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1. 发明专利

JPS6132416A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6132416A
公开(公告)日：1986-02-15
申请号：JP15253184
申请日：1984-07-23
申请人： Kanegafuchi Chem Ind Co Ltd , Res Dev Corp Of Japan
发明人： KONDO MASATAKA , TANDO TOSHITO , NISHIMURA KUNIO , TSUSHIMO KAZUNAGA , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L21/205
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02592
摘要： PURPOSE:To reduce the decline of characteristics caused by reduction and metallization of a transparent conductive film of oxide by specifying the temperature for forming films at a time when an amorphous silicon film is formed on the transparent conductive film. CONSTITUTION:On a transparent conductive film of oxide such as ITO, the amorphous semiconductor which consists of a-Si:H, a-SiC:H at a first dope layer, a-Si:H, a-Si:F as an intrinsic layer, a-SiC:H, a-Si:H as the second dope layer, (the conductive type is opposite to that of the first dope layer) is deposited. The temperature for forming the first dope layer is set at 180 deg.C, the temperatures for the intrinsic layer and the second impurity dope layer are set at 160- 350 deg.C. The temperature for the first dope layer is more preferably 10-40 deg.C by which a substrate is cooled. As a result, the transparent conductive film becomes hard to be reduced even when it contacts with a reducing plasma including hydrogen atoms and the decline of semiconductor characteristics such as the generation of recombination center caused by pollution of the semiconductor layer by the produced metal.
摘要翻译：目的：通过在透明导电膜上形成非晶硅膜时规定形成薄膜的温度来减少氧化物透明导电膜的还原和金属化引起的特性的下降。构成：在诸如ITO的氧化物的透明导电膜上，在第一掺杂层上由a-Si：H，a-SiC：H组成的非晶半导体，a-Si：H，a-Si：F作为内在的作为第二掺杂层的a-SiC：H，a-Si：H（导电类型与第一掺杂层的导电类型相反）。用于形成第一掺杂层的温度设定为180℃，本征层和第二杂质掺杂层的温度设定在160-350℃。第一涂料层的温度更优选为10-40℃，通过该温度冷却基材。结果，即使当透明导电膜与包括氢原子的还原等离子体接触以及半导体特性的下降（例如由所产生的金属对半导体层的污染引起的复合中心的产生）时，也难以降低。

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