专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS61144562A GAS SENSOR 失效
公开(公告)号：JPS61144562A
公开(公告)日：1986-07-02
申请号：JP26809584
申请日：1984-12-18
申请人： KURARAY CO
发明人： NAKAMURA MICHIHIRO , YANO MAKOTO , IKETANI HIDEHIKO , KITANO KAZUNOBU , OKAMOTO TAKEHIKO , OMORI AKIO
IPC分类号： G01N27/414
摘要： PURPOSE:To eliminate the variance of the characteristic of a gas sensor and to obviate the change in the outside shape of the sensor by coating the gate part of a slender gate insulated field transistor and a reference electrode with porous hollow yarn containing a gas absorptive liquid. CONSTITUTION:The ion sensor 1 of the gate insulated field effect transistor construction, the comparator 2 and a lead wire 4 are provided in a tubular body 5. The gate part 7 of the ion sensor 1 and part of the reference electrode 2 are coated with the porous hollow yarn 8. The gas absorptive liquid 9 is filled in the yarn 8 and the gap between the yarn and the sensor 1. The part above the yarn 8 is coated with a gas permeable membrane 10. The hollow yarn made of PVA, polyacrylonitrile, etc. is used for the yarn 8. The carbon dioxide and ammonia in the blood vessel are measured by such gas sensor. The top end of the sensor is coated with the hollow yarn and therefore the production is made easy. Since the shape and pore distribution are made uniform, the variance in the characteristics of the sensor is decreased.

2. 发明专利

JPS61155851A SEMICONDUCTOR ION SENSOR 失效
公开(公告)号：JPS61155851A
公开(公告)日：1986-07-15
申请号：JP27638484
申请日：1984-12-28
申请人： KURARAY CO
发明人： YANO MAKOTO , NAKAMURA MICHIHIRO , IKETANI HIDEHIKO , KITANO KAZUNOBU , SHIBATANI KYOICHIRO
IPC分类号： G01N27/00 , G01N27/414
摘要： PURPOSE:To improve the durability of an ion sensor and to reduce the size thereof by coating a gate region of a field effect transistor having a needle-like structure with a hollow yarn-like film consisting of a hydrophobic high polymer contg. an ion sensitive material. CONSTITUTION:A lead wire 2 is connected to a source electrode and drain electrode 1 of the gate-insulated field effect transistor and is coated with a catheter 3. The gate region of the electrode 1 projecting from the catheter 3 is coated with the hollow yarn-like film 5 consisting of the hydrophobic high- polymer having the ion sensitive material. The resin 6 is sealed into the aperture at the top end thereof. Plastic PVC, silicon, etc. which are incorporated therein with the ion sensitive material, i.e., valinomycin, crown ether, etc. are used for the film 5. Such sensor is constituted to a single or multiple sensors. Since the hollow yarn-like film is used, the ion sensor is made water-proof and is obtd. with the simple stage.

3. 发明专利

JPS61154540A APPARATUS FOR MEASURING CONCENTRATION OF GAS IN BLOOD 失效
公开(公告)号：JPS61154540A
公开(公告)日：1986-07-14
申请号：JP27852484
申请日：1984-12-26
申请人： KURARAY CO
发明人： NAKAMURA MICHIHIRO , YANO MAKOTO , IKETANI HIDEHIKO , KITANO KAZUNOBU
IPC分类号： A61B5/15 , A61B5/145 , A61B5/1473 , A61B5/1495 , G01N27/416 , G01N33/497

4. 发明专利

JPS61155850A ENZYME SENSOR 失效
公开(公告)号：JPS61155850A
公开(公告)日：1986-07-15
申请号：JP27638384
申请日：1984-12-28
申请人： KURARAY CO
发明人： YANO MAKOTO , NAKAMURA MICHIHIRO , IKETANI HIDEHIKO , KITANO KAZUNOBU , SHIBATANI KIYOUICHIROU
IPC分类号： G01N27/327 , C12Q1/00 , G01N27/414
摘要： PURPOSE:To maintain the specified thickness of an enzyme-immobilized film and to improve the durability of an enzyme sensor by coating a porous or hydrophilic hollow yarn-like film immobilized with enzyme to the sensitive part of a slender superminiature electrode. CONSTITUTION:A source electrode and drain electrode 1 of a semiconductor ion sensor are provided in a catheter 2 and a lead wire 3 is connected thereto. The top end of a sensor 1 is used as the sensitive part (gate region) 4 and is projected from the catheter 2. The part 4 is coated with the porous hollow yarn-like film 6 immobilized with the enzyme and a resin 7 is sealed into the aperture at the top end thereof. The circumference of the electrode 1 is fixed with an electrical insulating layer 8. For example, the porous hollow yarn-like film which is made of PP or PVA and is immobilized with urease, glucose oxidase, etc. is used for the film. The hollow yarn-like film immobilized with the enzyme is used for the enzyme sensor and therefore the durability and performance of the sensor are improved.

5. 发明专利

JPS61151453A FLOW-THROUGH CELL TYPE ION SENSOR 失效
公开(公告)号：JPS61151453A
公开(公告)日：1986-07-10
申请号：JP27666184
申请日：1984-12-25
申请人： KURARAY CO
发明人： YANO MAKOTO , IKETANI HIDEHIKO , KITANO KAZUNOBU , NAKAMURA MICHIHIRO
IPC分类号： G01N27/28 , G01N27/414
摘要： PURPOSE:To obtain a flow-through cell type analyser capable of measuring concn. from a small amount of a specimen, by providing the gate responsive region of an ion sensor in the elongated recessed groove formed to a flat substrate. CONSTITUTION:The title flow-through cell type ion sensor 1 constituted of ISFET12, wherein an elongated recessed groove 11 forming a specimen flow channel is provided to a flat silicon substrate 10, and lid 3 integrally attached to said groove 11. The gate responsive region of ISFET is formed to the recessed groove 11 and the source electrode 2 and drain electrode 3 of the ion sensor 1 are respectively connected to lead wires 4. The specimen enters the cell 1 from an inflow port 5 and passes on the gate responsive region to be flowed out of an outflow port 6. The length, width and thickness of the flow-through cell type ion sensor are respectively several ten-several mm and there is no joint part between cells and, therefore, measurement using an extremely small amount of a specimen is enabled.

6. 发明专利

JPS6267436A PRESERVATION OF CHEMICALLY SENSITIVE SEMICONDUCTOR SENSOR 失效
公开(公告)号：JPS6267436A
公开(公告)日：1987-03-27
申请号：JP20848885
申请日：1985-09-19
申请人： KURARAY CO
发明人： NAKAMURA MICHIHIRO , YANO MAKOTO , IKETANI HIDEHIKO , KITANO KAZUNOBU
IPC分类号： G01N27/00 , G01N27/12
摘要： PURPOSE:To inhibit characteristic changes in water of a semiconductor sensor having silicon nitride on the outermost surface thereof when preserved in an aqueous solution, by using a silicate aqueous solution as the solution. CONSTITUTION:It is noted that the characteristic of a semiconductor sensor having a silicon nitride as pH sencitive film suffers a noticeable secular change in an aqueous solution. Such a characteristic change can be inhibited remarkably by preserving it in a silicate aqueous solution. The silicate herein used in the preserving solution to inhibit this characteristic change may be any choice of an alkali salt such as sodium silicate, potassium silicate and lithium silicate or a water-soluble silicate such as cilicotungstic acid and silicomolybdic acid. The concentration of the silicate is preferably 0.1wt.% to 50wt.%. This preserving solution allows the coexistence of components necessary for the preservation of a liquid junction type comparison electrode, for example, sodium chloride and potassium chloride with the silicate and requires no adjustment of pH particularly.

你已经成功收藏专利！

检索式保存成功!

IPRDB