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1. 发明专利

JPS598332A Shifter for sample 失效
标题翻译：更换样品
公开(公告)号：JPS598332A
公开(公告)日：1984-01-17
申请号：JP11680082
申请日：1982-07-07
申请人： Hitachi Ltd , Nippon Telegr & Teleph Corp
发明人： MORIYAMA SHIGEO , HARADA TATSUO , HOKOTANI YOSHIO , IDO SATOSHI , KOMATA FUJIO
IPC分类号： H01J37/20 , H01L21/027 , H01L21/30
CPC分类号： H01J37/20
摘要： PURPOSE:To form a conductive mechanism by a material made of steel by encasing the conductive mechanism in a second vacuum vessel adjacent to the inside of a sample chamber and setting up a differential exhaust seal to a partition wall section into which the conductive mechanism penetrates. CONSTITUTION:The conductive mechanisms 3, 5, 7 are encased in the second vacuum vessel 11 adjacent to the inside of the sample chamber 10. The differential exhaust seal 8 is set up to the penetrating section of the conductive mechanisms 3, 5, 7 in the partition wall between the vessel 11 and the sample chamber 10. Consequently, high vacuum in the sample chamber 10 can be kept easily even when the degree of vacuum in the vessel 11 is lower than that in the sample chamber 10 by approximately one figure. Accordingly, parts made of steel of excellent durability can be used as feed screws, nuts, bearings, etc. constituting the conductive mechanisms.
摘要翻译：目的：通过将导电机构包围在与样品室内部相邻的第二真空容器中并且将导电机构穿透的分隔壁部分设置差动排气密封来形成由钢制成的材料的导电机构。构成：导电机构3,5,7被封装在邻近样品室10内部的第二真空容器11中。差动排气密封件8设置在导电机构3,5,7的穿透部分中容器11和样品室10之间的分隔壁。因此，即使当容器11中的真空度比样品室10中的真空度低约一个数字时，样品室10中的高真空也可以容易地保持。因此，可以使用构成导电机构的进给螺杆，螺母，轴承等优异耐久性的钢制零件。

2. 发明专利

JP2000326212A APPARATUS AND METHOD FOR FLATLY GRINDING SEMICONDUCTOR BOARD 失效
公开(公告)号：JP2000326212A
公开(公告)日：2000-11-28
申请号：JP13372499
申请日：1999-05-14
申请人： HITACHI LTD
发明人： HOUTSUKI MASAHIRO , MORIYAMA SHIGEO , SUZUKI YUKIO , KAJIWARA MAKOTO , OWADA SHUICHI , INAYOSHI KENJI , OTSUKI SHIGEO , TOGAWA KENICHI
IPC分类号： B24B37/005 , B24B37/04 , B24B37/30 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To prevent the excess expansion of a bag and to prevent the failure of a semiconductor board in the grinding of the semiconductor board while pressing the semiconductor board onto a surface of a grinding tool and utilizing the static pressure of the fluid inside of a bag made of an elastic body, by opening and closing the pressure releasing portion formed on the bag in interlocking with the expansion and contraction of the bag. SOLUTION: In the case where a wafer 1 as a semiconductor board is ground, the wafer 1 is pressed to a grind stone 20 by adding the pneumatics to a bag 22 made of an elastic body mounted on a rotatable holder board 21 through a pressure supply channel 23. On this occasion, when the load W to be added to the holder board 21 is reduced, the pressure in the bag 22 is increased, and the bag is expanded and finally bursted. A pressure releasing valve 25 is mounted on a pressure opening portion formed on the bag 22. The pressure releasing valve 25 is formed in such manner that a linear material 28 is pulled when the expansion of the bag 22 is advanced, and a spherical body 29 mounted on a point of the linear material 28 is separated from a valve seat, that is, the pressure in the bag 22 is released by the opening of the valve, and the excess expansion of the bag 22 can be prevented.

3. 发明专利

JPH11219998A METHOD OF TRANSFERRING THIN PLATE WORK TO PROCESSING HOLDER 失效
公开(公告)号：JPH11219998A
公开(公告)日：1999-08-10
申请号：JP2295498
申请日：1998-02-04
申请人： HITACHI LTD
发明人： ISHIDA YOSHIHIRO , MORIYAMA SHIGEO , HARADA KUNIO , SUGAYA MASAKAZU , KUGAYA TAKASHI , OTSUKI SHIGEO , KAWAI AKINARI , NISHIMURA SADAYUKI
IPC分类号： H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To keep the centers of a processing holder and a transfer pad aligned with each other by a method wherein a wafer is restrained from moving sideways in a horizontal direction by a surface tension layer formed between the upside of the transfer pad and the underside of the water, and a main centering operation is carried out resting on the basis of the outer shape of a control ring provided to the underside of a processing holder. SOLUTION: A small amount of pure water 4 is made to flow constantly over the upside of a transfer pad 2 to form a surface tension layer 4a. In this state, when a wafer 1 is placed thereon, the wafer 1 is prevented from moving sideways in a horizontal direction by the physical action of a surface tension. Then, the transfer pad 2 is made to descend according to the timing of a processing holder 3, and a tapered ring 5 and a press pin 23 are made to descend last. When the tapered ring 5 descends, a plate cam 19 descends together through the intermediary of a finger support 17 engaged with the tapered ring 5, a finger 6 moves in a closing direction along the shape of the plate cam 19 and stops when the upper inner wall 6a of the finger 6 is brought into contact with the outer shape of a control ring 7. At this point, the diameter of an inscribed circle formed with the middle inner wall 6b of the finger 6 is so set as to satisfy a formula, diameter of wafer

4. 发明专利

JPH10335276A SURFACE FLATTENING METHOD AND APPARATUS 失效
公开(公告)号：JPH10335276A
公开(公告)日：1998-12-18
申请号：JP13642997
申请日：1997-05-27
申请人： HITACHI LTD
发明人： YASUI KAN , MORIYAMA SHIGEO , KATAGIRI SOUICHI , YAMAGUCHI KATSUHIKO
IPC分类号： H01L21/3205 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To enable all the surface of a wafer to be flattened by very accurate polishing independent of the size of a pattern, by a method wherein a wafer and a grinding stone are arranged confronting each other and pressed against each other with a prescribed pressure, and at least either of the wafer and the grinding stone is moved in the direction of plane to polish the pattern. SOLUTION: A pressure W is applied onto a wafer holder 14 which holds a wafer 1 from above the holder 14 to press the wafer 1 against a polishing tool 16, the wafer holder 14 and a polishing platen 12 are rotated at the same time of polish the wafer 1. At this point, processing liquid 15 is fed from a liquid supply unit 20 onto the polishing tool 16 at a flow rate of 100 to 1000 ml. The pressure W with which the wafer holder 14 is pressed against the polishing tool 16 is 30 to 500 g/cm , and a friction rate (amount of abrasion/ minute) is nearly proportional to the pressure W. It is preferable that the wafer holder 14 and the polishing platen 12 are rotated in the same direction and set nearly equal to each other in rotational speed to carry out uniform polishing, where the rotational speed is set at 20 to 50 rpm.

5. 发明专利

JPH10329031A SEMICONDUCTOR ELEMENT POLISHING METHOD AND MANUFACTURE OF RESIN GRINDING WHEEL USED THEREFOR 失效
公开(公告)号：JPH10329031A
公开(公告)日：1998-12-15
申请号：JP13945497
申请日：1997-05-29
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： OGATA MASAJI , MORIYA AKIHIRO , TANIMOTO MICHIO , MORIYAMA SHIGEO
IPC分类号： B24B37/12 , B24D3/28 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide a working method useful to polish and flatten semiconductor silicon wafers, wiring material formed on the silicon wafer, layer-to-layer insulation film formed at the time of making multilayer interconnection, and the like. SOLUTION: This polishing method is to use a resin grinding wheel having indispensable composition foaming property thermosetting resin 100 volume % provided with foaming property by self-foaming property or a foaming agent of 50 deg.C to 180 deg.C softening temperature and abrasive grains 50 to 200 volume % of an average diameter of 0.1 to 5 μm. The manufacturing method of the resin grinding wheel is to smash independently the foaming thermosetting resin, which is provided with a foaming property by a self-foaming property or a foam agent of 50 deg.C to 180 deg.C softening temperature or together with the abrasive grains of an average of 0.5 to 5 μm, to the foaming thermosetting resin of an average particle diameter of not more than 5 μm and, after dispersedly mixing the two uniformly, the mixture is put into a mold and formed to have 40 to 60 volume m% of porosity under the temperature of 140 deg.C to 220 deg.C and pressure of 0.1 to 20 kg/cm .

6. 发明专利

JPH09232257A POLISHING AND WORKING METHOD 失效
公开(公告)号：JPH09232257A
公开(公告)日：1997-09-05
申请号：JP3457196
申请日：1996-02-22
申请人： HITACHI LTD
发明人： YASUI KAN , MORIYAMA SHIGEO , YAMAGUCHI KATSUHIKO , HONMA YOSHIO
IPC分类号： B24B37/00 , B24B37/12 , H01L21/304 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To obtain a polishing and working method whose working efficiency is increased without generating working damage and in which the operating expenses of a polishing treatment are reduced by a method wherein a whetstone which is composed of abrasive grains and of a substance used to bond and hold the abrasive grains is used and a working operation is performed while a polishing liquid containing abrasive grains whose kind is different from that of the abrasive grains constituting the whetstone is being supplied. SOLUTION: A whetstone 35 is fixed onto a surface plate 12 so as to be rotated. A wafer 1 is installed on the whetstone 35 in such a way that it is pressed to a face, to be worked, on which a recessed and protrusing pattern is formed, and it is held by a wafer holder 14. When an oxide film on the silicon wafer on which a circuit pattern is formed is polished, e.g. a soft porous whetstone in which cerium oxide particles in an average particle size of about 1μm are bonded by an organic resin material such as a phenolic resin or the like and whose Young's modulus is at about 100kg/mm is used as the whetstone 35. At this time, even with the whetstone only, the oxide film on the wafer can be polished so as to be flattened, but colloidal silica is used as s slurry in order to obtain its higher working efficiency.

7. 发明专利

JPH08222548A PLASMA PROCESSOR AND PLASMA PROCESSING OF SUBSTRATE 失效
公开(公告)号：JPH08222548A
公开(公告)日：1996-08-30
申请号：JP2787595
申请日：1995-02-16
申请人： HITACHI LTD
发明人： KAWAMOTO YOSHIFUMI , MORIYAMA SHIGEO , KAWAMURA YOSHIO , YOKOYAMA NATSUKI , KAWAKAMI HIROSHI
IPC分类号： H05H1/46 , B01J19/08 , C23C16/50 , C23C16/511 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H05K3/08
摘要： PURPOSE: To prevent an entire base from reciprocating between atmosphere and vacuum so as to reduce the amount of dusts adhering to the surface of the base, by fixing the base on a flat plate and causing a structure having functions of gas feed and evacuation to face the surface of the base, with the distance between the structure and the base controlled to several mm or less. CONSTITUTION: A structure composed of reactive gas feed means 104, vacuum exhaust means 105 and plasma generating electrodes 106, 107 is set to face the surface of an Si wafer 101 at a distance of 30 to 100μm. A reactive gas is fed from a center portion into a plasma generating area 108, then passes the gap between the structure and the Si wafer 101, and is exhausted from the periphery to the evacuating means 105. Also, the external air passes the gap between the structure and the Si wafer 101 and is exhausted from the periphery to the evacuating means 105. Thus, in this structure, the processing region of the base is evacuated only when the structure faces the base at an appropriate distance.

8. 发明专利

JPH08159231A SCREW FEEDING MECHANISM AND RECTILINEARLY MOVING STAND FOR ULTRA-HIGH-VACUUM HAVING ITS MECHANISM 失效
公开(公告)号：JPH08159231A
公开(公告)日：1996-06-21
申请号：JP30187094
申请日：1994-12-06
申请人： HITACHI LTD
发明人： HARADA KUNIO , MORIYAMA SHIGEO , ITO MASAAKI , KANETOMO MASABUMI , MATSUBARA TOSHIYUKI
IPC分类号： F16H25/20 , F16H25/22 , F16H25/24
摘要： PURPOSE: To provide a screw feeding mechanism by which discharge gas in a vacuum is reduced and rotational resistance is reduced by arranging a radial ball bearing instead of a screw thread of a nut part in the screw feeding mechanism to rectilinearly move the nut part by rotating a screw shaft. CONSTITUTION: In a screw feeding mechanism 3 composed of a screw shaft 7 and a nut part 6, a radial ball bearing 13 by which rolling resistance is reduced and discharge gas is reduced, is arranged between the screw shaft 7 and the nut part 6. An angle part formed by an inside surface 23 of an inner wheel ring 22 of the radial ball bearing 13 and end surfaces 24 and 24' and a screw groove of the screw shaft 7, are brought into rolling contact with each other, and are meshed with each other, and an outer ring 20 of the radial ball bearing 13 is connected to and held by the nut part 6, and the screw shaft 7 is rotated, and the nut part 6 is rectilinearly moved. According to this, rotational resistance can be reduced even in a vacuum where a friction coefficient becomes larger than in the atmosphere, and discharge gas generated from the screw part can be reduced.

9. 发明专利

JPH05234857A 失效
公开(公告)号：JPH05234857A
公开(公告)日：1993-09-10
申请号：JP3599892
申请日：1992-02-24
申请人： HITACHI LTD
发明人： ITO MASAAKI , SEYA HIDEKAZU , MORIYAMA SHIGEO
IPC分类号： G03F7/20 , H01L21/027
摘要： PURPOSE:To effectively utilize radiation light by installing an X-ray aligner and light-pumping reaction apparatus at the radiation light extracting aperture of an electron accumulation ring. CONSTITUTION:A radiation beam 3 is divided within the plane perpendicular to an electron orbit plane, an X-ray having a small light emitting angle for the electron orbit plane is guided to an X-ray aligner 8 and a vacuum ultravioret light having a larger light emitting angle for electron orbit plane is then guided to an optically pumped reaction apparatus 7. Thereby, cost in the semiconductor manufacturing process is reduced and throughput can be improved.

10. 发明专利

JPH05181258A ORIGINAL PLATE FOR PHOTOMASK 失效
公开(公告)号：JPH05181258A
公开(公告)日：1993-07-23
申请号：JP16061492
申请日：1992-06-19
申请人： HITACHI LTD
发明人： TERASAWA TSUNEO , KUROSAKI TOSHISHIGE , KAWAMURA YOSHIO , MORIYAMA SHIGEO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To provide the original plate for a photomask which can simultaneously form both of light shielding patterns and patterns of a layer for changing the phase of illuminating light with good accuracy by providing a phase shift layer for inverting the phase of exit light between a transparent substrate and a light shielding film. CONSTITUTION:This photomask is formed by successively laminating the phase shift layer 2 consisting of a vapor deposited SiO2 film and the light shielding film 3 consisting of Cr on the glass substrate 1. Five pieces of line patterns consisting of apertures 4-1, 4-2, 4-3, 4-4, 4-5 are formed on the light shielding film 3. The thickness of the phase shift layer 2, designated as t, the refractive index thereof, as n, and the wavelength of the illuminating light, as lambda, are specified to t=lambda/{2(n-1)}; in addition, the phase shift layers at the two points of the apertures 4-2, 4-4 are removed. Codes are inverted in the apertures where the amplitude distributions of the transparent light of the photomask are adjacent by such constitution. The effect equal to the effect of the conventional photomask changing the phase of the illuminating light is this rendered.

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