专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2002299243A VAPOR GROWTH EQUIPMENT AND VAPOR GROWTH METHOD 失效
公开(公告)号：JP2002299243A
公开(公告)日：2002-10-11
申请号：JP2001094610
申请日：2001-03-29
申请人： JAPAN PIONICS , TOKUSHIMA SANSO CO LTD
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide vapor growth equipment or a vapor growth method, which enables effectively vapor growth of a uniform semiconductor film excellent in crystallinity on a substrate, when vapor growth of a large substrate or simultaneous vapor growth of a plurality of substrates is performed, and when a vapor growth temperature is set at a high temperature and vapor growth is performed, in vapor growth using a horizontal type reaction tube. SOLUTION: The vapor growth equipment has a constitution where an interval between a susceptor and a reaction tube wall part facing the susceptor is narrower than an interval in the vertical direction in a reaction tube wall between a gas supplying pot of a material gas inlet part and the upper stream side end portion of a material gas channel of the susceptor. Gas containing material gas is supplied to the horizontal-type reaction tube of the vapor growth equipment, thereby performing vapor growth.

2. 发明专利

JP2002299244A VAPOR GROWTH EQUIPMENT AND VAPOR GROWTH METHOD 失效
公开(公告)号：JP2002299244A
公开(公告)日：2002-10-11
申请号：JP2001094623
申请日：2001-03-29
申请人： JAPAN PIONICS , TOKUSHIMA SANSO CO LTD
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA , SUZUKI YOSHIKI
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide vapor growth equipment or a vapor growth method which enables effectively vapor growth of a uniform semiconductor film excellent in crystallinity on a substrate, when vapor growth of a large substrate or simultaneous vapor growth of a plurality of substrates is performed, and when a vapor growth temperature is set at a high temperature and vapor growth is performed, in vapor growth using a horizontal type reaction tube. SOLUTION: The vapor growth equipment is provided with a pressurized gas inlet part in a reaction tube wall part facing a substrate. The flow rate of pressurized gas per unit area which is supplied from the inlet part to the reaction tube is set to be relatively small in the upstream part of a material gas channel and relatively large in the downstream part. Gas containing material gas is supplied to the horizontal type reaction tube of the vapor growth equipment, and the pressurized gas is supplied, thereby performing vapor growth.

3. 发明专利

JP2002371361A Apparatus and method for vapor phase epitaxy 审中-公开
标题翻译：蒸气相外观的装置和方法
公开(公告)号：JP2002371361A
公开(公告)日：2002-12-26
申请号：JP2001182854
申请日：2001-06-18
申请人： Japan Pionics Co Ltd , Tokushima Sanso Co Ltd , 徳島酸素工業株式会社 , 日本パイオニクス株式会社
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , KOMIYA YOSHINAO , KUREHA REIJI , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA , SUZUKI YOSHIKI , SASAKI KOJI
IPC分类号： H01L21/20 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01J37/32 , H01L21/205 , H01L33/32 , H01L33/58 , H01S5/323
CPC分类号： C23C16/45565 , C23C16/45587 , C30B25/02 , C30B25/14 , C30B29/406 , H01J37/3244
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for vapor phase epitaxy, which can effectively grow a uniform semiconductor film having adequate crystallinity on a substrate through vapor phase epitaxy, both when performing vapor phase epitaxy on a large-scale substrate or simultaneously on several substrates, and when performing the vapor phase epitaxy set at high temperature, in a vapor phase epitaxy with the use of a horizontal type reaction tube.
SOLUTION: The apparatus for vapor phase epitaxy comprises a press- down-gas introducing portion on a wall part of a reaction tube facing to the substrate, and that at least one part of an upstream part in the source gas channel of the press-down-gas introducing portion feeds the press-down gas toward a downstream direction of the source gas channel, in an obliquely lower direction or in a horizontal direction. The method for vapor phase epitaxy includes feeding the press-down gas as well as feeding gas containing the source gas, into the above horizontal type reaction tube of the apparatus for vapor phase epitaxy.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于气相外延的装置和方法，其可以通过气相外延在衬底上有效地生长具有足够结晶度的均匀的半导体膜，当在大尺寸衬底上同时进行气相外延在多个基板上，并且当在高温下进行气相外延时，在使用卧式反应管的气相外延中。解决方案：用于气相外延的装置包括在面向基板的反应管的壁部分上的压下气体引入部分，并且压下源气体通道中的上游部分的至少一部分气体引入部分沿着倾斜的下方向或水平方向朝向源气体通道的下游方向供给压下气体。气相外延的方法包括将压下的气体以及将含有源气体的气体供给到用于气相外延的装置的上述卧式反应管中。

4. 发明专利

JP2004071849A Vaporizing/supplying apparatus and vaporizing/ supplying method 有权
公开(公告)号：JP2004071849A
公开(公告)日：2004-03-04
申请号：JP2002229464
申请日：2002-08-07
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , IWATA MITSUHIRO , MORI YUJI , KIRIYAMA KOJI , ASANO AKIYOSHI
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vaporizing/supplying apparatus and a vaporizing/supplying method wherein in formation of ferroelectric films such as PZT, BST, SBT, and PLZT, vaporization is effectively achieved with one vaporizer without causing deterioration of each CVD stock material and adhesion of solid matter, and vaporized gas is supplied to a semiconductor manufacturing apparatus to ensure a high quality high purity semiconductor film.
SOLUTION: The vaporizing/supplying apparatus comprising a plurality of CVD stock material supply lines including a fluid flow rate control section, means for mixing a plurality of kinds of CVD stock materials supplied from the CVD stock material supply lines, a filter for filtrating a mixed CVD stock material, a vaporizer for vaporizing the filtrated mixed CVD stock material, and a filter for filtrating vaporized gas of the mixed CVD stock material. The vaporizing/supplying apparatus is used for vaporized gas supply.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2013074078A Cleaning device and cleaning method for component of vapor deposition device 审中-公开
标题翻译：清洗装置和清洗方法用于蒸发沉积装置的组分
公开(公告)号：JP2013074078A
公开(公告)日：2013-04-22
申请号：JP2011211714
申请日：2011-09-28
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： AKIYAMA TOSHIO , MORI YUJI
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： B08B5/02 , C23C16/4405
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device, along with a cleaning method, for a component of a vapor deposition device incorporating a susceptor that holds, for free rotation, a plurality of substrate holders by way of a rotary mechanism with bearing, capable of efficiently removing deposits or sticking substance that sticks to a vapor deposition device component such as a substrate holder and a susceptor after vapor deposition.SOLUTION: The cleaning device includes a housing part for a susceptor and a substrate holder, means for rotating a susceptor and/or means for rotating a substrate holder, a heater, a cleaning gas introduction part, and a cleaning gas exhausting part. The susceptor which holds the substrate holder having been used for vapor deposition is stored in the cleaning device, and the susceptor and/or the substrate holder is rotated and cleaning gas is introduced to remove deposits or sticking substance that sticks to at the time of vapor deposition.
摘要翻译：要解决的问题：为了提供清洁装置以及清洁方法，用于包括基座的气相沉积装置的部件，所述基座通过旋转机构自由旋转地保持多个基板保持器，所述旋转机构具有轴承，能够有效地去除气相沉积后粘附到诸如基板保持器和基座的气相沉积装置部件的沉积物或粘附物质。解决方案：清洁装置包括用于基座和基板保持器的壳体部分，用于旋转基座的装置和/或用于旋转衬底保持器的装置，加热器，清洁气体引入部分和清洁气体排出部分。保持已经用于气相沉积的衬底保持器的基座被存储在清洁装置中，并且基座和/或衬底保持器旋转，并且引入清洁气体以去除蒸气时粘附的沉积物或粘附物质沉积版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2003332327A Gasification supply method 审中-公开
标题翻译：气化供应方法
公开(公告)号：JP2003332327A
公开(公告)日：2003-11-21
申请号：JP2002141386
申请日：2002-05-16
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , YONEYAMA GAKUO , MORI YUJI , ASANO AKIYOSHI
IPC分类号： C23C16/18 , C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a gasification supply method which can supply a liquid CVD raw material used in manufacturing of a barrier film by gasification at an extremely high concentration and a desired supply amount stably to a semiconductor manufacturing device. SOLUTION: Amino liquid CVD raw material is heated and gasified at high accuracy and supplied to a gas mass flow controller. Its flow rate is controlled by the gas mass flow controller and is supplied to the semiconductor manufacturing device, without carrying a carrier gas such as nitrogen, helium and argon. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种气化供给方法，其可以通过以极高的浓度气化和期望的供给量向半导体制造装置稳定地供给用于制造阻挡膜的液体CVD原料。解决方案：氨基液体CVD原料以高精度加热和气化，并供给气体质量流量控制器。其流量由气体质量流量控制器控制，并且被供给到半导体制造装置，而不携带诸如氮气，氦气和氩气的载气。版权所有（C）2004，JPO

7. 发明专利

JP2015059242A 気相成長装置审中-公开
标题翻译：蒸气生长装置
公开(公告)号：JP2015059242A
公开(公告)日：2015-03-30
申请号：JP2013193612
申请日：2013-09-19
申请人：日本パイオニクス株式会社 , Japan Pionics Co Ltd
发明人： SUZUKI MASATOSHI , MORI YUJI , ONCHI SHINTARO
IPC分类号： C23C16/46 , H01L21/205
摘要：【課題】サセプタによって回転自在に保持された複数の基板を、基板の裏側から所定の線形パターンで形成されたヒータにより加熱する構造を有するフェイスダウン型の気相成長装置であって、大きな基板を複数枚用いた気相成長においても、広い面積を有するヒータを熱膨張による破損をさせることなく安定して支持することが可能な気相成長装置を提供する。【解決手段】前述のような気相成長装置において、ヒータの上面側に穴加工が施された反射板を設置し、前記反射板の穴及びヒータの線形パターンの間隙を貫通するヒータ支持部材を、反射板及びヒータに固定せずに設けて、ヒータを水平方向に可動な状態で反射板から吊り下げて支持する構成とする。【選択図】図1
摘要翻译：要解决的问题：提供一种气相生长装置，其中具有大面积的加热器由于在使用多个大的基板的气相生长中的热膨胀而不会破裂，在具有多个结构的面向下型气相生长装置中由基座可旋转地保持的基板通过由预定图案形成的加热器从背面被加热。解决方案：在上述气相生长装置中，反射板在加热器上表面侧具有钻孔。提供通过反射板中的孔和加热器的线图案的间隙的加热器支撑构件而不固定在反射器或加热器上，使得加热器以可移动状态从反射板悬挂在水平方向。

8. 发明专利

JP2013115281A Vapor phase growth apparatus 审中-公开
标题翻译：蒸气相生长装置
公开(公告)号：JP2013115281A
公开(公告)日：2013-06-10
申请号：JP2011261141
申请日：2011-11-30
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAHASHI YUZURU , MORI YUJI , NAKAOKA KENKICHI
IPC分类号： H01L21/205 , C23C16/46
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus including a heater for heating a substrate and a current introduction terminal for electrifying the heater, in which thermal diffusion from the current introduction terminal to the outside of the vapor phase growth apparatus can be suppressed effectively.SOLUTION: The vapor phase growth apparatus is configured so that a flow path of refrigerant is provided in a current introduction terminal, and the refrigerant can come into contact with the current introduction terminal body. In addition to the flow path of refrigerant, a cooling container through which the refrigerant flows is provided preferably between the sidewall and the current introduction terminal and/or between the current introduction terminals.
摘要翻译：要解决的问题：提供一种气相生长装置，其包括用于加热基板的加热器和用于使加热器通电的电流引入端子，其中从引流端子到气相生长装置的外部的热扩散可以有效地抑制。＆lt; P＆gt;解决方案：气相生长装置被构造成使得在导流端子中设置制冷剂的流动路径，并且制冷剂可以与引入端子体接触。除了制冷剂的流动路径之外，制冷剂流过的冷却容器优选地设置在侧壁和导电端子之间和/或电流引入端子之间。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2004063843A Apparatus and method for supplying vaporization 审中-公开
公开(公告)号：JP2004063843A
公开(公告)日：2004-02-26
申请号：JP2002220882
申请日：2002-07-30
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： TAKAMATSU YUKICHI , TONARI KAZUAKI , IWATA MITSUHIRO , MORI YUJI , KIRIYAMA KOJI , ASANO AKIYOSHI
IPC分类号： C23C16/448 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for supplying vaporization, which obtains high quality and high-purity semiconductor film, by efficiently performing vaporization with a single vaporizer for supply to a semiconductor manufacturing device, without causing deterioration in individual CVD materials or attachment of solid materials in formation of a ferroelectric film such as BZT, BST, SBT, PLZT or the like.
SOLUTION: The apparatus for supplying vaporization consists of a plurality of CVD material supply lines, each having a liquid flow rate control unit; a means for mixing the plural kinds of CVD materials supplied from these CVD material supply lines; a filter for filtering the mixed CVD materials; and the vaporizer, in which a CVD material supply part is at least incorporated with a first channel for flowing the CVD materials, a second channel for flowing a carrier gas and a third channel for converging the CVD materials and the carrier gas from the two channels and injecting the same to a vaporization chamber. Supplying of vaporization is performed by using the apparatus.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2002261021A APPARATUS AND METHOD FOR VAPOR-PHASE GROWTH 失效
公开(公告)号：JP2002261021A
公开(公告)日：2002-09-13
申请号：JP2001053527
申请日：2001-02-28
申请人： JAPAN PIONICS , NPS KK
发明人： SAKAI SHIRO , TAKAMATSU YUKICHI , MORI YUJI , WAN HON SHIN , ISHIHAMA YOSHIYASU , AMISHIMA YUTAKA
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for vapor-phase growth or a method of vapor-phase growth that can efficiently grow in vapor phase a semiconductor film which is uniform and has good crystallinity on a substrate, even in a case wherein the vapor-phase growth on a large-size substrate or the vapor-phase growth simultaneously on a plurality of substrates is conducted, and even in a case wherein the vapor-phase growth is conducted when the vapor-phase growth temperature is set at a high temperature, in vapor-phase growth using a lateral reaction tube. SOLUTION: This apparatus for vapor-phase growth is constituted such that a part of the reaction-tube wall that faces to the substrate is tilted downward from the upstream to the downstream of the material-gas channel. By constituting the part of the reaction-tube wall that faces to the substrate tilted downward from the upstream to the downstream of the material-gas channel, the gas is fed such that the flow of the gas is forced to be diagonally directed downward to proceed the vapor-phase growth.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式