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1. 发明专利

JPH03196120A OPTICAL MODULATOR 失效
公开(公告)号：JPH03196120A
公开(公告)日：1991-08-27
申请号：JP32341390
申请日：1990-11-28
申请人： IBM
发明人： POORU GURAHAMU MEI , SABURAMANIAN SURIKANTESUWARA I
IPC分类号： G02F1/015 , G02F1/025 , G02F1/21
摘要： PURPOSE: To embody an opto-electronic modulator for a silicon base integrated device including a silicon waveguide region and adjacent insulators regions by further including a third region contg. silicon adjacent to a first region having electric conductivity of a second type forming a p-n junction with the first region. CONSTITUTION: The modulator includes the third region 38 which contains the silicon and is disposed adjacently to the first region 36. The third region 38 has the electric conductivity of the second type in order to form the p-n junction 38a with the first region 36. Charge carriers are implanted into the first region 36 in order to change the refractive index and the light transparent characteristic of the waveguide region changes. The modulator is suitable for production together with the silicon base integrated circuit for modulating the radiation obtd. by an external source, such as semiconductor laser. As a result, the opto-electric modulator for the silicon base integrated device including the silicon waveguide region and the insulator regions adjacent thereto is obtd.

2. 发明专利

JPH0298028A PHOTOELECTRON GENERATOR 失效
公开(公告)号：JPH0298028A
公开(公告)日：1990-04-10
申请号：JP15598089
申请日：1989-06-20
申请人： IBM
发明人： JIIINNMAAKU HAARUBOOTO , POORU GURAHAMU MEI
IPC分类号： G02B6/36 , G02B6/42 , H01J1/34 , H01J1/35 , H01J37/073
摘要： PURPOSE: To provide a photoelectron generation device as small as sub-micron unit by introducing light of high intensity to one end of an optical fiber having a fiber core surrounded with a clad part, and positioning a conductor having the specified work function at the other end of the fiber. CONSTITUTION: An optical fiber 1 has a core part 2 laid so as to cross the front 5 thereof and at the same time, surrounded with a clad structure including a photoelectron emission cathode material 4 of environmental resistance in contact. Light of high intensity having photon energy slightly exceeding the work function of the cathode material 4 is introduced from a laser or the like to the optical fiber core part 2 as shown by an arrow 6. When extracted electric field exists between the emission part 8 of the cathode material 4 and an anode 9 with an opening 10 under this condition, a very bright and narrow beam 11 of electrons emitted from the photoelectrons appears. Thus, a photoelectron generation device as small as a sub-micron unit can be formed.

3. 发明专利

JPH03211782A MILLIMETER WAVE RADIATION GENERATOR 失效
公开(公告)号：JPH03211782A
公开(公告)日：1991-09-17
申请号：JP31013390
申请日：1990-11-15
申请人： IBM
发明人： POORU GURAHAMU MEI
IPC分类号： H01S1/00 , H03B11/00 , H03B11/10 , H03B17/00
摘要： PURPOSE: To obtain a device which works as a point-shaped radiation source for an efficient millimeter wave radiation, by a method wherein a coplanar transmission line structure which generates a millimeter wave radiation radiated toward the interior of a substrate, is adopted. CONSTITUTION: A pair of metallic lines 10 and 12 are formed on the surface of a polycrystalline material layer 14 subjected to a damage treatment. The layer 14 is one formed on the upper surface of a proper substrate 16, such as a sapphire substrate, and a bias is properly applied to the transmission lines 10 and 12 by a DC power supply 18. By adopting a transmission line structure which performs a resonance, an electromagnetic field intensity within a resonance cavity is high. Therefore, a large radiation of a millimeter wave is generated in a specified wavelength, that is, in the state corresponding to a specified transmission line length. An exit angle is set by the ratio of the traveling speed of an electrical pulse to the phase velocity of this radiation in the interior of the substrate. By selecting properly the material for the substrate and the thickness of the substrate, a waveguide can be formed.

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