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1. 发明专利

JP2005088056A Casting apparatus 审中-公开
标题翻译：铸造设备
公开(公告)号：JP2005088056A
公开(公告)日：2005-04-07
申请号：JP2003325975
申请日：2003-09-18
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： TANIGUCHI KENICHI , DOUTANI YASUO , TSUZUKIBASHI KOJI
IPC分类号： B22D23/00 , B22D7/06
摘要： PROBLEM TO BE SOLVED: To reliably prevent the impurity contamination into molten metal, in a casting apparatus for producing a polycrystal silicon ingot, etc., under an inert gas atmosphere.
SOLUTION: This casting apparatus is provided with: a mold 2 for holding molten metal 7 and having an opening part at the upper part; a gas tube 5 for supplying inert gas 8 toward the surface of the molten metal 7; and a cover 6 having an inserting hole 6a for inserting the gas tube 5 and fitted to the opening part of the mold 2. In a state the cover 6 is fitted to the opening part of the mold 2, a plurality of gaps 14, 14, etc., for communicating the inner part and outer part of the mold 2 are provided. The total area of the plurality of gaps 14, 14, etc., is set to ≤5% of the area of the opening part in the mold 2. All of the maximum outer diameters of respective inscribed circles of the plurality of gaps 14, 14, etc., are set to ≥2 mm.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在惰性气体气氛下可靠地防止杂质污染到熔融金属中，在用于制造多晶硅锭的铸造设备中。解决方案：该铸造设备设有：用于保持熔融金属7的模具2，并且在上部具有开口部分; 用于向熔融金属7的表面供给惰性气体8的气体管5; 以及盖6，其具有用于插入气体管5并装配到模具2的开口部的插入孔6a。在将盖6装配到模具2的开口部的状态下，多个间隙14,14 等，用于连通模具2的内部和外部部分。多个间隙14,14等的总面积被设定为模具2中的开口部的面积的±5％。多个间隙14,14的各内接圆的最大外径， 14等设定为≥2mm。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2007130687A Crucible for melt-casting high purity silicon 有权
标题翻译：用于熔铸高纯度硅
公开(公告)号：JP2007130687A
公开(公告)日：2007-05-31
申请号：JP2006210768
申请日：2006-08-02
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： TANIGUCHI KENICHI , TSUZUKIBASHI KOJI
IPC分类号： B22D25/04 , C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a crucible for producing a high purity silicon ingot by melt-casting a silicon raw material without contaminating the same by boron.
SOLUTION: Regarding the crucible for melting and casting a silicon raw material, so as to produce a silicon ingot having a structure where an internal layer in which molten silica powder is coupled by silica is formed at the inside face thereof, the internal layer comprises group 6a elements in the periodic table. In the method for producing a high purity silicon ingot, the crucible is used. The high purity silicon ingot is obtained by the method.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过熔融浇铸硅原料来生产高纯度硅锭而不用硼污染的坩埚。解决方案：关于用于熔融和铸造硅原料的坩埚，以便在其内表面上形成具有其中通过二氧化硅结合熔融二氧化硅粉末的内部层的结构的硅锭，内部层包含周期表中的6a族元素。在制造高纯度硅锭的方法中，使用坩埚。通过该方法获得高纯度硅锭。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007131512A Crucible for high purity silicon melt casting 有权
标题翻译：可用于高纯硅熔体铸造
公开(公告)号：JP2007131512A
公开(公告)日：2007-05-31
申请号：JP2006210767
申请日：2006-08-02
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： TANIGUCHI KENICHI , TSUZUKIBASHI KOJI
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a crucible for manufacturing a high purity silicon ingot by carrying out moltenly casting of a raw silicon material such that it is not contaminated by boron.
SOLUTION: The crucible for high purity silicon melt casting for melting and casting the raw silicon material to manufacture silicon ingots has a structure formed with an inner layer wherein molten silica powder is joined by silica on an inner face of the crucible. The inner layer contains any element of group 4a and group 5a elements in The Periodic Table of the Elements. There is provided a method for manufacturing a high purity silicon ingot using the crucible. There is provided a high purity silicon ingot obtained by the method.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种用于制造高纯度硅锭的坩埚，通过使原料硅材料熔融铸造，使其不被硼污染。解决方案：用于熔融和铸造原料硅以制造硅锭的用于高纯度硅熔体铸造的坩埚具有形成有内层的结构，其中熔融二氧化硅粉末通过二氧化硅在坩埚的内表面上连接。内层在元素周期表中包含组4a和组5a元素的任何元素。提供了使用坩埚制造高纯度硅锭的方法。提供了通过该方法获得的高纯度硅锭。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2005257184A Crucible for high purity silicon melt casting 有权
标题翻译：可用于高纯硅熔体铸造
公开(公告)号：JP2005257184A
公开(公告)日：2005-09-22
申请号：JP2004070053
申请日：2004-03-12
申请人： Jiemuko:Kk , Mitsubishi Materials Corp , 三菱マテリアル株式会社 , 株式会社ジェムコ
发明人： TANIGUCHI KENICHI , TSUZUKIBASHI KOJI
IPC分类号： B22D41/02 , B22D21/00 , B22D27/18 , C01B33/02 , F27B14/10 , F27D1/00
摘要： PROBLEM TO BE SOLVED: To provide a crucible for manufacturing a high purity silicon ingot by carrying out moltenly casting of a raw silicon material such that it is not contaminated by boron.
SOLUTION: The crucible for high purity silicon melt casting for melting and casting the raw silicon material to manufacture silicon ingots has a structure formed with an inner layer wherein molten silica powder is joined by silica on an inner face of the crucible. It is characterized by that the inner layer contains strontium.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于制造高纯度硅锭的坩埚，通过使原料硅材料熔融铸造，使其不被硼污染。解决方案：用于熔融和铸造原料硅以制造硅锭的用于高纯度硅熔体铸造的坩埚具有形成有内层的结构，其中熔融二氧化硅粉末通过二氧化硅在坩埚的内表面上连接。其特征在于内层含有锶。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2013059776A Method for producing cast product, the cast product, and casting mold 审中-公开
标题翻译：铸造产品，铸造产品和铸造模具的生产方法
公开(公告)号：JP2013059776A
公开(公告)日：2013-04-04
申请号：JP2011198448
申请日：2011-09-12
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社 , Mmc Superalloy Corp , Mmcスーパーアロイ株式会社
发明人： MATSUI TAKANORI , FUKUDA TADASHI , TANIGUCHI KENICHI , TAKIZAWA HIDEO
IPC分类号： B22C9/06
摘要： PROBLEM TO BE SOLVED: To provide: a method for producing a cast product which controls the occurrence position of microshrinkage at the inside of a product, and can secure strength in a high stress-applied part; the cast product; and a casting mold used for the method for producing the casting product.SOLUTION: In the method for producing a casting product, molten metal is fed to a casting mold 20, and a cast product is formed. The casting mold 20 includes: a product molding part 21; and a cooling fin molding part 25 connected to the product molding part 21. The molten metal is fed to the product molding part 21 and the cooling fin molding part 25, a cooling fin part is formed in the cooling fin molding part 25, and the region in which the cooling fin part has been formed in the product molding part 21 is preferentially solidified.
摘要翻译：解决的问题：提供一种控制产品内部的微收缩发生位置的铸造产品的制造方法，能够确保高应力部的强度。铸造产品; 以及用于铸造产品的制造方法的铸模。解决方案：在铸造产品的制造方法中，熔融金属被供给到铸模20中，并且形成铸造产品。铸模20包括：产品成型部21; 以及与产品成型部21连接的冷却翅片成形部25.将熔融金属供给到产品成型部21和冷却翅片成型部25，在冷却翅片成型部25中形成冷却翅片部，优选地，在产品成型部21中形成有冷却翅片部的区域被固化。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010212465A THIN-FILM TRANSISTOR USING BARRIER LAYER AS STRUCTURE LAYER, AND Cu ALLOY SPUTTERING TARGET USED FOR SPUTTERING DEPOSITION OF THE BARRIER LAYER 有权
标题翻译：使用作为结构层的障碍层的薄膜晶体管和用于溅射沉积层的铜合金溅射靶
公开(公告)号：JP2010212465A
公开(公告)日：2010-09-24
申请号：JP2009057359
申请日：2009-03-11
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： MAKI KAZUMASA , TANIGUCHI KENICHI , NAKAZATO YOSUKE , MORI AKIRA
IPC分类号： H01L29/786 , C22C9/00 , C22C9/01 , C23C14/34 , H01L21/285 , H01L21/336 , H01L29/417
CPC分类号： H01L29/458 , C22C9/01 , C23C14/165 , C23C14/3414 , H01L29/4908 , H01L29/66765
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor in which a barrier film and an n-type Si semiconductor layer have a high adhesion strength. SOLUTION: In performing sputtering deposition under an oxidizing atmosphere of the barrier layer which constructs the thin-film transistor, a Cu alloy sputtering target is used, which is constructed of a Cu alloy which has a component composition consisting of Al of 1 to 10 atom%, Ca of 0.1 to 2 atom%, and the balance comprising Cu and inevitable impurities (1% or less). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中阻挡膜和n型Si半导体层具有高粘合强度的薄膜晶体管。解决方案：在构成薄膜晶体管的阻挡层的氧化气氛下进行溅射沉积，使用Cu合金溅射靶，其由Cu合金构成，该Cu合金的组成成分由Al组成为1 至10原子％，Ca为0.1至2原子％，余量包含Cu和不可避免的杂质（1％以下）。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008254040A Method for casting eutectic alloy 审中-公开
标题翻译：铸造防腐合金的方法
公开(公告)号：JP2008254040A
公开(公告)日：2008-10-23
申请号：JP2007100350
申请日：2007-04-06
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： TANIGUCHI KENICHI , SAKAMOTO TOSHIO
IPC分类号： B22D27/20 , B22D27/02 , B22D27/04 , B22D27/08
摘要： PROBLEM TO BE SOLVED: To provide a method for casting an eutectic alloy, capable of obtaining a cast ingot provided with an eutectic part composed only of an eutectic structure, and further capable of controlling the boundary position between a non-eutectic part and an eutectic part in the solidified direction.
SOLUTION: In the method for casting an eutectic alloy where the molten metal of an eutectic ally is charged inside a die, and the molten metal in the die is unidirectionally solidified, so as to obtain a cast ingot, in the obtained cast ingot, one end side in the solidified direction is a non-eutectic part including a structure other than an eutectic structure, and the other end side is an eutectic part including an eutectic structure, and, by stirring or rocking the molten metal in the die, the boundary position between the non-eutectic part and the eutectic part is adjusted.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种铸造共晶合金的方法，其能够获得具有仅由共晶结构构成的共晶部分的铸锭，并且还能够控制非共晶部分之间的边界位置和固化方向的共晶部分。解决方案：在将共晶合金的熔融金属装入模具内并将模具中的熔融金属单向凝固的共晶合金的铸造方法中，在获得的铸件中锭的固化方向的一端侧是包含除了共晶结构以外的结构的非共晶部，另一端是包含共晶结构的共晶部，并且通过在模具中搅拌或摇摆熔融金属，调整非共晶部分和共晶部分之间的边界位置。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2004160465A Integrated mold closely sticking cooling plate on bottom surface of mold and its manufacturing method 审中-公开
公开(公告)号：JP2004160465A
公开(公告)日：2004-06-10
申请号：JP2002326578
申请日：2002-11-11
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： TANIGUCHI KENICHI , SAKAMOTO TOSHIO
IPC分类号： B22D7/06 , B22C9/06 , B22D27/04
摘要： PROBLEM TO BE SOLVED: To provide an integrated mold closely sticking a cooling plate on a bottom surface of the mold and its manufacturing method. SOLUTION: In the integrated mold 14 constituted of the mold 1 and the cooling plate 4 closely stuck to the bottom surface 9 of the mold, the closely stuck surface to the bottom surface 9 of the mold of the above cooling plate 4 is a cast surface in perfect contact with the bottom surface of the mold, and the integrated mold is manufactured by casting so that molten cooling plate material is brought into direct contact with the bottom surface of the mold. COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2013224248A Polycrystal silicon ingot, and method for manufacturing polycrystal silicon ingot 有权
标题翻译：多晶硅丝，以及制造多晶硅的方法
公开(公告)号：JP2013224248A
公开(公告)日：2013-10-31
申请号：JP2013002562
申请日：2013-01-10
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社 , Mitsubishi Materials Electronic Chemicals Co Ltd , 三菱マテリアル電子化成株式会社
发明人： NAKADA YOSHINOBU , TAKITA KENJI , KANEKAWA KINJI , TANIGUCHI KENICHI , TSUZUKIBASHI KOJI
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a polycrystal silicon ingot capable of being suppressed in generation of cracks, chips and invisible microcracks even when being subjected to cutting process, and a method for manufacturing a polycrystal silicon ingot.SOLUTION: A polycrystal silicon ingot is composed of a unidirectional solidification texture, wherein there occurs no cracks; and the maximum principal strain amount is made ≤100 με, preferably ≤50 με, and still more preferably ≤10 με.
摘要翻译：要解决的问题：提供即使在进行切割时也能够抑制裂纹，碎片和不可见微裂纹的产生的多晶硅锭，以及多晶硅锭的制造方法。解决方案：多晶硅锭组成的单向凝固织构，其中不发生裂纹; 最大主应变量为≤100μe，优选为≤50μegr，进一步优选为≤10μe。

10. 发明专利

JP2010103331A Sputtering target for forming wiring film for thin-film transistor 有权
标题翻译：用于形成薄膜晶体管布线的溅射靶
公开(公告)号：JP2010103331A
公开(公告)日：2010-05-06
申请号：JP2008273938
申请日：2008-10-24
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： MAKI KAZUMASA , KOIDE MASATO , MORI AKIRA , TANIGUCHI KENICHI , NAKAZATO YOSUKE
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/786
CPC分类号： H01L23/53233 , C22C9/00 , C23C14/165 , C23C14/3414 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target to form a wiring film and a wiring base film for a gate electrode, a source electrode, a drain electrode and so on of a thin-film transistor with superior adhesiveness. SOLUTION: The sputtering target for forming a wiring film for a thin-film transistor contains 0.1-5 atom% Mg and 0.1-10 atom% Ca, and it contains 0.1-10 atom% of one kind or total of two kinds of Mn and Al if needed. Furthermore, it also contains 0.001-0.1 atom% P if needed, and its remaining portion includes a composition of Cu and unavoidable impurities. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射靶，以形成具有优异粘附性的薄膜晶体管的栅电极，源电极，漏电极等的布线膜和布线基膜。解决方案：用于形成薄膜晶体管布线膜的溅射靶包含0.1-5原子％的Mg和0.1-10原子％的Ca，并且它含有0.1-10原子％的一种或两种的Mn和Al。此外，如果需要，其还含有0.001-0.1原子％P，其余部分包括Cu和不可避免的杂质的组成。版权所有（C）2010，JPO＆INPIT

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