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1. 发明专利

JP2005203123A Charged particle beam device 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：JP2005203123A
公开(公告)日：2005-07-28
申请号：JP2004005225
申请日：2004-01-13
申请人： Jeol Ltd , Sony Corp , ソニー株式会社 , 日本電子株式会社
发明人： AKI YUICHI , INAGAKI TAKAO , KOMATSUBARA TAKAO
IPC分类号： H01J37/18 , G11B7/26 , H01J37/301 , H01J37/305 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a charged particle beam device in which a charged particle beam channel reaches a given vacuum state in a short time when re-starting the device. SOLUTION: The device is provided with an electro-optic lens barrel 1 equipped with an electron gun chamber 2, a first intermediate chamber 3, a second intermediate chamber 4 and an objective lens part 10, a stage 22 having a rotating stand 23 to load a subject for irradiation on under the electro-optic lens barrel 1, and an exhaust block 14 arranged at an end part of the electro-optic lens barrel 1 so as to exhaust air in a gap between the electro-optic lens barrel 1 and the subject for irradiation 26. The electron gun chamber 2, the first intermediate chamber 3 and the second intermediate chamber 4 have an exclusive pump 7, 8, 9 each, with a partitioning valve 29, 42 each provided between the electron gun chamber 2 and the first intermediate chamber 3 and between the second intermediate chamber 4 and the objective lens part 10. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种带电粒子束装置，其中当重新启动装置时，带电粒子束通道在短时间内达到给定的真空状态。解决方案：该装置设置有装备有电子枪室2，第一中间室3，第二中间室4和物镜部分10的电光镜筒1，具有旋转支架的平台22 23将电光镜筒1下方的照射物放置在电光镜筒1的端部，排出块14排出电光镜筒1之间的空隙电子枪室2，第一中间室3和第二中间室4分别具有专用泵7,8,9，分隔阀29,42分别设置在电子枪室 2和第一中间室3以及第二中间室4和物镜10之间。（C）2005年，JPO＆NCIPI

2. 发明专利

JP2004086935A Device and method for original disk exposure 有权
公开(公告)号：JP2004086935A
公开(公告)日：2004-03-18
申请号：JP2002242454
申请日：2002-08-22
申请人： Jeol Ltd , Sony Corp , ソニー株式会社 , 日本電子株式会社
发明人： INAGAKI TAKAO , SUZUKI AKITOSHI , AKI YUICHI , KAWASE HIROSHI , YAMAMOTO MASANOBU , DATE NAOKI , NORIOKA SETSUO , KOIZUMI MITSURU , NIIKURA TAKAO , MUTO MASAO
IPC分类号： G03F7/20 , G11B7/26 , G11B9/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an original disk exposure device and an original disk exposure method in which measurement is constantly conducted for the amount of illuminating current without interrupting exposure operation of electron beams that illuminate a base body and use is made of the electron beams whose illuminating current amount is controlled by the measurement value.
SOLUTION: The device is provided with an electron gun control section 38 which controls an electron gun 1, reflected electron detectors 8a and 8b which detect reflected electrons generated by illuminating a base body 9 with electron beams, an illuminating current amount monitoring section 40 which monitors the amount of illuminating current based on the amount of reflected electrons, a direct electron detector 10 in which electron beams by an electron beam illumination adjusting means are directly made incident and illuminating current amount is detected and an illuminating current amount detection control section 39 which controls the generation of electron beams by change information in a prescribed interval of the illuminating current amount based on at least the reflected electron amount and the illuminating current amount based on direct incident of electron beams so as to control the illuminating current amount of the exposure electron beams.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2007012652A Thin-film transistor substrate and manufacturing method thereof 审中-公开
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：JP2007012652A
公开(公告)日：2007-01-18
申请号：JP2005187629
申请日：2005-06-28
申请人： Sony Corp , ソニー株式会社
发明人： TOYODA MOTOHIRO , WADA HIROYUKI , INAGAKI TAKAO , SUMIDA KOSEI , HAYASHI NAOTERU , ARAI TOSHIAKI
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate that has a structure capable of preventing the warpage of the substrate, and hence can ensure long-term strength and characteristics.
SOLUTION: In the thin-film transistor substrate 1 having a gate insulating film 7 formed on the substrate 3, and a semiconductor thin film 9 pattern-formed on the gate insulating film 7, a groove pattern 101 is formed at a position outside the semiconductor thin film 9 on the gate insulating film 7. The gate insulating film 7 comprises the laminated structure of a silicon nitride film 7a and a silicon oxide film 7b at the upper portion of the silicon nitride film 7a. The groove pattern 101 is formed on the silicon nitride film 7a. The substrate 3 is made of a glass material.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有能够防止基板翘曲的结构的薄膜晶体管基板，因此可以确保长期的强度和特性。解决方案：在具有形成在基板3上的栅极绝缘膜7的薄膜晶体管基板1和图案形成在栅极绝缘膜7上的半导体薄膜9上，形成凹槽图案101 在栅极绝缘膜7上的半导体薄膜9的外部。栅极绝缘膜7包括在氮化硅膜7a的上部的氮化硅膜7a和氧化硅膜7b的层叠结构。沟槽图案101形成在氮化硅膜7a上。基板3由玻璃材料制成。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007005508A Method for manufacturing thin film transistor and for display device 有权
标题翻译：制造薄膜晶体管和显示器件的方法
公开(公告)号：JP2007005508A
公开(公告)日：2007-01-11
申请号：JP2005182835
申请日：2005-06-23
申请人： Sony Corp , ソニー株式会社
发明人： TATSUKI KOICHI , UMETSU NOBUHIKO , TSUKIHARA KOICHI , ARAI TOSHIAKI , INAGAKI TAKAO
IPC分类号： H01L29/786 , G09F9/30 , H01L21/20 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To improve a channel layer of a thin film transistor showing less characteristics change in a threshold voltage, etc., less scattering in electric characteristics, and sufficient breakdown voltage.
SOLUTION: A method for manufacturing a reverse staggered thin film transistor includes a process of forming the channel layer 18 of the thin film transistor. The process comprises a step 3 of forming an amorphous silicon film 14, a buffer film 31, and a light-heat conversion film 32 on a gate insulating film 13 in increasing order; a step 4 of emitting semiconductor laser light 16 onto the light-heat conversion film 32 to crystallize the amorphous silicon film 14 into a microcrystalline silicon film 15; a step 5 of eliminating the light-heat conversion film 32 and the buffer film 31; and a step 6 of forming an amorphous silicon film 17 on the microcrystalline silicon film 15.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了改善薄膜晶体管的沟道层，其显示出阈值电压等的特性变化较小，电特性的散射少，以及足够的击穿电压。解决方案：制造反向交错薄膜晶体管的方法包括形成薄膜晶体管的沟道层18的工艺。该方法包括以逐渐增加的顺序在栅极绝缘膜13上形成非晶硅膜14，缓冲膜31和光热转换膜32的步骤3; 将半导体激光16发射到光热转换膜32上以将非晶硅膜14结晶成微晶硅膜15的步骤4; 消除光热转换膜32和缓冲膜31的步骤5; 以及在微晶硅膜15上形成非晶硅膜17的步骤6。（C）2007，JPO＆INPIT

5. 发明专利

JP2012099847A Method for manufacturing thin film transistor substrate 有权
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：JP2012099847A
公开(公告)日：2012-05-24
申请号：JP2012005268
申请日：2012-01-13
申请人： Sony Corp , ソニー株式会社
发明人： TOYODA MOTOHIRO , WADA HIROYUKI , INAGAKI TAKAO , SUMIDA KOSEI , HAYASHI NAOTERU , ARAI TOSHIAKI
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor substrate that has a structure capable of preventing warpage of the substrate, and hence can ensure long-term strength and characteristics.SOLUTION: In a thin-film transistor substrate 1 having a gate insulating film 7 formed on a substrate 3, and a semiconductor thin film 9 pattern-formed on the gate insulating film 7, a groove pattern 101 is formed at a position outside the semiconductor thin film 9 on the gate insulating film 7. The gate insulating film 7 comprises the laminated structure of a silicon nitride film 7a and a silicon oxide film 7b at the upper portion of the silicon nitride film 7a. The groove pattern 101 is formed on the silicon nitride film 7a. The substrate 3 is made of a glass material.
摘要翻译：解决的问题：提供一种具有能够防止基板翘曲的结构的薄膜晶体管基板的制造方法，能够确保长期的强度和特性。解决方案：在具有形成在基板3上的栅极绝缘膜7的薄膜晶体管基板1和在栅极绝缘膜7上图案形成的半导体薄膜9，在一个位置上形成凹槽图案101 在栅极绝缘膜7上的半导体薄膜9的外部。栅极绝缘膜7包括在氮化硅膜7a的上部的氮化硅膜7a和氧化硅膜7b的层叠结构。沟槽图案101形成在氮化硅膜7a上。基板3由玻璃材料制成。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011108944A Methods for manufacturing semiconductor film, thin film transistor and display device 审中-公开
标题翻译：制造半导体膜，薄膜晶体管和显示器件的方法
公开(公告)号：JP2011108944A
公开(公告)日：2011-06-02
申请号：JP2009264200
申请日：2009-11-19
申请人： Sony Corp , ソニー株式会社
发明人： YOSHIZAKI MAKOTO , INAGAKI TAKAO , UMETSU NOBUHIKO , NIWA KENTA
IPC分类号： H01L21/20 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L29/786 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor film, which eases non-uniformity of crystal of the semiconductor thin film and improves operation characteristics of a thin film transistor.
SOLUTION: An amorphous silicon film 15A and a photothermal conversion layer 16 are formed on a substrate 10 in this order. The amorphous silicon film 15A is irradiated with a first laser beam L1 via the photothermal conversion layer 16. Thus, a high temperature overheating region 11 is formed in the amorphous silicon film 15A. Low temperature overheating regions 12 (temperature rise region 12A and slow cooling region 12B) are formed before and behind a scanning direction of the high temperature overheating region 11 by irradiating the layer with a second laser beam L2. In the amorphous silicon film 15A, crystal growth is started by irradiation of the first laser beam L1 and the region is temperature-raised and slowly cooled by irradiation of the second laser beam L2. Thus, crystallization of the amorphous silicon film 15A gently progresses and non-uniformity of a crystal grain size is eased.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体膜的方法，其减轻了半导体薄膜的晶体的不均匀性并改善了薄膜晶体管的操作特性。解决方案：在基板10上依次形成非晶硅膜15A和光热转换层16。非晶硅膜15A经由光热转换层16被第一激光束L1照射。因此，在非晶硅膜15A中形成高温过热区域11。通过用第二激光束L2照射层，在高温过热区域11的扫描方向前后形成低温过热区域12（升温区域12A和缓慢冷却区域12B）。在非晶硅膜15A中，通过照射第一激光束L1开始晶体生长，并且通过第二激光束L2的照射使该区域升温并缓慢冷却。因此，非晶硅膜15A的结晶轻轻地进行，晶粒尺寸的不均匀性得以缓解。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008288363A Method of adjusting laser beam output, method of manufacturing semiconductor device, method of manufacturing display device, and apparatus for manufacturing semiconductor device 审中-公开
标题翻译：调整激光束输出的方法，制造半导体器件的方法，制造显示器件的方法以及制造半导体器件的装置
公开(公告)号：JP2008288363A
公开(公告)日：2008-11-27
申请号：JP2007131451
申请日：2007-05-17
申请人： Sony Corp , ソニー株式会社
发明人： UMETSU NOBUHIKO , TATSUKI KOICHI , INAGAKI TAKAO , TSUKIHARA KOICHI , MATSUNOBU TAKESHI
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To reduce intensity deviation in each laser output without being affected by a difference, such as a difference in the depth of focus in each laser beam irradiation optical system, in parallel irradiation of a plurality of laser beams.
SOLUTION: Prior to parallel irradiation of laser beams to a body to be irradiated with laser beams by a plurality of laser irradiation optical units, optical characteristics are measured in the body to be irradiated with laser beams after irradiation with laser beams by respective laser irradiation optical units. Based on the measured results, laser beam output from each laser irradiation optical unit is adjusted so that the difference in the optical characteristics for each laser irradiation optical unit is within a prescribed range.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少每个激光输出中的强度偏差，而不受诸如各激光束照射光学系统中的焦深差异的影响，并行照射多个激光束。解决方案：在通过多个激光照射光学单元将激光束平行照射到要被激光束照射的身体之前，在通过激光束照射之后，在激光束照射激光束后测量光学特性激光照射光学单元。基于测量结果，调整来自每个激光照射光学单元的激光束输出，使得每个激光照射光学单元的光学特性的差异在规定的范围内。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007305701A Thin film transistor, method for manufacturing the same and display device 有权
标题翻译：薄膜晶体管，其制造方法和显示装置
公开(公告)号：JP2007305701A
公开(公告)日：2007-11-22
申请号：JP2006131056
申请日：2006-05-10
申请人： Sony Corp , ソニー株式会社
发明人： ARAI TOSHIAKI , INAGAKI TAKAO
IPC分类号： H01L21/336 , H01L21/20 , H01L29/786 , H01L51/50
CPC分类号： H01L29/66765 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L29/78678
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor capable of suppressing nonuniformity in the characteristic of the thin film transistor without deteriorating the characteristic. SOLUTION: A crystalline silicon film 13P is formed by indirect heating processing via a photothermal conversion layer 15 and a buffer layer 14. A channel protective film is selectively formed in a region corresponding a channel region on the crystalline silicon film 13P by the patterning of the buffer layer 14 and an insulating film 16. When an n + silicon film 17 and a metallic film 18 are selectively removed, the channel protective film is functioned as an etching stopper. When the crystalline silicon film 13P is formed, heat is uniformly supplied. When etching is performed, the channel region of the crystallin silicon film 13P is protected. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够抑制薄膜晶体管的特性不均匀性而不劣化特性的薄膜晶体管的制造方法。解决方案：通过经由光热转换层15和缓冲层14的间接加热处理形成晶体硅膜13P。在对应于晶体硅膜13P上的沟道区域的区域中选择性地形成沟道保护膜，通过图案化缓冲层14和绝缘膜16.当选择性地去除n + / SP>硅膜17和金属膜18时，沟道保护膜用作蚀刻停止层。当形成结晶硅膜13P时，均匀地供应热量。当进行蚀刻时，晶状体硅膜13P的沟道区被保护。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2013122874A Photoelectric conversion element, method for manufacturing the same, electronic device, counter electrode for photoelectric conversion element, and building 审中-公开
标题翻译：光电转换元件，其制造方法，电子设备，光电转换元件的计数器电极和建筑物
公开(公告)号：JP2013122874A
公开(公告)日：2013-06-20
申请号：JP2011271222
申请日：2011-12-12
申请人： Sony Corp , ソニー株式会社
发明人： INAGAKI TAKAO , MUROYAMA MASAKAZU , MORIWAKI TOSHIKI
IPC分类号： H01M14/00 , H01L31/04 , H01M2/08
CPC分类号： Y02B10/10 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a counter electrode excellent in electrolyte resistance and conductivity, and capable of being manufactured at low cost.SOLUTION: A dye-sensitized photoelectric conversion element 10 includes an electrolyte layer 8 filled between a porous electrode 7 on which a photosensitizing dye is adsorbed, and a counter electrode 1. The counter electrode 1 for a dye-sensitized photoelectric conversion element includes a metal substrate 2, a catalyst layer 3, and a conductive diamond-like carbon film 4. The metal substrate 2 and the catalyst layer 3 are in contact with opposite sides of the conductive diamond-like carbon film 4.
摘要翻译：要解决的问题：提供耐电解性和导电性优异的反极性，并且能够以低成本制造。解决方案：染料敏化光电转换元件10包括填充在其上吸附有光敏染料的多孔电极7和对电极1之间的电解质层8.用于染料敏化光电转换元件的对电极1 包括金属基板2，催化剂层3和导电类金刚石碳膜4.金属基板2和催化剂层3与导电类金刚石碳膜4的相对侧接触。（C）2013，JPO＆INPIT

10. 发明专利

JP2009117816A Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus 审中-公开
标题翻译：制造半导体器件的方法，制造显示装置的方法，制造半导体器件的装置和显示装置
公开(公告)号：JP2009117816A
公开(公告)日：2009-05-28
申请号：JP2008265508
申请日：2008-10-14
申请人： Sony Corp , ソニー株式会社
发明人： MATSUNOBU TAKESHI , TATSUKI KOICHI , INAGAKI TAKAO , UMETSU NOBUHIKO , TSUKIHARA KOICHI
IPC分类号： H01L21/268 , H01L21/20 , H01L21/265 , H01L21/336 , H01L29/786
CPC分类号： B23K26/032 , B23K26/0006 , B23K2203/172 , B23K2203/54 , B23K2203/56 , H01L21/02691 , H01L27/1285 , H01L27/3244 , H01L51/0005 , H01L2251/5315
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of increasing throughput by reciprocating a laser beam and surely suppressing the difference between crystallinity in a forward path and that in a backward path. SOLUTION: The change of the optical characteristics of an irradiated area 61 irradiated with a laser beam and a not-irradiated area 62 in a substrate, the change of the intensity of transmission light or reflected light for instance is defined as contrast, that is ((optical characteristics of the irradiated area)-(optical characteristics of the not-irradiated area))/((optical characteristics of the irradiated area)+(optical characteristics of the not-irradiated area)). The contrast is measured for each of a first direction (forward path) and a second direction (backward path), and the irradiation power of the laser beam or the relative speed of the laser beam and the substrate is modulated so that the difference between the contrast in the first direction and the contrast in the second direction lies in a predetermined range. In a modified semiconductor film, the difference between crystallinity in the forward path and that in the backward path is surely suppressed, a TFT characteristic difference becomes small, and display unevenness of the display apparatus is suppressed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过使激光束往复运动而提高吞吐量的半导体器件的制造方法，并且可靠地抑制正向路径中的结晶度与后向路径中的结晶度之间的差异。解决方案：将衬底中用激光束和未照射区域62照射的照射区域61的光学特性的变化，例如透射光或反射光的强度的变化定义为对比度，（（照射区域的光学特性） - （未照射区域的光学特性））/（（照射区域的光学特性）+（未照射区域的光学特性））。测量第一方向（正向路径）和第二方向（反向路径）中的每一个的对比度，并且激光束的照射功率或激光束和衬底的相对速度被调制，使得第一方向的对比度和第二方向的对比度处于预定范围内。在改性半导体膜中，可靠地抑制正向路径中的结晶度与反向路径中的结晶度差，TFT特性差变小，并且抑制显示装置的显示不均匀。版权所有（C）2009，JPO＆INPIT

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