专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014159619A Surface treatment agent for silver or silver alloy, light-reflecting substrate, light emitting device and method of producing light emitting device 有权
标题翻译：银或银合金表面处理剂，光反射基板，发光装置及其制造发光装置的方法
公开(公告)号：JP2014159619A
公开(公告)日：2014-09-04
申请号：JP2013031177
申请日：2013-02-20
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： C23C26/00 , C23C28/00 , H01L33/56 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment agent having excellent discoloration (corrosion) prevention properties for various kinds of silver or silver alloys, for example, silver or silver alloys used for an electronic component and a lighting device such as a light-emitting diode and, particularly, capable of imparting excellent discoloration resistance to a silver plated surface.SOLUTION: A surface treatment agent for silver or silver alloys comprises liquid A comprising a metallic compound with a hydrolyzable group, and liquid B comprising a laminar silicate compound.
摘要翻译：要解决的问题：为了提供对于各种银或银合金具有优异的变色（防腐蚀）性能的表面处理剂，例如用于电子部件的银或银合金和诸如发光的照明装置二极管，特别是能够赋予镀银表面优异的耐变色性。溶液：银或银合金的表面处理剂包括含有可水解基团的金属化合物的液体A和包含层状硅酸盐化合物的液体B.

2. 发明专利

JP2014022651A Optical semiconductor device, manufacturing method of the same, base substrate and reflector mold used for manufacturing the same 有权
标题翻译：光学半导体器件，其制造方法，用于制造它们的基底和反射器模具
公开(公告)号：JP2014022651A
公开(公告)日：2014-02-03
申请号：JP2012161790
申请日：2012-07-20
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI
IPC分类号： H01L33/60
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which can inhibit sulfidation of a silver plating layer, and provide a manufacturing method of the optical semiconductor device, a base substrate and a reflector mold used of manufacturing of the optical semiconductor device.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 on which a silver plating layer 14 is formed on a surface; a blue LED 30 bonded on the silver plating layer 14; a reflector 20 arranged on the substrate 10 at a position to surround the blue LED 30; a transparent encapsulation resin 40 filled in the reflector 20 for encapsulating the blue LED 30; and a mica film 50 which covers the silver plating layer 10. A thickness of the mica film is not less than 0.005 μm and not more than 500 μm. Because in this optical semiconductor device 1A, the silver plating layer 14 is covered with the mica film 50 and the film thickness d of the mica film 50 is within a range of not less than 0.005 μm and not more than 500 μm, sulfidation of the silver plating layer 14 can be inhibited to a practically sufficient degree. Accordingly, decrease in illumination intensity of the optical semiconductor device 1A caused by blackening of the silver plating layer 14 is inhibited.
摘要翻译：要解决的问题：提供一种可以抑制镀银层的硫化的光半导体装置，并提供用于制造光半导体装置的光半导体装置，基底基板和反射器模具的制造方法。解决方案：光学半导体装置1A包括：表面上形成有银镀层14的基板10; 结合在镀银层14上的蓝色LED30; 在围绕蓝色LED 30的位置处布置在基板10上的反射器20; 填充在用于封装蓝色LED 30的反射器20中的透明封装树脂40; 和覆盖镀银层10的云母膜50.云母膜的厚度为0.005μm以上500μm以下。由于在该光半导体装置1A中，由云母膜50覆盖银镀层14，云母膜50的膜厚d在0.005μm以上且500μm以下的范围内，因此，可以将镀银层14抑制到足够的程度。因此，抑制了由镀银层14的黑化引起的光半导体装置1A的照明强度的降低。

3. 发明专利

JP2014109042A Silver sulfurization preventive material, method for forming silver sulfurization preventive film, and method for producing light-emitting device 有权
标题翻译：银硫化预防材料，形成银硫化预防膜的方法，以及用于生产发光装置的方法
公开(公告)号：JP2014109042A
公开(公告)日：2014-06-12
申请号：JP2012262754
申请日：2012-11-30
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： C23F11/00 , C25D7/08 , H01L33/52 , H01L33/60
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a silver sulfurization preventive material capable of sufficiently suppressing the sulfurization of silver, a method for forming a silver sulfurization preventive film using the same, and a method for producing a light-emitting device having excellent sulfurization resistance.SOLUTION: The silver sulfurization preventive material comprises two or more kinds of clays, preferably, two or more kinds of clays with different aspect ratios. The method for forming a silver sulfurization preventive film comprises: a coating step of coating the surface of a silver-containing metal layer with the silver sulfurization preventive material to form a coating film of the silver sulfurization preventive material; and a drying step of drying the coating film.
摘要翻译：要解决的问题：提供能够充分抑制银硫化的银防止硫化物质，使用其形成银防止硫化膜的方法，以及具有优异耐硫化性的发光元件的制造方法。银防止硫化物质包含两种以上粘土，优选两种以上不同长径比的粘土。形成银防硫膜的方法包括：涂覆步骤，用银防止硫化物质涂覆含银金属层的表面，形成银防止硫化材料的涂膜; 和干燥步骤，干燥该涂膜。

4. 发明专利

JP2014019927A Discoloration inhibitor for silver, method for producing discoloration inhibitor film for silver, method for producing light-emitting device and light-emitting device 有权
标题翻译：用于银的防腐蚀抑制剂，用于生产银的消除抑制剂膜的方法，用于生产发光装置的方法和发光装置
公开(公告)号：JP2014019927A
公开(公告)日：2014-02-03
申请号：JP2012161802
申请日：2012-07-20
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： YAMAURA ITARU , TONAI TOMOKO , INADA MAKI , TAKANE NOBUAKI
IPC分类号： C23C26/00 , C09K3/00
摘要： PROBLEM TO BE SOLVED: To provide a discoloration inhibitor for silver that may suppress the discoloration of silver sufficiently and a method for producing a discoloration inhibitor film for silver, a method for producing a light-emitting device superior in inhibition of the discoloration of silver and a light-emitting device using the same.SOLUTION: A discoloration inhibitor for silver comprises a clay and an ion exchanger and the mass ratio of the clay and the ion exchanger is preferably 95/5 to 70/30. A method for producing a discoloration inhibitor film for silver comprises an application step for applying the discoloration inhibitor for silver on a surface of a metal layer 16 containing silver to form a coating film 50 of the discoloration inhibitor for silver and a drying step for drying the coating film.
摘要翻译：要解决的问题：提供可以抑制银充分变色的银色变色抑制剂和用于制备银色变色抑制剂膜的方法，一种抑制银变色性优异的发光装置的制造方法和使用其的发光装置。解决方案：银的变色抑制剂包括粘土和离子交换剂，粘土和离子交换剂的质量比优选为95/5〜70/30。制造银变色抑制剂膜的方法包括将银的变色抑制剂涂覆在含银金属层16的表面上的涂布步骤，以形成银的变色抑制剂的涂膜50和干燥步骤涂膜。

5. 发明专利

JP2017083293A 分離材及びその製造方法审中-公开
公开(公告)号：JP2017083293A
公开(公告)日：2017-05-18
申请号：JP2015211687
申请日：2015-10-28
申请人：日立化成株式会社 , Hitachi Chemical Co Ltd
发明人： WATANABE MASARU , TONAI TOMOKO , KAWACHI FUMIHIKO , GOTO YASUSHI , BUTSUGAN MICHIO
IPC分类号： G01N30/88 , B01J20/26 , B01J20/28 , B01J20/32
摘要：【課題】標的分子を分離するために用いられる分離材に関して、標的分子の吸着量及び吸着選択性を更に向上させること。【解決手段】架橋ポリマーを含む多孔質ポリマー粒子と、多孔質ポリマーの表面上に設けられた、インプリント用ポリマーを含み分子インプリント法による鋳型を形成している分子鋳型膜と、を有する分離材が開示される。【選択図】なし

6. 发明专利

JP2014159618A Surface treatment agent for silver or silver alloy, light-reflecting substrate, light emitting device and method of producing light emitting device 有权
标题翻译：银或银合金表面处理剂，光反射基板，发光装置及其制造发光装置的方法
公开(公告)号：JP2014159618A
公开(公告)日：2014-09-04
申请号：JP2013031174
申请日：2013-02-20
申请人： Hitachi Chemical Co Ltd , 日立化成株式会社
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： C23C28/00 , C01B33/32 , C01B33/38 , C09D1/02 , C09D5/08 , C09D7/12 , C09D201/02 , C23C26/00 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment agent having excellent discoloration (corrosion) prevention properties for various kinds of silver or silver alloys, for example, silver or silver alloys used for an electronic component and a lighting device such as a light-emitting diode and, particularly, capable of imparting excellent discoloration resistance to a silver plated surface.SOLUTION: A surface treatment agent for silver or silver alloys comprises liquid A comprising a cationic electrolyte polymer, and liquid B comprising a laminar silicate compound.
摘要翻译：要解决的问题：为了提供对于各种银或银合金具有优异的变色（防腐蚀）性能的表面处理剂，例如用于电子部件的银或银合金和诸如发光的照明装置二极管，特别是能够赋予镀银表面优异的耐变色性。溶液：用于银或银合金的表面处理剂包括含有阳离子电解质聚合物的液体A和包含层状硅酸盐化合物的液体B.

7. 发明专利

JP2013254825A OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, BASE SUBSTANCE TO BE USED FOR MANUFACTURING THE SAME AND REFLECTOR MOLDING 审中-公开
公开(公告)号：JP2013254825A
公开(公告)日：2013-12-19
申请号：JP2012129046
申请日：2012-06-06
申请人： HITACHI CHEMICAL CO LTD
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： H01L33/56 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing sulphurization of Ag plating layer, a method for manufacturing the same, a base substance to be used for manufacturing the same, and a reflector molding.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 in which an Ag plating layer 14 is formed thereon; a blue LED 30 bonded to the Ag plating layer 14; a reflector 20 arranged on the substrate 10 in such a position that the reflector 20 surrounds the blue LED 30; and a transparent sealing resin 40 filled in the reflector 20 to seal the blue LED 30; and a clay film 50 covering the Ag plating layer 10. Because the Ag plating layer 14 is covered by the clay film 50, sulphurization of the Ag plating layer 14 can be suppressed. As a result, an illuminance reduction in the optical semiconductor device 1A due to blackening of the Ag plating layer, is substantially suppressed.

8. 发明专利

JP2013254824A OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, BASE SUBSTANCE TO BE USED FOR MANUFACTURING THE SAME AND REFLECTOR MOLDING 有权
公开(公告)号：JP2013254824A
公开(公告)日：2013-12-19
申请号：JP2012129043
申请日：2012-06-06
申请人： HITACHI CHEMICAL CO LTD
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： H01L33/60 , G02B5/08
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing sulphurization of Ag plating layer, a method for manufacturing the same, a base substance to be used for manufacturing the same, and a reflector molding.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 in which an Ag plating layer 14 is formed thereon; a blue LED 30 bonded to the Ag plating layer 14; a reflector 20 arranged on the substrate 10 in such a position that the reflector 20 surrounds the blue LED 30; and a transparent sealing resin 40 filled in the reflector 20 to seal the blue LED 30; and a clay film 50 covering the Ag plating layer 10. A film thickness of the clay film is equal to or more than 0.01 μm and is equal to or less than 500 μm. In the optical semiconductor device 1A, because the Ag plating layer 14 is covered by the clay film 50 and the film thickness d of the clay film 50 is equal to or more than 0.01 μm and is equal to or less than 500 μm, sulphurization of the Ag plating layer 14 can practically sufficiently be suppressed. As a result, an illuminance reduction in the optical semiconductor device 1A due to blackening of the Ag plating layer 14, is suppressed.

9. 发明专利

JP2013254822A METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2013254822A
公开(公告)日：2013-12-19
申请号：JP2012129029
申请日：2012-06-06
申请人： HITACHI CHEMICAL CO LTD
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： H01L33/62 , H01L33/52 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device capable of forming a clay film with which a silver plating layer can be coated appropriately.SOLUTION: When manufacturing an optical semiconductor device 1 in which a blue LED 30 is bonded to a silver plating layer 16 formed on the surface of a substrate 12, and the silver plating layer 16 is coated with a clay layer 50, the silver plating layer 16 is covered with a clay diluted solution produced by diluting clay with a solvent (step S105) after forming the silver plating layer 16 on the surface of a substrate 12, and the clay diluted solution is dried in a plurality of stages in a plurality of temperature ranges below the boiling point of solvent of the clay diluted solution, thus coating the silver plating layer 16 with the clay layer 50 (step S106).

10. 发明专利

JP2013254823A OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, BASE SUBSTANCE TO BE USED FOR MANUFACTURING THE SAME AND REFLECTOR MOLDING 有权
公开(公告)号：JP2013254823A
公开(公告)日：2013-12-19
申请号：JP2012129037
申请日：2012-06-06
申请人： HITACHI CHEMICAL CO LTD
发明人： TONAI TOMOKO , TAKANE NOBUAKI , YAMAURA ITARU , INADA MAKI , YOKOTA HIROSHI
IPC分类号： H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing sulphurization of Ag plating layer, a method for manufacturing the same, a base substance to be used for manufacturing the same, and a reflector molding.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 in which an Ag plating layer 14 is formed thereon; a blue LED 30 bonded to the Ag plating layer 14; a reflector 20 arranged on the substrate 10 in such a position that the reflector 20 surrounds the blue LED 30; and a transparent sealing resin 40 filled in the reflector 20 to seal the blue LED 30; and a clay film 50 covering the Ag plating layer 10. A film thickness d of the clay film 50 is uniform, and a surface 50a of the clay film 50 conforms to the unevenness of a surface 14a of the Ag plating layer 14. Therefore in the optical semiconductor device 1A, a thick part is formed on the clay film, a generation of crack in the thick part, is significantly suppressed, and sulphurization of the Ag plating layer 14 effectively is suppressed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式