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1. 发明专利

JP2011018895A Vapor-phase growth apparatus for group-iii nitride semiconductor 审中-公开
标题翻译：用于III族氮化物半导体的蒸气相生长装置
公开(公告)号：JP2011018895A
公开(公告)日：2011-01-27
申请号：JP2010130040
申请日：2010-06-07
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： ISO KENJI , ISHIHAMA YOSHIYASU , TAKAGI RYOHEI , TAKAHASHI YUZURU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C23C16/301 , C23C16/45512 , C23C16/45572 , C23C16/45574 , C23C16/4584 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To improve a film thickness distribution uniformity of a semiconductor and a reaction rate in a vapor-phase growth apparatus for group-III nitride semiconductors, wherein the apparatus includes a susceptor for holding a plurality of substrates, a heater for heating a wall facing the susceptor and the substrates, a reactor formed of a gap between the susceptor and the wall facing the susceptor, a raw material gas introducing part for supplying a raw material gas to the reactor, and a reaction gas exhausting part.SOLUTION: The raw material introducing part of the vapor-phase growth apparatus for group-III nitride semiconductors includes a first mixed-gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an optional ratio, and a second mixed-gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an optional ratio.
摘要翻译：要解决的问题：为了提高III族氮化物半导体的气相生长装置中半导体的膜厚分布均匀性和反应速度，其中该装置包括用于保持多个基板的基座，用于加热的加热器面对基座和基板的壁，由基座和面向基座的壁之间的间隙形成的反应器，用于向反应器供应原料气体的原料气体导入部以及反应气体排出部。解决方案：用于III族氮化物半导体的气相生长装置的原料引入部分包括能够喷射通过混合三种即氨，有机金属化合物和载气的混合气体的第一混合气体喷射孔以及能够喷射通过混合选自氨的两种或三种获得的混合气体的第二混合气体喷射孔，所述有机金属c 以及任选比例的载气。

2. 发明专利

JP2011155046A Vapor phase growth apparatus for group iii nitride semiconductor 有权
标题翻译：用于III类氮化物半导体的蒸气相生长装置
公开(公告)号：JP2011155046A
公开(公告)日：2011-08-11
申请号：JP2010014166
申请日：2010-01-26
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： ISO KENJI , ISHIHAMA YOSHIYASU , TAKAGI RYOHEI , TAKAHASHI YUZURU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B29/403 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus that ejects a material gas at an equal flow rate for any angle, and suppresses the decomposition and crystallization of the material gas on the opposite face of a susceptor.
SOLUTION: The vapor phase growth apparatus is configured as follows. The structure of the opposite face of a susceptor 2 internally has a device for circulating a coolant. A material-gas introducing portion includes a plurality of gas ejection orifices 13 respectively vertically partitioned by each disk-shaped partition 12, 12". At least one of the gas ejection orifices 13 is circumferentially partitioned by a plurality of columnar partitions 14.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长装置，以相同的流量喷射任何角度的材料气体，并抑制原料气体在基座的相对面上的分解和结晶。
解决方案：气相生长装置如下构成。基座2的相对面的结构内部具有用于使冷却剂循环的装置。材料气体导入部具有由各圆盘状隔板12,12“分别垂直分隔的多个气体喷出口13，气体喷射孔13中的至少一个通过多个柱状隔板14周向隔开。
版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010219225A Vapor growth apparatus of group iii nitride semiconductor 审中-公开
标题翻译： III类氮化物半导体的蒸气生长装置
公开(公告)号：JP2010219225A
公开(公告)日：2010-09-30
申请号：JP2009063135
申请日：2009-03-16
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： ISO KENJI , ISHIHAMA YOSHIYASU , TAKAGI RYOHEI , TAKAHASHI YUZURU
IPC分类号： H01L21/205 , C23C16/458 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a vapor growth apparatus of a group III nitride semiconductor which can prevent a crack of a substrate even in a case of vapor growth of a substrate with a diameter of three inches or larger. SOLUTION: The vapor growth apparatus of a face down type group III nitride semiconductor includes a susceptor for holding the substrate with a down-turned crystal growth surface, an opposite face of the susceptor, a heater for heating the substrate, a material gas introducing part arranged in a center part of the susceptor, a reaction furnace formed of a gap between the susceptor and the opposite face of the susceptor, and a reaction gas discharge part arranged on an outer circumference side of the susceptor. The susceptor 2 includes four or more claws 10 for one substrate holder 8. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供即使在直径为三英寸以上的基板的气相生长的情况下也能够防止基板的裂纹的III族氮化物半导体的气相生长装置。解决方案：面朝下型III族氮化物半导体的气相生长装置包括用于保持具有向下转动的晶体生长表面的基板的基座，基座的相对面，用于加热基板的加热器，材料设置在基座的中心部的气体导入部，由基座与基座的相对面之间的间隙形成的反应炉，以及设置在基座的外周侧的反应气体排出部。基座2包括用于一个基板支架8的四个或更多个爪10.版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010232624A Vapor phase growth apparatus for group-iii nitride semiconductor 审中-公开
标题翻译：用于III族氮化物半导体的蒸气相生长装置
公开(公告)号：JP2010232624A
公开(公告)日：2010-10-14
申请号：JP2009134165
申请日：2009-06-03
申请人： Japan Pionics Co Ltd , 日本パイオニクス株式会社
发明人： ISO KENJI , ISHIHAMA YOSHIYASU , TAKAGI RYOHEI , TAKAHASHI YUZURU
IPC分类号： H01L21/205 , C23C16/34 , C30B25/08 , C30B29/38 , H01L21/683
CPC分类号： C23C16/303 , C23C16/4586 , C23C16/46 , C23C16/52 , C30B25/02 , C30B29/403
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus for group-III nitride semiconductor efficiently growing high quality crystal even in the case of growing the crystal on the surfaces of multiple substrates of a large diameter held by a susceptor having a larger diameter, or in the case of growing the crystal on a substrate heated at a temperature of 1,000°C or higher, wherein the apparatus has a reaction furnace which comprises: a susceptor for holding the substrates; a surface portion of the reaction furnace facing the susceptor; a heater for heating the substrates, a raw material gas introducing part provided at the central portion of the susceptor; and a gap between the susceptor and the surface portion facing the susceptor. SOLUTION: The vapor phase growth apparatus includes such a structure in which the distance between the loaded substrates and the surface portion facing the susceptor is extremely narrow, and a coolant is flown close to the surface portion facing the susceptor to cool thereof. The vapor phase growth apparatus further includes, on the surface portion facing the susceptor, a fine porous part for ejecting an inert gas toward inside of the reactor furnace and a structure for supplying the inert gas to the fine porous part. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供有效地生长高品质晶体的III族氮化物半导体的气相生长装置，即使在由具有一个基底的基座保持的大直径的多个基板的表面上生长晶体的情况下或者在加热到1000℃以上的基板上生长晶体的情况下，其中，该装置具有反应炉，该反应炉包括：用于保持基板的基座; 所述反应炉的面向所述基座的表面部分; 用于加热基板的加热器，设置在基座的中心部分的原料气体导入部; 以及基座和面向基座的表面部分之间的间隙。气相生长装置包括这样的结构：其中加载的基板与面向基座的表面部分之间的距离非常窄，并且冷却剂在靠近基座的表面部分附近流动以冷却。气相生长装置还包括在面向基座的表面部分上的用于向反应炉内部喷射惰性气体的细孔部分和用于向惰性气体部分供给惰性气体的结构。版权所有（C）2011，JPO＆INPIT

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