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    • 8. 发明专利
    • Optical semiconductor device, manufacturing method of the same, base substrate and reflector mold used for manufacturing the same
    • 光学半导体器件,其制造方法,用于制造它们的基底和反射器模具
    • JP2014022651A
    • 2014-02-03
    • JP2012161790
    • 2012-07-20
    • Hitachi Chemical Co Ltd日立化成株式会社
    • TONAI TOMOKOTAKANE NOBUAKIYAMAURA ITARUINADA MAKI
    • H01L33/60
    • H01L2224/48091H01L2224/73265H01L2224/8592H01L2924/00014
    • PROBLEM TO BE SOLVED: To provide an optical semiconductor device which can inhibit sulfidation of a silver plating layer, and provide a manufacturing method of the optical semiconductor device, a base substrate and a reflector mold used of manufacturing of the optical semiconductor device.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 on which a silver plating layer 14 is formed on a surface; a blue LED 30 bonded on the silver plating layer 14; a reflector 20 arranged on the substrate 10 at a position to surround the blue LED 30; a transparent encapsulation resin 40 filled in the reflector 20 for encapsulating the blue LED 30; and a mica film 50 which covers the silver plating layer 10. A thickness of the mica film is not less than 0.005 μm and not more than 500 μm. Because in this optical semiconductor device 1A, the silver plating layer 14 is covered with the mica film 50 and the film thickness d of the mica film 50 is within a range of not less than 0.005 μm and not more than 500 μm, sulfidation of the silver plating layer 14 can be inhibited to a practically sufficient degree. Accordingly, decrease in illumination intensity of the optical semiconductor device 1A caused by blackening of the silver plating layer 14 is inhibited.
    • 要解决的问题:提供一种可以抑制镀银层的硫化的光半导体装置,并提供用于制造光半导体装置的光半导体装置,基底基板和反射器模具的制造方法。解决方案: 光学半导体装置1A包括:表面上形成有银镀层14的基板10; 结合在镀银层14上的蓝色LED30; 在围绕蓝色LED 30的位置处布置在基板10上的反射器20; 填充在用于封装蓝色LED 30的反射器20中的透明封装树脂40; 和覆盖镀银层10的云母膜50.云母膜的厚度为0.005μm以上500μm以下。 由于在该光半导体装置1A中,由云母膜50覆盖银镀层14,云母膜50的膜厚d在0.005μm以上且500μm以下的范围内,因此, 可以将镀银层14抑制到足够的程度。 因此,抑制了由镀银层14的黑化引起的光半导体装置1A的照明强度的降低。
    • 10. 发明专利
    • Light control film and conductive film for light control film
    • 光控薄膜和导光膜
    • JP2013164566A
    • 2013-08-22
    • JP2012028970
    • 2012-02-13
    • Hitachi Chemical Co Ltd日立化成株式会社
    • NOMURA MICHIYUKIHABA EISUKEYAMAURA ITARUMORISHITA YOSHII
    • G02F1/19B32B7/02B32B27/00
    • PROBLEM TO BE SOLVED: To provide a light control film having a conductive layer that has excellent radio wave transmission properties and suppresses in-plane surface resistivity variation, and a conductive film for light control film.SOLUTION: A light control film includes a light control layer held between respective conductive layers of two sheets of conductive resin base materials so that the respective conductive layers face each other. The conductive resin base material includes a resin base material, and a conductive layer having carbon nano-tube with its average length of 1 μm or more and 0.5 mm or less and average thickness of 1 nm or more and 20 nm or less. The light control layer includes a resin matrix and a light adjustment suspension dispersed in the resin matrix.
    • 要解决的问题:提供一种具有优异的无线电波透射性和抑制面内电阻率变化的导电层的光控制膜和用于光控膜的导电膜。解决方案:光控膜包括光控制 层叠在两片导电性树脂基材的各导电层之间,使各导电层彼此面对。 导电性树脂基材包括树脂基材和具有平均长度为1μm以上且0.5mm以下,平均厚度为1nm以上且20nm以下的碳纳米管的导电层。 光控制层包括分散在树脂基体中的树脂基质和调光悬浮液。