface tension sigma dyne of a liquid to be measured, a contact angle theta which is generated when the liquid to be measured contacts with a porous partition material, and the hole diameter R(mu) corresponding to a microscopic hole of the porous partition body. Moreover, the density of a volatile component contained in this liquid to be measured is measured by leading the gas from gaseous phase to a detector intermittently or continously, and measuring and detecting the density of a volatile component which is transmitted to gaseous phase from the liquid to be measured.
    • 目的:通过将挥发性成分收集在液体中,连续测量液体中稳定稳定地存在于液体中的挥发性成分的浓度,控制通过排液一侧的载气的进料压力 多孔分隔体,并检测挥发性成分的密度。 构成:控制气相侧的压力,使得在其间放置液体排斥多孔分隔体的一侧的被测量液体与其相反的气相部分之间的压力差DELTAPkg / cm 2变为<= DELTAP = 0.02sigmacostheta / R(kg / cm 2),由被测定液体的表面张力σdyne决定的值,待测量的液体与多孔分隔材料接触时产生的接触角θ ,以及与多孔分隔体的微细孔对应的孔径R(mu)。 此外,通过将气体从气相间歇地或连续地引导到检测器来测量包含在待测量的液体中的挥发性成分的密度,并且测量和检测从液体中传递到气相的挥发性成分的密度 待测。
    • 5. 发明专利
    • Formation of film
    • 形成电影
    • JPS6115321A
    • 1986-01-23
    • JP13754784
    • 1984-07-02
    • Kanegafuchi Chem Ind Co LtdShimadzu Corp
    • NAKAYAMA TAKEHISAOOWADA YOSHIHISATAI MASAHIKOIKUJI NOZOMI
    • H01L31/04H01L21/205
    • Y02E10/50
    • PURPOSE: To make the velocity for forming semiconductor films of the right and left same easily by operating electric elements such as capacitors or coils connected to the separated electrodes.
      CONSTITUTION: RF electrodes 1a and 1b are two metallic plates arranged in parallel through an insulating film 2 interlaid and capacitors 6a and 6b are connected to the respective metallic plate in the outside of a reactor. The high frequency wave RF supplied from the electrodes 1a and 1b is divided into two through a matching circuit M and is supplied to the capacitor 6a and 6b. On both sides of the electrodes 1a and 1b, ground electrodes 3a and 3b are arranged in parallel to the plane of the RF electrodes and substrates 4a and 4b are placed on said electrodes 3a and 3b. Thus the electrodes 1a and 1b are electrically divided into two and the capacitors 6a and 6b are connected to the electrodes 1a and 1b in series respectively, thereby enabling the film formation on both sides of the electrodes 1a and 1b. If the velocity for forming films differs in the right and left, the velocity can be adjusted arbitrarily by changing a capacity of the capacitor 6a.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过操作诸如连接到分离的电极的电容器或线圈等电气元件,使得左右相互形成半导体膜的速度容易。 构成:RF电极1a和1b是两个金属板,它们通过绝缘膜2并联布置,并且电容器6a和6b连接到反应器外部的各个金属板。 从电极1a和1b供给的高频波RF通过匹配电路M被分成两部分,并被提供给电容器6a和6b。 在电极1a和1b的两侧,接地电极3a和3b平行于RF电极的平面布置,并且将基片4a和4b放置在所述电极3a和3b上。 因此,电极1a和1b被电分为两个,电容器6a和6b分别连接到电极1a和1b,从而能够在电极1a和1b的两侧形成膜。 如果形成膜的速度在左右不同,则可以通过改变电容器6a的容量来任意地调节速度。