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1. 发明专利

JP2005191414A Vapor phase growth apparatus 有权
标题翻译：蒸气相生长装置
公开(公告)号：JP2005191414A
公开(公告)日：2005-07-14
申请号：JP2003433187
申请日：2003-12-26
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , ISHIHAMA YOSHIYASU
IPC分类号： C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which avoids deterioration of a susceptor rotary shaft and adverse influence due to heat transmission from a heater to a rotary driver, even when a vapor phase growth temperature is set at a high level and a large quantity of corrosive gas is used for vapor phase growth, when a gallium nitride-based compound semiconductor is manufactured.
SOLUTION: The vapor phase growth apparatus includes the susceptor rotary shaft which is made of a plurality of vertically provided constituent members. The uppermost constituent member is made of a nitride-based ceramic layer, a carbonide-based ceramic layer, a boride-based ceramic layer, or a laminate made of these ceramic layers.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种气相生长装置，其避免了基座旋转轴的劣化以及由于加热器向旋转驱动器的热传递的不利影响，即使气相生长温度设定为高当制造氮化镓基化合物半导体时，使用大量的腐蚀性气体进行气相生长。气相生长装置包括由多个垂直设置的构成部件制成的基座旋转轴。最上面的构成部件由氮化物系陶瓷层，碳化物系陶瓷层，硼化物系陶瓷层，或这些陶瓷层构成的层叠体构成。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2002261021A APPARATUS AND METHOD FOR VAPOR-PHASE GROWTH 失效
公开(公告)号：JP2002261021A
公开(公告)日：2002-09-13
申请号：JP2001053527
申请日：2001-02-28
申请人： JAPAN PIONICS , NPS KK
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for vapor-phase growth or a method of vapor-phase growth that can efficiently grow in vapor phase a semiconductor film which is uniform and has good crystallinity on a substrate, even in a case wherein the vapor-phase growth on a large-size substrate or the vapor-phase growth simultaneously on a plurality of substrates is conducted, and even in a case wherein the vapor-phase growth is conducted when the vapor-phase growth temperature is set at a high temperature, in vapor-phase growth using a lateral reaction tube. SOLUTION: This apparatus for vapor-phase growth is constituted such that a part of the reaction-tube wall that faces to the substrate is tilted downward from the upstream to the downstream of the material-gas channel. By constituting the part of the reaction-tube wall that faces to the substrate tilted downward from the upstream to the downstream of the material-gas channel, the gas is fed such that the flow of the gas is forced to be diagonally directed downward to proceed the vapor-phase growth.

3. 发明专利

JP2000315686A VAPORIZER AND VAPORIZING AND SUPPLYING METHOD 失效
公开(公告)号：JP2000315686A
公开(公告)日：2000-11-14
申请号：JP12368999
申请日：1999-04-30
申请人： JAPAN PIONICS
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , KIRIYAMA KOJI , ISHIHAMA YOSHIYASU , ASANO AKIYOSHI
IPC分类号： H01L21/31 , C23C16/44 , C23C16/448
摘要： PROBLEM TO BE SOLVED: To vaporize each liquid raw material supplied to a vaporizer at a desired concentration and a desired flow rate by heating the raw material with the central projection of a vaporizing chamber and, at the same time, by bringing the raw material into contact with a heated carrier gas turning along the internal surface of the vaporizing chamber. SOLUTION: When a zirconate titanate(ZT) film is formed on an MgO base by using two of three liquid supplying lines, the pressure between a vaporizer 1 and a CVD device is maintained at 10 Torr and a helium carrier gas heated to 250 deg.C is supplied to the vaporizer 1 heated to 250 deg.C through the carrier gas introducing port 4 of the vaporizer 1 at a flow rate of 100 ml/min. Then a liquid raw material prepared by dissolving Zr(DPM)2 contained in a liquid raw material supplier in THF solvent, and another liquid raw material prepared by dissolving Ti[OC(CH3)3]2(DPM)2 in THF solvent, are fed to a liquid flow rate control section with the pressure of a refined helium gas and supplied to the vaporizer 1 at flow rates of 0.5 cc/min.

4. 发明专利

JP2000214156A AGENT AND METHOD FOR DETECTION 失效
公开(公告)号：JP2000214156A
公开(公告)日：2000-08-04
申请号：JP1888899
申请日：1999-01-27
申请人： JAPAN PIONICS
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , ISHIHAMA YOSHIYASU , ASANO AKIYOSHI
IPC分类号： G01N31/00 , G01N31/22
摘要： PROBLEM TO BE SOLVED: To surely detect an organometallic compound in which a cyclopentadienyl ring is bonded to a metal by a method wherein a gas containing the organometallic compound in which the cyclopentadienyl ring is bonded to the metal is brought into contact with a detecting agent in which sulfuric acid is carried by an inorganic carrier, the metal is separated from the organometallic compound and the precipitation of the metal is detected. SOLUTION: A gas containing an organometallic compound in which a cyclopentadienyl ring is bonded to a metal is brought into contact with a detecting agent in which sulfuric acid is carried by an inorganic carrier. When the organometallic compound in which the cyclopentadienyl ring is bonded to the metal is brought into contact with the sulfuric acid which is carried by the inorganic carrier, the metal is separated from the organometallic compound so as to be precipitated. When the discoloration of the detecting agent during this time is detected, the organometallic compound in the gas can be detected. For example, when a gas which contains a metallocene is brought into contact with a detecting agent in which sulfuric acid is carried by white silical gel, a metal is separated from the metallocene so as to be precipitated, the metal is captured by the detecting agent, and the detecting agent is discolored sharply from a white color to a yellow color or a brown color.

5. 发明专利

JPH11335310A PURIFIED ALKOXIDE AND PURIFICATION OF ALKOXIDE 失效
公开(公告)号：JPH11335310A
公开(公告)日：1999-12-07
申请号：JP6958399
申请日：1999-03-16
申请人： JAPAN PIONICS
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , ISHIHAMA YOSHIYASU
IPC分类号： H01L21/31 , C07C29/76 , C07C29/80 , C07C31/28 , C07C31/32 , C07F7/04 , C07F7/28 , C07F9/00 , C23C16/18 , C23C16/44 , C23C16/448 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a purified alkoxide useful as a liquid CVD material used in semiconductor production processes and capable of producing high quality insulating films, and to develop a method for purifying the alkoxide. SOLUTION: This method for purifying an alkoxide comprises distilling the crude alkoxide 2, then bubbling the distilled alkoxide liquid 11 with an inert gas and simultaneously giving ultrasonic vibrations by the use of an ultrasonic vibrator 12 to strip volatile impurities such as halogens, hydrogen halides, oxygen and carbon dioxide dissolved in the alkoxide.

6. 发明专利

JP2013239579A Vapor deposition device 审中-公开
标题翻译：蒸气沉积装置
公开(公告)号：JP2013239579A
公开(公告)日：2013-11-28
申请号：JP2012111585
申请日：2012-05-15
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAHASHI YUZURU , ISHIHAMA YOSHIYASU , KODAMA YOSHIFUMI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition device in which rotation driving force is transmitted from a substrate holder rotary driver to a plurality of substrate holders each provided around a substrate holder rotary plate and having a gear in its outer periphery via the substrate holder rotary plate provided in the center of a reactor and having a gear in its outer periphery to rotate the substrate holders, the device allowing a susceptor holding the substrate holders to be easily attached to the vapor deposition device.SOLUTION: There is provided a vapor deposition device allowing a susceptor holding substrate holders to be easily attached to the vapor deposition device by rotatably holding a substrate holder rotary plate against a base in the center via bearing balls held by a bearing ball holding tool 1.
摘要翻译：要解决的问题：提供一种气相沉积装置，其中旋转驱动力从衬底保持器旋转驱动器传递到多个衬底保持器，每个衬底保持器设置在衬底保持器旋转板周围，并且经由衬底保持器在其外周具有齿轮旋转板设置在反应器的中心并且在其外周具有齿轮以旋转基板保持器，该装置允许将基板保持器保持在基板保持器上以容易地附着到气相沉积装置。解决方案：提供气相沉积通过将轴承滚珠保持工具1保持的轴承滚珠可旋转地保持基板保持器旋转板抵靠中心的基座，允许基座保持基板保持件容易地附接到蒸镀装置。

7. 发明专利

JP2010232624A Vapor phase growth apparatus for group-iii nitride semiconductor 审中-公开
标题翻译：用于III族氮化物半导体的蒸气相生长装置
公开(公告)号：JP2010232624A
公开(公告)日：2010-10-14
申请号：JP2009134165
申请日：2009-06-03
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： ISO KENJI , ISHIHAMA YOSHIYASU , TAKAGI RYOHEI , TAKAHASHI YUZURU
IPC分类号： H01L21/205 , C23C16/34 , C30B25/08 , C30B29/38 , H01L21/683
CPC分类号： C23C16/303 , C23C16/4586 , C23C16/46 , C23C16/52 , C30B25/02 , C30B29/403
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus for group-III nitride semiconductor efficiently growing high quality crystal even in the case of growing the crystal on the surfaces of multiple substrates of a large diameter held by a susceptor having a larger diameter, or in the case of growing the crystal on a substrate heated at a temperature of 1,000°C or higher, wherein the apparatus has a reaction furnace which comprises: a susceptor for holding the substrates; a surface portion of the reaction furnace facing the susceptor; a heater for heating the substrates, a raw material gas introducing part provided at the central portion of the susceptor; and a gap between the susceptor and the surface portion facing the susceptor. SOLUTION: The vapor phase growth apparatus includes such a structure in which the distance between the loaded substrates and the surface portion facing the susceptor is extremely narrow, and a coolant is flown close to the surface portion facing the susceptor to cool thereof. The vapor phase growth apparatus further includes, on the surface portion facing the susceptor, a fine porous part for ejecting an inert gas toward inside of the reactor furnace and a structure for supplying the inert gas to the fine porous part. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供有效地生长高品质晶体的III族氮化物半导体的气相生长装置，即使在由具有一个基底的基座保持的大直径的多个基板的表面上生长晶体的情况下或者在加热到1000℃以上的基板上生长晶体的情况下，其中，该装置具有反应炉，该反应炉包括：用于保持基板的基座; 所述反应炉的面向所述基座的表面部分; 用于加热基板的加热器，设置在基座的中心部分的原料气体导入部; 以及基座和面向基座的表面部分之间的间隙。气相生长装置包括这样的结构：其中加载的基板与面向基座的表面部分之间的距离非常窄，并且冷却剂在靠近基座的表面部分附近流动以冷却。气相生长装置还包括在面向基座的表面部分上的用于向反应炉内部喷射惰性气体的细孔部分和用于向惰性气体部分供给惰性气体的结构。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2002299244A VAPOR GROWTH EQUIPMENT AND VAPOR GROWTH METHOD 失效
公开(公告)号：JP2002299244A
公开(公告)日：2002-10-11
申请号：JP2001094623
申请日：2001-03-29
申请人： JAPAN PIONICS , TOKUSHIMA SANSO CO LTD
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA , SUZUKI YOSHIKI
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide vapor growth equipment or a vapor growth method which enables effectively vapor growth of a uniform semiconductor film excellent in crystallinity on a substrate, when vapor growth of a large substrate or simultaneous vapor growth of a plurality of substrates is performed, and when a vapor growth temperature is set at a high temperature and vapor growth is performed, in vapor growth using a horizontal type reaction tube. SOLUTION: The vapor growth equipment is provided with a pressurized gas inlet part in a reaction tube wall part facing a substrate. The flow rate of pressurized gas per unit area which is supplied from the inlet part to the reaction tube is set to be relatively small in the upstream part of a material gas channel and relatively large in the downstream part. Gas containing material gas is supplied to the horizontal type reaction tube of the vapor growth equipment, and the pressurized gas is supplied, thereby performing vapor growth.

9. 发明专利

JP2002110564A VAPOR-PHASE EPITAXIAL-GROWTH SYSTEM, AND METHOD THEREFOR 失效
公开(公告)号：JP2002110564A
公开(公告)日：2002-04-12
申请号：JP2000301644
申请日：2000-10-02
申请人： JAPAN PIONICS , NPS KK
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , NAOI HIROYUKI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase epitaxial-growth system and the method therefor whereby a high-quality crystal can be obtained without generating on the opposite wall of a reaction tube to a substrate the deposition of any decomposition product or reaction product even when performing the vapor- phase epitaxial-growth of the large-sized substrate, performing at the same time the ones of the plurality of substrates, or performing the one at a high temperature, in the vapor-phase epitaxial-growth using the lateral reaction tube wherein a raw-material containing gas is fed from the parallel direction with the substrate and a press-down gas is fed from the vertical direction with the substrate. SOLUTION: In the vapor-phase epitaxial-growth system, the flow-rate per unit area of a press-down gas fed from a press-down-gas introducing portion into a reaction tube is so set as to become relatively small in the central portion of the press-down-gas introducing portion and become relatively large in its peripheral portion, or is so set as to become relatively small in the middle portion of a raw-material-gas flow passage and become relatively large in both its end portions.

10. 发明专利

JPH11159464A LIQUID MATERIAL FLOW CONTROL PUMP 失效
公开(公告)号：JPH11159464A
公开(公告)日：1999-06-15
申请号：JP34418197
申请日：1997-11-28
申请人： JAPAN PIONICS
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , ISHIHAMA YOSHIYASU
IPC分类号： F04B43/08
摘要： PROBLEM TO BE SOLVED: To supply a semiconductor manufacturing CVD liquid material with high accuracy by filling an operating fluid into bellows to partition the inside of a casing, and constituting so as to suck in/deliver the liquid material by varying the volume of the bellows by sliding motion of a piston arranged in these bellows. SOLUTION: The inside of a casing 1 is partitioned into two chambers by bellows 2 having a large number of pleats, and an operating fluid 4 is sealed in an inside chamber of the bellows 2, and a piston 3 is fitted/installed. A suction side piping joint 6 enclosing a suction valve 8 communicating with an outside chamber of the bellows 2 in upper and lower parts and a delivery side piping joint 7 enclosing a delivery valve 9 actuated by a pressure difference of 1.0 to 100 kg/cm , are installed in the casing 1. A liquid material 5 can be supplied in fixed quantity by delivering this by increasing pressure by sucking the liquid material 5 in the outside chamber of the bellows 2 according to the volumetric change by reducing/expanding a shape of the bellows 2 by reciprocatively slidingly moving the piston 3 in the axial direction.

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